Valence Band Discontinuity at the AlN/Si Interface

H. Ishikawa, B. Zhang, T. Egawa, T.Jimbo T.Jimbo

Research output: Contribution to journalArticle

21 Citations (Scopus)
Original languageEnglish
Pages (from-to)6413-6414
JournalJpn. J. Appl. Phys.
Volume42
Publication statusPublished - 2003 Oct 1

Cite this

Ishikawa, H., Zhang, B., Egawa, T., & T.Jimbo, T. J. (2003). Valence Band Discontinuity at the AlN/Si Interface. Jpn. J. Appl. Phys., 42, 6413-6414.