Wafer surface treatment for bonding GaInAsP and magnetooptic garnet

Tetsuya Mizumoto, Hideki Yokoi, Masafumi Shimizu, Takashi Waniishi, Naoki Futakuchi, Noriaki Kaida, Yoshiaki Nakano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding with magnetooptic garnet. The highly hydrophilic surface of GaInAsP was obtained by O 2 plasma activation process with a subsequent dip in water. The wafer exposed to O 2 plasma with a subsequent dip in water showed high hydrophilicity. Wafer direct bonding was achieved between O 2 plasma activated GaInAsP and garnet crystals.

Original languageEnglish
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
PublisherIEEE
Pages503-504
Number of pages2
Volume2
Publication statusPublished - 1999
Externally publishedYes
EventProceedings of the 1999 12th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS'99) - San Francisco, CA, USA
Duration: 1999 Nov 81999 Nov 11

Other

OtherProceedings of the 1999 12th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS'99)
CitySan Francisco, CA, USA
Period99/11/899/11/11

Fingerprint

Magnetooptical effects
Garnets
Surface treatment
Hydrophilicity
Plasmas
Angle measurement
Contact angle
Water
Chemical activation
Crystals

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

Cite this

Mizumoto, T., Yokoi, H., Shimizu, M., Waniishi, T., Futakuchi, N., Kaida, N., & Nakano, Y. (1999). Wafer surface treatment for bonding GaInAsP and magnetooptic garnet. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (Vol. 2, pp. 503-504). IEEE.

Wafer surface treatment for bonding GaInAsP and magnetooptic garnet. / Mizumoto, Tetsuya; Yokoi, Hideki; Shimizu, Masafumi; Waniishi, Takashi; Futakuchi, Naoki; Kaida, Noriaki; Nakano, Yoshiaki.

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 2 IEEE, 1999. p. 503-504.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mizumoto, T, Yokoi, H, Shimizu, M, Waniishi, T, Futakuchi, N, Kaida, N & Nakano, Y 1999, Wafer surface treatment for bonding GaInAsP and magnetooptic garnet. in Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. vol. 2, IEEE, pp. 503-504, Proceedings of the 1999 12th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS'99), San Francisco, CA, USA, 99/11/8.
Mizumoto T, Yokoi H, Shimizu M, Waniishi T, Futakuchi N, Kaida N et al. Wafer surface treatment for bonding GaInAsP and magnetooptic garnet. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 2. IEEE. 1999. p. 503-504
Mizumoto, Tetsuya ; Yokoi, Hideki ; Shimizu, Masafumi ; Waniishi, Takashi ; Futakuchi, Naoki ; Kaida, Noriaki ; Nakano, Yoshiaki. / Wafer surface treatment for bonding GaInAsP and magnetooptic garnet. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 2 IEEE, 1999. pp. 503-504
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