西川 宏之

研究成果

年別の研究成果 1989 1994 1995 1996 1997 2007 2009 2010 2011 2012 2022

• 139 Article
• 17 Conference contribution
• 9 Conference article
• 8 Paper
• 1 その他
  • 1 Review article

年別の研究成果

年別の研究成果

検索結果

• 1996

  Laser-power dependence of absorption changes in Ge-doped SiO2 glass induced by a KrF excimer laser

  Fujimaki, M., Yagi, K., Ohki, Y., Nishikawa, H. & Awazu, K., 1996 4月 1, In: Physical Review B,. 53, p. 9859-9862

  研究成果: Article › 査読

  29 被引用数 (Scopus)

• Photoluminescence study on point defects in buried SiO₂ film formed by implantation of oxygen

  Seol, K. S., Ieki, A., Ohki, Y., Nishikawa, H. & Tachimori, M., 1996 1月 1, In: Journal of Applied Physics. 79, 1, p. 412-416 5 p.

  研究成果: Article › 査読

  • point defects 100%
  • implantation 93%
  • photoluminescence 74%
  • oxygen 63%
  • excitation 25%
  38 被引用数 (Scopus)

• Photoluminescence study on point defects in buried SiO2 film formed by implantation of oxygen

  Seol, K. S., Ieki, A., Ohki, Y., Nishikawa, H. & Tachimori, M., 1996 1月 1, In: Journal of Applied Physics. 79, p. 412-416

  研究成果: Article › 査読

  38 被引用数 (Scopus)

• Plasma-induced damage of silicon thermal oxides in the VLSI process

  Nishikawa, H., Watanabe, E., Ito, D. & Tochikubo, F., 1996 1月 1, In: Memoirs of Faculty of Engineering. p. 17-24

  研究成果: Article › 査読

• Visible photoluminescence from Si clusters in γ-irradiated amorphous SiO2

  Nishikawa, H., Watanabe, E., Ito, D., Sakurai, Y., Nagasawa, K. & Ohki, Y., 1996 9月 1, In: Journal of Applied Physics. 80, p. 3513-3517

  研究成果: Article › 査読

  119 被引用数 (Scopus)
• 1995

  Nature of photoluminescence involving transitions from ground to 4fn-15d1 states in rare-earth-doped glasses

  Yokokawa, T., Inokuma, H., Ohki, Y., Nishikawa, H. & Hama, Y., 1995 4月 1, In: Journal of Applied Physics. 77, p. 4013-4017

  研究成果: Article › 査読

  18 被引用数 (Scopus)

• Nature of photoluminescence involving transitions from the ground to 4 _f^n-1 5d¹ states in rare-earth-doped glasses

  Yokokawa, T., Inokuma, H., Ohki, Y., Nishikawa, H. & Hama, Y., 1995 12月 1, In: Journal of Applied Physics. 77, 8, p. 4013-4017 5 p.

  研究成果: Article › 査読

  • rare earth elements 100%
  • photoluminescence 81%
  • glass 67%
  • excimer lasers 58%
  • silicon dioxide 44%
  18 被引用数 (Scopus)

• Optical and Electrical Studies on Point Defects in Amorphous SiO2 Films

  Nishikawa, H., Watanabe, E. & Ito, D., 1995 1月 1, In: Memoirs of Faculty of Engineering. p. 5031-5036

  研究成果: Article › 査読

• Paramagnetic Defect Centers Induced by Excimer Lasers, γ-Rays, and Mechanical Fracturing in Amorphous SiO2

  Nishikawa, H. & Ohki, Y., 1995 1月 1, In: Defect and Diffusion Forum. 123-124, p. 123-134

  研究成果: Article › 査読

• Photoluminescence and electron spin-resonance studies of defects in ion-implanted thermal SiO2 films

  Nishikawa, H., Fukui, H., Watanabe, E., Ito, D., Takiyamal, M., Ieki, A. & Ohki, Y., 1995 1月 1, In: Materials Science Forum. 196-201, p. 97-102

  研究成果: Article › 査読

  1 被引用数 (Scopus)

• Photoluminescence study of defect in ion-implanted thermal SiO2 films

  Nishikawa, H., Watanabe, E., Ito, D., Takiyama, M., A.Ieki, A. I. & Ohki, Y., 1995 7月 1, In: Default journal. 78, p. 842-846

  研究成果: Article › 査読

  79 被引用数 (Scopus)

• Photoluminescence study of defects in ion-implanted thermal SiO₂ films

  Nishikawa, H., Watanabe, E., Ito, D., Takiyama, M., Ieki, A. & Ohki, Y., 1995 12月 1, In: Journal of Applied Physics. 78, 2, p. 842-846 5 p.

