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  • 2 同様のプロファイル
High electron mobility transistors Engineering & Materials Science
Buffer layers Engineering & Materials Science
Surface states Engineering & Materials Science
high electron mobility transistors Physics & Astronomy
Field effect transistors Engineering & Materials Science
Passivation Engineering & Materials Science
buffers Physics & Astronomy
Electric breakdown Engineering & Materials Science

ネットワーク 最近の共同研究。丸をクリックして詳細を確認しましょう。

研究成果 1980 2019

  • 1595 引用
  • 26 h指数
  • 157 Article
  • 61 Conference contribution
  • 4 Chapter
公開
Impact ionization
Drain current
High electron mobility transistors
Buffer layers
high electron mobility transistors
1 引用 (Scopus)

Analysis of Breakdown Voltages in AlGaN/GaN HEMTs with Low-Double Passivation Layers

Nakamura, K., Hanawa, H. & Horio, K., 2019 6 1, : : IEEE Transactions on Device and Materials Reliability. 19, 2, p. 298-303 6 p., 8660523.

研究成果: Article

High electron mobility transistors
Electric breakdown
Passivation
Permittivity
aluminum gallium nitride

Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title

Nakamura, K., Hanawa, H. & Horio, K., 2018 11 27, 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018. Institute of Electrical and Electronics Engineers Inc., p. 247-250 4 p. 8551096

研究成果: Conference contribution

High electron mobility transistors
high electron mobility transistors
Passivation
passivity
breakdown

Analysis of Breakdown Characteristics of AlGaN/GaN HEMTs with Double Passivation Layers

Nakano, K., Hanawa, H. & Horio, K., 2018 5 1, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018. Institute of Electrical and Electronics Engineers Inc., p. 131-134 4 p. 8734668. (2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018).

研究成果: Conference contribution

High electron mobility transistors
Passivation
Electric breakdown
Drain current
Permittivity

Analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with a high-k passivation layer

Kabemura, T., Hanawa, H. & Horio, K., 2018 1 1, TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. Laudon, M., Case, F., Romanowicz, B. & Case, F. (版). TechConnect, 巻 4. p. 28-31 4 p.

研究成果: Conference contribution

High electron mobility transistors
Passivation
Electric fields
Electric breakdown
Permittivity