Wafer surface treatment for integrating laser diode and optical isolator by direct bonding

T. Mizumoto, Hideki Yokoi, M. Shimizu, T. Waniishi, N. Futakuchi, N. Kaida, Y. Nakano

Research output: Contribution to conferencePaper

Abstract

GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding. Wafer direct bonding was successfully achieved between O2 plasma activated GaInAsP and garnet crystals.

Original languageEnglish
Pages1662-1664
Number of pages3
DOIs
Publication statusPublished - 1998 Jan 1
Externally publishedYes
Event5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999 - Beijing, China
Duration: 1999 Oct 181999 Oct 22

Other

Other5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999
CountryChina
CityBeijing
Period99/10/1899/10/22

Fingerprint

Surface treatment
Semiconductor lasers
contact
Garnets
Hydrophilicity
Angle measurement
Contact angle
Plasmas
Crystals

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Communication
  • Computer Networks and Communications

Cite this

Mizumoto, T., Yokoi, H., Shimizu, M., Waniishi, T., Futakuchi, N., Kaida, N., & Nakano, Y. (1998). Wafer surface treatment for integrating laser diode and optical isolator by direct bonding. 1662-1664. Paper presented at 5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999, Beijing, China. https://doi.org/10.1109/APCC.1999.820618

Wafer surface treatment for integrating laser diode and optical isolator by direct bonding. / Mizumoto, T.; Yokoi, Hideki; Shimizu, M.; Waniishi, T.; Futakuchi, N.; Kaida, N.; Nakano, Y.

1998. 1662-1664 Paper presented at 5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999, Beijing, China.

Research output: Contribution to conferencePaper

Mizumoto, T, Yokoi, H, Shimizu, M, Waniishi, T, Futakuchi, N, Kaida, N & Nakano, Y 1998, 'Wafer surface treatment for integrating laser diode and optical isolator by direct bonding' Paper presented at 5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999, Beijing, China, 99/10/18 - 99/10/22, pp. 1662-1664. https://doi.org/10.1109/APCC.1999.820618
Mizumoto T, Yokoi H, Shimizu M, Waniishi T, Futakuchi N, Kaida N et al. Wafer surface treatment for integrating laser diode and optical isolator by direct bonding. 1998. Paper presented at 5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999, Beijing, China. https://doi.org/10.1109/APCC.1999.820618
Mizumoto, T. ; Yokoi, Hideki ; Shimizu, M. ; Waniishi, T. ; Futakuchi, N. ; Kaida, N. ; Nakano, Y. / Wafer surface treatment for integrating laser diode and optical isolator by direct bonding. Paper presented at 5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999, Beijing, China.3 p.
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AU - Kaida, N.

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