石川 博康

研究成果

年別の研究成果 1995 1998 2001 2003 2004 2018

• 156 Article
• 14 Conference article
• 6 Letter
• 3 Conference contribution
• 3 その他
  • 3 Paper

年別の研究成果

年別の研究成果

検索結果

• Nanostructural characterization and two-dimensional electron-gas properties in high-mobility AlGaN/AlN/GaN heterostructures grown on epitaxial AlN/sapphire templates

  Miyoshi, M., Egawa, T., Ishikawa, H., Asai, K. I., Shibata, T., Tanaka, M. & Oda, O., 2005 9月 15, In: Journal of Applied Physics. 98, 6, 063713.

  研究成果: Article › 査読

  • electron gas 100%
  • templates 97%
  • sapphire 89%
  • characterization 58%
  • electron mobility 43%
  36 被引用数 (Scopus)

• MOVPE Growth and Characterization of High-Al-Content AlxGa1-xN/GaN Heterostructures for High-Power HEMTs on 100-mm-Diameter Sapphire Substrates

  Miyoshi, M., Sakai, M., Arulkumaran, S., Ishikawa, H., Egawa, T., Jimbo, T., Tanaka, M. & Oda, O., 2004 5月 1, In: Default journal.

  研究成果: Article › 査読

• MOVPE growth and characterization of high-Al-content AlGaN/GaN heterostructures on 100-mm-diameter sapphire substrates

  Miyoshi, M., Sakai, M., Ishikawa, H., Egawa, T., Jimbo, T., Tanaka, M. & Oda, O., 2004 12月 10, In: Journal of Crystal Growth. 272, 1-4 SPEC. ISS., p. 293-299 7 p.

  研究成果: Article › 査読

  • Metallorganic vapor phase epitaxy 100%
  • Metallorganic Chemical Vapour Deposition 91%
  • Carrier concentration 80%
  • Sheet resistance 78%
  • Sapphire 75%
  26 被引用数 (Scopus)

• MOCVD growth of high reflective GaN/AlGaN distributed Bragg reflectors

  Nakada, N., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2002 4月, In: Journal of Crystal Growth. 237-239, 1 4 II, p. 961-967 7 p.

  研究成果: Article › 査読

  • Distributed Bragg reflectors 100%
  • Metallorganic chemical vapor deposition 81%
  • Reflectivity 59%
  • Bragg reflectors 57%
  • metalorganic chemical vapor deposition 49%
  22 被引用数 (Scopus)

• MOCVD growth of GaN on porous silicon substrates

  Ishikawa, H., Shimanaka, K., Tokura, F., Hayashi, Y., Hara, Y. & Nakanishi, M., 2008 11月 15, In: Journal of Crystal Growth. 310, 23, p. 4900-4903 4 p.

  研究成果: Article › 査読

  • Metallorganic chemical vapor deposition 100%
  • Porous silicon 94%
  • porous silicon 68%
  • metalorganic chemical vapor deposition 60%
  • Full width at half maximum 46%
  29 被引用数 (Scopus)

• MOCVD growth of c-axis oriented GaN on (110) Si substrates

  Ishikawa, H., Shimanaka, K., Hiromori, K., Mori, N. & Morimoto, T., 2008 7月 1, In: Default journal. p. Tu-58

  研究成果: Article › 査読

  18 被引用数 (Scopus)

• Micro-Raman Scattering Study of Internal Strain Relaxation in Post-Growth Patterned GaN Film Grown on Sapphire Substrate

  Hayashi, Y., Ishikawa, H., Egawa, T., Soga, T., Jimbo, T. & .Umeno, M., 1998 9月 1, In: Default journal. p. Th-P48

  研究成果: Article › 査読

  3 被引用数 (Scopus)

• Mechanical properties of the GaN thin films deposited on sapphire substrate

  Yu, G., Ishikawa, H., Egawa, T., Soga, T., Watanabe, J., Jimbo, T. & Umeno, M., 1998 6月 15, In: Journal of Crystal Growth. 189-190, p. 701-705 5 p.

  研究成果: Article › 査読

  • Sapphire 100%
  • Thin films 70%
  • sapphire 63%
  • Substrates 52%
  • mechanical properties 50%
  49 被引用数 (Scopus)

• Maskless lateral epitaxial over growth of GaN films on in situ etched sapphire substrates by metalorganic chemical vapor deposition

  Hao, M., Egawa, T. & Ishikawa, H., 2005 12月 15, In: Journal of Crystal Growth. 285, 4, p. 466-472 7 p.

