石川 博康

研究成果

年別の研究成果 1995 1998 2001 2003 2004 2018

• 156 Article
• 14 Conference article
• 6 Letter
• 3 Conference contribution
• 3 その他
  • 3 Paper

年別の研究成果

年別の研究成果

検索結果

• 2018

  Formation of coated phosphor layers by rotation-revolution for remote-phosphor LED bulbs and characterization of LED light bulb with super high color rendition

  Kondo, H. & Ishikawa, H., 2018 11月 1, In: IEEE Transactions on Components, Packaging and Manufacturing Technology. 8, 11, p. 2021-2029 9 p., 8408826.

  研究成果: Article › 査読

  • Phosphors 100%
  • Light emitting diodes 74%
  • Characterization (materials science) 66%
  • Color 54%
  • Coatings 11%

• Large-area profile transformation of inkjet-printed PD precursor films by slit-nozzle humidification and redrying for PdO nanofilm field emitters

  Kondo, H., Sato, T. & Ishikawa, H., 2018 7月, In: Journal of Imaging Science and Technology. 62, 4, 40501.

  研究成果: Article › 査読

  • Nanofilm 100%
  • Nozzle 97%
  • nozzles 77%
  • slits 77%
  • Nozzles 72%
• 2017

  Novel inkjet printing system and formation mechanism of PdO nanofilms for field-emission imaging devices

  Kondo, H., Sato, T., Yamabe, J. & Ishikawa, H., 2017 7月 21, In: Journal of Physics D: Applied Physics. 50, 32, 325106.

  研究成果: Article › 査読

  • Field emission 100%
  • Nanofilm 93%
  • Field Emission 78%
  • printing 76%
  • Printing 75%
  1 被引用数 (Scopus)
• 2016

  Surface potential and topography measurements of gallium nitride on sapphire by scanning probe microscopy

  Uruma, T., Satoh, N. & Ishikawa, H., 2016, In: IEEJ Transactions on Sensors and Micromachines. 136, 4, p. 96-101 6 p.

  研究成果: Article › 査読

  • Scanning probe microscopy 100%
  • Crystal defects 98%
  • Gallium nitride 85%
  • Surface potential 84%
  • Sapphire 82%
  1 被引用数 (Scopus)
• 2011

  Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates

  Ishikawa, H. & Shimanaka, K., 2011 1月 15, In: Journal of Crystal Growth. 315, 1, p. 196-199 4 p.

  研究成果: Article › 査読

  • Threading Dislocation 100%
  • Substrates 37%
  • Cathodoluminescence 33%
  • Metallorganic chemical vapor deposition 27%
  • Liquid Film 25%
  8 被引用数 (Scopus)
• 2010

  PL and structural studies of GaInN MQWs grown on Si substrates

  Ishikawa, H. & Mori, N., 2010 5月 21, In: The 8th International Symposium on Semiconductor Light Emitting Devices (Beijing, May 16-21, 2010).

  研究成果: Article › 査読
• 2008

  MOCVD growth of c-axis oriented GaN on (110) Si substrates

  Ishikawa, H., Shimanaka, K., Hiromori, K., Mori, N. & Morimoto, T., 2008 7月 1, In: Default journal. p. Tu-58

  研究成果: Article › 査読

  18 被引用数 (Scopus)

• MOCVD growth of GaN on porous silicon substrates

  Ishikawa, H., Shimanaka, K., Tokura, F., Hayashi, Y., Hara, Y. & Nakanishi, M., 2008 11月 15, In: Journal of Crystal Growth. 310, 23, p. 4900-4903 4 p.

