What is the essence of Vfb shifts in high-k gate stack?

T.Nabatame T.Nabatame, K.Iwamoto K.Iwamoto, K.Akiyama K.Akiyama, Y.Nunoshige Y.Nunoshige, H.Nunoshige H.Nunoshige, H.Ota H.Ota, A.Toriumi A.Toriumi, T.Ohishi T.Ohishi, Tomoji Oishi

Research output: Contribution to journalArticle

11 Citations (Scopus)
Original languageEnglish
Pages (from-to)543
JournalElectrochemical Society (ECS) Transactions
Volume11
Publication statusPublished - 2007 Oct 7

Cite this

T.Nabatame, T. N., K.Iwamoto, K. I., K.Akiyama, K. A., Y.Nunoshige, Y. N., H.Nunoshige, H. N., H.Ota, H. O., A.Toriumi, A. T., T.Ohishi, T. O., & Oishi, T. (2007). What is the essence of Vfb shifts in high-k gate stack? Electrochemical Society (ECS) Transactions, 11, 543.