  研究成果: Article › 査読

  • Metallorganic chemical vapor deposition 100%
  • Sapphire 84%
  • metalorganic chemical vapor deposition 60%
  • Chemical Vapour Deposition 57%
  • sapphire 53%
  4 被引用数 (Scopus)

• Low Noise and Low Distortion Performances of an AlGaN/GaN HFET

  Hirose, Y., Ikeda, Y., Ishii, M., Murata, T., Inoue, K., Tanaka, T., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 10月, In: IEICE Transactions on Electronics. E86-C, 10, p. 2058-2064 7 p.

  研究成果: Article › 査読

  • Epitaxial Film 100%
  • Leakage Current 92%
  • Heterojunctions 91%
  • Field effect transistors 75%
  • Epitaxial films 71%
  15 被引用数 (Scopus)

• Low dark current GaN Schottky UV photodiodes using oxidised IrNi Schottky contact

  Jiang, H., Egawa, T., Ishikawa, H., Dou, Y. B., Shao, C. L. & Jimbo, T., 2003 11月 22, In: Electronics Letters. 39, 22, p. 1604-1606 3 p.

  研究成果: Article › 査読

  • Dark currents 100%
  • Photodiodes 82%
  • Metallizing 76%
  • Annealing 65%
  • Current density 64%
  7 被引用数 (Scopus)

• Large-area profile transformation of inkjet-printed PD precursor films by slit-nozzle humidification and redrying for PdO nanofilm field emitters

  Kondo, H., Sato, T. & Ishikawa, H., 2018 7月, In: Journal of Imaging Science and Technology. 62, 4, 40501.

  研究成果: Article › 査読

  • Nanofilm 100%
  • Nozzle 97%
  • nozzles 77%
  • slits 77%
  • Nozzles 72%

• Investigations on strained AlGaN/GaN/Sapphire and GalnN multi-quantum-well surface LEDs using AlGaN/GaN bragg reflectors

  Ishikawa, H., Nakada, N., Nakaji, M., Zhao, G. Y., Egawa, T., Jimbo, T. & Umeno, M., 2000, In: IEICE Transactions on Electronics. E83-C, 4, p. 591-596 6 p.

  研究成果: Article › 査読

  • Distributed Bragg reflectors 100%
  • Bragg reflectors 99%
  • Semiconductor quantum wells 80%
  • Sapphire 68%
  • Reflectivity 59%
  3 被引用数 (Scopus)

• Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors

  Ishikawa, H., Nakada, N., Nakaji, M., Zhao, G. -Y., Egawa, T., Jimbo, T. & Umeno, M., 2000 4月 1, In: Default journal. E83-C, p. 591-597

  研究成果: Article › 査読

  3 被引用数 (Scopus)

• Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density

  Arulkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T. & Umeno, M., 1998 8月 1, In: Default journal. 73, p. 809-811

  研究成果: Article › 査読

  193 被引用数 (Scopus)

• Investigations of SiO₂/n-GaN and Si₃N₄/n-GaN insulator-semiconductor interfaces with low interface state density

  Arulkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T. & Umeno, M., 1998, In: Applied Physics Letters. 73, 6, p. 809-811 3 p.

  研究成果: Article › 査読

  • vapors 100%
  • insulators 97%
  • electron beams 47%
  • MIS (semiconductors) 24%
  • x ray spectroscopy 22%
  193 被引用数 (Scopus)

• InGaN Multiple-Quantum-Well Light Emitting Diodes on Si(111) Substrates

  Zhang, B. J., Egawa, T., Ishikawa, H., Nishikawa, N., Jimbo, T. & Umeno, M., 2001 11月 1, In: Physica Status Solidi (A) Applied Research. 188, 1, p. 151-154 4 p.

  研究成果: Article › 査読

  • Semiconductor quantum wells 100%
  • Light emitting diodes 63%
  • light emitting diodes 50%
  • quantum wells 49%
  • Substrates 45%
  23 被引用数 (Scopus)

• InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition

  Egawa, T., Zhang, B., Nishikawa, N., Ishikawa, H., Jimbo, T. & Umeno, M., 2002 1月 1, In: Journal of Applied Physics. 91, 1, p. 528-530 3 p.