  研究成果: Article › 査読

  • photoluminescence 100%
  • defects 79%
  • ions 66%
  • ion implantation 29%
  • oxygen 28%
  79 被引用数 (Scopus)

• Photoluminescence Study on Point Defects in SIMOX Buried SiO2 Film

  S.Seol, K., Ieki, A., Ohki, Y., Nishikawa, H. & Tachimori, M., 1995 1月 1, In: Materials Science Forum. 196-201, p. 1909-1914

  研究成果: Article › 査読

• Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition

  Ishii, K., Isshiki, D., Ohki, Y., Nishikawa, H. & Takiyama, M., 1995 1月 1, In: Japanese Journal of Applied Physics. 34, p. 205-211

  研究成果: Article › 査読

  15 被引用数 (Scopus)

• Role of point defects in dielectric breakdown of sio₂formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane

  Ishii, K., Isshiki, D., Ohki, Y., Nishikawa, H. & Takiyama, M., 1995 1月, In: Japanese Journal of Applied Physics. 34, 1, p. 205-211 7 p.

  研究成果: Article › 査読

  • Oxygen vacancies 100%
  • Point defects 99%
  • Plasma enhanced chemical vapor deposition 92%
  • Electric breakdown 73%
  • Luminescence 63%
  15 被引用数 (Scopus)
• 1994

  Decay kinetics of the 4.4-eV photoluminescence associated with the two states of oxygen-deficient type defect in amorphous SiO2

  Nishikawa, H., Watanabe, E., Ito, D. & Ohki, Y., 1994 3月 1, In: Physical Review Letters. 72, p. 2101-2104

  研究成果: Article › 査読

  151 被引用数 (Scopus)

• Decay kinetics of the 4.4-eV photoluminescence associated with the two states of oxygen-deficient-type defect in amorphous SiO2

  Nishikawa, H., Watanabe, E., Ito, D. & Ohki, Y., 1994, In: Physical Review Letters. 72, 13, p. 2101-2104 4 p.

  研究成果: Article › 査読

  • photoluminescence 100%
  • oxygen 85%
  • kinetics 85%
  • decay 80%
  • defects 79%
  151 被引用数 (Scopus)

• Gamma-Ray-Induced Loss of Er3+ -Doped Silica-Core Optical Fiber

  Koyama, T., Dohguchi, N., Ohki, Y., Nishikawa, H., Kusama, Y. & Seguchi, T., 1994 7月 1, In: Japanese Journal of Applied Physics. 33, p. 3937-3941

  研究成果: Article › 査読

  1 被引用数 (Scopus)

• Gamma-Ray-Induced Loss of E r³⁺-Doped Silica-Core Optical Fiber

  Koyama, T., Dohguchi, N., Ohki, Y., Nishikawa, H., Kusama, Y. & Seguchi, T., 1994 7月, In: Japanese Journal of Applied Physics. 33, 7R, p. 3937 1 p.

  研究成果: Article › 査読

  • Gamma rays 100%
  • Optical fibers 83%
  • Silica 82%
  • silicon dioxide 61%
  • optical fibers 60%
  1 被引用数 (Scopus)

• Kinetics of enhanced photogeneration of E' centers in oxygen-deficient silica

  Nishikawa, H., Watanabe, E., Ito, D. & Ohki, Y., 1994 1月 1, In: Journal of Non-Crystalline Solids. 179, p. 179-184

  研究成果: Article › 査読

  23 被引用数 (Scopus)

• Kinetics of enhanced photogeneration of E′ centers in oxygen-deficient silica

  Nishikawa, H., Watanabe, E., Ito, D. & Ohki, Y., 1994 11月 4, In: Journal of Non-Crystalline Solids. 179, C, p. 179-184 6 p.

