上野 和良

研究成果

年別の研究成果 1985 1997 1998 2009 2010 2012 2017 2019 2022

• 994 被引用数
• 18 h-index
• 100 Article
• 22 Conference contribution
• 10 Conference article
• 4 Editorial
• 1 その他
  • 1 Paper

年別の研究成果

年別の研究成果

検索結果

• 2007

  Time-dependent dielectric breakdown characterization of 90- and 65-nm-Node Cu/SiOC interconnects with via plugs

  Ueno, K., Kameyama, A., Matsumoto, A., Iguchi, M., Takewaki, T., Oshida, D., Toyoshima, H., Kawahara, N., Asada, S., Suzuki, M. & Oda, N., 2007 4月 5, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46, 4 A, p. 1444-1451 8 p.

  研究成果: Article › 査読

  • Electric breakdown 100%
  • plugs 98%
  • breakdown 68%
  • characterization 49%
  • life (durability) 32%
  8 被引用数 (Scopus)
• 2006

  A Novel CoWP Cap Integration for Porous Low-k/Cu Interconnects with NH3 Plasma Treatment and Low-k Top (LKT) Dielectric Structure

  Kawahara, N., Tagami, M., Withers, B., Kakuhara, Y., Imura, H., Ohto, K., Taiji, T., Arita, K., Kurokawa, T., Nagase, M., Maruyama, T., Oda, N., Hayashi, Y., Jacobs, J., M.Sakurai, M. S., Sekine, M. & Ueno, K., 2006 6月 6, In: Proc. 2006 Int. Interconnect Tech. Conf.. p. 152-154

  研究成果: Article › 査読

  6 被引用数 (Scopus)

• Highly Reliable Interface of Self-Aligned CuSiN Process with Low-k SiC Barrier Dielectric (k=3.5) for 65nm Node and Beyond

  Usami, T., Ide, T., Kakuhara, Y., Ajima, Y., Ueno, K., Maruyama, T., Yu, Y., Apen, E., Chattopadhyay, K., Schravendijk, B. V., Oda, N. & Sekine, M., 2006 6月 6, In: Proc. 2006 Int. Interconnect Tech. Conf.. p. 125-127

  研究成果: Article › 査読

  20 被引用数 (Scopus)

• Key mechanism for improved EM lifetime of CoWP capped Cu interconnects

  Kakuhara, Y., Kawahara;K.Ueno, Y. KN., N.Oda, N. O. & Ueno, K., 2006 9月 13, In: Entended Abstracts of the 2006 Int. Conf, on Solid State Dev. and Mat.. p. 144-145

  研究成果: Article › 査読
• 2005

  Reliability of damascene copper interconnects (Invited)

  K.Ueno, K. U., T.Ishigamil, T. I., Y.Kakuhara, Y. K., M.Kawano, M. K. & Ueno, K., 2005 5月 1, In: Proceedings of ULSI Process Integration IV. 2005, p. 408-418

  研究成果: Article › 査読

  1 被引用数 (Scopus)
• 2003

  3-Dimensional elastic-plastic finite element analysis of stress-induced voiding in Cu damascene interconnects of ultra-large-scale integrated circuits

  Saitoh, T., Kawano, M. & Ueno, K., 2003 6月, In: Nippon Kikai Gakkai Ronbunshu, A Hen/Transactions of the Japan Society of Mechanical Engineers, Part A. 69, 6, p. 964-971 8 p.

  研究成果: Article › 査読

  Open Access

  • Integrated circuits 100%
  • Plastics 79%
  • Linewidth 68%
  • Finite element method 67%
  • Strain 37%

• Characterization of chemically-deposited NiB and NiWB thin films as a capping layer for ULSI application

  Osaka, T., Takano, N., Kurokawa, T., Kaneko, T. & Ueno, K., 2003 6月 2, In: Surface and Coatings Technology. 169-170, p. 124-127 4 p.