  研究成果: Article › 査読

  • Metallorganic chemical vapor deposition 100%
  • Porous silicon 94%
  • porous silicon 68%
  • metalorganic chemical vapor deposition 60%
  • Full width at half maximum 46%
  29 被引用数 (Scopus)
• 2007

  GaInN Light Emitting Diodes with Lattice-Matched AlInN/GaN Distributed Bragg Reflector on Si

  Ishikawa, H., Jimbo, T. & Egawa, T., 2007 9月 1, In: Default journal. p. MM3

  研究成果: Article › 査読
• 2006

  Al composition dependent properties of quaternary AlInGaN Schottky diodes

  Liu, Y., Jiang, H., Egawa, T., Zhang, B. & Ishikawa, H., 2006, In: Journal of Applied Physics. 99, 12, 123702.

  研究成果: Article › 査読

  • Schottky diodes 100%
  • electrical measurement 45%
  • capacitance 37%
  • templates 22%
  • heterojunctions 20%
  9 被引用数 (Scopus)

• AlGaN solar-blind Schottky photodiodes fabricated on 4H-SiC

  Jiang, H., Egawa, T. & Ishikawa, H., 2006 6月 15, In: IEEE Photonics Technology Letters. 18, 12, p. 1353-1355 3 p.

  研究成果: Article › 査読

  • Quantum efficiency 100%
  • Dark currents 96%
  • Photodiodes 79%
  • Current density 62%
  • photodiodes 58%
  15 被引用数 (Scopus)

• Highly efficient GaN-based light emitting diodes with micropits

  Hao, M., Egawa, T. & Ishikawa, H., 2006, In: Applied Physics Letters. 89, 24, 241907.

  研究成果: Article › 査読

  • light emitting diodes 100%
  • templates 29%
  • quantum efficiency 27%
  • photoluminescence 22%
  • transmission electron microscopy 20%
  17 被引用数 (Scopus)

• Infrared study on graded lattice quality in thin GaN crystals grown on sapphire

  Kuroda, N., Kitayama, T., Nishi, Y., Saiki, K., Yokoi, H., Watanabe, J., Cho, M., Egawa, T. & Ishikawa, H., 2006 2月 8, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 2 A, p. 646-650 5 p.

  研究成果: Article › 査読

  • Crystal lattices 100%
  • Sapphire 86%
  • Crystals 64%
  • Phonons 58%
  • Infrared radiation 56%
  10 被引用数 (Scopus)

• Novel quaternary AlInGaN/GaN heterostructure field effect transistors on sapphire substrate

  Liu, Y., Egawa, T., Jiang, H., Zhang, B. & Ishikawa, H., 2006 7月 7, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 7, p. 5728-5731 4 p.

  研究成果: Article › 査読

  • Sapphire 100%
  • High electron mobility transistors 86%
  • Two dimensional electron gas 65%
  • sapphire 63%
  • field effect transistors 58%
  8 被引用数 (Scopus)

• On the effects of gate-recess etching in current-collapse of different cap layers grown AlGaN/GaN high-electron-mobility transistors

  Arulkumaran, S., Egawa, T., Selvaraj, L. & Ishikawa, H., 2006 3月 10, In: Japanese Journal of Applied Physics, Part 2: Letters. 45, 8-11, p. L220-L223

  研究成果: Article › 査読

  • recesses 100%
  • High electron mobility transistors 86%
  • Etching 80%
  • caps 79%
  • high electron mobility transistors 77%
  17 被引用数 (Scopus)

• Realization of normally-off quaternary AlInGaN/GaN HEMT on sapphire substrate

  Liu, Y., Egawa, T., Jiang, H., Hayashi, M. & Ishikawa, H., 2006 10月 1, In: Default journal. p. MoP2-55

  研究成果: Article › 査読

• Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer

  Miyoshi, M., Egawa, T. & Ishikawa, H., 2006 9月, In: Solid-State Electronics. 50, 9-10, p. 1515-1521 7 p.

  研究成果: Article › 査読

  • Metallorganic vapor phase epitaxy 100%
  • High electron mobility transistors 65%
  • high electron mobility transistors 58%
  • Two dimensional electron gas 49%
  • Metallorganic Chemical Vapour Deposition 45%
  22 被引用数 (Scopus)
• 2005

  AlGaN/GaN dual-gate high electron mobility transistors on SiC substrates for high-power mixers

  Shiojima, K., Makimura, T., Kosugi, T., Sugitani, S., Shigekawa, N., Ishikawa, H. & Egawa, T., 2005, In: Physica Status Solidi C: Conferences. 2, 7, p. 2623-2626 4 p.

