Abstract
GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding with magnetooptic garnet. The highly hydrophilic surface of GaInAsP was obtained by O2 plasma activation process with a subsequent dip in water. The wafer exposed to O2 plasma with a subsequent dip in water showed high hydrophilicity. Wafer direct bonding was achieved between O2 plasma activated GaInAsP and garnet crystals.
| Original language | English |
|---|---|
| Pages (from-to) | 503-504 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 2 |
| Publication status | Published - 1999 Dec 1 |
| Event | Proceedings of the 1999 12th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS'99) - San Francisco, CA, USA Duration: 1999 Nov 8 → 1999 Nov 11 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
Mizumoto, T., Yokoi, H., Shimizu, M., Waniishi, T., Futakuchi, N., Kaida, N., & Nakano, Y. (1999). Wafer surface treatment for bonding GaInAsP and magnetooptic garnet. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2, 503-504.