電子工学科

研究成果

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Article
2005
1 引用 (Scopus)
3 引用 (Scopus)

Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers

Nakazawa, S., Ueda, T., Inoue, K., Tanaka, T., Ishikawa, H. & Egawa, T., 2005 10 1, : : IEEE Transactions on Electron Devices. 52, 10, p. 2124-2128 5 p.

研究成果: Article

14 引用 (Scopus)
30 引用 (Scopus)

Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates

Arulkumaran, S., Egawa, T. & Ishikawa, H., 2005 10 1, : : Solid-State Electronics. 49, 10, p. 1632-1638 7 p.

研究成果: Article

36 引用 (Scopus)
22 引用 (Scopus)
50 引用 (Scopus)
32 引用 (Scopus)
33 引用 (Scopus)
5 引用 (Scopus)
6 引用 (Scopus)
2 引用 (Scopus)
8 引用 (Scopus)

Carrier-envelope-phase stabilized chirped-pulse amplification system scalable to higher pulse energies

Kakehata, M., Takada, H., Kobayashi, Y., Torizuka, K., Takamiya, H., Nishijima, K., Homma, T., Takahashi, H., Okubo, K., Nakamura, S. & Koyamada, Y., 2004 5, : : Optics Express. 12, 10, p. 2070-2080 11 p.

研究成果: Article

58 引用 (Scopus)
20 引用 (Scopus)

Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si

Ishikawa, H., Zhang, B., Asano, K., Egawa, T. & Jimbo, T., 2004 12 10, : : Journal of Crystal Growth. 272, 1-4 SPEC. ISS., p. 322-326 5 p.

研究成果: Article

20 引用 (Scopus)
3 引用 (Scopus)

Current collapse-free i-GaN/AlGaN/GaN high-electron-mobility transistors with and without surface passivation

Arulkumaran, S., Hibino, T., Egawa, T. & Ishikawa, H., 2004 12 6, : : Applied Physics Letters. 85, 23, p. 5745-5747 3 p.

研究成果: Article

20 引用 (Scopus)
22 引用 (Scopus)

Effects of Interfacial Thin Metal Layer for High-Performance Pt-Au-Based Schottky Contacts to AlGaN-GaN

Miura, N., Oishi, T., Nanjo, T., Suita, M., Abe, Y., Ozeki, T., Ishikawa, H. & Egawa, T., 2004 3 1, : : IEEE Transactions on Electron Devices. 51, 3, p. 297-303 7 p.

研究成果: Article

28 引用 (Scopus)

Effects of RTA cover material on the properties of GaNAs/GaAs triple quantum wells grown by chemical beam epitaxy

Sun, Y., Yamamori, M., Egawa, T., Ishikawa, H. & Mito, K., 2004 9 1, : : Journal of Crystal Growth. 269, 2-4, p. 229-234 6 p.

研究成果: Article

2 引用 (Scopus)
1 引用 (Scopus)

Fabrication of semiconductor laser for integration with optical isolator

Sakurai, K., Yokoi, H., Mizumoto, T., Miyashita, D. & Nakano, Y., 2004 4, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 4 A, p. 1388-1392 5 p.

研究成果: Article

2 引用 (Scopus)
11 引用 (Scopus)
1 引用 (Scopus)

High-electron-mobility AlGaN/AIN/GaN heterostructures grown on 100-mm-diam epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy

Miyoshi, M., Ishikawa, H., Egawa, T., Asai, K., Mouri, M., Shibata, T., Tanaka, M. & Oda, O., 2004 9 6, : : Applied Physics Letters. 85, 10, p. 1710-1712 3 p.

研究成果: Article

87 引用 (Scopus)

High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

Shiojima, K., Makimura, T., Kosugi, T., Sugitani, S., Shigekawa, N., Ishikawa, H. & Egawa, T., 2004 6 10, : : Electronics Letters. 40, 12, p. 775-776 2 p.

研究成果: Article

20 引用 (Scopus)

High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission

Liu, Y., Egawa, T., Ishikawa, H., Jiang, H., Zhang, B., Hao, M. & Jimbo, T., 2004 3 15, : : Journal of Crystal Growth. 264, 1-3, p. 159-164 6 p.

研究成果: Article

17 引用 (Scopus)

Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si

Ishikawa, H., Asano, K., Zhang, B., Egawa, T. & Jimbo, T., 2004 9 1, : : Physica Status Solidi (A) Applied Research. 201, 12, p. 2653-2657 5 p.

研究成果: Article

31 引用 (Scopus)

Improvement of DC and RF characteristics of AlGaN/GaN high electron mobility transistors by thermally annealed Ni/Pt/Au schottky gate

Nanjo, T., Miura, N., Oishi, T., Suita, M., Abe, Y., Ozeki, T., Nakatsuka, S., Indue, A., Ishikawa, T., Matsuda, Y., Ishikawa, H. & Egawa, T., 2004 4, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 4 B, p. 1925-1929 5 p.

