電子工学科

研究成果

1983

A numerical model of selective meltback morphology on InP

Pak, K., Maeda, T., Nishinaga, T., Nakamura, T. & Yasuda, Y., 1983 12 2, : : Journal of Crystal Growth. 65, 1-3, p. 602-606 5 p.

研究成果: Article

1 引用 (Scopus)

NUMERICAL MODEL OF SELECTIVE MELTBACK MORPHOLOGY ON InP.

Pak, K., Maeda, T., Nishinaga, T., Nakamura, T. & Yasuda, Y., 1983 12 1, p. 602-606. 5 p.

研究成果: Paper

1984

NEW TRENCH ISOLATION TECHNOLOGY AS A REPLACEMENT OF LOCOS.

Mikoshiba, H., Homma, T. & Hamano, K., 1984 12 1, : : Technical Digest - International Electron Devices Meeting. p. 578-581 4 p.

研究成果: Conference article

10 引用 (Scopus)
1985

CML GAAS 4KB SRAM.

Takahashi, K., Maeda, T., Katano, F., Furutsuka, T. & Higashisaka, A., 1985 12 1, : : Digest of Technical Papers - IEEE International Solid-State Circuits Conference. p. 68-69, 308

研究成果: Conference article

5 引用 (Scopus)

HIGH TRANSCONDUCTANCE GaAs MESFETs FABRICATED USING SIDEWALL-ASSISTED SELF-ALIGNMENT TECHNOLOGY (SWAT).

Ueno, K., Furutsuka, T., Kanamori, M. & Higashisaka, A., 1985 12 1, Conference on Solid State Devices and Materials. Japan Soc of Applied Physics, p. 405-408 4 p. (Conference on Solid State Devices and Materials).

研究成果: Conference contribution

4 引用 (Scopus)

HIGH TRANSCONDUCTANCE GaAs MESFET WITH REDUCED SHORT CHANNEL EFFECT CHARACTERISTICS.

Ueno, K., Furutsuka, T., Toyoshima, H., Kanamori, M. & Higashisaka, A., 1985 12 1, : : Technical Digest - International Electron Devices Meeting. p. 82-85 4 p.

研究成果: Conference article

12 引用 (Scopus)
1987

GAAS 8 multiplied by 8 MATRIX SWITCH LSI FOR HIGH-SPEED DIGITAL COMMUNICATIONS.

Hayano, S. I., Nagashima, K., Asai, S., Maeda, T. & Furutsuka, T., 1987 12 1, p. 245-248. 4 p.

研究成果: Paper

12 引用 (Scopus)
1988

GaAs buffering circuit ISI for ultra-fast data processing systems

Maeda, T., Miyatake, Y., Tomonoh, Y., Asai, S., Ishikawa, M., Nakaizumi, K., Ohno, Y., Ohno, N. & Furutsuka, T., 1988 12 1, p. 139-142. 4 p.

研究成果: Paper

2 引用 (Scopus)

New polyimide film paves way for super high-speed logic devices

Homma, T., Numasawa, Y., Murao, Y. & Hamano, K., 1988 11 1, : : JEE. Journal of electronic engineering. 25, 263, p. 74-79 6 p.

研究成果: Article

1 引用 (Scopus)

New polyimide siloxane film for interlayer dielectrics in sub-micron multilevel interconnection.

Homma, T., Eguchi, K., Numasawa, Y., Kikkawa, T., Hokari, Y. & Hamano, K., 1988 12 1, p. 279-285. 7 p.

研究成果: Paper

6 引用 (Scopus)

Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates

Ueno, K., Hida, H., Ogawa, Y., Tsukada, Y. & Nozaki, T., 1988 12 1, : : Technical Digest - International Electron Devices Meeting. p. 846-849 4 p.

研究成果: Conference article

2 引用 (Scopus)
1989

Multilevel gold metallization by use of selective W-CVD and polyimide siloxane film

Mikagi, K., Homma, T., Katoh, T., Tsunenari, K. & Murao, Y., 1989 12 1, p. 33-39. 7 p.

研究成果: Paper

4 引用 (Scopus)
1990

A new interlayer formation technology for completely planarized multilevel interconnection by using LPD

Homma, T., Katoh, T., Yamada, Y., Shimizu, J. & Murao, Y., 1990 12 1, : : Digest of Technical Papers - Symposium on VLSI Technology. p. 3-4 2 p., 5727439.

研究成果: Conference article

12 引用 (Scopus)

Epitaxial Al Schottky contacts formed on (111) GaAs

Ueno, K., Yoshida, T. & Hirose, K., 1990 12 1, : : Applied Physics Letters. 56, 22, p. 2204-2206 3 p.

