石川 博康

研究成果

年別の研究成果 1995 1998 2001 2003 2004 2018

• 156 Article
• 14 Conference article
• 6 Letter
• 3 Conference contribution
• 3 その他
  • 3 Paper

年別の研究成果

年別の研究成果

検索結果

• 2004

  High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission

  Liu, Y., Egawa, T., Ishikawa, H., Jiang, H., Zhang, B., Hao, M. & Jimbo, T., 2004 3月 15, In: Journal of Crystal Growth. 264, 1-3, p. 159-164 6 p.

  研究成果: Article › 査読

  • Epilayers 100%
  • Semiconductor quantum wells 91%
  • ultraviolet emission 71%
  • Growth temperature 70%
  • Photoluminescence 47%
  18 被引用数 (Scopus)

• Improved characteristics of GaN-based light emitting diode by distributed Bragg reflector grown on Si

  Ishikawa, H., Asano, K., Zhang, B., Egawa, T. & Jimbo, T., 2004 3月 1, In: Default journal. p. A10-4

  研究成果: Article › 査読

  21 被引用数 (Scopus)

• Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si

  Ishikawa, H., Asano, K., Zhang, B., Egawa, T. & Jimbo, T., 2004 9月 1, In: Physica Status Solidi (A) Applied Research. 201, 12, p. 2653-2657 5 p.

  研究成果: Article › 査読

  • Distributed Bragg reflectors 100%
  • Bragg reflectors 57%
  • Light emitting diodes 51%
  • Chemical Vapour Deposition 46%
  • light emitting diodes 41%
  35 被引用数 (Scopus)

• Improvement of DC and RF characteristics of AlGaN/GaN high electron mobility transistors by thermally annealed Ni/Pt/Au schottky gate

  Nanjo, T., Miura, N., Oishi, T., Suita, M., Abe, Y., Ozeki, T., Nakatsuka, S., Indue, A., Ishikawa, T., Matsuda, Y., Ishikawa, H. & Egawa, T., 2004 4月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 4 B, p. 1925-1929 5 p.

  研究成果: Article › 査読

  • High electron mobility transistors 100%
  • high electron mobility transistors 89%
  • direct current 67%
  • Electric breakdown 64%
  • Annealing 57%
  28 被引用数 (Scopus)

• Influence of growth temperature on quaternary AlInGaN epilayers for ultraviolet emission grown by metalorganic chemical vapor deposition

  Liu, Y., Egawa, T., Ishikawa, H., Zhang, B. & Hao, M., 2004 5月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 5 A, p. 2414-2418 5 p.

  研究成果: Article › 査読

  • Epilayers 100%
  • Growth temperature 94%
  • Metallorganic chemical vapor deposition 92%
  • ultraviolet emission 71%
  • metalorganic chemical vapor deposition 55%
  18 被引用数 (Scopus)

• MOVPE growth and characterization of high-Al-content AlGaN/GaN heterostructures on 100-mm-diameter sapphire substrates

  Miyoshi, M., Sakai, M., Ishikawa, H., Egawa, T., Jimbo, T., Tanaka, M. & Oda, O., 2004 12月 10, In: Journal of Crystal Growth. 272, 1-4 SPEC. ISS., p. 293-299 7 p.

  研究成果: Article › 査読

  • Metallorganic vapor phase epitaxy 100%
  • Metallorganic Chemical Vapour Deposition 91%
  • Carrier concentration 80%
  • Sheet resistance 78%
  • Sapphire 75%
  25 被引用数 (Scopus)

• MOVPE Growth and Characterization of High-Al-Content AlxGa1-xN/GaN Heterostructures for High-Power HEMTs on 100-mm-Diameter Sapphire Substrates

  Miyoshi, M., Sakai, M., Arulkumaran, S., Ishikawa, H., Egawa, T., Jimbo, T., Tanaka, M. & Oda, O., 2004 5月 1, In: Default journal.

  研究成果: Article › 査読

• Near-ideal Schottky contact on quaternary AlInGaN epilayer lattice-matched with GaN

  Liu, Y., Egawa, T., Jiang, H., Zhang, B., Ishikawa, H. & Hao, M., 2004 12月 13, In: Applied Physics Letters. 85, 24, p. 6030-6032 3 p.

