Valence Band Discontinuity at the AlN/Si Interface

H. Ishikawa, B. Zhang, T. Egawa, T.Jimbo T.Jimbo

Research output: Contribution to journalArticle

21 Citations (Scopus)
Original languageEnglish
Pages (from-to)6413-6414
JournalJpn. J. Appl. Phys.
Volume42
Publication statusPublished - 2003 Oct 1

Cite this

Ishikawa, H., Zhang, B., Egawa, T., & T.Jimbo, T. J. (2003). Valence Band Discontinuity at the AlN/Si Interface. Jpn. J. Appl. Phys., 42, 6413-6414.

Valence Band Discontinuity at the AlN/Si Interface. / Ishikawa, H.; Zhang, B.; Egawa, T.; T.Jimbo, T.Jimbo.

In: Jpn. J. Appl. Phys., Vol. 42, 01.10.2003, p. 6413-6414.

Research output: Contribution to journalArticle

Ishikawa, H, Zhang, B, Egawa, T & T.Jimbo, TJ 2003, 'Valence Band Discontinuity at the AlN/Si Interface', Jpn. J. Appl. Phys., vol. 42, pp. 6413-6414.
Ishikawa H, Zhang B, Egawa T, T.Jimbo TJ. Valence Band Discontinuity at the AlN/Si Interface. Jpn. J. Appl. Phys. 2003 Oct 1;42:6413-6414.
Ishikawa, H. ; Zhang, B. ; Egawa, T. ; T.Jimbo, T.Jimbo. / Valence Band Discontinuity at the AlN/Si Interface. In: Jpn. J. Appl. Phys. 2003 ; Vol. 42. pp. 6413-6414.
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