X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology

Ichihiko Toyoda, Kenjiro Nishikawa, Kenji Kamogawa, Chikara Yamaguchi, Makoto Hirano, Kiyomitsu Onodera, Tsuneo Tokumitsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The three-dimensional (3-D) MMIC technology significantly improves the operating frequency of Si MMICs and offers highly integrated masterslice MMICs. This paper introduces a newly developed X-band Si bipolar transistor transceiver MMIC which integrates 13 function blocks on a 2.3×2.3 mm chip; it offers 20 dB receiver gain and 13 dB transmitter gain. Its design uses a novel function-block-library concept based on the 3-D masterslice MMIC technology.

Original languageEnglish
Title of host publicationIEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages289-292
Number of pages4
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Baltimore, MD, USA
Duration: 1998 Jun 71998 Jun 11

Other

OtherProceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
CityBaltimore, MD, USA
Period98/6/798/6/11

Fingerprint

Bipolar transistors
Monolithic microwave integrated circuits
Transceivers
Transmitters

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Media Technology

Cite this

Toyoda, I., Nishikawa, K., Kamogawa, K., Yamaguchi, C., Hirano, M., Onodera, K., & Tokumitsu, T. (1998). X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology. In IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers (pp. 289-292). Piscataway, NJ, United States: IEEE.

X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology. / Toyoda, Ichihiko; Nishikawa, Kenjiro; Kamogawa, Kenji; Yamaguchi, Chikara; Hirano, Makoto; Onodera, Kiyomitsu; Tokumitsu, Tsuneo.

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers. Piscataway, NJ, United States : IEEE, 1998. p. 289-292.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Toyoda, I, Nishikawa, K, Kamogawa, K, Yamaguchi, C, Hirano, M, Onodera, K & Tokumitsu, T 1998, X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology. in IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers. IEEE, Piscataway, NJ, United States, pp. 289-292, Proceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Baltimore, MD, USA, 98/6/7.
Toyoda I, Nishikawa K, Kamogawa K, Yamaguchi C, Hirano M, Onodera K et al. X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology. In IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers. Piscataway, NJ, United States: IEEE. 1998. p. 289-292
Toyoda, Ichihiko ; Nishikawa, Kenjiro ; Kamogawa, Kenji ; Yamaguchi, Chikara ; Hirano, Makoto ; Onodera, Kiyomitsu ; Tokumitsu, Tsuneo. / X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology. IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers. Piscataway, NJ, United States : IEEE, 1998. pp. 289-292
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