  研究成果: Article › 査読

  • Sheet resistance 100%
  • Thin films 91%
  • Sheet Resistance 87%
  • Thermodynamic stability 74%
  • electroless deposition 68%
  53 被引用数 (Scopus)

• Stress relaxation in dual-damascene Cu interconnects to suppress stress-induced voiding

  M.Kawano, M. K., T.Fukase, T. F., Y.Yamamoto, Y. Y., T.Ito, T. I., S.Yokogawa, S. Y., H.Tsuda, H. T., Y.Kunimune, Y. K., T.Saitoh, T. S., K.Ueno, K. U. & Ueno, K., 2003 6月 1, In: Proc. 2003 International Interconnect Technology conference. p. 210-212

  研究成果: Article › 査読

  22 被引用数 (Scopus)
• 2002

  Electroless nickel ternally alloy deposition on SiO2 for application to diffusion barrier layer in copper interconnect technology

  T.Osaka, T. O., N.Takano, N. T., T.Kurokawa, T. K., T.Kaneko, T. K., K.Ueno, K. U. & Ueno, K., 2002 11月 1, In: Journal of the Electrochemical Society. 149, p. 573-578

  研究成果: Article › 査読

• Electroless nickel ternary alloy deposition on SiO₂ for application to diffusion barrier layer in copper interconnect technology

  Osaka, T., Takano, N., Kurokawa, T., Kaneko, T. & Ueno, K., 2002 11月 1, In: Journal of the Electrochemical Society. 149, 11, p. C573-C578

  研究成果: Article › 査読

  • Ternary alloys 100%
  • Diffusion barriers 97%
  • Nickel alloys 83%
  • Diffusion Barrier 83%
  • Self assembled monolayers 77%
  56 被引用数 (Scopus)

• Fabrication of electroless NiRe barrier layer on SiO2 without sputtered seed layer

  T.Osaka, T. O., N.Takano, N. T., T.Kurokawa, T. K., K.Ueno, K. U. & Ueno, K., 2002 1月 1, In: Electrochemical and Solid State Letters. 5(1), p. 7-10

  研究成果: Article › 査読

• Fabrication of electroless NiReP barrier layer on SiO₂ without sputtered seed layer

  Osaka, T., Takano, N., Kurokawa, T. & Ueno, K., 2002 1月 1, In: Electrochemical and Solid-State Letters. 5, 1, p. C7-C10

  研究成果: Article › 査読

  • Self assembled monolayers 100%
  • barrier layers 69%
  • electroless deposition 68%
  • Seed 66%
  • Electroless plating 65%
  45 被引用数 (Scopus)
• 2001

  A high reliability Cu dual-damascene interconnection direct- contact via structure(Invited)

  K.Ueno, K. U., M.Suzuki, M. S., A.Mtsumoto, A. M., K.Motoyama, K. M., N.Oda, N. O., H.Miyamoto, H. M., S.Ssaito, S. S. & Ueno, K., 2001 7月 1, In: Stress-Induced Phenomena in Metallization, AIP Conf. Proceedings. 612, p. 49-60

  研究成果: Article › 査読

• Characterization of eletroless deposited Ni alloy films diffusion barrier material

  T.Kurokawa, T. K., N.Tankano, N. T., T.Osaka, T. O., K.Ueno, K. U. & Ueno, K., 2001 9月 1, In: Frontiers of Surface Engineering 2001 Conference and Exhibition.

  研究成果: Article › 査読

• Current status of copper multilevel interconnects (Invited)

  K.Ueno, K. U., M.Iguchi, M. I., T.Yokoyama, T. Y., N.Oda, N. O., H.Miyamoto, H. M., Y.Matsubara, Y. M., T.Horiuchi, T. H., S.Saito, S. S. & Ueno, K., 2001 3月 1, In: Proceedings of 1st International Conference on Semiconductor Technology. 2, p. 1-8

  研究成果: Article › 査読
• 2000

  A high reliability copper duel-damascene interconnection with direct-contact via structure

  K.Ueno, K. U., M.Suzuki, M. S., A.Matsumoto, A. M., K.Motoyama, K. M., N.Ito, N. I., K.Arita, K. A., Y.Tsuchiya, Y. T., T.Wake, T. W., A.Kubo, A. K., K.Sugai, K. S., N.Oda, N. O., H.Miyamoto, H. M., S.Saito, S. S. & Ueno, K., 2000 12月 1, In: 2000 IEDM Technical Digests. p. 265-268

  研究成果: Article › 査読

  18 被引用数 (Scopus)
• 1999

  Low resistance copper via technology (Invited)

  K.Ueno, K. U., V.M.Donnelly, V. M. D., Y.Tsuchiya, Y. T., H.Aoki, H. A. & Ueno, K., 1999 4月 5, In: Abstract of Symposium on Advanced Interconnects and Contacts.

  研究成果: Article › 査読

• Microstructure of electroplated Cu films

  H.Okabayashi, H. O., K.Ueno, K. U., N.Ito, N. I., S.Saito, S. S., E.Nomura, E. N. & Ueno, K., 1999 10月 1, In: Advanced Metallization Conference in 1999.