研究成果: Article

28 引用 (Scopus)
17 引用 (Scopus)

Interferometric optical isolator employing a nonreciprocal phase shift operated in a unidirectional magnetic field

Yokoi, H., Shoji, Y., Shin, E. & Mizumoto, T., 2004 8 20, : : Applied Optics. 43, 24, p. 4745-4752 8 p.

研究成果: Article

12 引用 (Scopus)
3 引用 (Scopus)

MOVPE growth and characterization of high-Al-content AlGaN/GaN heterostructures on 100-mm-diameter sapphire substrates

Miyoshi, M., Sakai, M., Ishikawa, H., Egawa, T., Jimbo, T., Tanaka, M. & Oda, O., 2004 12 10, : : Journal of Crystal Growth. 272, 1-4 SPEC. ISS., p. 293-299 7 p.

研究成果: Article

23 引用 (Scopus)

Near-ideal Schottky contact on quaternary AlInGaN epilayer lattice-matched with GaN

Liu, Y., Egawa, T., Jiang, H., Zhang, B., Ishikawa, H. & Hao, M., 2004 12 13, : : Applied Physics Letters. 85, 24, p. 6030-6032 3 p.

研究成果: Article

12 引用 (Scopus)

New inductively coupled plasma system using divided antenna for photoresist ashing

Terai, F., Kobayashi, H., Iyanagi, K., Yamage, M., Nagatomo, T. & Homma, T., 2004 9 1, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 9 A, p. 6392-6398 7 p.

研究成果: Article

3 引用 (Scopus)

Optical and color stabilities of paint-on resins for shade modification of restorative resins

Arikawa, H., Kanie, T., Fujii, K., Ban, S., Homma, T. & Takahashi, H., 2004 6, : : Dental Materials Journal. 23, 2, p. 155-160 6 p.

研究成果: Article

公開
19 引用 (Scopus)

Organic plasma process for simple and substrate-independent surface modification of polymeric BioMEMS devices

Hiratsuka, A., Muguruma, H., Lee, K. H. & Karube, I., 2004 7 15, : : Biosensors and Bioelectronics. 19, 12, p. 1667-1672 6 p.

研究成果: Article

45 引用 (Scopus)

Plasma-polymerized thin film for biosensors of a new generation

Muguruma, H. & Hiratsuka, A., 2004 5 1, : : Bunseki Kagaku. 53, 5, p. 393-409 17 p.

研究成果: Article

1 引用 (Scopus)
8 引用 (Scopus)

Route to design electric fields of optical pulses: A combination of a pulse shaper and a carrier-envelope-phase stabilized chirped-pulse amplifier system

Kakehata, M., Takada, H., Kobayashi, Y., Torizuka, K., Nishijima, K., Takamiya, H., Homma, T. & Takahashi, H., 2004 12 1, : : Springer Series in Chemical Physics. 79, p. 88-90 3 p.

研究成果: Article

1 引用 (Scopus)

Sequential grouping of tone sequence as reflected by the mismatch negativity

Kanoh, S., Futami, R. & Hoshimiya, N., 2004 12 1, : : Biological Cybernetics. 91, 6, p. 388-395 8 p.

研究成果: Article

8 引用 (Scopus)

Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

Arulkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T. & Sano, Y., 2004 1 26, : : Applied Physics Letters. 84, 4, p. 613-615 3 p.

研究成果: Article

161 引用 (Scopus)

Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal

Miura, N., Nanjo, T., Suita, M., Oishi, T., Abe, Y., Ozeki, T., Ishikawa, H., Egawa, T. & Jimbo, T., 2004 5 1, : : Solid-State Electronics. 48, 5, p. 689-695 7 p.

研究成果: Article

140 引用 (Scopus)

Thermal stability of InGaN multiple-quantum-well light-emitting diodes on an AIN/sapphire template

Zhang, B., Egawa, T., Ishikawa, H., Liu, Y. & Jimbo, T., 2004 3 15, : : Journal of Applied Physics. 95, 6, p. 3170-3174 5 p.

研究成果: Article

31 引用 (Scopus)
13 引用 (Scopus)
19 引用 (Scopus)

Zn ion implantation along the c axis for formation of highly resistive GaN layers

Oishi, T., Miura, N., Suita, M., Nanjo, T., Abe, Y., Ozeki, T., Ishikawa, H. & Egawa, T., 2004 1 1, : : Shinku/Journal of the Vacuum Society of Japan. 47, 4, p. 328-333 6 p.

研究成果: Article

公開