Visible-blind metal-semiconductor-metal photodetectors based on undoped AlGaN/GaN high electron mobility transistor structure

Hao Jiang, Takashi Egawa, Hiroyasu Ishikawa, Chunlin Shao, Takashi Jimbo

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Visible-blind Schottky metal-semiconductor-metal photodetectors (MSM-PDs) fabricated on an undoped AlGaN/GaN high electron mobility transistor (HEMT) structure were reported. Dark-current density as low as 1.8 × 10 -8 A/cm22 at 10 V bias was obtained. A peak responsivity of 114 mA/W at 350 nm was measured under top illumination with a constant irradiation power density of 10μW/cm2, which corresponds to an external quantum efficiency of 40%. The MSM-PDs based on this structure are of advantage for monolithic integration with HEMT circuits in one epitaxial step.

Original languageEnglish
Pages (from-to)L683-L685
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number5 B
Publication statusPublished - 2004 May 15

Keywords

  • AlGaN/GaN
  • HEMT
  • Heterostructure
  • Photodetector

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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