Valence Band Discontinuity at the AlN/Si Interface

H. Ishikawa, B. Zhang, T. Egawa, T.Jimbo T.Jimbo

Research output: Contribution to journal › Article

21 Citations (Scopus)
Original languageEnglish
Pages (from-to)6413-6414
JournalJpn. J. Appl. Phys.
Volume42
Publication statusPublished - 2003 Oct 1

Cite this

Ishikawa, H., Zhang, B., Egawa, T., & T.Jimbo, T. J. (2003). Valence Band Discontinuity at the AlN/Si Interface. Jpn. J. Appl. Phys., 42, 6413-6414.

Valence Band Discontinuity at the AlN/Si Interface. / Ishikawa, H.; Zhang, B.; Egawa, T.; T.Jimbo, T.Jimbo.

In: Jpn. J. Appl. Phys., Vol. 42, 01.10.2003, p. 6413-6414.

Research output: Contribution to journal › Article

Ishikawa, H, Zhang, B, Egawa, T & T.Jimbo, TJ 2003, 'Valence Band Discontinuity at the AlN/Si Interface', Jpn. J. Appl. Phys., vol. 42, pp. 6413-6414.
Ishikawa H, Zhang B, Egawa T, T.Jimbo TJ. Valence Band Discontinuity at the AlN/Si Interface. Jpn. J. Appl. Phys. 2003 Oct 1;42:6413-6414.
Ishikawa, H. ; Zhang, B. ; Egawa, T. ; T.Jimbo, T.Jimbo. / Valence Band Discontinuity at the AlN/Si Interface. In: Jpn. J. Appl. Phys. 2003 ; Vol. 42. pp. 6413-6414.
@article{eff4b62e9e934f269b71998855c0608e,
title = "Valence Band Discontinuity at the AlN/Si Interface",
author = "H. Ishikawa and B. Zhang and T. Egawa and T.Jimbo T.Jimbo",
year = "2003",
month = "10",
day = "1",
language = "English",
volume = "42",
pages = "6413--6414",
journal = "Jpn. J. Appl. Phys.",

}

TY - JOUR

T1 - Valence Band Discontinuity at the AlN/Si Interface

AU - Ishikawa, H.

AU - Zhang, B.

AU - Egawa, T.

AU - T.Jimbo, T.Jimbo

PY - 2003/10/1

Y1 - 2003/10/1

M3 - Article

VL - 42

SP - 6413

EP - 6414

JO - Jpn. J. Appl. Phys.

JF - Jpn. J. Appl. Phys.

ER -