石川 博康

研究成果

年別の研究成果 1995 1998 2001 2003 2004 2018

• 156 Article
• 14 Conference article
• 6 Letter
• 3 Conference contribution
• 3 その他
  • 3 Paper

年別の研究成果

年別の研究成果

検索結果

• Schottky contacts of Ni/Au on n-GaN grown on sapphire and SiC substrates

  Zhang, B. J., Zhao, G. Y., Nishikawa, N., Adachi, M., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2000 12月 1, In: SiC及び関連ワイドバンドギャップ半導体研究会　第9回講演会予稿集. p. P88 (2008)-103

  研究成果: Article › 査読

• Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates

  Zhang, B. J., Egawa, T., Zhao, G. Y., Ishikawa, H., Umeno, M. & Jimbo, T., 2001 10月 15, In: Applied Physics Letters. 79, 16, p. 2567-2569 3 p.

  研究成果: Article › 査読

  • Schottky diodes 100%
  • sapphire 80%
  • electric potential 25%
  • electrical faults 23%
  • crystals 23%
  35 被引用数 (Scopus)

• Sidegating effect of GaN MESFETs grown on sapphire substrate

  Egawa, T., Ishikawa, H., Jimbo, T. & Umeno, M., 1998 3月 19, In: Electronics Letters. 34, 6, p. 598-600 3 p.

  研究成果: Article › 査読

  • MESFET devices 100%
  • Sapphire 81%
  • Electron mobility 48%
  • Carrier concentration 43%
  • Substrates 43%
  7 被引用数 (Scopus)

• Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional elctron transport porperties

  Miyoshi, M., Egawa, T. & Ishikawa, H., 2005, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23, 4, p. 1527-1531 5 p.

  研究成果: Article › 査読

  • Two dimensional electron gas 100%
  • Heterojunctions 74%
  • Metallorganic vapor phase epitaxy 40%
  • characterization 31%
  • Electron transport properties 22%
  39 被引用数 (Scopus)

• Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional electron transport properties

  Miyoshi, M., Egawa, T. & Ishikawa, H., 2005 8月 1, In: J. Vac. Sci. Technol. B,. Vol. 23, p. 1527-1531

  研究成果: Article › 査読

  39 被引用数 (Scopus)

• Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates

  Arulkumaran, S., Egawa, T. & Ishikawa, H., 2005 10月, In: Solid-State Electronics. 49, 10, p. 1632-1638 7 p.

  研究成果: Article › 査読

  • Drain Current 100%
  • Sapphire 86%
  • High electron mobility transistors 74%
  • high electron mobility transistors 66%
  • sapphire 55%
  40 被引用数 (Scopus)

• Studies of AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Silicon Carbide and Sapphire Substrates

  Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2001 9月 1, In: Default journal. p. C-1-2

  研究成果: Article › 査読

• Studies of electron beam evaporated SiO₂/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

  Arulkumaran, S., Egawa, T. & Ishikawa, H., 2005 6月 24, In: Japanese Journal of Applied Physics, Part 2: Letters. 44, 24-27, p. L812-L815

  研究成果: Article › 査読

  • Oxide semiconductors 100%
  • Electron beams 99%
  • High electron mobility transistors 97%
  • high electron mobility transistors 87%
  • metal oxide semiconductors 86%
  27 被引用数 (Scopus)

• Studies on electron beam evaporated ZrO ₂/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

  Balachander, K., Arulkumaran, S., Ishikawa, H., Baskar, K. & Egawa, T., 2005 1月 1, In: Physica Status Solidi (A) Applications and Materials Science. 202, 2, p. R16-R18

  研究成果: Article › 査読

  • Leakage Current 100%
  • Oxide semiconductors 90%
  • Electron beams 90%
  • High electron mobility transistors 87%
  • Electron Beam 82%
  58 被引用数 (Scopus)

• Studies on the influences of i-GaN, n-GaN, p-GaN and InGaN cap layers in AlGaN/GaN high-electron-mobility transistors

  Arulkumaran, S., Egawa, T. & Ishikawa, H., 2005 5月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 5 A, p. 2953-2960 8 p.

  研究成果: Article › 査読

  • High electron mobility transistors 100%
  • caps 91%
  • high electron mobility transistors 89%
  • Two dimensional electron gas 37%
  • Drain current 13%
  45 被引用数 (Scopus)

• Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer

  Miyoshi, M., Egawa, T. & Ishikawa, H., 2006 9月, In: Solid-State Electronics. 50, 9-10, p. 1515-1521 7 p.

