Abstract
Double-layer TiN/PSZ film coatings were deposited on Si wafers and WC-Co cutting tools from Ti-, Zr-, and Y-alkoxide solutions by thermal plasma chemical vapor deposition (CVD) containing water vapor. The partially stabilized zirconia (PSZ) layer was coated on a TiN film by oxidation of Zr- and Y-alkoxides with H2O supplied by both constant and step-wise methods. Double-layer TiN/PSZ coatings deposited on Si wafers and WC-Co by the two H2O supply methods were approximately 2 μm thick. TEM observation showed that the interface between the TiN and PSZ in the double-layer TiN/PSZ formed by the step-wise H2O supply is more adhesive than under constant H2O supply. Double-layer TiN/PSZ films coated on WC-Co substrates by the step-wise supply exhibited good crater wear resistance, comparable to a commercial double-layer TiN/Al2O3 coating by thermal CVD.
| Original language | English |
|---|---|
| Pages (from-to) | 201-206 |
| Number of pages | 6 |
| Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
| Volume | 172 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2010 Aug 25 |
| Externally published | Yes |
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Keywords
- Chemical vapor deposition
- Partial stabilized zirconia
- Thermal plasma
- Thin films
- Wear resistance
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
- Mechanics of Materials
Cite this
Water vapor-controlled thermal plasma chemical vapor deposition of double-layered TiN/PSZ coatings on Si and WC-Co substrates. / Sakamoto, Takanori; Shimada, Shiro; Kiyono, Hajime; Tsujino, Jiro; Yamazaki, Isao.
In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 172, No. 2, 25.08.2010, p. 201-206.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Water vapor-controlled thermal plasma chemical vapor deposition of double-layered TiN/PSZ coatings on Si and WC-Co substrates
AU - Sakamoto, Takanori
AU - Shimada, Shiro
AU - Kiyono, Hajime
AU - Tsujino, Jiro
AU - Yamazaki, Isao
PY - 2010/8/25
Y1 - 2010/8/25
N2 - Double-layer TiN/PSZ film coatings were deposited on Si wafers and WC-Co cutting tools from Ti-, Zr-, and Y-alkoxide solutions by thermal plasma chemical vapor deposition (CVD) containing water vapor. The partially stabilized zirconia (PSZ) layer was coated on a TiN film by oxidation of Zr- and Y-alkoxides with H2O supplied by both constant and step-wise methods. Double-layer TiN/PSZ coatings deposited on Si wafers and WC-Co by the two H2O supply methods were approximately 2 μm thick. TEM observation showed that the interface between the TiN and PSZ in the double-layer TiN/PSZ formed by the step-wise H2O supply is more adhesive than under constant H2O supply. Double-layer TiN/PSZ films coated on WC-Co substrates by the step-wise supply exhibited good crater wear resistance, comparable to a commercial double-layer TiN/Al2O3 coating by thermal CVD.
AB - Double-layer TiN/PSZ film coatings were deposited on Si wafers and WC-Co cutting tools from Ti-, Zr-, and Y-alkoxide solutions by thermal plasma chemical vapor deposition (CVD) containing water vapor. The partially stabilized zirconia (PSZ) layer was coated on a TiN film by oxidation of Zr- and Y-alkoxides with H2O supplied by both constant and step-wise methods. Double-layer TiN/PSZ coatings deposited on Si wafers and WC-Co by the two H2O supply methods were approximately 2 μm thick. TEM observation showed that the interface between the TiN and PSZ in the double-layer TiN/PSZ formed by the step-wise H2O supply is more adhesive than under constant H2O supply. Double-layer TiN/PSZ films coated on WC-Co substrates by the step-wise supply exhibited good crater wear resistance, comparable to a commercial double-layer TiN/Al2O3 coating by thermal CVD.
KW - Chemical vapor deposition
KW - Partial stabilized zirconia
KW - Thermal plasma
KW - Thin films
KW - Wear resistance
UR - http://www.scopus.com/inward/record.url?scp=77955307537&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77955307537&partnerID=8YFLogxK
U2 - 10.1016/j.mseb.2010.05.010
DO - 10.1016/j.mseb.2010.05.010
M3 - Article
VL - 172
SP - 201
EP - 206
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 2
ER -