Wafer surface treatment for bonding GaInAsP and magnetooptic garnet

Tetsuya Mizumoto, Hideki Yokoi, Masafumi Shimizu, Takashi Waniishi, Naoki Futakuchi, Noriaki Kaida, Yoshiaki Nakano

Research output: Contribution to journalConference article

Abstract

GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding with magnetooptic garnet. The highly hydrophilic surface of GaInAsP was obtained by O2 plasma activation process with a subsequent dip in water. The wafer exposed to O2 plasma with a subsequent dip in water showed high hydrophilicity. Wafer direct bonding was achieved between O2 plasma activated GaInAsP and garnet crystals.

Original languageEnglish
Pages (from-to)503-504
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
Publication statusPublished - 1999 Dec 1
EventProceedings of the 1999 12th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS'99) - San Francisco, CA, USA
Duration: 1999 Nov 81999 Nov 11

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Mizumoto, T., Yokoi, H., Shimizu, M., Waniishi, T., Futakuchi, N., Kaida, N., & Nakano, Y. (1999). Wafer surface treatment for bonding GaInAsP and magnetooptic garnet. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2, 503-504.