X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology

Ichihiko Toyoda, Kenjiro Nishikawa, Kenji Kamogawa, Chikara Yamaguchi, Makoto Hirano, Kiyomitsu Onodera, Tsuneo Tokumitsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The three-dimensional (3-D) MMIC technology significantly improves the operating frequency of Si MMICs and offers highly integrated masterslice MMICs. This paper introduces a newly developed X-band Si bipolar transistor transceiver MMIC which integrates 13 function blocks on a 2.3×2.3 mm chip; it offers 20 dB receiver gain and 13 dB transmitter gain. Its design uses a novel function-block-library concept based on the 3-D masterslice MMIC technology.

Original languageEnglish
Title of host publicationIEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages289-292
Number of pages4
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Baltimore, MD, USA
Duration: 1998 Jun 71998 Jun 11

Other

OtherProceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
CityBaltimore, MD, USA
Period98/6/798/6/11

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Media Technology

Cite this

Toyoda, I., Nishikawa, K., Kamogawa, K., Yamaguchi, C., Hirano, M., Onodera, K., & Tokumitsu, T. (1998). X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology. In IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers (pp. 289-292). Piscataway, NJ, United States: IEEE.