xNumerical analysis of buffer-trap effects on gate lag in AlGaN/GaN high electron mobility transistors

Engineering & Materials Science

• Buffer layers 100%
• High electron mobility transistors 81%
• Electron energy levels 54%
• Electron injection 37%
• Surface states 33%

Physics & Astronomy

• high electron mobility transistors 72%
• time lag 59%
• buffers 59%
• traps 52%
• energy levels 11%
• trapping 10%
• dimensional analysis 8%
• injection 5%
• electrons 2%