石川 博康

研究成果

年別の研究成果 1995 1998 2001 2003 2004 2018

• 156 Article
• 14 Conference article
• 6 Letter
• 3 Conference contribution
• 3 その他
  • 3 Paper

年別の研究成果

年別の研究成果

検索結果

• 2001

  Effects of annealing on Ti, Pd, and Ni/n-Al_0.11Ga_0.89N Schottky diodes

  Arulkumaran, S., Egawa, T., Ishikawa, H., Umeno, M. & Jimbo, T., 2001 3月, In: IEEE Transactions on Electron Devices. 48, 3, p. 573-580 8 p.

  研究成果: Article › 査読

  • Annealing 100%
  • Diodes 92%
  • Semiconductor 30%
  • Temperature 30%
  • Semiconductor materials 22%
  77 被引用数 (Scopus)

• Effects of Annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky Diodes

  Arulkumaran, S., Egawa, T., Ishikawa, H., Umeno, M. & Jimbo, T., 2001 3月 1, In: Default journal. 48, p. 573-580

  研究成果: Article › 査読

  77 被引用数 (Scopus)

• GaN-based optoelectronic devices on sapphire and Si substrates

  Umeno, M., Egawa, T. & Ishikawa, H., 2001 12月 1, In: Materials Science in Semiconductor Processing. 4, 6, p. 459-466 8 p.

  研究成果: Article › 査読

  • MESFET devices 100%
  • Sapphire 81%
  • Optoelectronic devices 71%
  • Transconductance 63%
  • optoelectronic devices 61%
  37 被引用数 (Scopus)

• InGaN Multiple-Quantum-Well Light Emitting Diodes on Si(111) Substrates

  Zhang, B. J., Egawa, T., Ishikawa, H., Nishikawa, N., Jimbo, T. & Umeno, M., 2001 11月 1, In: Physica Status Solidi (A) Applied Research. 188, 1, p. 151-154 4 p.

  研究成果: Article › 査読

  • Semiconductor quantum wells 100%
  • Light emitting diodes 63%
  • light emitting diodes 50%
  • quantum wells 49%
  • Substrates 45%
  23 被引用数 (Scopus)

• Orange GaInN/GaN Multi-Quantum-Well Light-Emitting Diodes using a Post-Annealing Technique

  Ishikawa, H., Egawa, T. & Jimbo, T., 2001 10月 1, In: Default journal. p. TuP-8

  研究成果: Article › 査読

• Passivation of bulk and surface defects in GaAs grown on Si substrate by radio frequency phosphine/hydrogen plasma exposure

  Wang, G., Ogawa, T., Murase, K., Hori, K., Soga, T., Zhang, B., Zhao, G., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2001 8月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 40, 8, p. 4781-4784 4 p.

  研究成果: Article › 査読

  • phosphines 100%
  • Passivation 88%
  • Surface defects 87%
  • hydrogen plasma 82%
  • surface defects 79%
  3 被引用数 (Scopus)

• Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates

  Zhang, B. J., Egawa, T., Zhao, G. Y., Ishikawa, H., Umeno, M. & Jimbo, T., 2001 10月 15, In: Applied Physics Letters. 79, 16, p. 2567-2569 3 p.

  研究成果: Article › 査読

  • Schottky diodes 100%
  • sapphire 80%
  • electric potential 25%
  • electrical faults 23%
  • crystals 23%
  34 被引用数 (Scopus)

• Studies of AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Silicon Carbide and Sapphire Substrates

  Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2001 9月 1, In: Default journal. p. C-1-2

  研究成果: Article › 査読

• Suppression of GaInN/GaN Multi- Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure

  Ishikawa, H., Nakada, N., Mori, M., Zhao, G. -Y., Egawa, T., Jimbo, T. & Umeno, M., 2001 11月 1, In: Jpn. J. Appl. Phys.. 40, p. L1170-L1172

