電子工学科

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Article
2003

Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells

Hao, M., Ishikawa, H., Egawa, T., Shao, C. L. & Jimbo, T., 2003 6 30, : : Applied Physics Letters. 82, 26, p. 4702-4704 3 p.

研究成果: Article

39 引用 (Scopus)

Characterization of chemically-deposited NiB and NiWB thin films as a capping layer for ULSI application

Osaka, T., Takano, N., Kurokawa, T., Kaneko, T. & Ueno, K., 2003 6 2, : : Surface and Coatings Technology. 169-170, p. 124-127 4 p.

研究成果: Article

52 引用 (Scopus)
85 引用 (Scopus)
9 引用 (Scopus)
7 引用 (Scopus)

Electrical characteristics of AlGaN/GaN HEMTs on 4-in diameter sapphire substrate

Arulkumaran, S., Miyoshi, M., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 8 1, : : IEEE Electron Device Letters. 24, 8, p. 497-499 3 p.

研究成果: Article

20 引用 (Scopus)

Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire

Liu, Y., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 12 1, : : Journal of Crystal Growth. 259, 3, p. 245-251 7 p.

研究成果: Article

31 引用 (Scopus)

Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE

Miyoshi, M., Sakai, M., Ishikawa, H., Egawa, T., Jimbo, T., Tanaka, M. & Oda, O., 2003 10, : : IEICE Transactions on Electronics. E86-C, 10, p. 2077-2081 5 p.

研究成果: Article

4 引用 (Scopus)

Highly resistive GaN layers formed by ion implantation of Zn along the c axis

Oishi, T., Miura, N., Suita, M., Nanjo, T., Abe, Y., Ozeki, T., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 8 1, : : Journal of Applied Physics. 94, 3, p. 1662-1666 5 p.

研究成果: Article

41 引用 (Scopus)

High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates

Sakai, M., Asano, K., Arulkumaran, S., Ishikawa, H., Egawa, T., Jimbo, T., Shibata, T., Tanaka, M. & Oda, O., 2003 10, : : IEICE Transactions on Electronics. E86-C, 10, p. 2071-2076 6 p.

研究成果: Article

1 引用 (Scopus)

High-quality quaternary AlInGaN epilayers on sapphire

Liu, Y., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 11 1, : : Physica Status Solidi (A) Applied Research. 200, 1, p. 36-39 4 p.

研究成果: Article

13 引用 (Scopus)

High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

Okita, H., Kaifu, K., Mita, J., Yamada, T., Sano, Y., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 11 1, : : Physica Status Solidi (A) Applied Research. 200, 1, p. 187-190 4 p.

研究成果: Article

19 引用 (Scopus)

Linearity performance comparison of cascode current source and single-device current source IDPs; analyses, simulations and measurements

Hadidi, K., Morimoto, M., Futami, K., Oue, T., Ito, M., Sasaki, M., Khoei, A. & Matsumoto, T., 2003 5 1, : : International Journal of Electronics. 90, 5, p. 341-353 13 p.

研究成果: Article

Low dark current GaN Schottky UV photodiodes using oxidised IrNi Schottky contact

Jiang, H., Egawa, T., Ishikawa, H., Dou, Y. B., Shao, C. L. & Jimbo, T., 2003 11 22, : : Electronics Letters. 39, 22, p. 1604-1606 3 p.

研究成果: Article

7 引用 (Scopus)

Low Noise and Low Distortion Performances of an AlGaN/GaN HFET

Hirose, Y., Ikeda, Y., Ishii, M., Murata, T., Inoue, K., Tanaka, T., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 10, : : IEICE Transactions on Electronics. E86-C, 10, p. 2058-2064 7 p.

研究成果: Article

14 引用 (Scopus)

Optical nonreciprocal devices with a silicon guiding layer fabricated by wafer bonding

Yokoi, H., Mizumoto, T. & Shoji, Y., 2003 11 20, : : Applied Optics. 42, 33, p. 6605-6612 8 p.

研究成果: Article

65 引用 (Scopus)

Optical properties of paint-on resins for shade modification of crown and bridge resins - Light transmittance characteristics

Arikawa, H., Kanie, T., Fujii, K., Homma, T., Takahashi, H. & Ban, S., 2003 9, : : Dental Materials Journal. 22, 3, p. 272-279 8 p.

研究成果: Article

公開
13 引用 (Scopus)
2 引用 (Scopus)
4 引用 (Scopus)
2 引用 (Scopus)

Temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors

Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 5 5, : : Applied Physics Letters. 82, 18, p. 3110-3112 3 p.

研究成果: Article

63 引用 (Scopus)
21 引用 (Scopus)

Vapor polymerization deposition of polyimide thin films having oligothiophene segments in the main chain

Muguruma, H., Matsumura, K. & Hotta, S., 2003 5 1, : : Materials Letters. 57, 18, p. 2688-2692 5 p.

研究成果: Article

4 引用 (Scopus)
2002

A low-noise low-IF 0.18μm CMOS receiver IC with an active on-chip channel-selection filter for 5GHz wireless applications

Yano, H., Hori, S., Maeda, T., Matsuno, N., Numata, K., Fujii, M., Yoshida, N., Takahashi, Y. & Hida, H., 2002 10, : : NEC Research and Development. 43, 4, p. 314-319 6 p.