研究成果: Article

3 引用 (Scopus)

Low temperature interlayer formation technology using a new siloxane polymer film

Suzuki, M., Homma, T. & Numasawa, Y., 1990 12 1, p. 173-179. 7 p.

研究成果: Paper

3 引用 (Scopus)
1991

Amplitude distribution control of ultrasonic vibration tools with a 2-D extended radiation surface

Koike, Y., Kurosawa, M., Ueha, S. & Adachi, K., 1991 1 1, : : Proceedings - IEEE Ultrasonics Symposium. p. 983-986 4 p., 234262.

研究成果: Conference article

1 引用 (Scopus)

Fully planarized multilevel interconnection using selective SiO2 deposition

Homma, T., Katoh, T., Yamada, Y., Shimizu, J. & Murao, Y., 1991 7 1, : : NEC Research and Development. 32, 3, p. 315-322 8 p.

研究成果: Article

13 引用 (Scopus)

Hybrid transducer type ultrasonic linear motor using flexural vibrator

Kurosawa, M., Nishita, K., Koike, Y. & Ueha, S., 1991 1, : : Japanese Journal of Applied Physics. 30, p. 209-211 3 p.

研究成果: Article

16 引用 (Scopus)

Novel slip-free rapid thermal annealing of GaAs in vacuum with excellent uniformity and reproducibility

Kohno, M., Hida, H., Ogawa, Y., Fujii, M., Maeda, T., Ohata, K. & Tsukada, Y., 1991 12 1, : : Journal of Applied Physics. 69, 3, p. 1294-1299 6 p.

研究成果: Article

1992

Low power consumption 16:1 MUX/DMUX for the STM-16 transmission systems based on DMT DCFL circuits

Fujii, M., Tokushima, M., Ishikawa, M., Fukaishi, M., Maeda, T., Hida, H., Ohno, Y. & Takano, I., 1992 7 1, NEC Research and Development. 3 版 巻 33. p. 313-323 11 p.

研究成果: Chapter

1 引用 (Scopus)
1993

0.6V supply voltage 0.25 μm E/D-HJFET(IS3T) LSI technology for low power consumption and high speed LSIs

Hida, H., Tokushima, M., Maeda, T., Ishikawa, M., Fukaishi, M., Numata, K. & Ohno, Y., 1993 12 1, Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Anon (版). Publ by IEEE, p. 197-200 4 p. (Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)).

研究成果: Conference contribution

17 引用 (Scopus)

A 7-Mask CMOS Process with Selective Oxide Deposition

Horiuchi, T., Homma, T., Murao, Y. & Okumura, K., 1993 8, : : IEEE Transactions on Electron Devices. 40, 8, p. 1455-1460 6 p.

研究成果: Article

12 引用 (Scopus)
1 引用 (Scopus)
65 引用 (Scopus)
18 引用 (Scopus)
23 引用 (Scopus)

Focusing type high power transducer using burst drive for ultrasonic welding

Kurosawa, M., Nakazawa, K., Koike, Y. & Ueha, S., 1993 12 1, Proceedings of the IEEE Ultrasonics Symposium. Levy, M. & McAvoy, B. R. (版). Publ by IEEE, p. 401-404 4 p. (Proceedings of the IEEE Ultrasonics Symposium; 巻数 1).

研究成果: Conference contribution

Multilevel planarized-trench-aluminum (PTA) interconnection using reflow sputtering and chemical mechanical polishing

Kikuta, K., Nakajima, T., Ueno, K. & Kikkawa, T., 1993 12 1, Technical Digest - International Electron Devices Meeting. Anon (版). Publ by IEEE, p. 285-288 4 p. (Technical Digest - International Electron Devices Meeting).

研究成果: Conference contribution

11 引用 (Scopus)

Novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSIs

Maeda, T., Numata, K., Tokushima, M., Ishikawa, M., Fukaishi, M., Hida, H. & Ohno, Y., 1993 12 1, Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Anon (版). Publ by IEEE, p. 75-78 4 p. (Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)).

研究成果: Conference contribution

10 引用 (Scopus)

Stability of a new polyimide siloxane film as interlayer dielectrics of ULSI multilevel interconnections

Homma, T., Kutsuzawa, Y., Kunimune, K. & Murao, Y., 1993 11 25, : : Thin Solid Films. 235, 1-2, p. 80-85 6 p.

研究成果: Article

20 引用 (Scopus)

Study on time-length processing by neural networks

Kanoh, S., Futami, R. & Hoshimiya, N., 1993 12 1, Proceedings of the International Joint Conference on Neural Networks. Publ by IEEE, p. 151-154 4 p. (Proceedings of the International Joint Conference on Neural Networks; 巻数 1).

