田中 愼一

研究成果

年別の研究成果 1987 1987 1995 1998 2000 2003 2004 2006 2007 2015 2021

• 923 被引用数
• 18 h-index
• 68 Article
• 17 Conference contribution
• 10 Paper
• 9 Conference article
• 4 その他
  • 2 Chapter
  • 1 Editorial
  • 1 Letter

年別の研究成果

年別の研究成果

検索結果

• 2021

  右手／左手系複合線路を用いるマイクロ波電力増幅器の高効率化技術

  Tanaka, S., 2021 8月 1, In: Journal of Japan Institute of Electronics Packaging. 24, 5, p. 394-400 7 p.

  研究成果: Article › 査読
• 2019

  Class-F GaN HEMT amplifiers using compact CRLH harmonic tuning stubs designed based on negative order resonance modes

  Tanaka, S., Koizumi, S., Ishikawa & Honjo, K., 2019 1月 1, In: IEICE Transactions on Electronics. E102C, 10, p. 691-698 8 p.

  研究成果: Article › 査読

  • High electron mobility transistors 100%
  • Resonance 68%
  • Tuning 67%
  • Composite materials 50%
  • Networks (circuits) 47%
  2 被引用数 (Scopus)

• Novel DC-biasing circuits with arbitrary harmonics-control capability for compact high-efficiency power amplifiers

  Tanaka, S., Oda, T. & Saiki, K., 2019 1月 1, In: International Journal of Microwave and Wireless Technologies.

  研究成果: Article › 査読

  • Power amplifiers 100%
  • Electric lines 84%
  • Composite materials 58%
  • High electron mobility transistors 58%
  • Mobile telecommunication systems 58%
  3 被引用数 (Scopus)
• 2018

  Attenuate Influence of Parasitic Elements in 13.56-MHz Inverter for Wireless Power Transfer Systems

  Trung, N. K., Ogata, T., Tanaka, S. & Akatsu, K., 2018 4月 1, In: IEEE Transactions on Power Electronics. 33, 4, p. 3218-3231 14 p., 7934398.

  研究成果: Article › 査読

  • Wireless power transfer 100%
  • Printed circuit boards 43%
  • Networks (circuits) 39%
  • Damping 21%
  • Signal interference 15%
  11 被引用数 (Scopus)

• