電子情報システム学科

研究成果

1976

DIPOLE EXCITATION OF ION WAVES.

Ohnuma, T., Iwasaki, H. & Adachi, S., 1976 11, : : IEEE Transactions on Antennas and Propagation. AP-24, 6, p. 901-902 2 p.

研究成果: Article

2 引用 (Scopus)
1980

Effects of a Ramped AC Voltage on the Characteristics of WO3 EC Cells

K.Horio, K. H., Y.Adachi, Y. A., T.Ikoma, T. I. & Horio, K., 1980 2 1, : : Japanese Journal of Applied Physics. Vol.19, p. 117-118

研究成果: Article

1984

EFFECTS OF IMPURITY COMPENSATION ON I-V CHARACTERISTICS OF N-I-N STRUCTURES AND BACKGATING IN GAAS INTEGRATED CIRCUITS.

Horio, K., Ikoma, T. & Yanai, H., 1984, Unknown Host Publication Title. Look, D. C. & Blakemore, J. S. (版). Shiva Publ Ltd, Nantwich, Engl Also, p. 354-363 10 p.

研究成果: Conference contribution

2 引用 (Scopus)
1986

COMPUTER-AIDED ANALYSIS OF GaAs N-I-N STRUCTURES WITH A HEAVILY COMPENSATED I-LAYER.

Horio, K., Yanai, H. & Ikoma, T., 1986 9, : : IEEE Transactions on Electron Devices. ED-33, 9, p. 1242-1250 9 p.

研究成果: Article

58 引用 (Scopus)
3 引用 (Scopus)
1987

Numerical modeling of energy transport effects in AlGaAs/GaAs heterojunction bipolar transistors.

Horio, K. & Yanai, H., 1987, NASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit. Miller, J. J. H. (版). Piscataway, NJ, United States: Publ by IEEE, p. 231-236 6 p.

研究成果: Conference contribution

4 引用 (Scopus)

Numerical simulation of GaAs MESFET's with heavily compensated substrates.

Horio, K., Yanai, H. & Ikoma, T., 1987, NASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit. Miller, J. J. H. (版). Piscataway, NJ, United States: Publ by IEEE, p. 237-242 6 p.

研究成果: Conference contribution

1 引用 (Scopus)
1988
57 引用 (Scopus)
1989
1 引用 (Scopus)
2 引用 (Scopus)
30 引用 (Scopus)
1990
125 引用 (Scopus)

Study on collector design of AlGaAs/GaAs heterojunction bipolar transistors by two-dimensional simulation

Horio, K., Iwatsu, Y., Oguchi, A. & Yanai, H., 1990, Proc 90 Bipolar Circ Technol Meet. Piscataway, NJ, United States: Publ by IEEE, p. 195-198 4 p.

研究成果: Conference contribution

3 引用 (Scopus)
1991

Effects of junctions on conduction properties of GaAs n-i-n structures including deep levels

Horio, K. & Yanai, H., 1991 12, COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering. 4 版 巻 10. p. 563-572 10 p.

研究成果: Chapter

8 引用 (Scopus)
3 引用 (Scopus)
31 引用 (Scopus)
1992
2 引用 (Scopus)
2 引用 (Scopus)

Simulations of trapping effects in GaAs MESFETs and requirements for substrates in MESFET-ICs

Horio, K. & Fuseya, Y., 1992 1 1, GaAs IC Symposium Technical Digest 1992. Institute of Electrical and Electronics Engineers Inc., p. 241-244 4 p. 247266. (GaAs IC Symposium Technical Digest 1992).

研究成果: Conference contribution

2 引用 (Scopus)

Critique of Nihonjinron

Darrell, M., 1993 2 1, : : Default journal.

研究成果: Article

Simulation of kink behaviour in GaAs MESFET with semi-insulating substrate

Horio, K. & śatoh, K., 1993 1 1, : : Electronics Letters. 29, 12, p. 1128-1130 3 p.

研究成果: Article

4 引用 (Scopus)

Two-dimensional simulations of cutoff frequency characteristics for AlGaAs/GaAs HBTs with planar structures

Horio, K. & Nakatani, A., 1993 12, COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering. Miller, J. J. H. (版). 4 版 巻 12. p. 331-340 10 p.

研究成果: Chapter

1994

A pitch synchronous innovation celp (PSI-CELP) coder for 2-4 kbit/s

Miki, S., Mano, K., Moriya, T., Oguchi, K. & Ohmuro, H., 1994 1 1, : : ICASSP, IEEE International Conference on Acoustics, Speech and Signal Processing - Proceedings. 2, p. II113-II116 389705.

研究成果: Conference article

6 引用 (Scopus)
2 引用 (Scopus)
2 引用 (Scopus)

Synthesis of variable wave digital filters

Watanabe, E., Ito, M., Murakoshi, N. & Nishihara, A., 1994 1, : : IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences. E77-A, 1, p. 263-271 9 p.

研究成果: Article

7 引用 (Scopus)
31 引用 (Scopus)
40 引用 (Scopus)
1995
4 引用 (Scopus)

Analysis of kink-related backgating effect in GaAs MESFET

Horio, K. & Usami, K., 1995 6, : : IEEE Electron Device Letters. 16, 6, p. 277-279 3 p.

研究成果: Article

5 引用 (Scopus)

Physical mechanism of performance instabilities such as kink phenomena and related backgating effect in GaAs MESFETs

Horio, K., Usami, K. & Satoh, K., 1995, Annual Proceedings - Reliability Physics (Symposium). IEEE, p. 212-216 5 p.

研究成果: Conference contribution

2 引用 (Scopus)

Two-dimensional simulation of kink-related backgating effect in GaAs MESFET's

Horio, K. & Usami, K., 1995, IEEE Region 10 Annual International Conference, Proceedings/TENCON. Piscataway, NJ, United States: IEEE, p. 115-118 4 p.

研究成果: Conference contribution

1996

2-D simulation of kink-related sidegating effects in GaAs MESFETs

Usami, K. & Horio, K., 1996 12, : : Solid-State Electronics. 39, 12, p. 1737-1745 9 p.

研究成果: Article

1 引用 (Scopus)
1 引用 (Scopus)

Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs

Horio, K. & Yamada, T., 1996, Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Anon (版). Piscataway, NJ, United States: IEEE, p. 175-178 4 p.

研究成果: Conference contribution

2 引用 (Scopus)

EFfects of semi-insulating substrate on kink phenomena in GaAs MESFETs

Horio, K. & Satoh, K., 1996, IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. Anon (版). Piscataway, NJ, United States: IEEE, p. 353-356 4 p.

研究成果: Conference contribution

2 引用 (Scopus)
1997

Analysis of surface and substrate deep-trap effects on gate-lag phenomena in GaAs MESFETs

Horio, K., Yamada, T. & Wakabayashi, A., 1997, GaAs Reliability Workshop, Proceedings. Piscataway, NJ, United States: IEEE, p. 101-103 3 p.

研究成果: Conference contribution

1 引用 (Scopus)
10 引用 (Scopus)