年別の研究成果
年別の研究成果
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A quantitative model for the blueshift induced by rapid thermal annealing in GaNAs/GaAs triple quantum wells
Sun, Y., Egawa, T. & Ishikawa, H., 2004 9月 1, In: Journal of Applied Physics. 96, 5, p. 2586-2591 6 p.研究成果: Article › 査読
5 被引用数 (Scopus) -
Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells
Hao, M., Ishikawa, H., Egawa, T., Shao, C. L. & Jimbo, T., 2003 6月 30, In: Applied Physics Letters. 82, 26, p. 4702-4704 3 p.研究成果: Article › 査読
45 被引用数 (Scopus) -
AlGaN solar-blind Schottky photodiodes fabricated on 4H-SiC
Jiang, H., Egawa, T. & Ishikawa, H., 2006 6月 15, In: IEEE Photonics Technology Letters. 18, 12, p. 1353-1355 3 p.研究成果: Article › 査読
15 被引用数 (Scopus) -
AlGaN/GaN dual-gate high electron mobility transistors on SiC substrates for high-power mixers
Shiojima, K., Makimura, T., Kosugi, T., Sugitani, S., Shigekawa, N., Ishikawa, H. & Egawa, T., 2005, In: Physica Status Solidi C: Conferences. 2, 7, p. 2623-2626 4 p.研究成果: Article › 査読
1 被引用数 (Scopus) -
Al composition dependent properties of quaternary AlInGaN Schottky diodes
Liu, Y., Jiang, H., Egawa, T., Zhang, B. & Ishikawa, H., 2006, In: Journal of Applied Physics. 99, 12, 123702.研究成果: Article › 査読
9 被引用数 (Scopus) -
Al0.27Ga0.73N/GaN distributed Bragg Reflector grown by atmospheric pressure MOCVD
Ishikawa, H., Nakada, N., Zhao, G. Y., Egawa, T., Jimbo, T. & .Umeno, M., 1998 9月 1, In: Default journal. p. Fr-15研究成果: Article › 査読