  研究成果: Article › 査読

  11 被引用数 (Scopus)
• 2000

  Bonding of GaN with Si using SeS2 and Laser Lift-off

  Arokiaraj, J., Ishikawa, H., Soga, T., Egawa, T., Jimbo, T. & Umeno, M., 2000 9月 1, In: Default journal. p. MA4-3

  研究成果: Article › 査読

• Effect of RIE Damage to Blue and Green Light Emitting Diodes

  Nakada, N., Nakaji, M., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2000 3月 1, In: Default journal. p. TuP16

  研究成果: Article › 査読

• Electrical Characteristics of Schottky Contacts on GaN and Al0.11Ga0.89N

  Arulkumaran, S., Egawa, T., Zhao, G. Y., Ishikawa, H., Jimbo, T. & Umeno, M., 2000 4月 1, In: Jpn. J. Appl. Phys.. 39, p. L351-L353

  研究成果: Article › 査読

• Fabrication of GaInN multiple-quantum well LEDs on Si (111) by MOCVD

  Adachi, M., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2000 9月 1, In: Default journal. p. PME-46

  研究成果: Article › 査読

• GaN MESFETs on (111) Si substrate grown by MOCVD

  Egawa, T., Nakada, N., Ishikawa, H. & Umeno, M., 2000 10月 12, In: Electronics Letters. 36, 21, p. 1816-1818 3 p.

  研究成果: Article › 査読

  • MESFET devices 100%
  • Metallorganic chemical vapor deposition 96%
  • Substrates 43%
  • Sapphire 40%
  • Transconductance 36%
  41 被引用数 (Scopus)

• Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition

  Zhao, G. Y., Adachi, M., Ishikawa, H., Egawa, T., Umeno, M. & Jimbo, T., 2000 10月 2, In: Applied Physics Letters. 77, 14, p. 2195-2197 3 p.

  研究成果: Article › 査読

  • metalorganic chemical vapor deposition 100%
  • flow velocity 33%
  • profiles 22%
  • saturation 14%
  • temperature 6%
  26 被引用数 (Scopus)

• High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition

  Zhao, G. Y., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2000, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 39, 3 A, p. 1035-1038 4 p.

  研究成果: Article › 査読

  • Two dimensional electron gas 100%
  • Organic chemicals 87%
  • Sapphire 76%
  • Heterojunctions 74%
  • Chemical vapor deposition 66%
  21 被引用数 (Scopus)

• High resposivity MSM UV photodetector based on GaN with back illumination

  Jiang, H., Nakada, N., Zhao, G. Y., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2000 12月 1, In: SiC及び関連ワイドバンドギャップ半導体研究会　第9回講演会予稿集. p. 115

  研究成果: Article › 査読

• Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

  Nakada, N., Nakaji, M., Ishikawa, H., Egawa, T., Umeno, M. & Jimbo, T., 2000 4月 3, In: Applied Physics Letters. 76, 14, p. 1804-1806 3 p.

  研究成果: Article › 査読

  • Bragg reflectors 100%
  • sapphire 75%
  • light emitting diodes 71%
  • quantum wells 69%
  • metalorganic chemical vapor deposition 42%
  111 被引用数 (Scopus)

• InGaN Light Emitting Diode with GaN/AlGaN Distributed Bragg Reflector

  Nakada, N., Nakaji, M., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2000 2月 1, In: Default journal. p. P-5

  研究成果: Article › 査読

• Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors

  Ishikawa, H., Nakada, N., Nakaji, M., Zhao, G. -Y., Egawa, T., Jimbo, T. & Umeno, M., 2000 4月 1, In: Default journal. E83-C, p. 591-597

  研究成果: Article › 査読

  3 被引用数 (Scopus)

• Investigations on strained AlGaN/GaN/Sapphire and GalnN multi-quantum-well surface LEDs using AlGaN/GaN bragg reflectors

  Ishikawa, H., Nakada, N., Nakaji, M., Zhao, G. Y., Egawa, T., Jimbo, T. & Umeno, M., 2000, In: IEICE Transactions on Electronics. E83-C, 4, p. 591-596 6 p.