  研究成果: Article › 査読

• Seed layer dependence of room-temperature recrystallization elecroplated copper films

  K.Ueno, K. U., T.Ritzdorf, T. R., S.Grace, S. G. & Ueno, K., 1999 11月 1, In: Journal of Applied Physics. 86, p. 4930-4935

  研究成果: Article › 査読

  63 被引用数 (Scopus)

• Seed layer dependence of room-temperature recrystallization in electroplated copper films

  Ueno, K., Ritzdorf, T. & Grace, S., 1999 11月 1, In: Journal of Applied Physics. 86, 9, p. 4930-4935 6 p.

  研究成果: Article › 査読

  • seeds 100%
  • copper 77%
  • textures 69%
  • room temperature 60%
  • annealing 35%
  63 被引用数 (Scopus)
• 1998

  0.7μm pitch double level Al interconnection technology for DRAMs using SiO2 mask Al etching and PECVD SiOF

  T.Yokoyama, T. Y., Y.Yamada, Y. Y., K.Kishimoto, K. K., T.Usami, T. U., H, H., Kasamoto, K., K.Ueno, K. U., H.Gomi, H. G. & Ueno, K., 1998 3月 1, In: Japanese Journal of Applied Physics. 37, p. 1440-1444

  研究成果: Article › 査読

  28 被引用数 (Scopus)

• A 0.7-μm-pitch double level Al interconnection technology for 1-Gbit DRAMs using SiO₂ mask Al etching and plasma enhanced chemical vapor deposition SiOF

  Yokoyama, T., Yamada, Y., Kishimoto, K., Usami, T., Kawamoto, H., Ueno, K. & Gomi, H., 1998 3月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 37, 3 SUPPL. B, p. 1140-1144 5 p.

  研究成果: Article › 査読

  • Plasma enhanced chemical vapor deposition 100%
  • random access memory 81%
  • Etching 75%
  • Masks 66%
  • masks 60%

• Cleaning of CHF₃ plasma-etched SiO₂/SiN/Cu via structures using a hydrogen plasma, an oxygen plasma, and hexafluoroacetylacetone vapors

  Ueno, K., Donnelly, V. M. & Tsuchiya, Y., 1998 11月, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16, 6, p. 2986-2995 10 p.

  研究成果: Article › 査読

  • oxygen plasma 100%
  • hydrogen plasma 97%
  • cleaning 84%
  • Cleaning 80%
  • Plasmas 78%
  23 被引用数 (Scopus)

• Cleaning of CHF3 plasma-etched SiO2/SiN/Cu via structures using hydrogen plasma, oxygen plasma, and hexafluoroacetylacetone vapor

  K.Ueno, K. U., V.M.Donnelly, V. M. D. & Ueno, K., 1998 11月 1, In: Journal of Vacuum Science and Technology. B16, p. 2986-2995

  研究成果: Article › 査読

  23 被引用数 (Scopus)

• Seed effect on self-annealing of electroplated copper films

  K.Ueno, K. U., T.Ritzdorf, T. R., S.Grace, S. G. & Ueno, K., 1998 10月 6, In: Abstract of Advanced Metallization Conference in 1998.

  研究成果: Article › 査読

• Ultra-low resistance Cu vias

  K.Ueno, K. U. & Ueno, K., 1998 10月 5, In: Ａｄｖａｎｃｅｄ　Ｍｅｔａｌｌｉｚａｔｉｏｎ　for ULSI Applications in 1998,Tutorial,Future Research Seminar.

  研究成果: Article › 査読

• Uniform (111) textured Cu CVD on vacuum annealed Cu seed layer

  K.Ueno, K. U., A.Sekiguchi, A. S., A.Kobayashi, A. K. & Ueno, K., 1998 6月 1, In: Proceedings of 1998 International Interconnect Technology Conference. p. 119-121

  研究成果: Article › 査読

  14 被引用数 (Scopus)
• 1997

  A degradation-free Cu/HSQ damascene technology using metal mask patterning and post-CMP cleaning by electrolytic ionized water

  H.Aoki, H. A., S.Yamazaki, S. Y., T.Usami, T. U., Y.Tsuchiya, Y. T., N.Ito, N. I., T.Onodera, T. O., Y.Hayash, Y. H., K.Ueno, K. U., H.Gomi, H. G. & Ueno, K., 1997 12月 1, In: 1997 IEDM Technical Digest. p. 777-780

  研究成果: Article › 査読

  8 被引用数 (Scopus)

• A new two step metal CMP technique for a high performance multilevel interconnects featured by Al-and Cu in low - , organic film metallization

  Y.Hayashi, Y. H., T.Onodera, T. O., T.Nakajima, T. N., K.Kikuta, K. K., Y.Tsuchiya, Y. T., J.Kawahara, J. K., S.Takahashi, S. T., K.Ueno, K. U., S.Chikaki, S. C. & Ueno, K., 1997 6月 1, In: 1996 Symposium on VLSI Technology Digest of Technical Papers. p. 88-89

  研究成果: Article › 査読

• A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF

  T.Yokoyama, T. Y., Y.Yamada, Y. Y., K.Kishimoto, K. K., T.Usami, T. U., H.Kawamoto, H. K., H.Gomi, H. G., K.Ueno, K. U. & Ueno, K., 1997 9月 1, In: Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials. p. 288-290

  研究成果: Article › 査読

• Cleaning of CHF₃ plasma-etched SiO₂/SiN/Cu via structures with dilute hydrofluoric acid solutions

  Ueno, K., Donnelly, V. M. & Kikkawa, T., 1997 7月, In: Journal of the Electrochemical Society. 144, 7, p. 2565-2572 8 p.

  研究成果: Article › 査読

  • Hydrofluoric acid 100%
  • Cleaning 61%
  • Plasmas 60%
  • Photoelectron spectroscopy 44%
  • Dielectric Material 34%
  36 被引用数 (Scopus)

• Cleaning of CHF3 plasma-etched SiO2/SiN/Cu via structures with dilute hydrofluoric acid solutions

  K.Ueno, K. U., V.M.Donnelly, V. M. D., T.Kikkawa, T. K. & Ueno, K., 1997 1月 1, In: Journal of Electrochemical Society. 144, p. 2565-2572

  研究成果: Article › 査読

  36 被引用数 (Scopus)

• Crystallographic orientation change with line-width for CVD Cu damascene interconnection

  K.Ueno, K. U., Y.Tsuchiya, Y. T., N.Itoh, N. I., T.Kikkawa, T. K., A.Sekiguchi, A. S. & Ueno, K., 1997 10月 1, In: Advanced Metallization and Interconnect Systems for ULSI Applications in 1997. p. 489-494

  研究成果: Article › 査読

• Microstructure of electroplated copper in damascene structures: effects of barrier layers and geometry

  M.E.Gross, M. E. G., E.Coleman, E. C., W.Lai, W. L., J.Miner, J. M., T.Ritzdorf, T. R., J.Turner, J. T., K.Gibbons, K. G., E.klawuhn, E. K., M.Biberger, M. B., K.Ueno, K. U., Y.Tsuchiya, Y. T., N.Ito, N. I. & Ueno, K., 1997 10月 1, In: Advanced Interconnects and Contact Materials and Processes for Future ICs.

  研究成果: Article › 査読

• The deposition rates for Cu-CVD with Cu(hfac)(tmvs)

  A.Kobayashi, A. K., A.Sekiguchi, A. S., K.Ikeda, K. I., O.Okada, O. O., N.Hosokasa, N. H., Y.Tsuchoya, Y. T., K.Ueno, K. U. & Ueno, K., 1997 4月 1, In: Proceedings of Advanced Metallization and Interconnect Systems for ULSI Applications in 1996. p. 177-183

  研究成果: Article › 査読

• Ultra-low resistance direct contact Cu via technology using in-situ chemical vapor cleaning

  Y.Tsuychiya, Y. T., K.Ueno, K. U., V.M.Donnelly, V. M. D., T.Kikkawa, T. K., Y.Hayashi, Y. H., A.Kobayashi, A. K., A.Skiguchi, A. S. & Ueno, K., 1997 6月 1, In: 1997 Symposium on VLSI Technology Digest of Technical Papers. p. 59-60

  研究成果: Article › 査読

  5 被引用数 (Scopus)
• 1996

  A half-micron pitch Cu interconnection technology

  K.Ueno, K. U., K.Ohto, K. O., K.Tsunenari, K. T. & Ueno, K., 1996 6月 1, In: 1995 Symposium on VLSI Technology Digest of Technical Papers. p. 27-28

  研究成果: Article › 査読

  1 被引用数 (Scopus)

• Cleaning of CHF3 plasma etched SiO2/SiN/Cu via structures

  K.Ueno, K. U., V.M.Donnelly, V. M. D., Y.Tsuchiya, Y. T., K.Ohto, K. O., T.Kikkawa, T. K. & Ueno, K., 1996 5月 1, In: Proceedings of 1996 VLSI Multilevel Interconnection Conference. p. 245-250

  研究成果: Article › 査読

• Process/ pad effects on electrical and physical properties of CMP copper damascene interconnects

  J-F.Wang, J-F. W., A.R.Sethuraman, A. R. S., L.Cook, L. C., K.Ueno, K. U., Y.Tsuchiya, Y. T. & Ueno, K., 1996 5月 1, In: Proceedings of 1996 VLSI Multilevel Interconnection Conference. p. 387-392

  研究成果: Article › 査読
• 1995

  Copper and tungsten metallization using MOCVD-TiN barrier layer (Invited)

  K.Ueno, K. U. & Ueno, K., 1995 11月 1, In: Proceedings of Annual Dielectric and CVD Metallization Symposium.

