年単位の研究成果
研究成果
2002
High performance AlGaN/GaN HEMTs with recessed gate
Sano, Y., Mita, J., Yamada, T., Makita, T., Kaifu, K., Ishikawa, H., Egawa, T. & Jimbo, T., 2002 1 1, Silicon Carbide and Related Materials 2001. Yoshida, S., Nishino, S., Harima, H. & Kimoto, T. (版). Trans Tech Publications Ltd, p. 1511-1514 4 p. (Materials Science Forum; 巻数 389-393).研究成果: Conference contribution
2004
High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE
Miyoshi, M., Imanishi, A., Ishikawa, H., Egawa, T., Asai, K., Mouri, M., Shibata, T., Tanaka, M. & Oda, O., 2004 12 1, IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary: Compounding Your Chips in Monterey - Technical Digest 2004. p. 193-196 4 p. (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).研究成果: Conference contribution
2
引用
（Scopus）