  研究成果: Article › 査読

  • Metallorganic vapor phase epitaxy 100%
  • High electron mobility transistors 65%
  • high electron mobility transistors 58%
  • Two dimensional electron gas 49%
  • Metallorganic Chemical Vapour Deposition 45%
  22 被引用数 (Scopus)

• Suppression of crack generation in GaN/AlGaN distributed Bragg reflector on sapphire by the insertion of GaN/AlGaN superlattice grown by metal-organic chemical vapor deposition

  Nakada, N., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 2月 15, In: Japanese Journal of Applied Physics, Part 2: Letters. 42, 2 B, p. L144-L146

  研究成果: Letter › 査読

  • Distributed Bragg reflectors 100%
  • Organic chemicals 79%
  • Sapphire 68%
  • Chemical vapor deposition 60%
  • Bragg reflectors 57%
  35 被引用数 (Scopus)

• Suppression of GaInN/GaN multi-quantum-well decomposition during growth of light-emitting-diode structure

  Ishikawa, H., Nakada, N., Mori, M., Zhao, G. Y., Egawa, T., Jimbo, T. & Umeno, M., 2001 11月 1, In: Japanese Journal of Applied Physics, Part 2: Letters. 40, 11 A, p. L1170-L1172

  研究成果: Letter › 査読

  • Semiconductor quantum wells 100%
  • Light emitting diodes 63%
  • Photoluminescence 51%
  • light emitting diodes 50%
  • quantum wells 49%
  11 被引用数 (Scopus)

• Suppression of GaInN/GaN Multi- Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure

  Ishikawa, H., Nakada, N., Mori, M., Zhao, G. -Y., Egawa, T., Jimbo, T. & Umeno, M., 2001 11月 1, In: Jpn. J. Appl. Phys.. 40, p. L1170-L1172

  研究成果: Article › 査読

  11 被引用数 (Scopus)

• Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO₂, Si₃N₄, and silicon oxynitride

  Arulkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T. & Sano, Y., 2004 1月 26, In: Applied Physics Letters. 84, 4, p. 613-615 3 p.

  研究成果 › 査読

  • oxynitrides 100%
  • high electron mobility transistors 86%
  • passivity 77%
  • silicon 45%
  • electrical faults 16%
  201 被引用数 (Scopus)

• Surface potential and topography measurements of gallium nitride on sapphire by scanning probe microscopy

  Uruma, T., Satoh, N. & Ishikawa, H., 2016, In: IEEJ Transactions on Sensors and Micromachines. 136, 4, p. 96-101 6 p.

  研究成果: Article › 査読

  • Scanning probe microscopy 100%
  • Crystal defects 98%
  • Gallium nitride 85%
  • Surface potential 84%
  • Sapphire 82%
  1 被引用数 (Scopus)

• Temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors

  Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 5月 5, In: Applied Physics Letters. 82, 18, p. 3110-3112 3 p.

  研究成果: Article › 査読

  • high electron mobility transistors 100%
  • leakage 80%
  • temperature dependence 62%
  • temperature 21%
  • activation energy 17%
  78 被引用数 (Scopus)

• The infrared optical functions of AlxGa1-xN determined by reflectance spectroscopy

  Yu, G., Ishikawa, H., M.Umeno, M. U., Egawa, T., Watanabe, J., Soga, T. & Jimbo, T., 1998 9月 1, In: Appl. Phys. Lett.. 73, p. 1472-1474

  研究成果: Article › 査読

  47 被引用数 (Scopus)

• The infrared optical functions of Al_xGa_1-xN determined by reflectance spectroscopy

  Yu, G., Ishikawa, H., Umeno, M., Egawa, T., Watanabe, J., Soga, T. & Jimbo, T., 1998, In: Applied Physics Letters. 73, 11, p. 1472-1474 3 p.

  研究成果: Article › 査読

  • sapphire 100%
  • reflectance 82%
  • spectroscopy 61%
  • permittivity 20%
  • phonons 20%
  47 被引用数 (Scopus)

• Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal

  Miura, N., Nanjo, T., Suita, M., Oishi, T., Abe, Y., Ozeki, T., Ishikawa, H., Egawa, T. & Jimbo, T., 2004 5月 1, In: Solid-State Electronics. 48, 5, p. 689-695 7 p.

  研究成果: Article › 査読

  • Schottky Contact 100%
  • Electron Mobility 73%
  • High electron mobility transistors 71%
  • Work Function 71%
  • high electron mobility transistors 63%
  159 被引用数 (Scopus)

• Thermal stability of GaN on (111)Si substrate

  Ishikawa, H., Yamamoto, K., Egawa, T., Soga, T., Jimbo, T. & Umeno, M., 1998 6月 1, In: J. Crystal Growth. 189/190, p. 178-182

  研究成果: Article › 査読

  184 被引用数 (Scopus)

• Thermal stability of GaN on (1 1 1) Si substrate

  Ishikawa, H., Yamamoto, K., Egawa, T., Soga, T., Jimbo, T. & Umeno, M., 1998 6月 15, In: Journal of Crystal Growth. 189-190, p. 178-182 5 p.

