What is the essence of vFB shifts in high-k gate stack?

Toshihide Nabatame, Kunihiko Iwamoto, Koji Akiyama, Yu Nunoshige, Hiroyuki Ota, Tomoji Ohishi, Akira Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

Several origins for VFB shift have so far been discussed about metal/high-k/SiO2/Si structures and we focus on three topics such as bottom interface dipole at the high-k/interfacial layer (IL)-SiO2 interface, charge or dipole of bottom reaction layer in IL-SiO2, and dipole due to oxygen vacancy (Vo) in high-k layer by separating each type of these dipoles. We employed bi-layer high-k dielectrics such as HfO 2/Al2O3/SiO2 and Al 2O3/HfO2/SiO2 and demonstrated that the bottom interface dipole plays a critical role in determining the V FB shifts We also show that VFB roll-off behavior in thinner EOT region can be associated with charge or dipole of the bottom reaction layer induced by re-oxidation at the IL-SiO2/Si interface. Finally, we show that Vo in HfO2 and Al2O3 dielectrics generated by HfxRu1-x alloy gates induces dipole at the high-k/IL-SiO2 bottom interface

Original languageEnglish
Title of host publicationECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
Pages543-555
Number of pages13
Edition4
DOIs
Publication statusPublished - 2007 Dec 1
Event5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States
Duration: 2007 Oct 82007 Oct 10

Publication series

NameECS Transactions
Number4
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period07/10/807/10/10

ASJC Scopus subject areas

  • Engineering(all)

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    Nabatame, T., Iwamoto, K., Akiyama, K., Nunoshige, Y., Ota, H., Ohishi, T., & Toriumi, A. (2007). What is the essence of vFB shifts in high-k gate stack? In ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks (4 ed., pp. 543-555). (ECS Transactions; Vol. 11, No. 4). https://doi.org/10.1149/1.2779589