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11 引用 (Scopus)
10 引用 (Scopus)

Fully planarized multilevel interconnection using selective SiO2 deposition

Homma, T., Katoh, T., Yamada, Y., Shimizu, J. & Murao, Y., 1991 7 1, : : NEC Research and Development. 32, 3, p. 315-322 8 p.

研究成果: Article

13 引用 (Scopus)

GaN-based optoelectronic devices on sapphire and Si substrates

Umeno, M., Egawa, T. & Ishikawa, H., 2001 12 1, : : Materials Science in Semiconductor Processing. 4, 6, p. 459-466 8 p.

研究成果: Article

32 引用 (Scopus)
1 引用 (Scopus)

GaN MESFETs on (111) Si substrate grown by MOCVD

Egawa, T., Nakada, N., Ishikawa, H. & Umeno, M., 2000 10 12, : : Electronics Letters. 36, 21, p. 1816-1818 3 p.

研究成果: Article

40 引用 (Scopus)

GaN metal-semiconductor-metal UV photodetector with recessed electrodes

Jiang, H., Okui, A., Ishikawa, H., Shao, C. L., Egawa, T. & Jimbo, T., 2002 1 15, : : Japanese Journal of Applied Physics, Part 2: Letters. 41, 1 A/B, p. L34-L36

研究成果: Article

5 引用 (Scopus)

GaN on Si Substrate with AlGaN/AlN Intermediate Layer

Ishikawa, H., Zhao, G. Y., Nakada, N., Egawa, T., Jimbo, T. & Umeno, M., 1999 5 1, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38, 5 PART 2, p. 492-494 3 p.

研究成果: Article

186 引用 (Scopus)

Grain growth enhancement of electroplated copper film by supercritical annealing

Ueno, K., Shimada, Y., Yomogida, S., Akahori, S., Yamamoto, T., Yamaguchi, T., Aoki, Y., Matsuyama, A., Yata, T. & Hashimoto, H., 2010 5 1, : : Japanese Journal of Applied Physics. 49, 5 PART 3, p. 05FA081-05FA086

研究成果: Article

2 引用 (Scopus)

Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire

Liu, Y., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 12 1, : : Journal of Crystal Growth. 259, 3, p. 245-251 7 p.

研究成果: Article

31 引用 (Scopus)

Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE

Miyoshi, M., Sakai, M., Ishikawa, H., Egawa, T., Jimbo, T., Tanaka, M. & Oda, O., 2003 10, : : IEICE Transactions on Electronics. E86-C, 10, p. 2077-2081 5 p.

研究成果: Article

4 引用 (Scopus)

Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

Sakai, M., Ishikawa, H., Egawa, T., Jimbo, T., Umeno, M., Shibata, T., Asai, K., Sumiya, S., Kuraoka, Y., Tanaka, M. & Oda, O., 2002 9 1, : : Journal of Crystal Growth. 244, 1, p. 6-11 6 p.

研究成果: Article

51 引用 (Scopus)

Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition

Zhao, G. Y., Adachi, M., Ishikawa, H., Egawa, T., Umeno, M. & Jimbo, T., 2000 10 2, : : Applied Physics Letters. 77, 14, p. 2195-2197 3 p.

研究成果: Article

24 引用 (Scopus)

Heat-Resistant co-w catalytic metals for multilayer graphene chemical vapor deposition

Ueno, K., Karasawa, Y., Kuwahara, S., Baba, S., Hanai, H., Yamazaki, Y., Sakuma, N., Kajita, A. & Sakai, T., 2013 4 1, : : Japanese Journal of Applied Physics. 52, 4 PART 2, 04CB04.

研究成果: Article

5 引用 (Scopus)
10 引用 (Scopus)

High-electron-mobility AlGaN/AIN/GaN heterostructures grown on 100-mm-diam epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy

Miyoshi, M., Ishikawa, H., Egawa, T., Asai, K., Mouri, M., Shibata, T., Tanaka, M. & Oda, O., 2004 9 6, : : Applied Physics Letters. 85, 10, p. 1710-1712 3 p.

研究成果: Article

87 引用 (Scopus)

Highly efficient GaN-based light emitting diodes with micropits

Hao, M., Egawa, T. & Ishikawa, H., 2006 12 29, : : Applied Physics Letters. 89, 24, 241907.

研究成果: Article

16 引用 (Scopus)

Highly resistive GaN layers formed by ion implantation of Zn along the c axis

Oishi, T., Miura, N., Suita, M., Nanjo, T., Abe, Y., Ozeki, T., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 8 1, : : Journal of Applied Physics. 94, 3, p. 1662-1666 5 p.

研究成果: Article

41 引用 (Scopus)
3 引用 (Scopus)
21 引用 (Scopus)

High performance of InGaN LEDs on (111) silicon substrates grown by MOCVD

Egawa, T., Zhang, B. & Ishikawa, H., 2005 3 1, : : IEEE Electron Device Letters. 26, 3, p. 169-171 3 p.

研究成果: Article

70 引用 (Scopus)

High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

Shiojima, K., Makimura, T., Kosugi, T., Sugitani, S., Shigekawa, N., Ishikawa, H. & Egawa, T., 2004 6 10, : : Electronics Letters. 40, 12, p. 775-776 2 p.

研究成果: Article

20 引用 (Scopus)

High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates

Sakai, M., Asano, K., Arulkumaran, S., Ishikawa, H., Egawa, T., Jimbo, T., Shibata, T., Tanaka, M. & Oda, O., 2003 10, : : IEICE Transactions on Electronics. E86-C, 10, p. 2071-2076 6 p.