  研究成果: Article › 査読

  • Excimer lasers 100%
  • Absorption spectra 94%
  • Excimer 70%
  • Silica 66%
  • Oxygen 52%
  23 被引用数 (Scopus)

• Optical characteristics of SiO2 formed by plasma-enhanced chemical-vapor deposition of tetraethoxysilane

  Ishii, K., Ohki, Y. & Nishikawa, H., 1994 11月 1, In: Journal of Applied Physics. 76, p. 5418-5422

  研究成果: Article › 査読

  20 被引用数 (Scopus)

• Optical characteristics of SiO₂ formed by plasma-enhanced chemical-vapor deposition of tetraethoxysilane

  Ishii, K., Ohki, Y. & Nishikawa, H., 1994 12月 1, In: Journal of Applied Physics. 76, 9, p. 5418-5422 5 p.

  研究成果: Article › 査読

  • vapor deposition 100%
  • decay 74%
  • luminescence 66%
  • exponential functions 49%
  • synchrotron radiation 38%
  20 被引用数 (Scopus)

• Point defects in high purity silica induced by high-dose gamma irradiation

  Sakurai, Y., Nagasawa, K., Nishikawa, H. & Ohki, Y., 1994, In: Journal of Applied Physics. 75, 3, p. 1372-1377 6 p.

  研究成果: Article › 査読

  • point defects 100%
  • purity 90%
  • silicon dioxide 80%
  • dosage 69%
  • irradiation 67%
  40 被引用数 (Scopus)
• 1993

  Correlation of preexisting diamagnetic defect centers with induced paramagnetic defect centers by ultraviolet or vacuum ultraviolet photons in high-purity silica glasses

  Nishikawa, H., Nakamura, R., Ohki, Y. & Hama, Y., 1993 12月 1, In: Physical Review B. 48, p. 15584-15594

  研究成果: Article › 査読

  55 被引用数 (Scopus)

• Correlation of preexisting diamagnetic defect centers with induced paramagnetic defect centers by ultraviolet or vacuum-ultraviolet photons in high-purity silica glasses

  Nishikawa, H., Nakamura, R., Ohki, Y. & Hama, Y., 1993 1月 1, In: Physical Review B. 48, 21, p. 15584-15594 11 p.

  研究成果: Article › 査読

  • silica glass 100%
  • purity 75%
  • vacuum 55%
  • photons 48%
  • defects 48%
  55 被引用数 (Scopus)

• Enhanced photogeneration of E′ centers from neutral oxygen vacancies in the presence of hydrogen in high-purity silica glass

  Nishikawa, H., Nakamura, R., Ohki, Y. & Hama, Y., 1993 1月 1, In: Physical Review B. 48, 5, p. 2968-2973 6 p.

  研究成果: Article › 査読

  • silica glass 100%
  • purity 75%
  • silicon dioxide 66%
  • hydrogen 53%
  • oxygen 52%
  25 被引用数 (Scopus)

• Enhaunced photogeneration of E' centers from neutral oxygen vacancies in the presence of hydrogen in high-purity silica glass

  Nishikawa, H., Nakamura, R., Ohki, Y. & Hama, Y., 1993 8月 1, In: Physical Review B. 48, p. 2968-2973

  研究成果: Article › 査読

  25 被引用数 (Scopus)

• Various bonding forms of OH groups in hydrogen-treated silica

  Kitagawa, M., Nishikawa, H., Ohki, Y. & Hama, Y., 1993, In: Journal of Applied Physics. 74, 4, p. 2378-2380 3 p.

