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5 引用 (Scopus)
7 引用 (Scopus)
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Direct determination of etofenprox using surface plasmon resonance

Sasaki, S., Kai, E., Miyachi, H., Muguruma, H., Ikebukuro, K., Ohkawa, H. & Karube, I., 1998 5 15, : : Analytica Chimica Acta. 363, 2-3, p. 229-233 5 p.

研究成果: Article

17 引用 (Scopus)
公開
2 引用 (Scopus)

EBIC observation of n-GaN grown on sapphire substrates by MOCVD

Yamamoto, K., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 1998 6 15, : : Journal of Crystal Growth. 189-190, p. 575-579 5 p.

研究成果: Article

17 引用 (Scopus)

ECL-compatible low-power-consumption 10-Gb/s GaAs 8: 1 multiplexer and 1 : 8 demultiplexer

Yoshida, N., Fujii, M., Atsumo, T., Numata, K., Kohnq, M., Oikawa, H., Tsutsui, H. & Maeda, T., 1999 1 1, : : IEICE Transactions on Electronics. E82-C, 11, p. 1992-1998 7 p.

研究成果: Article

2 引用 (Scopus)
11 引用 (Scopus)
公開
31 引用 (Scopus)

Effect of sintering temperature of Ce3+-doped Lu3Al5O12 phosphors on light emission and properties of crystal structure for white-light-emitting diodes

Koizumi, H., Watabe, J., Sugiyama, S., Hirabayashi, H. & Homma, T., 2018 6 1, : : Optical Review. 25, 3, p. 340-348 9 p.

研究成果: Article

1 引用 (Scopus)
22 引用 (Scopus)

Effects of annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky diodes

Arulkumaran, S., Egawa, T., Ishikawa, H., Umeno, M. & Jimbo, T., 2001 3 1, : : IEEE Transactions on Electron Devices. 48, 3, p. 573-580 8 p.

研究成果: Article

67 引用 (Scopus)

Effects of Interfacial Thin Metal Layer for High-Performance Pt-Au-Based Schottky Contacts to AlGaN-GaN

Miura, N., Oishi, T., Nanjo, T., Suita, M., Abe, Y., Ozeki, T., Ishikawa, H. & Egawa, T., 2004 3 1, : : IEEE Transactions on Electron Devices. 51, 3, p. 297-303 7 p.

研究成果: Article

28 引用 (Scopus)

Effects of RTA cover material on the properties of GaNAs/GaAs triple quantum wells grown by chemical beam epitaxy

Sun, Y., Yamamori, M., Egawa, T., Ishikawa, H. & Mito, K., 2004 9 1, : : Journal of Crystal Growth. 269, 2-4, p. 229-234 6 p.

研究成果: Article

2 引用 (Scopus)

Electrical characteristics of AlGaN/GaN HEMTs on 4-in diameter sapphire substrate

Arulkumaran, S., Miyoshi, M., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 8 1, : : IEEE Electron Device Letters. 24, 8, p. 497-499 3 p.

研究成果: Article

20 引用 (Scopus)
9 引用 (Scopus)
18 引用 (Scopus)
2 引用 (Scopus)

Electrochemical determination of uric acid in urine and serum with uricase/carbon nanotube /carboxymethylcellulose electrode

Fukuda, T., Muguruma, H., Iwasa, H., Tanaka, T., Hiratsuka, A., Shimizu, T., Tsuji, K. & Kishimoto, T., 2020 2 1, : : Analytical Biochemistry. 590, 113533.

研究成果: Article

3 引用 (Scopus)
31 引用 (Scopus)
55 引用 (Scopus)

Electromigration lifetime enhancement of CoWP capped Cu interconnects by thermal treatment

Kakuhara, Y., Kawahara, N., Ueno, K. & Oda, N., 2008 6 13, : : Japanese Journal of Applied Physics. 47, 6 PART 1, p. 4475-4479 5 p.

研究成果: Article

9 引用 (Scopus)
29 引用 (Scopus)
2 引用 (Scopus)

Electron transfer mediator micro-biosensor fabrication by organic plasma process

Hiratsuka, A., Kojima, K. I., Muguruma, H., Lee, K. H., Suzuki, H. & Karube, I., 2005 12 15, : : Biosensors and Bioelectronics. 21, 6, p. 957-964 8 p.

研究成果: Article

13 引用 (Scopus)

Elimination of a back-reflected TE mode in a TM-mode optical isolator with a Mach-Zehnder interferometer

Yokoi, H., Mizumoto, T., Kuroda, S., Ohtsuka, T. & Nakano, Y., 2002 11 20, : : Applied Optics. 41, 33, p. 7045-7051 7 p.

研究成果: Article

3 引用 (Scopus)
87 引用 (Scopus)
1 引用 (Scopus)
23 引用 (Scopus)

Epitaxial Al Schottky contacts formed on (111) GaAs

Ueno, K., Yoshida, T. & Hirose, K., 1990 12 1, : : Applied Physics Letters. 56, 22, p. 2204-2206 3 p.

研究成果: Article

3 引用 (Scopus)
1 引用 (Scopus)
3 引用 (Scopus)

Fabrication of Bi4Ti3O12 films on Pt substrates by inkjet printing

Yamaguchi, M., Yamamoto, A. & Masuda, Y., 2007 8, : : Journal of the Korean Physical Society. 51, 2 PART I, p. 747-750 4 p.

研究成果: Article

6 引用 (Scopus)

Fabrication of BIT thick films patterned by proton beam writing

Yamaguchi, M., Watanabe, K., Nishikawa, H. & Masuda, Y., 2017 7 1, : : Journal of the Korean Physical Society. 71, 2, p. 88-91 4 p.

研究成果: Article

1 引用 (Scopus)

Fabrication of electroless CoWP/NiB diffusion barrier layer on SiO 2 for ULSI Devices

Osaka, T., Aramaki, H., Yoshino, M., Ueno, K., Matsuda, I. & Shacham-Diamand, Y., 2009 8 7, : : Journal of the Electrochemical Society. 156, 9, p. H707-H710

研究成果: Article

21 引用 (Scopus)

Fabrication of electroless NiReP barrier layer on SiO2 without sputtered seed layer

Osaka, T., Takano, N., Kurokawa, T. & Ueno, K., 2002 1 1, : : Electrochemical and Solid-State Letters. 5, 1, p. C7-C10

研究成果: Article

45 引用 (Scopus)
14 引用 (Scopus)

Fabrication of semiconductor laser for integration with optical isolator

Sakurai, K., Yokoi, H., Mizumoto, T., Miyashita, D. & Nakano, Y., 2004 4, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 4 A, p. 1388-1392 5 p.

研究成果: Article

2 引用 (Scopus)

Fabrication process of thick fluorescent layer for flat panel displays using a new paste supply system

Tsuchiya, H., Miyauchi, K. & Homma, T., 2015 6 16, : : Optical Review. 22, 4, p. 647-653 7 p.

研究成果: Article

Feasibility of integrated optical isolator with semiconductor guiding layer fabricated by wafer direct bonding

Yokoi, H., Mizumoto, T., Shinjo, N., Futakuchi, N., Kaida, N. & Nakano, Y., 1999 1 1, : : IEE Proceedings: Optoelectronics. 146, 2, p. 105-110 6 p.

研究成果: Article

9 引用 (Scopus)
2 引用 (Scopus)
23 引用 (Scopus)