Very wide-tuning range 5-GHz-band Si bipolar VCO using three-dimensional MMIC technology

Kenji Kamogawa, Kenjiro Nishikawa, Chikara Yamaguchi, Makoto Hirano, Ichihiko Toyoda, Tsuneo Tokumitsu

    Research output: Contribution to journalConference article

    3 Citations (Scopus)

    Abstract

    The first completely integrated, wide-tuning range 5-GHz-band 0.5-μm Si bipolar transistor voltage-controlled oscillator (VCO), based on three-dimensional MMIC technology, is presented. A 33% frequency tuning range from 4.02 to 5.35 GHz is obtained at the collector voltage of 3 V because the base-emitter resistance of the active transistor works like a varistor with a large ratio. Furthermore, the oscillation frequency is remarkably linear against the controlled base bias. The achieved phase noise is -108 dBc/H at 1 MHz offset from carrier.

    Original languageEnglish
    Pages (from-to)1221-1224
    Number of pages4
    JournalIEEE MTT-S International Microwave Symposium Digest
    Volume3
    Publication statusPublished - 1997 Jan 1
    EventProceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Denver, CO, USA
    Duration: 1997 Jun 81997 Jun 13

    ASJC Scopus subject areas

    • Radiation
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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  • Cite this

    Kamogawa, K., Nishikawa, K., Yamaguchi, C., Hirano, M., Toyoda, I., & Tokumitsu, T. (1997). Very wide-tuning range 5-GHz-band Si bipolar VCO using three-dimensional MMIC technology. IEEE MTT-S International Microwave Symposium Digest, 3, 1221-1224.