年別の研究成果
年別の研究成果
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1997
Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78-4.77eV) by spectroscopic ellipsometry and the optical transmission method
Yu, G., Wang, G., Ishikawa, H., Umeno, M., Soga, T., Egawa, T., Watanabe, J. & Jimbo, T., 1997 6月 1, In: Appl. Phys. Lett.. 70, p. 3209-3211研究成果: Article › 査読
267 被引用数 (Scopus) -
Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78-4.77 eV) by spectroscopic ellipsometry and the optical transmission method
Yu, G., Wang, G., Ishikawa, H., Umeno, M., Soga, T., Egawa, T., Watanabe, J. & Jimbo, T., 1997 6月 16, In: Applied Physics Letters. 70, 24, p. 3209-3211 3 p.研究成果: Article › 査読
267 被引用数 (Scopus) -
Polarized reflectance spectroscopy and spectroscopic ellipsometry determination of the optical anisotropy of gallium nitride on sapphire
Yu, G., Ishikawa, H., Egawa, T., Soga, T., Watanabe, J., Jimbo, T. & Umeno, M., 1997 8月 1, In: Japanese Journal of Applied Physics, Part 2: Letters. 36, 8 PART A, p. L1029-L1031研究成果: Article › 査読
45 被引用数 (Scopus) -
1996
Highly c-axis aligned GaN thin film grown on Si using GaP intermediate layer by metalorganic chemical vapor deposition
Ishikawa, H., Soga, T., Nagatomo, T., Jimbo, T. & Umeno, M., 1996 3月 1, In: Default journal. p. We-P31研究成果: Article › 査読
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Optical degradation of InGaN/AlGaN light-emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition
Egawa, T., Ishikawa, H., Jimbo, T. & Umeno, M., 1996 8月 5, In: Applied Physics Letters. 69, 6, p. 830-832 3 p.研究成果: Article › 査読
53 被引用数 (Scopus) -
1995
Crystal growth of GaN on GaP substrate using RF plasma assisted metalorganic chemical vapor deposition for blue emitting laser diode on Si
Ishikawa, H., Tsuchida, M., Shao, C. L., Soga, T., Jimbo, T. & Umeno, M., 1995 9月 1, In: Default journal. p. P-19研究成果: Article › 査読