  研究成果: Article › 査読

  • Schottky diodes 100%
  • electric contacts 83%
  • polarization 34%
  • high electron mobility transistors 32%
  • electrical measurement 30%
  12 被引用数 (Scopus)

• Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO₂, Si₃N₄, and silicon oxynitride

  Arulkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T. & Sano, Y., 2004 1月 26, In: Applied Physics Letters. 84, 4, p. 613-615 3 p.

  研究成果: Article › 査読

  • oxynitrides 100%
  • high electron mobility transistors 86%
  • passivity 77%
  • silicon 45%
  • electrical faults 16%
  192 被引用数 (Scopus)

• Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal

  Miura, N., Nanjo, T., Suita, M., Oishi, T., Abe, Y., Ozeki, T., Ishikawa, H., Egawa, T. & Jimbo, T., 2004 5月 1, In: Solid-State Electronics. 48, 5, p. 689-695 7 p.

  研究成果: Article › 査読

  • Schottky Contact 100%
  • Electron Mobility 73%
  • High electron mobility transistors 71%
  • Work Function 71%
  • high electron mobility transistors 63%
  153 被引用数 (Scopus)

• Thermal stability of InGaN multiple-quantum-well light-emitting diodes on an AIN/sapphire template

  Zhang, B., Egawa, T., Ishikawa, H., Liu, Y. & Jimbo, T., 2004 3月 15, In: Journal of Applied Physics. 95, 6, p. 3170-3174 5 p.

  研究成果: Article › 査読

  • templates 100%
  • thermal stability 93%
  • sapphire 91%
  • light emitting diodes 85%
  • quantum wells 83%
  32 被引用数 (Scopus)

• Three growth-temperature-dependent regions for nitrogen incorporation in GaNAs grown by chemical beam epitaxy

  Sun, Y., Yamamori, M., Egawa, T. & Ishikawa, H., 2004 5月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 5 A, p. 2409-2413 5 p.

  研究成果: Article › 査読

  • Chemical beam epitaxy 100%
  • Growth temperature 88%
  • epitaxy 54%
  • Nitrogen 50%
  • nitrogen 40%
  13 被引用数 (Scopus)

• Visible-blind metal-semiconductor-metal photodetectors based on undoped AlGaN/GaN high electron mobility transistor structure

  Jiang, H., Egawa, T., Ishikawa, H., Shao, C. & Jimbo, T., 2004 5月 15, In: Japanese Journal of Applied Physics, Part 2: Letters. 43, 5 B, p. L683-L685

  研究成果: Article › 査読

  • Photodetectors 100%
  • High electron mobility transistors 89%
  • high electron mobility transistors 79%
  • photometers 68%
  • Semiconductor materials 68%
  21 被引用数 (Scopus)

• Zn ion implantation along the c axis for formation of highly resistive GaN layers

  Oishi, T., Miura, N., Suita, M., Nanjo, T., Abe, Y., Ozeki, T., Ishikawa, H. & Egawa, T., 2004, In: Shinku/Journal of the Vacuum Society of Japan. 47, 4, p. 328-333 6 p.

  研究成果: Article › 査読

  Open Access

  • Ion implantation 100%
  • Ion Implantation 90%
  • Ions 68%
  • ion implantation 67%
  • Energy transfer 42%
• 2003

  Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells

  Hao, M., Ishikawa, H., Egawa, T., Shao, C. L. & Jimbo, T., 2003 6月 30, In: Applied Physics Letters. 82, 26, p. 4702-4704 3 p.

  研究成果: Article › 査読

  • pulling 100%
  • metalorganic chemical vapor deposition 82%
  • quantum wells 66%
  45 被引用数 (Scopus)

• Characterization of different-Al-content Al_xGa_1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire

  Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 3月 1, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21, 2, p. 888-894 7 p.

  研究成果: Article › 査読

  • Two dimensional electron gas 100%
  • Sapphire 76%
  • Heterojunctions 74%
  • High electron mobility transistors 65%
  • high electron mobility transistors 58%
  93 被引用数 (Scopus)

• Composition pulling effect in the InGaN/GaN multiple quantum well and its effect on photoluminescence

  Hao, M., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 5月 1, In: Default journal. p. Tu-P3.004

  研究成果: Article › 査読

• Correlation between electrical and surface properties of n-GaN on sapphire grown by metal-organic chemical vapor deposition

  Nakada, N., Mori, M., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 5月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 42, 5 A, p. 2573-2577 5 p.

  研究成果: Article › 査読

  • Organic chemicals 100%
  • Hall mobility 86%
  • Sapphire 86%
  • Atomic force microscopy 82%
  • Chemical vapor deposition 75%
  7 被引用数 (Scopus)

• Effects of temperature on leakage current in AlGaN/GaN HEMTs

  Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 5月 1, In: Default journal. p. Tu-P2.068

  研究成果: Article › 査読

• Electrical characteristics of AlGaN/GaN HEMTs on 4-in diameter sapphire substrate

  Arulkumaran, S., Miyoshi, M., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 8月 1, In: IEEE Electron Device Letters. 24, 8, p. 497-499 3 p.

  研究成果: Article › 査読

  • Hall Effect 100%
  • Sapphire 92%
  • High electron mobility transistors 80%
  • Drain Current 53%
  • Transconductance 53%
  20 被引用数 (Scopus)

• Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire

  Liu, Y., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 12月, In: Journal of Crystal Growth. 259, 3, p. 245-251 7 p.

  研究成果: Article › 査読

  • Epilayers 100%
  • Full width at half maximum 86%
  • Sapphire 78%
  • Blue shift 56%
  • Characterization (materials science) 51%
  31 被引用数 (Scopus)

• Growth and characterization of high-quality quaternry AlInGaN epilayers on aspphire

  Liu, Y., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 12月 1, In: J. Crystal Growth. 259, p. 245-251

  研究成果: Article › 査読

• Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE

  Miyoshi, M., Sakai, M., Ishikawa, H., Egawa, T., Jimbo, T., Tanaka, M. & Oda, O., 2003 10月, In: IEICE Transactions on Electronics. E86-C, 10, p. 2077-2081 5 p.

  研究成果: Article › 査読

  • Metallorganic vapor phase epitaxy 100%
  • Metallorganic Chemical Vapour Deposition 91%
  • Sapphire 75%
  • Heterojunctions 74%
  • Bending (forming) 52%
  4 被引用数 (Scopus)

• Growth of GaN on 4-inch Si substrates with a thin AlGaN/AlN intermediate layer

  Ishikawa, H., Kato, M., Hao, M. S., Egawa, T. & Jimbo, T., 2003 5月 1, In: Default journal. p. Tu-P3.005

  研究成果: Article › 査読

  8 被引用数 (Scopus)

• Highly resistive GaN layers formed by ion implantation of Zn along the c axis

  Oishi, T., Miura, N., Suita, M., Nanjo, T., Abe, Y., Ozeki, T., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 8月 1, In: Journal of Applied Physics. 94, 3, p. 1662-1666 5 p.

  研究成果: Article › 査読

  • ion implantation 100%
  • heavy ions 95%
  • ions 50%
  • damage 38%
  • dosage 36%
  44 被引用数 (Scopus)

• High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates

  Sakai, M., Asano, K., Arulkumaran, S., Ishikawa, H., Egawa, T., Jimbo, T., Shibata, T., Tanaka, M. & Oda, O., 2003 10月, In: IEICE Transactions on Electronics. E86-C, 10, p. 2071-2076 6 p.

  研究成果: Article › 査読

  • Sapphire 100%
  • Electron Mobility 89%
  • High electron mobility transistors 86%
  • Crystals 24%
  • Capacitance measurement 18%
  1 被引用数 (Scopus)

• High-quality quaternary AlInGaN epilayers on sapphire

  Liu, Y., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 11月 1, In: Physica Status Solidi (A) Applied Research. 200, 1, p. 36-39 4 p.

  研究成果: Article › 査読

  • Epilayers 100%
  • Sapphire 78%
  • Photoluminescence Spectrum 58%
  • Full width at half maximum 57%
  • Chemical Vapour Deposition 52%
  14 被引用数 (Scopus)

• High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

  Okita, H., Kaifu, K., Mita, J., Yamada, T., Sano, Y., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 11月, In: Physica Status Solidi (A) Applied Research. 200, 1, p. 187-190 4 p.

  研究成果: Article › 査読

  • Transconductance 100%
  • Gates (transistor) 92%
  • Sapphire 86%
  • Electron Mobility 77%
  • High electron mobility transistors 75%
  22 被引用数 (Scopus)

• High Trans-conductance AlGaN/GaN-HEMT with Recessed Gate on Sapphire Substrate

  Okita, H., Kaifu, K., Mita, J., Yamada, T., Sano, Y., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 5月 1, In: Default journal. p. Tu-A3.4

  研究成果: Article › 査読

• Low dark current GaN Schottky UV photodiodes using oxidised IrNi Schottky contact

  Jiang, H., Egawa, T., Ishikawa, H., Dou, Y. B., Shao, C. L. & Jimbo, T., 2003 11月 22, In: Electronics Letters. 39, 22, p. 1604-1606 3 p.