  研究成果: Article › 査読

  • high electron mobility transistors 100%
  • output 38%
  • transconductance 35%
  • electric potential 34%
  • electrical faults 31%
  1 被引用数 (Scopus)

• DC characteristics in high-quality AlGaN/AlN/GaN high-electron-mobility transistors grown on AIN/sapphire templates

  Miyoshi, M., Imanishi, A., Egawa, T., Ishikawa, H., Asai, K. I., Shibata, T., Tanaka, M. & Oda, O., 2005 9月 8, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 9 A, p. 6490-6494 5 p.

  研究成果: Article › 査読

  • Sapphire 100%
  • High electron mobility transistors 86%
  • high electron mobility transistors 77%
  • templates 69%
  • sapphire 63%
  30 被引用数 (Scopus)

• DC Characteristics in High-Quality AlGaN/AlN/ High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates

  Miyoshi, M., Imanishi, A., Egawa, T., Ishikawa, H., Asai, K., Shibata, T. & Oda, O., 2005 9月 1, In: Jpn. J. Appl. Phys.. Vol. 44, p. 6490-6493

  研究成果: Article › 査読

  30 被引用数 (Scopus)

• Demonstration of undoped quaternary AlInGaNGaN heterostructure field-effect transistor on sapphire substrate

  Liu, Y., Jiang, H., Arulkumaran, S., Egawa, T., Zhang, B. & Ishikawa, H., 2005, In: Applied Physics Letters. 86, 22, p. 1-3 3 p., 223510.

  研究成果: Article › 査読

  • sapphire 100%
  • field effect transistors 92%
  • modulation 39%
  • transconductance 32%
  • electron gas 28%
  53 被引用数 (Scopus)

• Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaNGaN high-electron-mobility transistors on 4 in. diameter silicon

  Arulkumaran, S., Egawa, T., Matsui, S. & Ishikawa, H., 2005 3月 21, In: Applied Physics Letters. 86, 12, p. 1-3 3 p., 123503.

  研究成果: Article › 査読

  • high electron mobility transistors 100%
  • electrical faults 95%
  • buffers 81%
  • augmentation 58%
  • silicon 52%
  109 被引用数 (Scopus)

• High performance of InGaN LEDs on (111) silicon substrates grown by MOCVD

  Egawa, T., Zhang, B. & Ishikawa, H., 2005 3月, In: IEEE Electron Device Letters. 26, 3, p. 169-171 3 p.

  研究成果: Article › 査読

  • Metallorganic chemical vapor deposition 100%
  • Light emitting diodes 62%
  • Silicon 49%
  • Current Density 46%
  • Substrates 44%
  75 被引用数 (Scopus)

• Maskless lateral epitaxial over growth of GaN films on in situ etched sapphire substrates by metalorganic chemical vapor deposition

  Hao, M., Egawa, T. & Ishikawa, H., 2005 12月 15, In: Journal of Crystal Growth. 285, 4, p. 466-472 7 p.

  研究成果: Article › 査読

  • Metallorganic chemical vapor deposition 100%
  • Sapphire 84%
  • metalorganic chemical vapor deposition 60%
  • Chemical Vapour Deposition 57%
  • sapphire 53%
  4 被引用数 (Scopus)

• Nanostructural characterization and two-dimensional electron-gas properties in high-mobility AlGaN/AlN/GaN heterostructures grown on epitaxial AlN/sapphire templates

  Miyoshi, M., Egawa, T., Ishikawa, H., Asai, K. I., Shibata, T., Tanaka, M. & Oda, O., 2005 9月 15, In: Journal of Applied Physics. 98, 6, 063713.

