電子情報システム学科

研究成果 1976 2019

1995
4 引用 (Scopus)
Heterojunction bipolar transistors
Cutoff frequency
accumulators
aluminum gallium arsenides
Time delay
5 引用 (Scopus)

Analysis of kink-related backgating effect in GaAs MESFET

Horio, K. & Usami, K., 1995 6, : : IEEE Electron Device Letters. 16, 6, p. 277-279 3 p.

研究成果: Article

Impact ionization
Substrates
Experiments
gallium arsenide
2 引用 (Scopus)

Physical mechanism of performance instabilities such as kink phenomena and related backgating effect in GaAs MESFETs

Horio, K., Usami, K. & Satoh, K., 1995, Annual Proceedings - Reliability Physics (Symposium). IEEE, p. 212-216 5 p.

研究成果: Conference contribution

Impact ionization
Substrates

Two-dimensional simulation of kink-related backgating effect in GaAs MESFET's

Horio, K. & Usami, K., 1995, IEEE Region 10 Annual International Conference, Proceedings/TENCON. Piscataway, NJ, United States: IEEE, p. 115-118 4 p.

研究成果: Conference contribution

Impact ionization
Substrates
Experiments
1994
Heterojunction bipolar transistors
Doping (additives)
Electrons
Electron mobility
Cutoff frequency
2 引用 (Scopus)
Digital filters
Transfer functions
Polynomials
IIR filters
Deterioration
2 引用 (Scopus)
IIR filters
Digital filters
Networks (circuits)
7 引用 (Scopus)

Synthesis of variable wave digital filters

Watanabe, E., Ito, M., Murakoshi, N. & Nishihara, A., 1994 1, : : IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences. E77-A, 1, p. 263-271 9 p.

研究成果: Article

Digital filters
Cutoff frequency
Taylor series
31 引用 (Scopus)
dimensional analysis
field effect transistors
Substrates
Impact ionization
ionization
40 引用 (Scopus)
Drain current
field effect transistors
quasi-steady states
Substrates
Buffer layers

Critique of Nihonjinron

Darrell, M., 1993 2 1, : : Default journal.

研究成果: Article

Interpolation
Sampling
Table lookup
Digital signal processing
Feedback
4 引用 (Scopus)

Simulation of kink behaviour in GaAs MESFET with semi-insulating substrate

Horio, K. & śatoh, K., 1993 1 1, : : Electronics Letters. 29, 12, p. 1128-1130 3 p.

研究成果: Article

Impact ionization
Hole traps
Charge distribution
Substrates
Electric space charge
Digital filters
Networks (circuits)
Transfer functions
IIR filters
Computational complexity
Cutoff frequency
Substrates
Buffer layers
Doping (additives)
Impurities

Two-dimensional simulations of cutoff frequency characteristics for AlGaAs/GaAs HBTs with planar structures

Horio, K. & Nakatani, A., 1993 12, COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering. Miller, J. J. H. (版). 4 版 巻 12. p. 331-340 10 p.

研究成果: Chapter

Heterojunction bipolar transistors
Cutoff frequency
1992
2 引用 (Scopus)
Hole traps
Impact ionization
Electric potential
Computer simulation
gallium arsenide
2 引用 (Scopus)
Drain current
Computer simulation

Simulations of trapping effects in GaAs MESFETs and requirements for substrates in MESFET-ICs

Horio, K. & Fuseya, Y., 1992 1 1, GaAs IC Symposium Technical Digest 1992. Institute of Electrical and Electronics Engineers Inc., p. 241-244 4 p. 247266. (GaAs IC Symposium Technical Digest 1992).

研究成果: Conference contribution

Drain current
Buffer layers
field effect transistors
trapping
requirements
2 引用 (Scopus)
Digital filters
Factorization
Transfer functions
Scattering
Cascade connections
1991

Effects of junctions on conduction properties of GaAs n-i-n structures including deep levels

Horio, K. & Yanai, H., 1991 12, COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering. 4 版 巻 10. p. 563-572 10 p.

