Visible-blind metal-semiconductor-metal photodetectors based on undoped AlGaN/GaN high electron mobility transistor structure

Hao Jiang, Takashi Egawa, Hiroyasu Ishikawa, Chunlin Shao, Takashi Jimbo

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Visible-blind Schottky metal-semiconductor-metal photodetectors (MSM-PDs) fabricated on an undoped AlGaN/GaN high electron mobility transistor (HEMT) structure were reported. Dark-current density as low as 1.8 × 10 -8 A/cm22 at 10 V bias was obtained. A peak responsivity of 114 mA/W at 350 nm was measured under top illumination with a constant irradiation power density of 10μW/cm2, which corresponds to an external quantum efficiency of 40%. The MSM-PDs based on this structure are of advantage for monolithic integration with HEMT circuits in one epitaxial step.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number5 B
Publication statusPublished - 2004 May 15
Externally publishedYes

Fingerprint

High electron mobility transistors
Photodetectors
high electron mobility transistors
photometers
Semiconductor materials
Metals
metals
transistor circuits
Dark currents
dark current
Quantum efficiency
radiant flux density
quantum efficiency
Current density
Lighting
illumination
Irradiation
current density
irradiation
Networks (circuits)

Keywords

  • AlGaN/GaN
  • HEMT
  • Heterostructure
  • Photodetector

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Visible-blind metal-semiconductor-metal photodetectors based on undoped AlGaN/GaN high electron mobility transistor structure. / Jiang, Hao; Egawa, Takashi; Ishikawa, Hiroyasu; Shao, Chunlin; Jimbo, Takashi.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 43, No. 5 B, 15.05.2004.

Research output: Contribution to journalArticle

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