Abstract
Zn ion implantation along the c axis was investigated in order to fabricate a highly resistive GaN layer. It was calculated that Zn ions effectively transfer their energy to the crystal atoms due to the heavy mass. This energy transfer was able to create implanted damage, which induced the highly resistive layer. Secondary ion mass spectroscopy (SIMS) profile of Zn atoms revealed that Zn ions penetrated over 1 μm into GaN layer at the ion energy of 350 keV. In the electrical characterization of the Zn implanted layer, it was found that thermal annealing at 500°C removed the Poole-Frenkel current and high sheet resistance of 2 × 1013 Ω/sq was obtained. AlGaN/GaN HEMT (high electron mobility transistor) with Zn implanted isolation had good electrical characteristics.
| Original language | English |
|---|---|
| Pages (from-to) | 328-333 |
| Number of pages | 6 |
| Journal | Shinku/Journal of the Vacuum Society of Japan |
| Volume | 47 |
| Issue number | 4 |
| Publication status | Published - 2004 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Surfaces and Interfaces
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Zn ion implantation along the c axis for formation of highly resistive GaN layers. / Oishi, Toshiyuki; Miura, Naruhisa; Suita, Muneyoshi; Nanjo, Takuma; Abe, Yuji; Ozeki, Tatsuo; Ishikawa, Hiroyasu; Egawa, Takashi.
In: Shinku/Journal of the Vacuum Society of Japan, Vol. 47, No. 4, 2004, p. 328-333.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Zn ion implantation along the c axis for formation of highly resistive GaN layers
AU - Oishi, Toshiyuki
AU - Miura, Naruhisa
AU - Suita, Muneyoshi
AU - Nanjo, Takuma
AU - Abe, Yuji
AU - Ozeki, Tatsuo
AU - Ishikawa, Hiroyasu
AU - Egawa, Takashi
PY - 2004
Y1 - 2004
N2 - Zn ion implantation along the c axis was investigated in order to fabricate a highly resistive GaN layer. It was calculated that Zn ions effectively transfer their energy to the crystal atoms due to the heavy mass. This energy transfer was able to create implanted damage, which induced the highly resistive layer. Secondary ion mass spectroscopy (SIMS) profile of Zn atoms revealed that Zn ions penetrated over 1 μm into GaN layer at the ion energy of 350 keV. In the electrical characterization of the Zn implanted layer, it was found that thermal annealing at 500°C removed the Poole-Frenkel current and high sheet resistance of 2 × 1013 Ω/sq was obtained. AlGaN/GaN HEMT (high electron mobility transistor) with Zn implanted isolation had good electrical characteristics.
AB - Zn ion implantation along the c axis was investigated in order to fabricate a highly resistive GaN layer. It was calculated that Zn ions effectively transfer their energy to the crystal atoms due to the heavy mass. This energy transfer was able to create implanted damage, which induced the highly resistive layer. Secondary ion mass spectroscopy (SIMS) profile of Zn atoms revealed that Zn ions penetrated over 1 μm into GaN layer at the ion energy of 350 keV. In the electrical characterization of the Zn implanted layer, it was found that thermal annealing at 500°C removed the Poole-Frenkel current and high sheet resistance of 2 × 1013 Ω/sq was obtained. AlGaN/GaN HEMT (high electron mobility transistor) with Zn implanted isolation had good electrical characteristics.
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UR - http://www.scopus.com/inward/citedby.url?scp=33750828339&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:33750828339
VL - 47
SP - 328
EP - 333
JO - Journal of the Vacuum Society of Japan
JF - Journal of the Vacuum Society of Japan
SN - 1882-2398
IS - 4
ER -