研究成果: Chapter

Impact ionization
8 引用 (Scopus)
Substrates
Buffer layers
Hole traps
Drain current
Cutoff frequency
3 引用 (Scopus)
dimensional analysis
Heterojunction bipolar transistors
Cutoff frequency
accumulators
aluminum gallium arsenides
31 引用 (Scopus)
field effect transistors
Substrates
simulation
Chromium
Current voltage characteristics
1990
124 引用 (Scopus)
Thermionic emission
Heterojunctions
Fermi level
Numerical models
Boundary conditions
3 引用 (Scopus)

Study on collector design of AlGaAs/GaAs heterojunction bipolar transistors by two-dimensional simulation

Horio, K., Iwatsu, Y., Oguchi, A. & Yanai, H., 1990, Proc 90 Bipolar Circ Technol Meet. Piscataway, NJ, United States: Publ by IEEE, p. 195-198 4 p.

研究成果: Conference contribution

Heterojunction bipolar transistors
Cutoff frequency
Doping (additives)
1989
1 引用 (Scopus)
Heterojunction bipolar transistors
Relaxation time
Cutoff frequency
Computer simulation
2 引用 (Scopus)
Buffer layers
Numerical analysis
Substrates
Impurities
Compensation and Redress
30 引用 (Scopus)
Heterojunction bipolar transistors
bipolar transistors
accumulators
aluminum gallium arsenides
heterojunctions
1988
57 引用 (Scopus)
field effect transistors
traps
Computer simulation
Substrates
simulation
1987
4 引用 (Scopus)

Numerical modeling of energy transport effects in AlGaAs/GaAs heterojunction bipolar transistors.

Horio, K. & Yanai, H., 1987, NASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit. Miller, J. J. H. (版). Piscataway, NJ, United States: Publ by IEEE, p. 231-236 6 p.

研究成果: Conference contribution

Heterojunction bipolar transistors
Electrons
Boltzmann equation
Cutoff frequency
Numerical models
1 引用 (Scopus)

Numerical simulation of GaAs MESFET's with heavily compensated substrates.

Horio, K., Yanai, H. & Ikoma, T., 1987, NASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit. Miller, J. J. H. (版). Piscataway, NJ, United States: Publ by IEEE, p. 237-242 6 p.

研究成果: Conference contribution

Computer simulation
MESFET devices
Substrates
Impurities
Drain current
1986
58 引用 (Scopus)

COMPUTER-AIDED ANALYSIS OF GaAs N-I-N STRUCTURES WITH A HEAVILY COMPENSATED I-LAYER.

Horio, K., Yanai, H. & Ikoma, T., 1986 9, : : IEEE Transactions on Electron Devices. ED-33, 9, p. 1242-1250 9 p.

研究成果: Article

Charge distribution
Electric potential
Current voltage characteristics
Electric space charge
Analytical models
3 引用 (Scopus)
Boltzmann equation
Heterojunction bipolar transistors
Numerical analysis
Numerical models
Hydrodynamics
1984
2 引用 (Scopus)

EFFECTS OF IMPURITY COMPENSATION ON I-V CHARACTERISTICS OF N-I-N STRUCTURES AND BACKGATING IN GAAS INTEGRATED CIRCUITS.

Horio, K., Ikoma, T. & Yanai, H., 1984, Unknown Host Publication Title. Look, D. C. & Blakemore, J. S. (版). Shiva Publ Ltd, Nantwich, Engl Also, p. 354-363 10 p.

研究成果: Conference contribution

Integrated circuits
Impurities
Electric potential
Analytical models
Compensation and Redress
1980

Effects of a Ramped AC Voltage on the Characteristics of WO3 EC Cells

K.Horio, K. H., Y.Adachi, Y. A., T.Ikoma, T. I. & Horio, K., 1980 2 1, : : Japanese Journal of Applied Physics. Vol.19, p. 117-118

研究成果: Article

1976
2 引用 (Scopus)

DIPOLE EXCITATION OF ION WAVES.

Ohnuma, T., Iwasaki, H. & Adachi, S., 1976 11, : : IEEE Transactions on Antennas and Propagation. AP-24, 6, p. 901-902 2 p.

研究成果: Article

Ions