研究成果: Article

An estimation of vibration intensity from the measured vibration locus at one point

Kawai, H., Koike, Y., Nakamura, K. & Ueha, S., 2002 9 1, : : Acoustical Science and Technology. 23, 5, p. 252-257 6 p.

研究成果: Article

2 引用 (Scopus)
7 引用 (Scopus)
51 引用 (Scopus)
35 引用 (Scopus)
55 引用 (Scopus)

Elimination of a back-reflected TE mode in a TM-mode optical isolator with a Mach-Zehnder interferometer

Yokoi, H., Mizumoto, T., Kuroda, S., Ohtsuka, T. & Nakano, Y., 2002 11 20, : : Applied Optics. 41, 33, p. 7045-7051 7 p.

研究成果: Article

3 引用 (Scopus)

Fabrication of electroless NiReP barrier layer on SiO2 without sputtered seed layer

Osaka, T., Takano, N., Kurokawa, T. & Ueno, K., 2002 1 1, : : Electrochemical and Solid-State Letters. 5, 1, p. C7-C10

研究成果: Article

45 引用 (Scopus)

GaN metal-semiconductor-metal UV photodetector with recessed electrodes

Jiang, H., Okui, A., Ishikawa, H., Shao, C. L., Egawa, T. & Jimbo, T., 2002 1 15, : : Japanese Journal of Applied Physics, Part 2: Letters. 41, 1 A/B, p. L34-L36

研究成果: Article

5 引用 (Scopus)

Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

Sakai, M., Ishikawa, H., Egawa, T., Jimbo, T., Umeno, M., Shibata, T., Asai, K., Sumiya, S., Kuraoka, Y., Tanaka, M. & Oda, O., 2002 9 1, : : Journal of Crystal Growth. 244, 1, p. 6-11 6 p.

研究成果: Article

50 引用 (Scopus)

High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates

Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2002 3 25, : : Applied Physics Letters. 80, 12, p. 2186-2188 3 p.

研究成果: Article

80 引用 (Scopus)
3 引用 (Scopus)

Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates

Arulkumaran, S., Sakai, M., Egawa, T., Ishikawa, H., Jimbo, T., Shibata, T., Asai, K., Sumiya, S., Kuraoka, Y., Tanaka, M. & Oda, O., 2002 8 5, : : Applied Physics Letters. 81, 6, p. 1131-1133 3 p.

研究成果: Article

59 引用 (Scopus)

InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition

Egawa, T., Zhang, B., Nishikawa, N., Ishikawa, H., Jimbo, T. & Umeno, M., 2002 1 1, : : Journal of Applied Physics. 91, 1, p. 528-530 3 p.

研究成果: Article

63 引用 (Scopus)

MALC, a novel microinjection method for loading of macromolecules into cultured neurons

Yano, R., Okada, D., Yap, C. C., Mabuchi, K., Muguruma, H. & Saito, T. K., 2002 7 19, : : NeuroReport. 13, 10, p. 1263-1266 4 p.

研究成果: Article

6 引用 (Scopus)

Measurements of carrier-envelope phase changes of 100-Hz amplified laser pulses

Kakehata, M., Fujihira, Y., Takada, H., Kobayashi, Y., Torizuka, K., Homma, T. & Takahashi, H., 2002 6 1, : : Applied Physics B: Lasers and Optics. 74, SUPPL., p. S43-S50

研究成果: Article

40 引用 (Scopus)

Mechanical Properties of Light-cured Composite Resins Cured through Filters that Simulate Enamel

Arikawa, H., Kanie, T., Fujii, K., Fukui, K. & Homma, T., 2002 6, : : Dental Materials Journal. 21, 2, p. 147-155 9 p.

研究成果: Article

公開
10 引用 (Scopus)

MOCVD growth of high reflective GaN/AlGaN distributed Bragg reflectors

Nakada, N., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2002 4, : : Journal of Crystal Growth. 237-239, 1 4 II, p. 961-967 7 p.

研究成果: Article

21 引用 (Scopus)
4 引用 (Scopus)

Nonreciprocal TE-TM mode converter with semiconductor guiding layer

Yokoi, H., Mizumoto, T. & Iwasaki, H., 2002 12 5, : : Electronics Letters. 38, 25, p. 1670-1672 3 p.

研究成果: Article

11 引用 (Scopus)

Photodynamic assistance increases the efficiency of the process of microinjection in animal cells

Saito, T. K., Muguruma, H. & Mabuchi, K., 2002 3 9, : : Biotechnology Letters. 24, 4, p. 309-314 6 p.

研究成果: Article

14 引用 (Scopus)
2001
6 引用 (Scopus)
3 引用 (Scopus)

Back-illuminated GaN metal-semiconductor-metal UV photodetector with high internal gain

Jiang, H., Nakata, N., Zhao, G. Y., Ishikawa, H., Shao, C. L., Egawa, T., Jimbo, T. & Umeno, M., 2001 5 15, : : Japanese Journal of Applied Physics, Part 2: Letters. 40, 5 B, p. L505-L507

研究成果: Article

37 引用 (Scopus)

Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire

Egawa, T., Zhao, G. Y., Ishikawa, H., Umeno, M. & Jimbo, T., 2001 3 1, : : IEEE Transactions on Electron Devices. 48, 3, p. 603-608 6 p.

研究成果: Article

67 引用 (Scopus)

Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement

Jiang, H., Zhao, G. Y., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2001 1 15, : : Journal of Applied Physics. 89, 2, p. 1046-1052 7 p.

研究成果: Article

53 引用 (Scopus)