What is the essence of vFB shifts in high-k gate stack?

Toshihide Nabatame, Kunihiko Iwamoto, Koji Akiyama, Yu Nunoshige, Hiroyuki Ota, Tomoji Ohishi, Akira Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

Several origins for VFB shift have so far been discussed about metal/high-k/SiO2/Si structures and we focus on three topics such as bottom interface dipole at the high-k/interfacial layer (IL)-SiO2 interface, charge or dipole of bottom reaction layer in IL-SiO2, and dipole due to oxygen vacancy (Vo) in high-k layer by separating each type of these dipoles. We employed bi-layer high-k dielectrics such as HfO 2/Al2O3/SiO2 and Al 2O3/HfO2/SiO2 and demonstrated that the bottom interface dipole plays a critical role in determining the V FB shifts We also show that VFB roll-off behavior in thinner EOT region can be associated with charge or dipole of the bottom reaction layer induced by re-oxidation at the IL-SiO2/Si interface. Finally, we show that Vo in HfO2 and Al2O3 dielectrics generated by HfxRu1-x alloy gates induces dipole at the high-k/IL-SiO2 bottom interface

Original languageEnglish
Title of host publicationECS Transactions
Pages543-555
Number of pages13
Volume11
Edition4
DOIs
Publication statusPublished - 2007
Event5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC
Duration: 2007 Oct 82007 Oct 10

Other

Other5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
CityWashington, DC
Period07/10/807/10/10

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Oxygen vacancies
Oxidation
Metals
High-k dielectric

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Nabatame, T., Iwamoto, K., Akiyama, K., Nunoshige, Y., Ota, H., Ohishi, T., & Toriumi, A. (2007). What is the essence of vFB shifts in high-k gate stack? In ECS Transactions (4 ed., Vol. 11, pp. 543-555) https://doi.org/10.1149/1.2779589

What is the essence of vFB shifts in high-k gate stack? / Nabatame, Toshihide; Iwamoto, Kunihiko; Akiyama, Koji; Nunoshige, Yu; Ota, Hiroyuki; Ohishi, Tomoji; Toriumi, Akira.

ECS Transactions. Vol. 11 4. ed. 2007. p. 543-555.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nabatame, T, Iwamoto, K, Akiyama, K, Nunoshige, Y, Ota, H, Ohishi, T & Toriumi, A 2007, What is the essence of vFB shifts in high-k gate stack? in ECS Transactions. 4 edn, vol. 11, pp. 543-555, 5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting, Washington, DC, 07/10/8. https://doi.org/10.1149/1.2779589
Nabatame T, Iwamoto K, Akiyama K, Nunoshige Y, Ota H, Ohishi T et al. What is the essence of vFB shifts in high-k gate stack? In ECS Transactions. 4 ed. Vol. 11. 2007. p. 543-555 https://doi.org/10.1149/1.2779589
Nabatame, Toshihide ; Iwamoto, Kunihiko ; Akiyama, Koji ; Nunoshige, Yu ; Ota, Hiroyuki ; Ohishi, Tomoji ; Toriumi, Akira. / What is the essence of vFB shifts in high-k gate stack?. ECS Transactions. Vol. 11 4. ed. 2007. pp. 543-555
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