年単位の研究成果
研究成果
2018
2014
Reducing signal transmission loss by low surface roughness
Okubo, T. A., Sudo, T., Hosoi, T., Tsuyoshi, H. & Kuwako, F., 2014 1 1.研究成果: Paper
Signal transmission loss due to copper surface roughness in high-frequency region
Liew, E., Malaysia, M. C. F., Malaysia, S. A., Okubo, T. A., Sudo, T., Hosoi, T., Tsuyoshi, H. & Kuwako, F., 2014 1 1.研究成果: Paper
4
引用
（Scopus）
2013
Brain-computer interface based on explicit and implicit mental process
Kanoh, SI., 2013 1 1, p. 308-309. 2 p.研究成果: Paper
Data processing using b-spline and controller design for data conversion method
Nakamura, Y., Kubota, K., Premachandra, C. & Kato, K., 2013 1 1, p. 1211-1216. 6 p.研究成果: Paper
Power integrity behavior for various packaging environments
Terasaki, M., Kiyosige, S., Ichimura, W., Kobayashi, R., Kubo, G., Otsuka, H. & Sudo, T., 2013 1 1.研究成果: Paper
2
引用
（Scopus）
Ultra-wideband noise suppression of power supply noise by combining mushroom and planar type EBG structures
Ikemiya, K., Sakai, M. & Sudo, T., 2013 1 1.研究成果: Paper
1
引用
（Scopus）
2005
Interferometric optical isolator with Si gudiing layer operated in unidirectional magnetic field
Yokoi, H., 2005 12 1, p. 450-457. 8 p.研究成果: Paper
Reliability of damascene copper interconnects
Ueno, K., Ishigarni, T., Kakuhara, Y. & Kawano, M., 2005 12 1, p. 408-418. 11 p.研究成果: Paper
1
引用
（Scopus）
2004
GaN-based optoelectronic devices on Si grown by MOCVD
Ishikawa, H. & Egawa, T., 2004 10 28, p. 34-38. 5 p.研究成果: Paper
2003
A high-power-handling GSM switch IC with new adaptive-control-voltage-generator circuit scheme
Numata, K., Takahashi, Y., Maeda, T. & Hida, H., 2003 8 22, p. 233-236. 4 p.研究成果: Paper
6
引用
（Scopus）
TE-TM Mode conversion optical isolator fabricated by wafer bonding
Yokoi, H., Mizumoto, T. & Iwasaki, H., 2003 12 1, p. 130-136. 7 p.研究成果: Paper
2002
A +2.4/0 V controlled high power GaAs SPDT antenna switch IC for GSM application
Numata, K., Takahashi, Y., Maeda, T. & Hida, H., 2002 1 1, p. 141-144. 4 p.研究成果: Paper
7
引用
（Scopus）
Physical properties of MOD derived Bi4Ti3O12/Bi2SiO5/Si structures
Yamaguchi, M., Nagatomo, T. & Masuda, Y., 2002 12 1, p. 231-234. 4 p.研究成果: Paper
3
引用
（Scopus）
2001
Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate
Arulkumaran, S., Egawa, T., Zhao, G., Ishikawa, H. & Umeno, M., 2001 1 1, p. 91-92. 2 p.研究成果: Paper
High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate
Sano, Y., Yamada, T., Mita, J., Kaifu, K., Ishikawa, H., Egawa, T. & Umeno, M., 2001 1 1, p. 81-82. 2 p.研究成果: Paper
3
引用
（Scopus）
Single-shot measurement of the carrier envelope phase by observing the spectral interference
Kakehata, M., Torizuka, K., Fujihira, Y., Homma, T. & Takahashi, H., 2001 12 1, p. II180-II181.研究成果: Paper
Single-shot measurement of the carrier-envelope phase through observation of the self-referencing spectral interferometry
Kakehata, M., Takada, H., Kobayashi, Y., Torizuka, K., Fujihira, Y., Homma, T. & Takahashi, H., 2001 10 8, p. xxxix-xl.研究成果: Paper
