Visible photoluminescence from Si+-implanted SiO2 films after high-temperature rapid thermal annealing

Saulius Juodkazis, Petr G. Eliseev, Mitsuru Watanabe, Hong Bo Sun, Shigeki Matsuo, Tomoya Sugahara, Shiro Sakai, Hiroaki Misawa

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Two photoluminescence (PL) bands were observed in 4×1015 cm-2-fluence-Si+-implanted 100-nm-thick SiO2 films after rapid thermal annealing (RTA) at 950-1150 °C with 2-4 eV excitation. The PL band at 2.2 eV was excited by 3.8 eV photons in the films after RTA in dry nitrogen while the other band at 1.9 eV was excited by 2.5 eV photons in the films after isochronal RTA in wet nitrogen. Moreover, the origin for the 2.2 eV energy band was found to be the same as that of the E′δ center. The origin of the 1.9 eV band could be ascribed to the non-bridging oxygen hole centers (NBOHC). The latter was more stable even at high temperatures and showed a stronger PL intensity than the former.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume39
Issue number2 A
Publication statusPublished - 2000 Feb
Externally publishedYes

Fingerprint

Rapid thermal annealing
Photoluminescence
photoluminescence
annealing
Photons
Nitrogen
Thick films
nitrogen
Band structure
Temperature
photons
thick films
energy bands
fluence
Oxygen
oxygen
excitation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Visible photoluminescence from Si+-implanted SiO2 films after high-temperature rapid thermal annealing. / Juodkazis, Saulius; Eliseev, Petr G.; Watanabe, Mitsuru; Sun, Hong Bo; Matsuo, Shigeki; Sugahara, Tomoya; Sakai, Shiro; Misawa, Hiroaki.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 39, No. 2 A, 02.2000.

Research output: Contribution to journalArticle

Juodkazis, S, Eliseev, PG, Watanabe, M, Sun, HB, Matsuo, S, Sugahara, T, Sakai, S & Misawa, H 2000, 'Visible photoluminescence from Si+-implanted SiO2 films after high-temperature rapid thermal annealing', Japanese Journal of Applied Physics, Part 2: Letters, vol. 39, no. 2 A.
Juodkazis, Saulius ; Eliseev, Petr G. ; Watanabe, Mitsuru ; Sun, Hong Bo ; Matsuo, Shigeki ; Sugahara, Tomoya ; Sakai, Shiro ; Misawa, Hiroaki. / Visible photoluminescence from Si+-implanted SiO2 films after high-temperature rapid thermal annealing. In: Japanese Journal of Applied Physics, Part 2: Letters. 2000 ; Vol. 39, No. 2 A.
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AU - Matsuo, Shigeki

AU - Sugahara, Tomoya

AU - Sakai, Shiro

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