  研究成果: Article › 査読

  • Distributed Bragg reflectors 100%
  • Bragg reflectors 99%
  • Semiconductor quantum wells 80%
  • Sapphire 68%
  • Reflectivity 59%
  3 被引用数 (Scopus)

• Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire

  Egawa, T., Ishikawa, H., Umeno, M. & Jimbo, T., 2000 1月 3, In: Applied Physics Letters. 76, 1, p. 121-123 3 p.

  研究成果: Article › 査読

  • sapphire 100%
  • field effect transistors 92%
  • transconductance 86%
  • modulation 78%
  • electron gas 37%
  81 被引用数 (Scopus)

• Schottky contacts of Ni/Au on n-GaN grown on sapphire and SiC substrates

  Zhang, B. J., Zhao, G. Y., Nishikawa, N., Adachi, M., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2000 12月 1, In: SiC及び関連ワイドバンドギャップ半導体研究会　第9回講演会予稿集. p. P88 (2008)-103

  研究成果: Article › 査読

• Thermal stability of Pd/Al0.11Ga0.89N Schottky diodes

  Arulkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T. & Umeno, M., 2000 9月 1, In: Default journal. p. PTD-47

  研究成果: Article › 査読
• 1999

  Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition

  Egawa, T., Nakamura, K., Ishikawa, H., Jimbo, T. & Umeno, M., 1999 4月 1, In: Default journal. 38, p. 2630-2633

  研究成果: Article › 査読

  13 被引用数 (Scopus)

• Characteristics of a GaN metal semiconductor field-effect transistor grown on a sapphire substrate by metalorganic chemical vapor deposition

  Egawa, T., Nakamura, K., Ishikawa, H., Jimbo, T. & Umeno, M., 1999, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38, 4 B, p. 2630-2633 4 p.

  研究成果: Article › 査読

  • MESFET devices 100%
  • Metallorganic chemical vapor deposition 96%
  • Sapphire 81%
  • metalorganic chemical vapor deposition 58%
  • sapphire 52%
  13 被引用数 (Scopus)

• GaN on Si Substrate with AlGaN/AlN Intermediate Layer

  Ishikawa, H., Zhao, G. Y., Nakada, N., Egawa, T., Jimbo, T. & Umeno, M., 1999 5月 1, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38, 5 PART 2, p. 492-494 3 p.

  研究成果: Article › 査読

  • Full width at half maximum 100%
  • Photoluminescence 54%
  • Metallorganic chemical vapor deposition 53%
  • Substrates 47%
  • Single crystals 39%
  205 被引用数 (Scopus)

• High-Quality GaN on Si substrate by use of AlGaN/AlN Intermediate layer

  Ishikawa, H., Zhao, Z. Y., Nakada, N., Egawa, T., Soga, T., Jimbo, T. & Umeno, M., 1999 7月 1, In: Default journal. p. Mo_056

  研究成果: Article › 査読

  11 被引用数 (Scopus)

• High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector

  Nakada, N., Nakaji, M., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 1999 9月 1, In: Default journal. p. C-6-4

  研究成果: Article › 査読

• Optical absorption and photoluminescence studies of n-type GaN

  Zhao, G. Y., Ishikawa, H., Jiang, H., Egawa, T., Jimbo, T. & Umeno, M., 1999 9月 15, In: Japanese Journal of Applied Physics, Part 2: Letters. 38, 9 A/B, p. L993-L995

  研究成果: Article › 査読

  • Photoluminescence 100%
  • Light absorption 93%
  • Tailings 80%
  • optical absorption 52%
  • Doping (additives) 45%
  34 被引用数 (Scopus)
• 1998

  Al0.27Ga0.73N/GaN distributed Bragg Reflector grown by atmospheric pressure MOCVD

  Ishikawa, H., Nakada, N., Zhao, G. Y., Egawa, T., Jimbo, T. & .Umeno, M., 1998 9月 1, In: Default journal. p. Fr-15

  研究成果: Article › 査読

• Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD

  Egawa, T., Nakamura, K., Ishikawa, H., Jimbo, T. & Umeno, M., 1998 9月 1, In: Default journal. p. C-10-2

  研究成果: Article › 査読

• EBIC observation of n-GaN grown on sapphire substrates by MOCVD

  Yamamoto, K., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 1998 6月 15, In: Journal of Crystal Growth. 189-190, p. 575-579 5 p.