  研究成果: Article › 査読

  • electron gas 100%
  • templates 97%
  • sapphire 89%
  • characterization 58%
  • electron mobility 43%
  36 被引用数 (Scopus)

• Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers

  Nakazawa, S., Ueda, T., Inoue, K., Tanaka, T., Ishikawa, H. & Egawa, T., 2005 10月 1, In: IEEE Transactions on Electron Devices. 52, 10, p. 2124-2128 5 p.

  研究成果: Article › 査読

  • Ohmic contacts 100%
  • Heterojunctions 86%
  • Field effect transistors 70%
  • Field Effect 65%
  • Polarization 60%
  15 被引用数 (Scopus)

• Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional elctron transport porperties

  Miyoshi, M., Egawa, T. & Ishikawa, H., 2005, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23, 4, p. 1527-1531 5 p.

  研究成果: Article › 査読

  • Two dimensional electron gas 100%
  • Heterojunctions 74%
  • Metallorganic vapor phase epitaxy 40%
  • characterization 31%
  • Electron transport properties 22%
  39 被引用数 (Scopus)

• Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional electron transport properties

  Miyoshi, M., Egawa, T. & Ishikawa, H., 2005 8月 1, In: J. Vac. Sci. Technol. B,. Vol. 23, p. 1527-1531

  研究成果: Article › 査読

  39 被引用数 (Scopus)

• Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates

  Arulkumaran, S., Egawa, T. & Ishikawa, H., 2005 10月, In: Solid-State Electronics. 49, 10, p. 1632-1638 7 p.

  研究成果: Article › 査読

  • Drain Current 100%
  • Sapphire 86%
  • High electron mobility transistors 74%
  • high electron mobility transistors 66%
  • sapphire 55%
  40 被引用数 (Scopus)

• Studies of electron beam evaporated SiO₂/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

  Arulkumaran, S., Egawa, T. & Ishikawa, H., 2005 6月 24, In: Japanese Journal of Applied Physics, Part 2: Letters. 44, 24-27, p. L812-L815

  研究成果: Article › 査読

  • Oxide semiconductors 100%
  • Electron beams 99%
  • High electron mobility transistors 97%
  • high electron mobility transistors 87%
  • metal oxide semiconductors 86%
  27 被引用数 (Scopus)

• Studies on electron beam evaporated ZrO ₂/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

  Balachander, K., Arulkumaran, S., Ishikawa, H., Baskar, K. & Egawa, T., 2005 1月 1, In: Physica Status Solidi (A) Applications and Materials Science. 202, 2, p. R16-R18

  研究成果: Article › 査読

  • Leakage Current 100%
  • Oxide semiconductors 90%
  • Electron beams 90%
  • High electron mobility transistors 87%
  • Electron Beam 82%
  58 被引用数 (Scopus)

• Studies on the influences of i-GaN, n-GaN, p-GaN and InGaN cap layers in AlGaN/GaN high-electron-mobility transistors

  Arulkumaran, S., Egawa, T. & Ishikawa, H., 2005 5月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 5 A, p. 2953-2960 8 p.

  研究成果: Article › 査読

  • High electron mobility transistors 100%
  • caps 91%
  • high electron mobility transistors 89%
  • Two dimensional electron gas 37%
  • Drain current 13%
  45 被引用数 (Scopus)

• Thin-film InGaN multiple-quantum-well light-emitting diodes transferred from Si (111) substrate onto copper carrier by selective lift-off

  Zhang, B., Egawa, T., Ishikawa, H., Liu, Y. & Jimbo, T., 2005 2月 14, In: Applied Physics Letters. 86, 7, p. 1-3 3 p., 071113.

  研究成果: Article › 査読

  • light emitting diodes 100%
  • quantum wells 96%
  • copper 89%
  • thin films 64%
  • metal bonding 28%
  39 被引用数 (Scopus)
• 2004

  A quantitative model for the blueshift induced by rapid thermal annealing in GaNAs/GaAs triple quantum wells

  Sun, Y., Egawa, T. & Ishikawa, H., 2004 9月 1, In: Journal of Applied Physics. 96, 5, p. 2586-2591 6 p.