  研究成果: Article › 査読

  • metalorganic chemical vapor deposition 100%
  • light emitting diodes 83%
  • quantum wells 81%
  • output 24%
  • sapphire 17%
  65 被引用数 (Scopus)

• InGaN Light Emitting Diode with GaN/AlGaN Distributed Bragg Reflector

  Nakada, N., Nakaji, M., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2000 2月 1, In: Default journal. p. P-5

  研究成果: Article › 査読

• Infrared study on graded lattice quality in thin GaN crystals grown on sapphire

  Kuroda, N., Kitayama, T., Nishi, Y., Saiki, K., Yokoi, H., Watanabe, J., Cho, M., Egawa, T. & Ishikawa, H., 2006 2月 8, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 2 A, p. 646-650 5 p.

  研究成果: Article › 査読

  • Crystal lattices 100%
  • Sapphire 86%
  • Crystals 64%
  • Phonons 58%
  • Infrared radiation 56%
  10 被引用数 (Scopus)

• Influence of growth temperature on quaternary AlInGaN epilayers for ultraviolet emission grown by metalorganic chemical vapor deposition

  Liu, Y., Egawa, T., Ishikawa, H., Zhang, B. & Hao, M., 2004 5月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 5 A, p. 2414-2418 5 p.

  研究成果: Article › 査読

  • Epilayers 100%
  • Growth temperature 94%
  • Metallorganic chemical vapor deposition 92%
  • ultraviolet emission 71%
  • metalorganic chemical vapor deposition 55%
  18 被引用数 (Scopus)

• Improvement of DC and RF characteristics of AlGaN/GaN high electron mobility transistors by thermally annealed Ni/Pt/Au schottky gate

  Nanjo, T., Miura, N., Oishi, T., Suita, M., Abe, Y., Ozeki, T., Nakatsuka, S., Indue, A., Ishikawa, T., Matsuda, Y., Ishikawa, H. & Egawa, T., 2004 4月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 4 B, p. 1925-1929 5 p.

  研究成果: Article › 査読

  • High electron mobility transistors 100%
  • high electron mobility transistors 89%
  • direct current 67%
  • Electric breakdown 64%
  • Annealing 57%
  28 被引用数 (Scopus)

• Improved dc characteristics of AlGaN/ GaN high-electron-mobility transistors on AlN/sapphire templates

  Arulkumaran, S., Sakai, M., Egawa, T., Ishikawa, H., Jimbo, T., Shibata, T., Asai, K., Sumiya, S. & Kuraoka?2?, Y., 2002 8月 1, In: Appl. Phys. Lett.. 81, p. 1131-1133

  研究成果: Article › 査読

  65 被引用数 (Scopus)

• Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates

  Arulkumaran, S., Sakai, M., Egawa, T., Ishikawa, H., Jimbo, T., Shibata, T., Asai, K., Sumiya, S., Kuraoka, Y., Tanaka, M. & Oda, O., 2002 8月 5, In: Applied Physics Letters. 81, 6, p. 1131-1133 3 p.

  研究成果: Article › 査読

  • high electron mobility transistors 100%
  • templates 90%
  • sapphire 82%
  • transconductance 26%
  • cathodoluminescence 13%
  65 被引用数 (Scopus)

• Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

  Nakada, N., Nakaji, M., Ishikawa, H., Egawa, T., Umeno, M. & Jimbo, T., 2000 4月 3, In: Applied Physics Letters. 76, 14, p. 1804-1806 3 p.

  研究成果: Article › 査読

  • Bragg reflectors 100%
  • sapphire 75%
  • light emitting diodes 71%
  • quantum wells 69%
  • metalorganic chemical vapor deposition 42%
  111 被引用数 (Scopus)

• Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si

  Ishikawa, H., Asano, K., Zhang, B., Egawa, T. & Jimbo, T., 2004 9月 1, In: Physica Status Solidi (A) Applied Research. 201, 12, p. 2653-2657 5 p.

  研究成果: Article › 査読

  • Distributed Bragg reflectors 100%
  • Bragg reflectors 57%
  • Light emitting diodes 51%
  • Chemical Vapour Deposition 46%
  • light emitting diodes 41%
  36 被引用数 (Scopus)

• Improved characteristics of GaN-based light emitting diode by distributed Bragg reflector grown on Si

  Ishikawa, H., Asano, K., Zhang, B., Egawa, T. & Jimbo, T., 2004 3月 1, In: Default journal. p. A10-4

  研究成果: Article › 査読

  21 被引用数 (Scopus)

• High Trans-conductance AlGaN/GaN-HEMT with Recessed Gate on Sapphire Substrate

  Okita, H., Kaifu, K., Mita, J., Yamada, T., Sano, Y., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 5月 1, In: Default journal. p. Tu-A3.4

  研究成果: Article › 査読

• High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

  Okita, H., Kaifu, K., Mita, J., Yamada, T., Sano, Y., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 11月, In: Physica Status Solidi (A) Applied Research. 200, 1, p. 187-190 4 p.

