Very wide-tuning range 5-GHz-band Si bipolar VCO using three-dimensional MMIC technology

Kenji Kamogawa; Kenjiro Nishikawa; Chikara Yamaguchi; Makoto Hirano; Ichihiko Toyoda; Tsuneo Tokumitsu

Very wide-tuning range 5-GHz-band Si bipolar VCO using three-dimensional MMIC technology

Kenji Kamogawa, Kenjiro Nishikawa, Chikara Yamaguchi, Makoto Hirano, Ichihiko Toyoda, Tsuneo Tokumitsu

Research output: Contribution to journal › Conference article › peer-review

Abstract

The first completely integrated, wide-tuning range 5-GHz-band 0.5-μm Si bipolar transistor voltage-controlled oscillator (VCO), based on three-dimensional MMIC technology, is presented. A 33% frequency tuning range from 4.02 to 5.35 GHz is obtained at the collector voltage of 3 V because the base-emitter resistance of the active transistor works like a varistor with a large ratio. Furthermore, the oscillation frequency is remarkably linear against the controlled base bias. The achieved phase noise is -108 dBc/H at 1 MHz offset from carrier.

Original language	English
Pages (from-to)	1221-1224
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	3
Publication status	Published - 1997 Jan 1
Event	Proceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Denver, CO, USA Duration: 1997 Jun 8 → 1997 Jun 13

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

@article{d53b4a9b1b12498f956cf86192338611,

title = "Very wide-tuning range 5-GHz-band Si bipolar VCO using three-dimensional MMIC technology",

abstract = "The first completely integrated, wide-tuning range 5-GHz-band 0.5-μm Si bipolar transistor voltage-controlled oscillator (VCO), based on three-dimensional MMIC technology, is presented. A 33% frequency tuning range from 4.02 to 5.35 GHz is obtained at the collector voltage of 3 V because the base-emitter resistance of the active transistor works like a varistor with a large ratio. Furthermore, the oscillation frequency is remarkably linear against the controlled base bias. The achieved phase noise is -108 dBc/H at 1 MHz offset from carrier.",

author = "Kenji Kamogawa and Kenjiro Nishikawa and Chikara Yamaguchi and Makoto Hirano and Ichihiko Toyoda and Tsuneo Tokumitsu",

year = "1997",

month = jan,

day = "1",

language = "English",

volume = "3",

pages = "1221--1224",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) ; Conference date: 08-06-1997 Through 13-06-1997",

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TY - JOUR

T1 - Very wide-tuning range 5-GHz-band Si bipolar VCO using three-dimensional MMIC technology

AU - Kamogawa, Kenji

AU - Nishikawa, Kenjiro

AU - Yamaguchi, Chikara

AU - Hirano, Makoto

AU - Toyoda, Ichihiko

AU - Tokumitsu, Tsuneo

PY - 1997/1/1

Y1 - 1997/1/1

N2 - The first completely integrated, wide-tuning range 5-GHz-band 0.5-μm Si bipolar transistor voltage-controlled oscillator (VCO), based on three-dimensional MMIC technology, is presented. A 33% frequency tuning range from 4.02 to 5.35 GHz is obtained at the collector voltage of 3 V because the base-emitter resistance of the active transistor works like a varistor with a large ratio. Furthermore, the oscillation frequency is remarkably linear against the controlled base bias. The achieved phase noise is -108 dBc/H at 1 MHz offset from carrier.

AB - The first completely integrated, wide-tuning range 5-GHz-band 0.5-μm Si bipolar transistor voltage-controlled oscillator (VCO), based on three-dimensional MMIC technology, is presented. A 33% frequency tuning range from 4.02 to 5.35 GHz is obtained at the collector voltage of 3 V because the base-emitter resistance of the active transistor works like a varistor with a large ratio. Furthermore, the oscillation frequency is remarkably linear against the controlled base bias. The achieved phase noise is -108 dBc/H at 1 MHz offset from carrier.

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M3 - Conference article

AN - SCOPUS:0030655062

SN - 0149-645X

VL - 3

SP - 1221

EP - 1224

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - Proceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3)

Y2 - 8 June 1997 through 13 June 1997

ER -

Very wide-tuning range 5-GHz-band Si bipolar VCO using three-dimensional MMIC technology

Abstract

ASJC Scopus subject areas

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