  研究成果: Article › 査読

  • Dark currents 100%
  • Photodiodes 82%
  • Metallizing 76%
  • Annealing 65%
  • Current density 64%
  7 被引用数 (Scopus)

• Low Noise and Low Distortion Performances of an AlGaN/GaN HFET

  Hirose, Y., Ikeda, Y., Ishii, M., Murata, T., Inoue, K., Tanaka, T., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 10月, In: IEICE Transactions on Electronics. E86-C, 10, p. 2058-2064 7 p.

  研究成果: Article › 査読

  • Epitaxial Film 100%
  • Leakage Current 92%
  • Heterojunctions 91%
  • Field effect transistors 75%
  • Epitaxial films 71%
  15 被引用数 (Scopus)

• Temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors

  Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 5月 5, In: Applied Physics Letters. 82, 18, p. 3110-3112 3 p.

  研究成果: Article › 査読

  • high electron mobility transistors 100%
  • leakage 80%
  • temperature dependence 62%
  • temperature 21%
  • activation energy 17%
  72 被引用数 (Scopus)

• Valence-Band Discontinuity at the AIN/Si Interface

  Ishikawa, H., Zhang, B., Egawa, T. & Jimbo, T., 2003 10月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 42, 10, p. 6413-6414 2 p.

  研究成果: Article › 査読

  • Valence bands 100%
  • discontinuity 49%
  • Conduction bands 47%
  • valence 40%
  • X ray photoelectron spectroscopy 33%
  22 被引用数 (Scopus)

• Valence Band Discontinuity at the AlN/Si Interface

  Ishikawa, H., Zhang, B., Egawa, T. & T.Jimbo, T. J., 2003 10月 1, In: Jpn. J. Appl. Phys.. 42, p. 6413-6414

  研究成果: Article › 査読

  22 被引用数 (Scopus)
• 2002

  Characteristics of BCl3 Plasma-Etched GaN Schottky Diodes

  Nakaji, M., Egawa, T., Ishikawa, H., Arulkumaran, S. & Jimbo, T., 2002 4月 1, In: Default journal. 41, p. L493-495

  研究成果: Article › 査読

  19 被引用数 (Scopus)

• Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC

  Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2002 10月 14, In: Applied Physics Letters. 81, 16, p. 3073-3075 3 p.

  研究成果: Article › 査読

  • high electron mobility transistors 100%
  • sapphire 82%
  • traps 36%
  • low currents 17%
  • high voltages 14%
  55 被引用数 (Scopus)

• Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition

  Egawa, T., Ohmura, H., Ishikawa, H. & Jimbo, T., 2002 7月 8, In: Applied Physics Letters. 81, 2, p. 292-294 3 p.

  研究成果: Article › 査読

  • metalorganic chemical vapor deposition 100%
  • templates 98%
  • sapphire 89%
  • light emitting diodes 83%
  • buffers 17%
  37 被引用数 (Scopus)

• Drain-current collapse in AlGaN/GaN HEMTs on sapphire and semi-insulating SiC substrates

  Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2002 9月 1, In: Default journal. p. E-2-3

  研究成果: Article › 査読

• GaN metal-semiconductor-metal UV photodetector with recessed electrodes

  Jiang, H., Okui, A., Ishikawa, H., Shao, C. L., Egawa, T. & Jimbo, T., 2002 1月 15, In: Japanese Journal of Applied Physics, Part 2: Letters. 41, 1 A/B, p. L34-L36

  研究成果: Article › 査読

  • Photodetectors 100%
  • photometers 68%
  • Semiconductor materials 68%
  • Electrodes 59%
  • Metals 49%
  6 被引用数 (Scopus)

• Growth and Characterization of Quaternary AlInGaN Epilayers on Sapphire

  Liu, Y., Mori, M., Ishikawa, H., Egawa, T. & Jimbo, T., 2002 3月 1, In: Default journal. p. 27a-ZM-29

  研究成果: Article › 査読

• Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

  Sakai, M., Ishikawa, H., Egawa, T., Jimbo, T., Umeno, M., Shibata, T., Asai, K., Sumiya, S., Kuraoka, Y., Tanaka, M. & Oda, O., 2002 9月 1, In: Journal of Crystal Growth. 244, 1, p. 6-11 6 p.

