Very wide-tuning range 5-GHz-band Si bipolar VCO using three-dimensional MMIC technology

Kenji Kamogawa, Kenjiro Nishikawa, Chikara Yamaguchi, Makoto Hirano, Ichihiko Toyoda, Tsuneo Tokumitsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The first completely integrated, wide-tuning range 5-GHz-band 0.5-μm Si bipolar transistor voltage-controlled oscillator (VCO), based on three-dimensional MMIC technology, is presented. A 33% frequency tuning range from 4.02 to 5.35 GHz is obtained at the collector voltage of 3 V because the base-emitter resistance of the active transistor works like a varistor with a large ratio. Furthermore, the oscillation frequency is remarkably linear against the controlled base bias. The achieved phase noise is -108 dBc/H at 1 MHz offset from carrier.

Original languageEnglish
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
EditorsG.A. Koepf
PublisherIEEE
Pages1221-1224
Number of pages4
Volume3
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Denver, CO, USA
Duration: 1997 Jun 81997 Jun 13

Other

OtherProceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3)
CityDenver, CO, USA
Period97/6/897/6/13

Fingerprint

voltage controlled oscillators
Variable frequency oscillators
Monolithic microwave integrated circuits
Tuning
tuning
varistors
Varistors
Bipolar transistors
Phase noise
bipolar transistors
accumulators
Transistors
emitters
transistors
oscillations
Electric potential
electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Kamogawa, K., Nishikawa, K., Yamaguchi, C., Hirano, M., Toyoda, I., & Tokumitsu, T. (1997). Very wide-tuning range 5-GHz-band Si bipolar VCO using three-dimensional MMIC technology. In G. A. Koepf (Ed.), IEEE MTT-S International Microwave Symposium Digest (Vol. 3, pp. 1221-1224). IEEE.

Very wide-tuning range 5-GHz-band Si bipolar VCO using three-dimensional MMIC technology. / Kamogawa, Kenji; Nishikawa, Kenjiro; Yamaguchi, Chikara; Hirano, Makoto; Toyoda, Ichihiko; Tokumitsu, Tsuneo.

IEEE MTT-S International Microwave Symposium Digest. ed. / G.A. Koepf. Vol. 3 IEEE, 1997. p. 1221-1224.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kamogawa, K, Nishikawa, K, Yamaguchi, C, Hirano, M, Toyoda, I & Tokumitsu, T 1997, Very wide-tuning range 5-GHz-band Si bipolar VCO using three-dimensional MMIC technology. in GA Koepf (ed.), IEEE MTT-S International Microwave Symposium Digest. vol. 3, IEEE, pp. 1221-1224, Proceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3), Denver, CO, USA, 97/6/8.
Kamogawa K, Nishikawa K, Yamaguchi C, Hirano M, Toyoda I, Tokumitsu T. Very wide-tuning range 5-GHz-band Si bipolar VCO using three-dimensional MMIC technology. In Koepf GA, editor, IEEE MTT-S International Microwave Symposium Digest. Vol. 3. IEEE. 1997. p. 1221-1224
Kamogawa, Kenji ; Nishikawa, Kenjiro ; Yamaguchi, Chikara ; Hirano, Makoto ; Toyoda, Ichihiko ; Tokumitsu, Tsuneo. / Very wide-tuning range 5-GHz-band Si bipolar VCO using three-dimensional MMIC technology. IEEE MTT-S International Microwave Symposium Digest. editor / G.A. Koepf. Vol. 3 IEEE, 1997. pp. 1221-1224
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