Visible-blind metal-semiconductor-metal photodetectors based on undoped AlGaN/GaN high electron mobility transistor structure

Hao Jiang; Takashi Egawa; Hiroyasu Ishikawa; Chunlin Shao; Takashi Jimbo

doi:10.1143/jjap.43.l683

Visible-blind metal-semiconductor-metal photodetectors based on undoped AlGaN/GaN high electron mobility transistor structure

Hao Jiang, Takashi Egawa, Hiroyasu Ishikawa, Chunlin Shao, Takashi Jimbo

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Visible-blind Schottky metal-semiconductor-metal photodetectors (MSM-PDs) fabricated on an undoped AlGaN/GaN high electron mobility transistor (HEMT) structure were reported. Dark-current density as low as 1.8 × 10 ^-8 A/cm²2 at 10 V bias was obtained. A peak responsivity of 114 mA/W at 350 nm was measured under top illumination with a constant irradiation power density of 10μW/cm², which corresponds to an external quantum efficiency of 40%. The MSM-PDs based on this structure are of advantage for monolithic integration with HEMT circuits in one epitaxial step.

Original language	English
Pages (from-to)	L683-L685
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	43
Issue number	5 B
DOIs	https://doi.org/10.1143/jjap.43.l683
Publication status	Published - 2004 May 15
Externally published	Yes

Keywords

AlGaN/GaN
HEMT
Heterostructure
Photodetector

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Visible-blind metal-semiconductor-metal photodetectors based on undoped AlGaN/GaN high electron mobility transistor structure",

abstract = "Visible-blind Schottky metal-semiconductor-metal photodetectors (MSM-PDs) fabricated on an undoped AlGaN/GaN high electron mobility transistor (HEMT) structure were reported. Dark-current density as low as 1.8 × 10 -8 A/cm22 at 10 V bias was obtained. A peak responsivity of 114 mA/W at 350 nm was measured under top illumination with a constant irradiation power density of 10μW/cm2, which corresponds to an external quantum efficiency of 40%. The MSM-PDs based on this structure are of advantage for monolithic integration with HEMT circuits in one epitaxial step.",

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author = "Hao Jiang and Takashi Egawa and Hiroyasu Ishikawa and Chunlin Shao and Takashi Jimbo",

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AU - Jiang, Hao

AU - Egawa, Takashi

AU - Ishikawa, Hiroyasu

AU - Shao, Chunlin

AU - Jimbo, Takashi

PY - 2004/5/15

Y1 - 2004/5/15

N2 - Visible-blind Schottky metal-semiconductor-metal photodetectors (MSM-PDs) fabricated on an undoped AlGaN/GaN high electron mobility transistor (HEMT) structure were reported. Dark-current density as low as 1.8 × 10 -8 A/cm22 at 10 V bias was obtained. A peak responsivity of 114 mA/W at 350 nm was measured under top illumination with a constant irradiation power density of 10μW/cm2, which corresponds to an external quantum efficiency of 40%. The MSM-PDs based on this structure are of advantage for monolithic integration with HEMT circuits in one epitaxial step.

AB - Visible-blind Schottky metal-semiconductor-metal photodetectors (MSM-PDs) fabricated on an undoped AlGaN/GaN high electron mobility transistor (HEMT) structure were reported. Dark-current density as low as 1.8 × 10 -8 A/cm22 at 10 V bias was obtained. A peak responsivity of 114 mA/W at 350 nm was measured under top illumination with a constant irradiation power density of 10μW/cm2, which corresponds to an external quantum efficiency of 40%. The MSM-PDs based on this structure are of advantage for monolithic integration with HEMT circuits in one epitaxial step.

KW - AlGaN/GaN

KW - HEMT

KW - Heterostructure

KW - Photodetector

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Visible-blind metal-semiconductor-metal photodetectors based on undoped AlGaN/GaN high electron mobility transistor structure

Abstract

Keywords

ASJC Scopus subject areas

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