Visible-blind metal-semiconductor-metal photodetectors based on undoped AlGaN/GaN high electron mobility transistor structure

Engineering & Materials Science

• Photodetectors 100%
• High electron mobility transistors 89%
• Semiconductor materials 68%
• Metals 49%
• Quantum efficiency 30%
• Dark currents 29%
• Irradiation 19%
• Current density 18%
• Lighting 15%
• Networks (circuits) 10%

Physics & Astronomy

• high electron mobility transistors 79%
• photometers 68%
• metals 39%
• transistor circuits 29%
• dark current 19%
• radiant flux density 17%
• quantum efficiency 17%
• illumination 14%
• current density 13%
• irradiation 12%