  研究成果: Article › 査読

• Reactive ion etch characteristics of silicon oxynitride formed plasma enhanced chemical vapor deposition

  K.Ueno, K. U., K.Tokashiki, K. T., T.Kikkawa, T. K. & Ueno, K., 1995 7月 1, In: Journal of Vacuum Science and Technology. B13, p. 1447-1450

  研究成果: Article › 査読
• 1994

  Quarter-micron Cu metallization using ultra-thin TiN barrier layers

  K.Ueno, K. U., K.Ohta, K. O., K.Tsunenari, K. T. & Ueno, K., 1994 10月 1, In: Advanced Metallization for ULSI Applications in 1994. p. 95-101

  研究成果: Article › 査読
• 1993

  MOCVD-TiN barrirer for blanket W-CVD

  K.Ohto, K. O., K.Ueno, K. U., K.Tsunenari, K. T., K.Numajiri, K. N., M.Okamura, M. O., H.Jinba, H. J. & Ueno, K., 1993 10月 1, In: Advanced Metallization for ULSI Applications in 1993. p. 151-157

  研究成果: Article › 査読

• Multilevel planarized trench aluminum (PTA) interconnection using reflow sputtering and chemical mechanical polishing

  K.Kikuta, K. K., T.Nakajima, T. N., K.Ueno, K. U., T.Kikkawa, T. K. & Ueno, K., 1993 12月 1, In: 1993 IEDM Technical Digest. p. 285-288

  研究成果: Article › 査読

  11 被引用数 (Scopus)
• 1992

  A quarter-micron planarized interconnection technology with self-aligned plug

  K.Ueno, K. U., K.Ohto, K. O., K.Tsunenari, K. T., K.Kajiyana, K. K., K.Kikuta, K. K., T.Kikkawa, T. K. & Ueno, K., 1992 12月 1, In: 1992 IEDM Technical Digest. p. 305-308

  研究成果: Article › 査読
• 1991

  MBE grown single crystal Al Schottky contacts on (111) A and (111)B GaAs

  K.Ueno, K. U., K.Hirose, K. H., T.Yoshida, T. Y. & Ueno, K., 1991 4月 1, In: Proceedings of International Symposium on GaAs & Related Compounds. p. 117-122

  研究成果: Article › 査読
• 1990

  Epitaxial Al Schottky contacts formed on (111) GaAs

  Ueno, K., Yoshida, T. & Hirose, K., 1990, In: Applied Physics Letters. 56, 22, p. 2204-2206 3 p.

  研究成果: Article › 査読

  • electric contacts 100%
  • electric potential 61%
  • molecular beam epitaxy 48%
  • capacitance 45%
  • atmospheres 40%
  3 被引用数 (Scopus)
• 1988

  Prediction and verification of no gate orientation effects for GaAs MESFETs in (111) substrates

  K.Ueno, K. U., H.Hida, H. H., Y.Ogawa, Y. O., Y.Tsukada, Y. T., T.Nozaki, T. N. & Ueno, K., 1988 12月 1, In: 1988 IEDM Technical Digest. p. 846-849

  研究成果: Article › 査読

  2 被引用数 (Scopus)
• 1985

  A high transconductance GaAs MESFET with reduced short channel effect characteristics

  K.Ueno, K. U., T.Furutsuka, T. F., H.Toyoshima, H. T., M.Kanamari, M. K., A.Higashisaka, A. H. & Ueno, K., 1985 12月 1, In: 1985 IDEM Technical Digest. p. 82-85

  研究成果: Article › 査読

  12 被引用数 (Scopus)

• High transconductance GaAs MESFETs fabricated using sidewall-assisted self-alignment technology (SWAT)

  K.Ueno, K. U., T.Furutuka, T. F., M.Kanamori, M. K., A.Higashisaka, A. H. & Ueno, K., 1985 8月 1, In: Extended Abstracts of Solid State Devices and Materials. p. 405-408

  研究成果: Article › 査読

  4 被引用数 (Scopus)