  研究成果: Article › 査読

  • Electron Beam Induced Current 100%
  • Metallorganic chemical vapor deposition 79%
  • Sapphire 67%
  • Induced currents 64%
  • Electron beams 60%
  17 被引用数 (Scopus)

• High-Temperature Behaviors of GaN Schottky Barrier Diode

  Nakamura, K., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 1998 9月 1, In: Default journal. p. C-9-3

  研究成果: Article › 査読

• Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density

  Arulkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T. & Umeno, M., 1998 8月 1, In: Default journal. 73, p. 809-811

  研究成果: Article › 査読

  193 被引用数 (Scopus)

• Investigations of SiO₂/n-GaN and Si₃N₄/n-GaN insulator-semiconductor interfaces with low interface state density

  Arulkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T. & Umeno, M., 1998, In: Applied Physics Letters. 73, 6, p. 809-811 3 p.

  研究成果: Article › 査読

  • vapors 100%
  • insulators 97%
  • electron beams 47%
  • MIS (semiconductors) 24%
  • x ray spectroscopy 22%
  193 被引用数 (Scopus)

• Mechanical properties of the GaN thin films deposited on sapphire substrate

  Yu, G., Ishikawa, H., Egawa, T., Soga, T., Watanabe, J., Jimbo, T. & Umeno, M., 1998 6月 15, In: Journal of Crystal Growth. 189-190, p. 701-705 5 p.

  研究成果: Article › 査読

  • Sapphire 100%
  • Thin films 70%
  • sapphire 63%
  • Substrates 52%
  • mechanical properties 50%
  49 被引用数 (Scopus)

• Micro-Raman Scattering Study of Internal Strain Relaxation in Post-Growth Patterned GaN Film Grown on Sapphire Substrate

  Hayashi, Y., Ishikawa, H., Egawa, T., Soga, T., Jimbo, T. & .Umeno, M., 1998 9月 1, In: Default journal. p. Th-P48

  研究成果: Article › 査読

  3 被引用数 (Scopus)

• Optical properties of Al_xGa_1-xN/GaN heterostructures on sapphire by spectroscopic ellipsometry

  Yu, G., Ishikawa, H., Umeno, M., Egawa, T., Watanabe, J., Jimbo, T. & Soga, T., 1998, In: Applied Physics Letters. 72, 18, p. 2202-2204 3 p.

  研究成果: Article › 査読

  • ellipsometry 100%
  • sapphire 86%
  • excitons 80%
  • refractivity 71%
  • optical properties 66%
  63 被引用数 (Scopus)

• Optical properties of AlxGa1-xN/GaN heterostructures on sapphire by spectroscopic ellipsometry

  Yu, G., Ishikawa, H., Umeno, M., Egawa, T., Watanabe, J., Jimbo, T. & Soga, T., 1998 5月 1, In: Appl. Phys. Lett.. 72, p. 2202-2204

  研究成果: Article › 査読

  63 被引用数 (Scopus)

• Pd/GaN Schottky diode with a barrier height of 1.5 eV and a reasonably effective Richardson coefficient

  Ishikawa, H., Nakamura, K., Egawa, T., Jimbo, T. & Umeno, M., 1998 1月 15, In: Japanese Journal of Applied Physics, Part 2: Letters. 37, 1 PART A/B, p. L7-L9

  研究成果: Article › 査読

  • Schottky diodes 100%
  • Diodes 87%
  • Metallorganic chemical vapor deposition 74%
  • Electronic properties 73%
  • Ohmic contacts 71%
  24 被引用数 (Scopus)

• Sidegating effect of GaN MESFETs grown on sapphire substrate

  Egawa, T., Ishikawa, H., Jimbo, T. & Umeno, M., 1998 3月 19, In: Electronics Letters. 34, 6, p. 598-600 3 p.

