X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology

Ichihiko Toyoda, Kenjiro Nishikawa, Kenji Kamogawa, Chikara Yamaguchi, Makoto Hirano, Kiyomitsu Onodera, Tsuneo Tokumitsu

    Research output: Contribution to conferencePaper

    2 Citations (Scopus)

    Abstract

    The three-dimensional (3-D) MMIC technology significantly improves the operating frequency of Si MMICs and offers highly integrated masterslice MMICs. This paper introduces a newly developed X-band Si bipolar transistor transceiver MMIC which integrates 13 function blocks on a 2.3×2.3 mm chip; it offers 20 dB receiver gain and 13 dB transmitter gain. Its design uses a novel function-block-library concept based on the 3-D masterslice MMIC technology.

    Original languageEnglish
    Pages289-292
    Number of pages4
    Publication statusPublished - 1998 Jan 1
    EventProceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Baltimore, MD, USA
    Duration: 1998 Jun 71998 Jun 11

    Other

    OtherProceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
    CityBaltimore, MD, USA
    Period98/6/798/6/11

    ASJC Scopus subject areas

    • Engineering(all)

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  • Cite this

    Toyoda, I., Nishikawa, K., Kamogawa, K., Yamaguchi, C., Hirano, M., Onodera, K., & Tokumitsu, T. (1998). X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology. 289-292. Paper presented at Proceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Baltimore, MD, USA, .