| Original language | English |
|---|---|
| Pages (from-to) | 6413-6414 |
| Journal | Jpn. J. Appl. Phys. |
| Volume | 42 |
| Publication status | Published - 2003 Oct 1 |
Cite this
Ishikawa, H., Zhang, B., Egawa, T., & T.Jimbo, T. J. (2003). Valence Band Discontinuity at the AlN/Si Interface. Jpn. J. Appl. Phys., 42, 6413-6414.