  研究成果: Article › 査読

  • Transconductance 100%
  • Gates (transistor) 92%
  • Sapphire 86%
  • Electron Mobility 77%
  • High electron mobility transistors 75%
  22 被引用数 (Scopus)

• High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission

  Liu, Y., Egawa, T., Ishikawa, H., Jiang, H., Zhang, B., Hao, M. & Jimbo, T., 2004 3月 15, In: Journal of Crystal Growth. 264, 1-3, p. 159-164 6 p.

  研究成果: Article › 査読

  • Epilayers 100%
  • Semiconductor quantum wells 91%
  • ultraviolet emission 71%
  • Growth temperature 70%
  • Photoluminescence 47%
  18 被引用数 (Scopus)

• High-Temperature-Grown High-Quality Quaternary AlInGaN Quantum Well Structure for Ultraviolet Application

  Liu, Y., Egawa, T., Ishikawa, H., Jiang, H., Zhang, B. & Hao, M., 2004 5月 1, In: Default journal.

  研究成果: Article › 査読

• High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates

  Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2002 3月 25, In: Applied Physics Letters. 80, 12, p. 2186-2188 3 p.

  研究成果: Article › 査読

  • high electron mobility transistors 100%
  • temperature effects 88%
  • sapphire 82%
  • transconductance 42%
  • thermal stresses 20%
  97 被引用数 (Scopus)

• High-Temperature Behaviors of GaN Schottky Barrier Diode

  Nakamura, K., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 1998 9月 1, In: Default journal. p. C-9-3

  研究成果: Article › 査読

• High resposivity MSM UV photodetector based on GaN with back illumination

  Jiang, H., Nakada, N., Zhao, G. Y., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2000 12月 1, In: SiC及び関連ワイドバンドギャップ半導体研究会　第9回講演会予稿集. p. 115

  研究成果: Article › 査読

• High-quality quaternary AlInGaN epilayers on sapphire

  Liu, Y., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 11月 1, In: Physica Status Solidi (A) Applied Research. 200, 1, p. 36-39 4 p.

  研究成果: Article › 査読

  • Epilayers 100%
  • Sapphire 78%
  • Photoluminescence Spectrum 58%
  • Full width at half maximum 57%
  • Chemical Vapour Deposition 52%
  14 被引用数 (Scopus)

• High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector

  Nakada, N., Nakaji, M., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 1999 9月 1, In: Default journal. p. C-6-4

  研究成果: Article › 査読

• High-Quality GaN on Si substrate by use of AlGaN/AlN Intermediate layer

  Ishikawa, H., Zhao, Z. Y., Nakada, N., Egawa, T., Soga, T., Jimbo, T. & Umeno, M., 1999 7月 1, In: Default journal. p. Mo_056

  研究成果: Article › 査読

  12 被引用数 (Scopus)

• High-Quality GaN Growth on AlN/Sapphire Templates by MOVPE

  Sakai, M., Ishikawa, H., Egawa, T., Jimbo, T., Umeno, M., Shibata, T., Asai, K., Sumiya, S. & Kuraoka?2?, Y., 2002 1月 1, In: Inst. Phys. Conf. Ser.. p. 783-788

  研究成果: Article › 査読

• High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates

  Sakai, M., Asano, K., Arulkumaran, S., Ishikawa, H., Egawa, T., Jimbo, T., Shibata, T., Tanaka, M. & Oda, O., 2003 10月, In: IEICE Transactions on Electronics. E86-C, 10, p. 2071-2076 6 p.

  研究成果: Article › 査読

  • Sapphire 100%
  • Electron Mobility 89%
  • High electron mobility transistors 86%
  • Crystals 24%
  • Capacitance measurement 18%
  1 被引用数 (Scopus)

• High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

  Shiojima, K., Makimura, T., Kosugi, T., Sugitani, S., Shigekawa, N., Ishikawa, H. & Egawa, T., 2004 6月 10, In: Electronics Letters. 40, 12, p. 775-776 2 p.