2000
Fabrication and properties of Bi2SiO5 thin films for MFIS structures
Yamaguchi, M., Hiraki, K., Homma, T., Nagatomo, T. & Masuda, Y., 2000 12 1, p. 629-632. 4 p.研究成果: Paper
3
引用
（Scopus）
Integration of terraced laser diode and optical isolator by wafer direct bonding
Yokoi, H. & Mizumoto, T., 2000 1 1. 1 p.研究成果: Paper
1998
27 GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1-μm double-deck-shaped (DDS) gate E/D-HJFETs
Wada, S., Maeda, T., Tokushima, M., Yamazaki, J., Ishikawa, M. & Fujii, M., 1998 12 1, p. 125-128. 4 p.研究成果: Paper
9
引用
（Scopus）
Low temperature wafer direct bonding between GaInAsP etch stop layer and Gd3Ga5O12
Yokoi, H. & Mizumoto, T., 1998 1 1. 1 p.研究成果: Paper
1997
Low-power-consumption 10-Gbps GaAs 8:1 multiplexer/1:8 demultiplexer
Yoshida, N., Fujii, M., Atsumo, T., Numata, K., Asai, S., Kohno, M., Oikawa, H., Tsutsui, H. & Maeda, T., 1997 12 1, p. 113-116. 4 p.研究成果: Paper
7
引用
（Scopus）
Ultra-low-power-consumption high-speed GaAs 256/258 dual-modulus prescaler IC
Maeda, T., Wada, S., Tokushima, M., Ishikawa, M., Yamazaki, J. & Fujii, M., 1997 12 1, p. [d]175-178.研究成果: Paper
3
引用
（Scopus）
1996
Direct bonding between laser wafers and magneto-optic waveguides
Yokoi, H., Mizumoto, T., Maru, K. & Naito, Y., 1996 1 1. 1 p.研究成果: Paper
1995
Ultra-low-power-consumption heterojunction FET 8:1 MUX/1:8 DEMUX for 2.4-GBPS optical-fiber communication systems
Numata, K., Fujii, M., Maeda, T., Tokushima, M., Wada, S., Fukaishi, M. & Ishikawa, M., 1995 12 1, p. 39-42. 4 p.研究成果: Paper
4
引用
（Scopus）
1994
Ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage
Fujii, M., Maeda, T., Ohno, Y., Tokushima, M., Ishikawa, M., Fukaishi, M. & Hida, H., 1994 12 1, p. 51-54. 4 p.研究成果: Paper
1
引用
（Scopus）
1990
Low temperature interlayer formation technology using a new siloxane polymer film
Suzuki, M., Homma, T. & Numasawa, Y., 1990 12 1, p. 173-179. 7 p.研究成果: Paper
3
引用
（Scopus）
1989
Multilevel gold metallization by use of selective W-CVD and polyimide siloxane film
Mikagi, K., Homma, T., Katoh, T., Tsunenari, K. & Murao, Y., 1989 12 1, p. 33-39. 7 p.研究成果: Paper
4
引用
（Scopus）
1988
GaAs buffering circuit ISI for ultra-fast data processing systems
Maeda, T., Miyatake, Y., Tomonoh, Y., Asai, S., Ishikawa, M., Nakaizumi, K., Ohno, Y., Ohno, N. & Furutsuka, T., 1988 12 1, p. 139-142. 4 p.研究成果: Paper
2
引用
（Scopus）
New polyimide siloxane film for interlayer dielectrics in sub-micron multilevel interconnection.
Homma, T., Eguchi, K., Numasawa, Y., Kikkawa, T., Hokari, Y. & Hamano, K., 1988 12 1, p. 279-285. 7 p.研究成果: Paper
6
引用
（Scopus）
1987
GAAS 8 multiplied by 8 MATRIX SWITCH LSI FOR HIGH-SPEED DIGITAL COMMUNICATIONS.
Hayano, S. I., Nagashima, K., Asai, S., Maeda, T. & Furutsuka, T., 1987 12 1, p. 245-248. 4 p.研究成果: Paper
12
引用
（Scopus）
1983
NUMERICAL MODEL OF SELECTIVE MELTBACK MORPHOLOGY ON InP.
Pak, K., Maeda, T., Nishinaga, T., Nakamura, T. & Yasuda, Y., 1983 12 1, p. 602-606. 5 p.研究成果: Paper