石川 博康

研究成果

年別の研究成果 1995 2018

• 5441 被引用数
• 40 h-index
• 156 Article
• 15 Conference article
• 6 Letter
• 3 Paper
• 2 その他
  • 2 Conference contribution

年別の研究成果

年別の研究成果

検索結果

• 2002

  High performance AlGaN/GaN HEMTs with recessed gate

  Sano, Y., Mita, J., Yamada, T., Makita, T., Kaifu, K., Ishikawa, H., Egawa, T. & Jimbo, T., 2002 1 1, Silicon Carbide and Related Materials 2001. Yoshida, S., Nishino, S., Harima, H. & Kimoto, T. (eds.). Trans Tech Publications Ltd, p. 1511-1514 4 p. (Materials Science Forum; vol. 389-393).

  研究成果: Conference contribution

  • aluminum gallium nitride
  • Gates (transistor)
  • High electron mobility transistors
  • high electron mobility transistors
  • performance
• 2004

  High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE

  Miyoshi, M., Imanishi, A., Ishikawa, H., Egawa, T., Asai, K., Mouri, M., Shibata, T., Tanaka, M. & Oda, O., 2004 12 1, IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary: Compounding Your Chips in Monterey - Technical Digest 2004. p. 193-196 4 p. (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).

  研究成果: Conference contribution

  • Metallorganic vapor phase epitaxy
  • Sapphire
  • High electron mobility transistors
  • Heterojunctions
  • Two dimensional electron gas
  3 被引用数 (Scopus)