  研究成果: Article › 査読

  • silicon dioxide 100%
  • hydrogen 80%
  • oxygen 78%
  • silica glass 74%
  • infrared absorption 66%
  12 被引用数 (Scopus)

• Various bonding forms of OH groups in hydrogen-treated silica

  Kitagawa, M., Nishikawa, H. & Ohki, Y., 1993 8月 1, In: Journal of Applied Physics. 74, p. 2378-2380

  研究成果: Article › 査読

  12 被引用数 (Scopus)
• 1992

  Characterization od ClOx radicals in vacuum-ultraviolet-irradiated high-purity silica

  Nishikawa, H., Nakamura, R., Ohki, Y., Nagasawa, K. & Hama, Y., 1992 10月 1, In: The American Physical Society. 46, p. 8073-8079

  研究成果: Article › 査読

  15 被引用数 (Scopus)

• Characterization of ClOx radicals in vacuum-ultraviolet-irradiated high-purity silica glass

  Nishikawa, H., Nakamura, R., Ohki, Y., Nagasawa, K. & Hama, Y., 1992 1月 1, In: Physical Review B. 46, 13, p. 8073-8079 7 p.

  研究成果: Article › 査読

  • silica glass 100%
  • electron paramagnetic resonance 79%
  • purity 75%
  • ultraviolet lasers 62%
  • chlorine 61%
  15 被引用数 (Scopus)

• Photoluminescence from defect centers in high-purity silica glasses observed under 7.9-eV excitation

  Nishikawa, H., Shiroyama, T., Nakamura, R., Ohki, Y., Nagasawa, K. & Hama, Y., 1992, In: Physical Review B. 45, 2, p. 586-591 6 p.

  研究成果: Article › 査読

  • silica glass 100%
  • purity 75%
  • photoluminescence 61%
  • defects 48%
  • silicon dioxide 47%
  406 被引用数 (Scopus)
• 1991

  Effect of high-temperature treatment on optical-absorption bands in amorphous SiO₂

  Dohguchi, N., Munekuni, S., Nishikawa, H., Ohki, Y. & Nagasawa, K., 1991 12月 1, In: Journal of Applied Physics. 70, 5, p. 2788-2790 3 p.

  研究成果: Article › 査読

  • optical absorption 100%
  • absorption spectra 87%
  • oxygen 70%
  • molecules 37%
  • linkages 27%
  3 被引用数 (Scopus)

• Effect of high-temperature treatment on optical-absorption bands in amorphous SiO2

  Dohguchi, N., Munekuni, S., Nishikawa, H., Ohki, Y. & Nagasawa, K., 1991 9月 1, In: Journal of Applied Physics. 70, p. 2788-2790

  研究成果: Article › 査読

  3 被引用数 (Scopus)

• Si - O - Si strained bond and paramagnetic defect centers induced by mechanical fracturing in amorphous SiO₂

  Munekuni, S., Dohguchi, N., Nishikawa, H., Ohki, Y., Nagasawa, K. & Hama, Y., 1991, In: Journal of Applied Physics. 70, 9, p. 5054-5062 9 p.

  研究成果: Article › 査読

  • fracturing 100%
  • defects 42%
  • cleavage 31%
  • preforms 18%
  • glass 17%
  25 被引用数 (Scopus)

• Si-O-Si strained bond and paramagnetic defect centers induced by mechanical fracturing in amorphous SiO2

  Munekuni, S., Nohguchi, N., Nishikawa, H., Ohki, Y., Nagasawa, K. & Hama, Y., 1991 11月 1, In: Journal of Applied Physics. 70, p. 5054-5062

  研究成果: Article › 査読

  25 被引用数 (Scopus)
• 1990

  Generation mechanism of photoinduced paramagnetic centers from preexisting precursors in high-purity silicas

  Nishikawa, H., Nakamura, R., Tohmon, R., Ohki, Y., Sakurai, Y., Nagasawa, K. & Hama, Y., 1990 1月 1, In: Physical Review B. 41, 11, p. 7828-7834 7 p.

  研究成果: Article › 査読

  • purity 100%
  • silicon dioxide 89%
  • oxygen 28%
  • defects 25%
  • excimer lasers 23%
  93 被引用数 (Scopus)
• 1989

  Defects and optical absorption bands induced by surplus oxygen in high-purity synthetic silica

  Nishikawa, H., Tohmon, R., Ohki, Y., Nagasawa, K. & Hama, Y., 1989, In: Journal of Applied Physics. 65, 12, p. 4672-4678 7 p.

  研究成果: Article › 査読

  • purity 100%
  • optical absorption 99%
  • silicon dioxide 89%
  • absorption spectra 86%
  • linkages 78%
  131 被引用数 (Scopus)