  研究成果: Article › 査読

  • MESFET devices 100%
  • Sapphire 81%
  • Electron mobility 48%
  • Carrier concentration 43%
  • Substrates 43%
  7 被引用数 (Scopus)

• The infrared optical functions of Al_xGa_1-xN determined by reflectance spectroscopy

  Yu, G., Ishikawa, H., Umeno, M., Egawa, T., Watanabe, J., Soga, T. & Jimbo, T., 1998, In: Applied Physics Letters. 73, 11, p. 1472-1474 3 p.

  研究成果: Article › 査読

  • sapphire 100%
  • reflectance 82%
  • spectroscopy 61%
  • permittivity 20%
  • phonons 20%
  47 被引用数 (Scopus)

• The infrared optical functions of AlxGa1-xN determined by reflectance spectroscopy

  Yu, G., Ishikawa, H., M.Umeno, M. U., Egawa, T., Watanabe, J., Soga, T. & Jimbo, T., 1998 9月 1, In: Appl. Phys. Lett.. 73, p. 1472-1474

  研究成果: Article › 査読

  47 被引用数 (Scopus)

• Thermal stability of GaN on (111)Si substrate

  Ishikawa, H., Yamamoto, K., Egawa, T., Soga, T., Jimbo, T. & Umeno, M., 1998 6月 1, In: J. Crystal Growth. 189/190, p. 178-182

  研究成果: Article › 査読

  183 被引用数 (Scopus)

• Thermal stability of GaN on (1 1 1) Si substrate

  Ishikawa, H., Yamamoto, K., Egawa, T., Soga, T., Jimbo, T. & Umeno, M., 1998 6月 15, In: Journal of Crystal Growth. 189-190, p. 178-182 5 p.

  研究成果: Article › 査読

  • Thermodynamic stability 100%
  • thermal stability 84%
  • Annealing 76%
  • Substrates 68%
  • Thermal Stability 63%
  183 被引用数 (Scopus)

• Thermo-optical nonlinearity of GaN grown by metalorganic chemical-vapor deposition

  Zhao, G. Y., Ishikawa, H., Yu, G., Egawa, T., Watanabe, J. & Soga, T., 1998 7月 1, In: Appl. Phys. Lett.. 73, p. 22-24

  研究成果: Article › 査読

  17 被引用数 (Scopus)

• Thermo-optical nonlinearity of GaN grown by metalorganic chemical- vapor deposition

  Zhao, G. Y., Ishikawa, H., Yu, G., Egawa, T., Watanabe, J., Soga, T., Jimbo, T. & Umeno, M., 1998 12月 1, In: Applied Physics Letters. 73, 1, p. 22-24 3 p.

  研究成果: Article › 査読

  • ellipsometry 100%
  • metalorganic chemical vapor deposition 97%
  • nonlinearity 77%
  • coefficients 55%
  • temperature 30%
  17 被引用数 (Scopus)
• 1997

  Fabrication of flat end mirror etched by focused ion beam for GaN-based blue-green laser diode

  Ito, T., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 1997 12月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36, 12 SUPPL. B, p. 7710-7711 2 p.

  研究成果: Article › 査読

  • Focused ion beams 100%
  • Semiconductor lasers 89%
  • Mirrors 73%
  • Metallorganic chemical vapor deposition 56%
  • ion beams 55%
  14 被引用数 (Scopus)

• Optical characterization of GaN/sapphire films by spectroscopic ellipsometery and the optical transmission method

  Wang, G., Yu, G., Ishikawa, H., Egawa, T., Watanabe, J., Jimbo, T. & Umeno, M., 1997 3月 1, In: Default journal. p. 28p-D-1

  研究成果: Article › 査読