Zn ion implantation along the c axis for formation of highly resistive GaN layers

Toshiyuki Oishi; Naruhisa Miura; Muneyoshi Suita; Takuma Nanjo; Yuji Abe; Tatsuo Ozeki; Hiroyasu Ishikawa; Takashi Egawa

doi:10.3131/jvsj.47.328

Zn ion implantation along the c axis for formation of highly resistive GaN layers

Toshiyuki Oishi, Naruhisa Miura, Muneyoshi Suita, Takuma Nanjo, Yuji Abe, Tatsuo Ozeki, Hiroyasu Ishikawa, Takashi Egawa

Research output: Contribution to journal › Article › peer-review

Abstract

Zn ion implantation along the c axis was investigated in order to fabricate a highly resistive GaN layer. It was calculated that Zn ions effectively transfer their energy to the crystal atoms due to the heavy mass. This energy transfer was able to create implanted damage, which induced the highly resistive layer. Secondary ion mass spectroscopy (SIMS) profile of Zn atoms revealed that Zn ions penetrated over 1 μm into GaN layer at the ion energy of 350 keV. In the electrical characterization of the Zn implanted layer, it was found that thermal annealing at 500°C removed the Poole-Frenkel current and high sheet resistance of 2 × 10¹³ Ω/sq was obtained. AlGaN/GaN HEMT (high electron mobility transistor) with Zn implanted isolation had good electrical characteristics.

Original language	English
Pages (from-to)	328-333
Number of pages	6
Journal	Shinku/Journal of the Vacuum Society of Japan
Volume	47
Issue number	4
DOIs	https://doi.org/10.3131/jvsj.47.328
Publication status	Published - 2004 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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Zn ion implantation along the c axis for formation of highly resistive GaN layers. / Oishi, Toshiyuki; Miura, Naruhisa; Suita, Muneyoshi; Nanjo, Takuma; Abe, Yuji; Ozeki, Tatsuo; Ishikawa, Hiroyasu; Egawa, Takashi.

In: Shinku/Journal of the Vacuum Society of Japan, Vol. 47, No. 4, 01.01.2004, p. 328-333.

Research output: Contribution to journal › Article › peer-review

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abstract = "Zn ion implantation along the c axis was investigated in order to fabricate a highly resistive GaN layer. It was calculated that Zn ions effectively transfer their energy to the crystal atoms due to the heavy mass. This energy transfer was able to create implanted damage, which induced the highly resistive layer. Secondary ion mass spectroscopy (SIMS) profile of Zn atoms revealed that Zn ions penetrated over 1 μm into GaN layer at the ion energy of 350 keV. In the electrical characterization of the Zn implanted layer, it was found that thermal annealing at 500°C removed the Poole-Frenkel current and high sheet resistance of 2 × 1013 Ω/sq was obtained. AlGaN/GaN HEMT (high electron mobility transistor) with Zn implanted isolation had good electrical characteristics.",

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AU - Oishi, Toshiyuki

AU - Miura, Naruhisa

AU - Suita, Muneyoshi

AU - Nanjo, Takuma

AU - Abe, Yuji

AU - Ozeki, Tatsuo

AU - Ishikawa, Hiroyasu

AU - Egawa, Takashi

PY - 2004/1/1

Y1 - 2004/1/1

N2 - Zn ion implantation along the c axis was investigated in order to fabricate a highly resistive GaN layer. It was calculated that Zn ions effectively transfer their energy to the crystal atoms due to the heavy mass. This energy transfer was able to create implanted damage, which induced the highly resistive layer. Secondary ion mass spectroscopy (SIMS) profile of Zn atoms revealed that Zn ions penetrated over 1 μm into GaN layer at the ion energy of 350 keV. In the electrical characterization of the Zn implanted layer, it was found that thermal annealing at 500°C removed the Poole-Frenkel current and high sheet resistance of 2 × 1013 Ω/sq was obtained. AlGaN/GaN HEMT (high electron mobility transistor) with Zn implanted isolation had good electrical characteristics.

AB - Zn ion implantation along the c axis was investigated in order to fabricate a highly resistive GaN layer. It was calculated that Zn ions effectively transfer their energy to the crystal atoms due to the heavy mass. This energy transfer was able to create implanted damage, which induced the highly resistive layer. Secondary ion mass spectroscopy (SIMS) profile of Zn atoms revealed that Zn ions penetrated over 1 μm into GaN layer at the ion energy of 350 keV. In the electrical characterization of the Zn implanted layer, it was found that thermal annealing at 500°C removed the Poole-Frenkel current and high sheet resistance of 2 × 1013 Ω/sq was obtained. AlGaN/GaN HEMT (high electron mobility transistor) with Zn implanted isolation had good electrical characteristics.

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Zn ion implantation along the c axis for formation of highly resistive GaN layers

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