  研究成果: Article › 査読

  • quantum wells 100%
  • photoluminescence 90%
  • annealing 77%
  • radiative recombination 72%
  • optical properties 42%
  5 被引用数 (Scopus)

• Barrier-height-enhanced n-GaN Schottky photodiodes using a thin p-GaN surface layer

  Jiang, H., Egawa, T., Ishikawa, H., Dou, Y., Shao, C. & Jlmbo, T., 2004 7月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 7 A, p. 4101-4104 4 p.

  研究成果: Article › 査読

  • Photodiodes 100%
  • photodiodes 73%
  • surface layers 70%
  • Dark currents 60%
  • dark current 41%
  2 被引用数 (Scopus)

• Characterization of different-Al-content AlGaN/GaN heterostructures and high-electron-mobility transistors grown on 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy

  Miyoshi, M., Sakai, M., Arulkumaran, S., Ishikawa, H., Egawa, T., Tanaka, M. & Oda, O., 2004 12月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 12, p. 7939-7943 5 p.

  研究成果: Article › 査読

  • Metallorganic vapor phase epitaxy 100%
  • Sapphire 75%
  • Heterojunctions 74%
  • High electron mobility transistors 65%
  • vapor phase epitaxy 59%
  21 被引用数 (Scopus)

• Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si

  Ishikawa, H., Zhang, B., Asano, K., Egawa, T. & Jimbo, T., 2004 12月 10, In: Journal of Crystal Growth. 272, 1-4 SPEC. ISS., p. 322-326 5 p.

  研究成果: Article › 査読

  • Distributed Bragg reflectors 100%
  • Bragg reflectors 57%
  • Light emitting diodes 51%
  • Chemical Vapour Deposition 46%
  • light emitting diodes 41%
  22 被引用数 (Scopus)

• Characterizations of GaInN Light Emitting Diodes with Distributed Bragg Reflector Grown on Si

  Ishikawa, H., Zhang, B., Asano, K., Egawa, T. & Jimbo, T., 2004 5月 1, In: Default journal.

  研究成果: Article › 査読

  22 被引用数 (Scopus)

• Comparative study on the properties of GaNAs/GaAs triple quantum wells annealed by different methods

  Sun, Y., Yamamori, M., Egawa, T. & Ishikawa, H., 2004 3月 1, In: Japanese Journal of Applied Physics, Part 2: Letters. 43, 3 A, p. L334-L336

  研究成果: Article › 査読

  • Semiconductor quantum wells 100%
  • Rapid thermal annealing 98%
  • quantum wells 49%
  • Optical properties 39%
  • annealing 38%
  3 被引用数 (Scopus)

• Current collapse-free i-GaN/AlGaN/GaN high-electron-mobility transistors with and without surface passivation

  Arulkumaran, S., Hibino, T., Egawa, T. & Ishikawa, H., 2004 12月 6, In: Applied Physics Letters. 85, 23, p. 5745-5747 3 p.

  研究成果: Article › 査読

  • high electron mobility transistors 100%
  • passivity 89%
  • traps 72%
  • caps 25%
  • hysteresis 18%
  22 被引用数 (Scopus)

• Effect of various interlayers on epiwafer bowing in AlGaN/GaN high-electron-mobility transistor structures

  Sakai, M., Egawa, T., Hao, M. & Ishikawa, H., 2004 12月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 12, p. 8019-8023 5 p.

  研究成果: Article › 査読

  • Bending (forming) 100%
  • High electron mobility transistors 83%
  • high electron mobility transistors 74%
  • interlayers 65%
  • Multilayers 17%
  25 被引用数 (Scopus)

• Effects of Interfacial Thin Metal Layer for High-Performance Pt-Au-Based Schottky Contacts to AlGaN-GaN

  Miura, N., Oishi, T., Nanjo, T., Suita, M., Abe, Y., Ozeki, T., Ishikawa, H. & Egawa, T., 2004 3月 1, In: IEEE Transactions on Electron Devices. 51, 3, p. 297-303 7 p.

