Xenon flash lamp annealing of poly-Si thin films

Fujio Terai, Shigeki Matunaka, Akihiko Tauchi, Chikako Ichimura, Takao Nagatomo, Tetsuya Homma

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

We have investigated xenon (Xe) flash lamp annealing for the crystallization of amorphous silicon (a-Si) films for polycrystalline silicon (poly-Si) thin film transistors on glass substrates. The Xe flash lamp emits white light with a wavelength range of 400-800 nm for 40 μs, thereby instantaneously supplying the energy necessary to crystallize a-Si films to poly-Si films. The distance between electrodes in the lamp is 1000 mm, the bore diameter is 10 mm, and the peak voltage is up to 20 kV. The sample structure is a-Si (50 nm) SiOx (100 nm) deposited on a glass substrate by plasma-enhanced chemical vapor deposition using Si H4 gas. An average grain size of 500 nm is obtained without substrate heating during Xe flash lamp annealing when the light energy density is 1.82 J cm2. The grain size is less than 50 nm at 1.55-1.78 J cm2, and a significant grain growth occurs at 1.82 J cm2. The light energy is absorbed by the whole a-Si film, because the Xe flash lamp emits light with a wide wavelength range of 400-800 nm. Therefore, when the light energy exceeds its threshold at which the a-Si film melting point is observed, a-Si films can be partially melted and subsequently crystallized at the top and bottom surfaces, thereby forming large-grain poly-Si.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume153
Issue number7
DOIs
Publication statusPublished - 2006 Jul

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xenon lamps
flash lamps
Xenon
silicon films
Amorphous silicon
Electric lamps
Polysilicon
amorphous silicon
Annealing
Thin films
annealing
silicon
thin films
Substrates
grain size
Glass
Wavelength
glass
supplying
Thin film transistors

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Xenon flash lamp annealing of poly-Si thin films. / Terai, Fujio; Matunaka, Shigeki; Tauchi, Akihiko; Ichimura, Chikako; Nagatomo, Takao; Homma, Tetsuya.

In: Journal of the Electrochemical Society, Vol. 153, No. 7, 07.2006.

Research output: Contribution to journalArticle

Terai, F, Matunaka, S, Tauchi, A, Ichimura, C, Nagatomo, T & Homma, T 2006, 'Xenon flash lamp annealing of poly-Si thin films', Journal of the Electrochemical Society, vol. 153, no. 7. https://doi.org/10.1149/1.2200291
Terai, Fujio ; Matunaka, Shigeki ; Tauchi, Akihiko ; Ichimura, Chikako ; Nagatomo, Takao ; Homma, Tetsuya. / Xenon flash lamp annealing of poly-Si thin films. In: Journal of the Electrochemical Society. 2006 ; Vol. 153, No. 7.
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