電子工学科

研究成果

フィルター
Paper
2014

Reducing signal transmission loss by low surface roughness

Okubo, T. A., Sudo, T., Hosoi, T., Tsuyoshi, H. & Kuwako, F., 2014 1 1.

研究成果: Paper

Signal transmission loss due to copper surface roughness in high-frequency region

Liew, E., Malaysia, M. C. F., Malaysia, S. A., Okubo, T. A., Sudo, T., Hosoi, T., Tsuyoshi, H. & Kuwako, F., 2014 1 1.

研究成果: Paper

4 引用 (Scopus)
2013

Data processing using b-spline and controller design for data conversion method

Nakamura, Y., Kubota, K., Premachandra, C. & Kato, K., 2013 1 1, p. 1211-1216. 6 p.

研究成果: Paper

Power integrity behavior for various packaging environments

Terasaki, M., Kiyosige, S., Ichimura, W., Kobayashi, R., Kubo, G., Otsuka, H. & Sudo, T., 2013 1 1.

研究成果: Paper

2 引用 (Scopus)
1 引用 (Scopus)
2005

Reliability of damascene copper interconnects

Ueno, K., Ishigarni, T., Kakuhara, Y. & Kawano, M., 2005 12 1, p. 408-418. 11 p.

研究成果: Paper

1 引用 (Scopus)
2004

GaN-based optoelectronic devices on Si grown by MOCVD

Ishikawa, H. & Egawa, T., 2004 10 28, p. 34-38. 5 p.

研究成果: Paper

2003

A high-power-handling GSM switch IC with new adaptive-control-voltage-generator circuit scheme

Numata, K., Takahashi, Y., Maeda, T. & Hida, H., 2003 8 22, p. 233-236. 4 p.

研究成果: Paper

6 引用 (Scopus)

TE-TM Mode conversion optical isolator fabricated by wafer bonding

Yokoi, H., Mizumoto, T. & Iwasaki, H., 2003 12 1, p. 130-136. 7 p.

研究成果: Paper

2002

A +2.4/0 V controlled high power GaAs SPDT antenna switch IC for GSM application

Numata, K., Takahashi, Y., Maeda, T. & Hida, H., 2002 1 1, p. 141-144. 4 p.

研究成果: Paper

7 引用 (Scopus)

Physical properties of MOD derived Bi4Ti3O12/Bi2SiO5/Si structures

Yamaguchi, M., Nagatomo, T. & Masuda, Y., 2002 12 1, p. 231-234. 4 p.

研究成果: Paper

3 引用 (Scopus)
2001

Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate

Arulkumaran, S., Egawa, T., Zhao, G., Ishikawa, H. & Umeno, M., 2001 1 1, p. 91-92. 2 p.

研究成果: Paper

High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate

Sano, Y., Yamada, T., Mita, J., Kaifu, K., Ishikawa, H., Egawa, T. & Umeno, M., 2001 1 1, p. 81-82. 2 p.

研究成果: Paper

3 引用 (Scopus)

Single-shot measurement of the carrier envelope phase by observing the spectral interference

Kakehata, M., Torizuka, K., Fujihira, Y., Homma, T. & Takahashi, H., 2001 12 1, p. II180-II181.

研究成果: Paper

Single-shot measurement of the carrier-envelope phase through observation of the self-referencing spectral interferometry

Kakehata, M., Takada, H., Kobayashi, Y., Torizuka, K., Fujihira, Y., Homma, T. & Takahashi, H., 2001 10 8, p. xxxix-xl.

研究成果: Paper

2000

Fabrication and properties of Bi2SiO5 thin films for MFIS structures

Yamaguchi, M., Hiraki, K., Homma, T., Nagatomo, T. & Masuda, Y., 2000 12 1, p. 629-632. 4 p.

研究成果: Paper

3 引用 (Scopus)
1998

27 GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1-μm double-deck-shaped (DDS) gate E/D-HJFETs

Wada, S., Maeda, T., Tokushima, M., Yamazaki, J., Ishikawa, M. & Fujii, M., 1998 12 1, p. 125-128. 4 p.

研究成果: Paper

9 引用 (Scopus)
1997

Low-power-consumption 10-Gbps GaAs 8:1 multiplexer/1:8 demultiplexer

Yoshida, N., Fujii, M., Atsumo, T., Numata, K., Asai, S., Kohno, M., Oikawa, H., Tsutsui, H. & Maeda, T., 1997 12 1, p. 113-116. 4 p.

研究成果: Paper

7 引用 (Scopus)

Ultra-low-power-consumption high-speed GaAs 256/258 dual-modulus prescaler IC

Maeda, T., Wada, S., Tokushima, M., Ishikawa, M., Yamazaki, J. & Fujii, M., 1997 12 1, p. [d]175-178.

研究成果: Paper

3 引用 (Scopus)
1996

Direct bonding between laser wafers and magneto-optic waveguides

Yokoi, H., Mizumoto, T., Maru, K. & Naito, Y., 1996 1 1. 1 p.

研究成果: Paper

1995

Ultra-low-power-consumption heterojunction FET 8:1 MUX/1:8 DEMUX for 2.4-GBPS optical-fiber communication systems

Numata, K., Fujii, M., Maeda, T., Tokushima, M., Wada, S., Fukaishi, M. & Ishikawa, M., 1995 12 1, p. 39-42. 4 p.

研究成果: Paper

4 引用 (Scopus)
1994

Ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage

Fujii, M., Maeda, T., Ohno, Y., Tokushima, M., Ishikawa, M., Fukaishi, M. & Hida, H., 1994 12 1, p. 51-54. 4 p.

研究成果: Paper

1 引用 (Scopus)
1990

Low temperature interlayer formation technology using a new siloxane polymer film

Suzuki, M., Homma, T. & Numasawa, Y., 1990 12 1, p. 173-179. 7 p.

研究成果: Paper

3 引用 (Scopus)
1989

Multilevel gold metallization by use of selective W-CVD and polyimide siloxane film

Mikagi, K., Homma, T., Katoh, T., Tsunenari, K. & Murao, Y., 1989 12 1, p. 33-39. 7 p.

研究成果: Paper

4 引用 (Scopus)
1988

GaAs buffering circuit ISI for ultra-fast data processing systems

Maeda, T., Miyatake, Y., Tomonoh, Y., Asai, S., Ishikawa, M., Nakaizumi, K., Ohno, Y., Ohno, N. & Furutsuka, T., 1988 12 1, p. 139-142. 4 p.

研究成果: Paper

2 引用 (Scopus)

New polyimide siloxane film for interlayer dielectrics in sub-micron multilevel interconnection.

Homma, T., Eguchi, K., Numasawa, Y., Kikkawa, T., Hokari, Y. & Hamano, K., 1988 12 1, p. 279-285. 7 p.

研究成果: Paper

6 引用 (Scopus)
1987

GAAS 8 multiplied by 8 MATRIX SWITCH LSI FOR HIGH-SPEED DIGITAL COMMUNICATIONS.

Hayano, S. I., Nagashima, K., Asai, S., Maeda, T. & Furutsuka, T., 1987 12 1, p. 245-248. 4 p.

研究成果: Paper

12 引用 (Scopus)
1983

NUMERICAL MODEL OF SELECTIVE MELTBACK MORPHOLOGY ON InP.

Pak, K., Maeda, T., Nishinaga, T., Nakamura, T. & Yasuda, Y., 1983 12 1, p. 602-606. 5 p.

研究成果: Paper