  研究成果: Article › 査読

  • High electron mobility transistors 100%
  • Demonstrations 70%
  • Substrates 61%
  22 被引用数 (Scopus)

• High performance of InGaN LEDs on (111) silicon substrates grown by MOCVD

  Egawa, T., Zhang, B. & Ishikawa, H., 2005 3月, In: IEEE Electron Device Letters. 26, 3, p. 169-171 3 p.

  研究成果: Article › 査読

  • Metallorganic chemical vapor deposition 100%
  • Light emitting diodes 62%
  • Silicon 49%
  • Current Density 46%
  • Substrates 44%
  75 被引用数 (Scopus)

• High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition

  Zhao, G. Y., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2000, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 39, 3 A, p. 1035-1038 4 p.

  研究成果: Article › 査読

  • Two dimensional electron gas 100%
  • Organic chemicals 87%
  • Sapphire 76%
  • Heterojunctions 74%
  • Chemical vapor deposition 66%
  21 被引用数 (Scopus)

• Highly resistive GaN layers formed by ion implantation of Zn along the c axis

  Oishi, T., Miura, N., Suita, M., Nanjo, T., Abe, Y., Ozeki, T., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 8月 1, In: Journal of Applied Physics. 94, 3, p. 1662-1666 5 p.

  研究成果: Article › 査読

  • ion implantation 100%
  • heavy ions 95%
  • ions 50%
  • damage 38%
  • dosage 36%
  46 被引用数 (Scopus)

• Highly efficient GaN-based light emitting diodes with micropits

  Hao, M., Egawa, T. & Ishikawa, H., 2006, In: Applied Physics Letters. 89, 24, 241907.

  研究成果: Article › 査読

  • light emitting diodes 100%
  • templates 29%
  • quantum efficiency 27%
  • photoluminescence 22%
  • transmission electron microscopy 20%
  17 被引用数 (Scopus)

• Highly c-axis aligned GaN thin film grown on Si using GaP intermediate layer by metalorganic chemical vapor deposition

  Ishikawa, H., Soga, T., Nagatomo, T., Jimbo, T. & Umeno, M., 1996 3月 1, In: Default journal. p. We-P31

  研究成果: Article › 査読

• High-electron-mobility AlGaN/AlN/GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

  Miyoshi, M., Ishikawa, H., Egawa, T., Asai, K., Mouri, M. & Shibata, T., 2004 9月 1, In: Default journal. 85, p. 1710-1712

  研究成果: Article › 査読

  94 被引用数 (Scopus)

• High-electron-mobility AlGaN/AIN/GaN heterostructures grown on 100-mm-diam epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy

  Miyoshi, M., Ishikawa, H., Egawa, T., Asai, K., Mouri, M., Shibata, T., Tanaka, M. & Oda, O., 2004 9月 6, In: Applied Physics Letters. 85, 10, p. 1710-1712 3 p.

  研究成果: Article › 査読

  • vapor phase epitaxy 100%
  • electron mobility 98%
  • templates 89%
  • sapphire 81%
  • electron gas 30%
  94 被引用数 (Scopus)

• Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition

  Zhao, G. Y., Adachi, M., Ishikawa, H., Egawa, T., Umeno, M. & Jimbo, T., 2000 10月 2, In: Applied Physics Letters. 77, 14, p. 2195-2197 3 p.

  研究成果: Article › 査読

  • metalorganic chemical vapor deposition 100%
  • flow velocity 33%
  • profiles 22%
  • saturation 14%
  • temperature 6%
  26 被引用数 (Scopus)

• Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

  Sakai, M., Ishikawa, H., Egawa, T., Jimbo, T., Umeno, M., Shibata, T., Asai, K., Sumiya, S., Kuraoka, Y., Tanaka, M. & Oda, O., 2002 9月 1, In: Journal of Crystal Growth. 244, 1, p. 6-11 6 p.

  研究成果: Article › 査読

  • Hall mobility 100%
  • Vapor phase epitaxy 87%
  • Metallorganic vapor phase epitaxy 87%
  • Photoluminescence 80%
  • Vapor Phase Epitaxy 78%
  57 被引用数 (Scopus)

• Growth of GaN on 4-inch Si substrates with a thin AlGaN/AlN intermediate layer

  Ishikawa, H., Kato, M., Hao, M. S., Egawa, T. & Jimbo, T., 2003 5月 1, In: Default journal. p. Tu-P3.005

  研究成果: Article › 査読

  8 被引用数 (Scopus)