  研究成果: Article › 査読

  • Thermodynamic stability 100%
  • thermal stability 84%
  • Annealing 76%
  • Substrates 68%
  • Thermal Stability 63%
  184 被引用数 (Scopus)

• Thermal stability of InGaN multiple-quantum-well light-emitting diodes on an AIN/sapphire template

  Zhang, B., Egawa, T., Ishikawa, H., Liu, Y. & Jimbo, T., 2004 3月 15, In: Journal of Applied Physics. 95, 6, p. 3170-3174 5 p.

  研究成果: Article › 査読

  • templates 100%
  • thermal stability 93%
  • sapphire 91%
  • light emitting diodes 85%
  • quantum wells 83%
  33 被引用数 (Scopus)

• Thermal stability of Pd/Al0.11Ga0.89N Schottky diodes

  Arulkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T. & Umeno, M., 2000 9月 1, In: Default journal. p. PTD-47

  研究成果: Article › 査読

• Thermo-optical nonlinearity of GaN grown by metalorganic chemical-vapor deposition

  Zhao, G. Y., Ishikawa, H., Yu, G., Egawa, T., Watanabe, J. & Soga, T., 1998 7月 1, In: Appl. Phys. Lett.. 73, p. 22-24

  研究成果: Article › 査読

  17 被引用数 (Scopus)

• Thermo-optical nonlinearity of GaN grown by metalorganic chemical- vapor deposition

  Zhao, G. Y., Ishikawa, H., Yu, G., Egawa, T., Watanabe, J., Soga, T., Jimbo, T. & Umeno, M., 1998 12月 1, In: Applied Physics Letters. 73, 1, p. 22-24 3 p.

  研究成果: Article › 査読

  • ellipsometry 100%
  • metalorganic chemical vapor deposition 97%
  • nonlinearity 77%
  • coefficients 55%
  • temperature 30%
  17 被引用数 (Scopus)

• Thin-film InGaN multiple-quantum-well light-emitting diodes transferred from Si (111) substrate onto copper carrier by selective lift-off

  Zhang, B., Egawa, T., Ishikawa, H., Liu, Y. & Jimbo, T., 2005 2月 14, In: Applied Physics Letters. 86, 7, p. 1-3 3 p., 071113.

  研究成果: Article › 査読

  • light emitting diodes 100%
  • quantum wells 96%
  • copper 89%
  • thin films 64%
  • metal bonding 28%
  39 被引用数 (Scopus)

• Three growth-temperature-dependent regions for nitrogen incorporation in GaNAs grown by chemical beam epitaxy

  Sun, Y., Yamamori, M., Egawa, T. & Ishikawa, H., 2004 5月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 5 A, p. 2409-2413 5 p.

  研究成果: Article › 査読

  • Chemical beam epitaxy 100%
  • Growth temperature 88%
  • epitaxy 54%
  • Nitrogen 50%
  • nitrogen 40%
  13 被引用数 (Scopus)

• Valence-Band Discontinuity at the AIN/Si Interface

  Ishikawa, H., Zhang, B., Egawa, T. & Jimbo, T., 2003 10月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 42, 10, p. 6413-6414 2 p.

  研究成果: Article › 査読

  • Valence bands 100%
  • discontinuity 49%
  • Conduction bands 47%
  • valence 40%
  • X ray photoelectron spectroscopy 33%
  22 被引用数 (Scopus)

• Valence Band Discontinuity at the AlN/Si Interface

  Ishikawa, H., Zhang, B., Egawa, T. & T.Jimbo, T. J., 2003 10月 1, In: Jpn. J. Appl. Phys.. 42, p. 6413-6414

  研究成果: Article › 査読

  22 被引用数 (Scopus)

• Visible-blind metal-semiconductor-metal photodetectors based on undoped AlGaN/GaN high electron mobility transistor structure

  Jiang, H., Egawa, T., Ishikawa, H., Shao, C. & Jimbo, T., 2004 5月 15, In: Japanese Journal of Applied Physics, Part 2: Letters. 43, 5 B, p. L683-L685

  研究成果: Article › 査読

  • Photodetectors 100%
  • High electron mobility transistors 89%
  • high electron mobility transistors 79%
  • photometers 68%
  • Semiconductor materials 68%
  22 被引用数 (Scopus)

• Zn ion implantation along the c axis for formation of highly resistive GaN layers

  Oishi, T., Miura, N., Suita, M., Nanjo, T., Abe, Y., Ozeki, T., Ishikawa, H. & Egawa, T., 2004, In: Shinku/Journal of the Vacuum Society of Japan. 47, 4, p. 328-333 6 p.

  研究成果: Article › 査読

  Open Access

  • Ion implantation 100%
  • Ion Implantation 90%
  • Ions 68%
  • ion implantation 67%
  • Energy transfer 42%