研究成果: Article

1 引用 (Scopus)

High-quality quaternary AlInGaN epilayers on sapphire

Liu, Y., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 11 1, : : Physica Status Solidi (A) Applied Research. 200, 1, p. 36-39 4 p.

研究成果: Article

13 引用 (Scopus)
3 引用 (Scopus)

High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates

Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2002 3 25, : : Applied Physics Letters. 80, 12, p. 2186-2188 3 p.

研究成果: Article

82 引用 (Scopus)

High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission

Liu, Y., Egawa, T., Ishikawa, H., Jiang, H., Zhang, B., Hao, M. & Jimbo, T., 2004 3 15, : : Journal of Crystal Growth. 264, 1-3, p. 159-164 6 p.

研究成果: Article

17 引用 (Scopus)

High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

Okita, H., Kaifu, K., Mita, J., Yamada, T., Sano, Y., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 11 1, : : Physica Status Solidi (A) Applied Research. 200, 1, p. 187-190 4 p.

研究成果: Article

19 引用 (Scopus)

Holding characteristics of planar objects suspended by near-field acoustic levitation

Matsuo, E., Koike, Y., Nakamura, K., Ueha, S. & Hashimoto, Y., 2000 3, : : Ultrasonics. 38, 1, p. 60-63 4 p.

研究成果: Article

51 引用 (Scopus)

Humidity reliability of commercial flash memories for long-term storage

Murota, T., Mimura, T., Gomasang, P., Yokogawa, S. & Ueno, K., 2020 7 1, : : Japanese Journal of Applied Physics. 59, SL, SLLC01.

研究成果: Article

公開

Hybrid transducer type ultrasonic linear motor using flexural vibrator

Kurosawa, M., Nishita, K., Koike, Y. & Ueha, S., 1991 1, : : Japanese Journal of Applied Physics. 30, p. 209-211 3 p.

研究成果: Article

16 引用 (Scopus)
3 引用 (Scopus)

Image correction method for the chemical imaging sensor

Miyamoto, K. I., Sugawara, Y., Kanoh, S., Yoshinobu, T., Wagner, T. & Schöning, M. J., 2010 2 17, : : Sensors and Actuators, B: Chemical. 144, 2, p. 344-348 5 p.

研究成果: Article

18 引用 (Scopus)

Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si

Ishikawa, H., Asano, K., Zhang, B., Egawa, T. & Jimbo, T., 2004 9 1, : : Physica Status Solidi (A) Applied Research. 201, 12, p. 2653-2657 5 p.

研究成果: Article

31 引用 (Scopus)

Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

Nakada, N., Nakaji, M., Ishikawa, H., Egawa, T., Umeno, M. & Jimbo, T., 2000 4 3, : : Applied Physics Letters. 76, 14, p. 1804-1806 3 p.

研究成果: Article

102 引用 (Scopus)

Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates

Arulkumaran, S., Sakai, M., Egawa, T., Ishikawa, H., Jimbo, T., Shibata, T., Asai, K., Sumiya, S., Kuraoka, Y., Tanaka, M. & Oda, O., 2002 8 5, : : Applied Physics Letters. 81, 6, p. 1131-1133 3 p.

研究成果: Article

60 引用 (Scopus)
10 引用 (Scopus)

Improvement of DC and RF characteristics of AlGaN/GaN high electron mobility transistors by thermally annealed Ni/Pt/Au schottky gate

Nanjo, T., Miura, N., Oishi, T., Suita, M., Abe, Y., Ozeki, T., Nakatsuka, S., Indue, A., Ishikawa, T., Matsuda, Y., Ishikawa, H. & Egawa, T., 2004 4, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 4 B, p. 1925-1929 5 p.

研究成果: Article

28 引用 (Scopus)
3 引用 (Scopus)

Improvement of multilayer graphene quality by current stress during thermal CVD

Razak, L. A., Tobino, D. & Ueno, K., 2014 5 25, : : Microelectronic Engineering. 120, p. 200-204 5 p.

研究成果: Article

11 引用 (Scopus)

Improving landmark detection accuracy for self-localization through baseboard recognition

Premachandra, C., Murakami, M., Gohara, R., Ninomiya, T. & Kato, K., 2017 12 1, : : International Journal of Machine Learning and Cybernetics. 8, 6, p. 1815-1826 12 p.

研究成果: Article

3 引用 (Scopus)
17 引用 (Scopus)

Infrared study on graded lattice quality in thin GaN crystals grown on sapphire

Kuroda, N., Kitayama, T., Nishi, Y., Saiki, K., Yokoi, H., Watanabe, J., Cho, M., Egawa, T. & Ishikawa, H., 2006 2 8, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 2 A, p. 646-650 5 p.

研究成果: Article

8 引用 (Scopus)

InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition

Egawa, T., Zhang, B., Nishikawa, N., Ishikawa, H., Jimbo, T. & Umeno, M., 2002 1 1, : : Journal of Applied Physics. 91, 1, p. 528-530 3 p.

研究成果: Article

63 引用 (Scopus)

InGaN Multiple-Quantum-Well Light Emitting Diodes on Si(111) Substrates

Zhang, B. J., Egawa, T., Ishikawa, H., Nishikawa, N., Jimbo, T. & Umeno, M., 2001 11 1, : : Physica Status Solidi (A) Applied Research. 188, 1, p. 151-154 4 p.

研究成果: Article

22 引用 (Scopus)
47 引用 (Scopus)