研究成果: Conference contribution

1 引用 (Scopus)
1994

Asymmetric sidewall process for high performance LDD MOSFET's

Horiuchi, T., Homma, T., Murao, Y. & Okumura, K., 1994 2 1, : : IEEE Transactions on Electron Devices. 41, 2, p. 186-190 5 p.

研究成果: Article

29 引用 (Scopus)

Investigation on SnS film by RF sputtering for photovoltaic application

Guang-Pu, W., Zhi-Lin, Z., Wei-Ming, Z., Xiang-Hong, G., Wei-Qun, C., Tanamura, H., Yamaguchi, M., Noguchi, H., Nagatomo, T. & Omoto, O., 1994 12 1, : : Conference Record of the IEEE Photovoltaic Specialists Conference. 1, p. 365-368 4 p.

研究成果: Conference article

28 引用 (Scopus)

Loss increase of (LuNdBi)3(FeAl)5O12 films caused by sputter etching

Yokoi, H., Mizumoto, T., Ida, T., Kozakai, K. & Naito, Y., 1994 11 1, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 33, 11, p. 6355-6359 5 p.

研究成果: Article

7 引用 (Scopus)

Loss increase of (LuNdBi)3(FeAl)5 O12 films caused by sputter etching

Yokoi, H., Mizumoto, T., Ida, T., Kozakai, K. K. & Naito, Y., 1994 11, : : Japanese Journal of Applied Physics. 33, 11R, p. 635-639 5 p.

研究成果: Article

20 引用 (Scopus)

Ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage

Fujii, M., Maeda, T., Ohno, Y., Tokushima, M., Ishikawa, M., Fukaishi, M. & Hida, H., 1994 12 1, p. 51-54. 4 p.

研究成果: Paper

1 引用 (Scopus)
1995

0.1-μm p+-GaAs gate HJFETs with fT= 121 GHz fabricated using all dry-etching and selective MOMBE growth

Wada, S., Furuhata, N., Tokushima, M., Fukaishi, M., Hida, H. & Maeda, T., 1995 12 1, : : Technical Digest - International Electron Devices Meeting. p. 197-200 4 p.

研究成果: Conference article

1 引用 (Scopus)

Direct bonding between InP and rare earth iron garnet grown on Gd3Ga5O12 substrate by liquid phase epitaxy

Yokoi, H., Mizumoto, T., Maru, K. & Naito, Y., 1995 8 31, : : Electronics Letters. 31, 18, p. 1612-1613 2 p.

研究成果: Article

21 引用 (Scopus)
7 引用 (Scopus)
7 引用 (Scopus)

Half-micron pitch Cu interconnection technology

Ueno, K., Ohto, K. & Tsunenari, K., 1995 12 1, : : Digest of Technical Papers - Symposium on VLSI Technology. p. 27-28 2 p.

研究成果: Conference article

12 引用 (Scopus)

High-speed low-power tri-state driver flip-flop for sub-1 V supply voltage GaAs heterojunction FET LSIs

Maeda, T., Numata, K., Tokushima, M., Ishikawa, M., Fukaishi, M., Hida, H. & Ohno, Y., 1995 1 1, NEC Research and Development. 1 版 巻 36. p. 157-164 8 p.

研究成果: Chapter

公開
5 引用 (Scopus)

Optical propagation loss increase of (Gdbi)3fe5o12 films caused by sputter etching

Yokoi, H., Mizumoto, T. & Naito, Y., 1995 9, : : Japanese Journal of Applied Physics. 34, 9R, p. 4817-4818 2 p.

研究成果: Comment/debate

1 引用 (Scopus)

Physical properties of bi4ti3o12films grown on si(100) wafers

Yamaguchi, M., Nagatomo, T. & Omoto, O., 1995 9, : : Japanese Journal of Applied Physics. 34, 9, p. 5116-5119 4 p.

研究成果: Article

12 引用 (Scopus)

Present and future directions for multichip module technologies

Sudo, T., 1995 6, : : IEICE Transactions on Electronics. E78-C, 6, p. 684-690 7 p.

研究成果: Article

15 引用 (Scopus)

Recognition of sialic acid using molecularly imprinted polymer

Kugimiya, A., Yano, K., Muguruma, H., Elgersmal, A. V., Karubel, I., Matsui, J. & Takeuchi, T., 1995 1 1, : : Analytical Letters. 28, 13, p. 2317-2323 7 p.

研究成果: Article

35 引用 (Scopus)

Sub-1 V supply voltage GaAs LSI technology based on 0.25 μm E/D-HJFETs (IS3Ts)

Hida, H., Tokushima, M., Maeda, T., Ishikawa, M., Fukaishi, M., Numata, K. & Ohno, Y., 1995 1 1, NEC Research and Development. 1 版 巻 36. p. 147-156 10 p.

研究成果: Chapter