  研究成果: Article › 査読

  • Hall mobility 100%
  • Vapor phase epitaxy 87%
  • Metallorganic vapor phase epitaxy 87%
  • Photoluminescence 80%
  • Vapor Phase Epitaxy 78%
  57 被引用数 (Scopus)

• High-Quality GaN Growth on AlN/Sapphire Templates by MOVPE

  Sakai, M., Ishikawa, H., Egawa, T., Jimbo, T., Umeno, M., Shibata, T., Asai, K., Sumiya, S. & Kuraoka?2?, Y., 2002 1月 1, In: Inst. Phys. Conf. Ser.. p. 783-788

  研究成果: Article › 査読

• High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates

  Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2002 3月 25, In: Applied Physics Letters. 80, 12, p. 2186-2188 3 p.

  研究成果: Article › 査読

  • high electron mobility transistors 100%
  • temperature effects 88%
  • sapphire 82%
  • transconductance 42%
  • thermal stresses 20%
  95 被引用数 (Scopus)

• Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates

  Arulkumaran, S., Sakai, M., Egawa, T., Ishikawa, H., Jimbo, T., Shibata, T., Asai, K., Sumiya, S., Kuraoka, Y., Tanaka, M. & Oda, O., 2002 8月 5, In: Applied Physics Letters. 81, 6, p. 1131-1133 3 p.

  研究成果: Article › 査読

  • high electron mobility transistors 100%
  • templates 90%
  • sapphire 82%
  • transconductance 26%
  • cathodoluminescence 13%
  64 被引用数 (Scopus)

• Improved dc characteristics of AlGaN/ GaN high-electron-mobility transistors on AlN/sapphire templates

  Arulkumaran, S., Sakai, M., Egawa, T., Ishikawa, H., Jimbo, T., Shibata, T., Asai, K., Sumiya, S. & Kuraoka?2?, Y., 2002 8月 1, In: Appl. Phys. Lett.. 81, p. 1131-1133

  研究成果: Article › 査読

  64 被引用数 (Scopus)

• InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition

  Egawa, T., Zhang, B., Nishikawa, N., Ishikawa, H., Jimbo, T. & Umeno, M., 2002 1月 1, In: Journal of Applied Physics. 91, 1, p. 528-530 3 p.

  研究成果: Article › 査読

  • metalorganic chemical vapor deposition 100%
  • light emitting diodes 83%
  • quantum wells 81%
  • output 24%
  • sapphire 17%
  64 被引用数 (Scopus)

• MOCVD growth of high reflective GaN/AlGaN distributed Bragg reflectors

  Nakada, N., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2002 4月, In: Journal of Crystal Growth. 237-239, 1 4 II, p. 961-967 7 p.

  研究成果: Article › 査読

  • Distributed Bragg reflectors 100%
  • Metallorganic chemical vapor deposition 81%
  • Reflectivity 59%
  • Bragg reflectors 57%
  • metalorganic chemical vapor deposition 49%
  22 被引用数 (Scopus)
• 2001

  Back-illuminated GaN metal-semiconductor-metal UV photodetector with high internal gain

  Jiang, H., Nakata, N., Zhao, G. Y., Ishikawa, H., Shao, C. L., Egawa, T., Jimbo, T. & Umeno, M., 2001 5月 15, In: Japanese Journal of Applied Physics, Part 2: Letters. 40, 5 B, p. L505-L507

  研究成果: Article › 査読

  • Photodetectors 100%
  • photometers 68%
  • Semiconductor materials 68%
  • Lighting 61%
  • illumination 58%
  43 被引用数 (Scopus)

• Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire

  Egawa, T., Zhao, G. Y., Ishikawa, H., Umeno, M. & Jimbo, T., 2001 3月 1, In: IEEE Transactions on Electron Devices. 48, 3, p. 603-608 6 p.

  研究成果: Article › 査読

  • Electron gas 100%
  • Electron Gas 86%
  • Sapphire 73%
  • Heterojunctions 72%
  • Electron Mobility 65%
  71 被引用数 (Scopus)

• Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement

  Jiang, H., Zhao, G. Y., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2001 1月 15, In: Journal of Applied Physics. 89, 2, p. 1046-1052 7 p.

  研究成果: Article › 査読

  • excitons 100%
  • reflectance 89%
  • energy 37%
  • line shape 24%
  • metalorganic chemical vapor deposition 24%
  56 被引用数 (Scopus)