Abstract
GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding with magnetooptic garnet. The highly hydrophilic surface of GaInAsP was obtained by O 2 plasma activation process with a subsequent dip in water. The wafer exposed to O 2 plasma with a subsequent dip in water showed high hydrophilicity. Wafer direct bonding was achieved between O 2 plasma activated GaInAsP and garnet crystals.
| Original language | English |
|---|---|
| Title of host publication | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Publisher | IEEE |
| Pages | 503-504 |
| Number of pages | 2 |
| Volume | 2 |
| Publication status | Published - 1999 |
| Externally published | Yes |
| Event | Proceedings of the 1999 12th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS'99) - San Francisco, CA, USA Duration: 1999 Nov 8 → 1999 Nov 11 |
Other
| Other | Proceedings of the 1999 12th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS'99) |
|---|---|
| City | San Francisco, CA, USA |
| Period | 99/11/8 → 99/11/11 |
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ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering
- Industrial and Manufacturing Engineering
Cite this
Wafer surface treatment for bonding GaInAsP and magnetooptic garnet. / Mizumoto, Tetsuya; Yokoi, Hideki; Shimizu, Masafumi; Waniishi, Takashi; Futakuchi, Naoki; Kaida, Noriaki; Nakano, Yoshiaki.
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 2 IEEE, 1999. p. 503-504.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Wafer surface treatment for bonding GaInAsP and magnetooptic garnet
AU - Mizumoto, Tetsuya
AU - Yokoi, Hideki
AU - Shimizu, Masafumi
AU - Waniishi, Takashi
AU - Futakuchi, Naoki
AU - Kaida, Noriaki
AU - Nakano, Yoshiaki
PY - 1999
Y1 - 1999
N2 - GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding with magnetooptic garnet. The highly hydrophilic surface of GaInAsP was obtained by O 2 plasma activation process with a subsequent dip in water. The wafer exposed to O 2 plasma with a subsequent dip in water showed high hydrophilicity. Wafer direct bonding was achieved between O 2 plasma activated GaInAsP and garnet crystals.
AB - GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding with magnetooptic garnet. The highly hydrophilic surface of GaInAsP was obtained by O 2 plasma activation process with a subsequent dip in water. The wafer exposed to O 2 plasma with a subsequent dip in water showed high hydrophilicity. Wafer direct bonding was achieved between O 2 plasma activated GaInAsP and garnet crystals.
UR - http://www.scopus.com/inward/record.url?scp=0033312078&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033312078&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0033312078
VL - 2
SP - 503
EP - 504
BT - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
PB - IEEE
ER -