Wafer surface treatment for integrating laser diode and optical isolator by direct bonding

T. Mizumoto, Hideki Yokoi, M. Shimizu, T. Waniishi, N. Futakuchi, N. Kaida, Y. Nakano

Research output: Contribution to conferencePaperpeer-review

Abstract

GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding. Wafer direct bonding was successfully achieved between O2 plasma activated GaInAsP and garnet crystals.

Original languageEnglish
Pages1662-1664
Number of pages3
DOIs
Publication statusPublished - 1998 Jan 1
Externally publishedYes
Event5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999 - Beijing, China
Duration: 1999 Oct 181999 Oct 22

Other

Other5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999
CountryChina
CityBeijing
Period99/10/1899/10/22

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Communication
  • Computer Networks and Communications

Fingerprint Dive into the research topics of 'Wafer surface treatment for integrating laser diode and optical isolator by direct bonding'. Together they form a unique fingerprint.

Cite this