年別の研究成果
年別の研究成果
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2003
High-bright InGaN multiple-quantum-well blue light-emitting diodes on Si (111) using AlN/GaN multilayers with a thin AlN/AlGaN buffer layer
Zhang, B., Egawa, T., Ishikawa, H., Liu, Y. & Jimbo, T., 2003 3月 1, In: Japanese Journal of Applied Physics, Part 2: Letters. 42, 3 A, p. L226-L228研究成果: Letter › 査読
59 被引用数 (Scopus) -
Suppression of crack generation in GaN/AlGaN distributed Bragg reflector on sapphire by the insertion of GaN/AlGaN superlattice grown by metal-organic chemical vapor deposition
Nakada, N., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 2月 15, In: Japanese Journal of Applied Physics, Part 2: Letters. 42, 2 B, p. L144-L146研究成果: Letter › 査読
35 被引用数 (Scopus) -
2002
Characteristics of BCl3 plasma-etched GaN Schottky diodes
Nakaji, M., Egawa, T., Ishikawa, H., Arulkumaran, S. & Jimbo, T., 2002 4月 15, In: Japanese Journal of Applied Physics, Part 2: Letters. 41, 4, p. L493-L495研究成果: Letter › 査読
21 被引用数 (Scopus) -
Improved characteristics of blue and green InGaN-based light-emitting diodes on Si grown by metalorganic chemical vapor deposition
Egawa, T., Moku, T., Ishikawa, H., Ohtsuka, K. & Jimbo, T., 2002 6月 15, In: Japanese Journal of Applied Physics, Part 2: Letters. 41, 6 B, p. L663-L664研究成果: Letter › 査読
107 被引用数 (Scopus) -
2001
High-transconductance AlGaN/GaN high-electron-mobility transistors on semi-insulating silicon carbide substrate
Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2001 10月 15, In: Japanese Journal of Applied Physics, Part 2: Letters. 40, 10 B, p. L1081-L1083研究成果: Letter › 査読
11 被引用数 (Scopus) -
Suppression of GaInN/GaN multi-quantum-well decomposition during growth of light-emitting-diode structure
Ishikawa, H., Nakada, N., Mori, M., Zhao, G. Y., Egawa, T., Jimbo, T. & Umeno, M., 2001 11月 1, In: Japanese Journal of Applied Physics, Part 2: Letters. 40, 11 A, p. L1170-L1172研究成果: Letter › 査読
11 被引用数 (Scopus)