Wafer surface treatment for bonding GaInAsP and magnetooptic garnet

Tetsuya Mizumoto; Hideki Yokoi; Masafumi Shimizu; Takashi Waniishi; Naoki Futakuchi; Noriaki Kaida; Yoshiaki Nakano

Wafer surface treatment for bonding GaInAsP and magnetooptic garnet

Tetsuya Mizumoto, Hideki Yokoi, Masafumi Shimizu, Takashi Waniishi, Naoki Futakuchi, Noriaki Kaida, Yoshiaki Nakano

Research output: Contribution to journal › Conference article › peer-review

Abstract

GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding with magnetooptic garnet. The highly hydrophilic surface of GaInAsP was obtained by O₂ plasma activation process with a subsequent dip in water. The wafer exposed to O₂ plasma with a subsequent dip in water showed high hydrophilicity. Wafer direct bonding was achieved between O₂ plasma activated GaInAsP and garnet crystals.

Original language	English
Pages (from-to)	503-504
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2
Publication status	Published - 1999 Dec 1
Externally published	Yes
Event	Proceedings of the 1999 12th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS'99) - San Francisco, CA, USA Duration: 1999 Nov 8 → 1999 Nov 11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Wafer surface treatment for bonding GaInAsP and magnetooptic garnet. / Mizumoto, Tetsuya; Yokoi, Hideki; Shimizu, Masafumi; Waniishi, Takashi; Futakuchi, Naoki; Kaida, Noriaki; Nakano, Yoshiaki.

In: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol. 2, 01.12.1999, p. 503-504.

Research output: Contribution to journal › Conference article › peer-review

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title = "Wafer surface treatment for bonding GaInAsP and magnetooptic garnet",

abstract = "GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding with magnetooptic garnet. The highly hydrophilic surface of GaInAsP was obtained by O2 plasma activation process with a subsequent dip in water. The wafer exposed to O2 plasma with a subsequent dip in water showed high hydrophilicity. Wafer direct bonding was achieved between O2 plasma activated GaInAsP and garnet crystals.",

author = "Tetsuya Mizumoto and Hideki Yokoi and Masafumi Shimizu and Takashi Waniishi and Naoki Futakuchi and Noriaki Kaida and Yoshiaki Nakano",

year = "1999",

month = dec,

day = "1",

language = "English",

volume = "2",

pages = "503--504",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1999 12th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS'99) ; Conference date: 08-11-1999 Through 11-11-1999",

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TY - JOUR

T1 - Wafer surface treatment for bonding GaInAsP and magnetooptic garnet

AU - Mizumoto, Tetsuya

AU - Yokoi, Hideki

AU - Shimizu, Masafumi

AU - Waniishi, Takashi

AU - Futakuchi, Naoki

AU - Kaida, Noriaki

AU - Nakano, Yoshiaki

PY - 1999/12/1

Y1 - 1999/12/1

N2 - GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding with magnetooptic garnet. The highly hydrophilic surface of GaInAsP was obtained by O2 plasma activation process with a subsequent dip in water. The wafer exposed to O2 plasma with a subsequent dip in water showed high hydrophilicity. Wafer direct bonding was achieved between O2 plasma activated GaInAsP and garnet crystals.

AB - GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding with magnetooptic garnet. The highly hydrophilic surface of GaInAsP was obtained by O2 plasma activation process with a subsequent dip in water. The wafer exposed to O2 plasma with a subsequent dip in water showed high hydrophilicity. Wafer direct bonding was achieved between O2 plasma activated GaInAsP and garnet crystals.

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UR - http://www.scopus.com/inward/citedby.url?scp=0033312078&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033312078

VL - 2

SP - 503

EP - 504

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

SN - 1092-8081

T2 - Proceedings of the 1999 12th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS'99)

Y2 - 8 November 1999 through 11 November 1999

ER -

Wafer surface treatment for bonding GaInAsP and magnetooptic garnet

Abstract

ASJC Scopus subject areas

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