  研究成果: Article › 査読

  • Schottky Contact 100%
  • Diodes 56%
  • Auger electron spectroscopy 48%
  • Rapid thermal annealing 47%
  • Electrodes 47%
  31 被引用数 (Scopus)

• Effects of RTA cover material on the properties of GaNAs/GaAs triple quantum wells grown by chemical beam epitaxy

  Sun, Y., Yamamori, M., Egawa, T., Ishikawa, H. & Mito, K., 2004 9月 1, In: Journal of Crystal Growth. 269, 2-4, p. 229-234 6 p.

  研究成果: Article › 査読

  • Chemical Beam Epitaxy 100%
  • Chemical beam epitaxy 96%
  • Semiconductor quantum wells 82%
  • Rapid thermal annealing 81%
  • Rapid Thermal Annealing 78%
  2 被引用数 (Scopus)

• Formation chemistry of high-density nanocraters on the surface of sapphire substrates with an in situ etching and growth mechanism of device-quality GaN films on the etched substrates

  Hao, M., Ishikawa, H. & Egawa, T., 2004 5月 17, In: Applied Physics Letters. 84, 20, p. 4041-4043 3 p.

  研究成果: Article › 査読

  • chemistry 100%
  • sapphire 98%
  • decomposition 88%
  • etching 87%
  • metalorganic chemical vapor deposition 36%
  12 被引用数 (Scopus)

• GaN-based light-emitting diodes on Si substrates

  Ishikawa, H. & Egawa, T., 2004 12月 1, In: Default journal.

  研究成果: Article › 査読

• GaN films and GaN-based light emitting diodes grown on the sapphire substrates with high-density nano-craters formed in situ metalorganic vapor phase epitaxial reactor

  Hao, M., Ishikawa, H., Zhang, B. & Egawa, T., 2004, In: Physica Status Solidi C: Conferences. 1, 10, p. 2397-2400 4 p.

  研究成果: Article › 査読

  • craters 100%
  • sapphire 74%
  • vapor phases 70%
  • light emitting diodes 69%
  • reactors 66%
  1 被引用数 (Scopus)

• High-electron-mobility AlGaN/AIN/GaN heterostructures grown on 100-mm-diam epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy

  Miyoshi, M., Ishikawa, H., Egawa, T., Asai, K., Mouri, M., Shibata, T., Tanaka, M. & Oda, O., 2004 9月 6, In: Applied Physics Letters. 85, 10, p. 1710-1712 3 p.

  研究成果: Article › 査読

  • vapor phase epitaxy 100%
  • electron mobility 98%
  • templates 89%
  • sapphire 81%
  • electron gas 30%
  94 被引用数 (Scopus)

• High-electron-mobility AlGaN/AlN/GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

  Miyoshi, M., Ishikawa, H., Egawa, T., Asai, K., Mouri, M. & Shibata, T., 2004 9月 1, In: Default journal. 85, p. 1710-1712

  研究成果: Article › 査読

  94 被引用数 (Scopus)

• High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

  Shiojima, K., Makimura, T., Kosugi, T., Sugitani, S., Shigekawa, N., Ishikawa, H. & Egawa, T., 2004 6月 10, In: Electronics Letters. 40, 12, p. 775-776 2 p.

  研究成果: Article › 査読

  • High electron mobility transistors 100%
  • Demonstrations 70%
  • Substrates 61%
  22 被引用数 (Scopus)

• High-Temperature-Grown High-Quality Quaternary AlInGaN Quantum Well Structure for Ultraviolet Application

  Liu, Y., Egawa, T., Ishikawa, H., Jiang, H., Zhang, B. & Hao, M., 2004 5月 1, In: Default journal.

  研究成果: Article › 査読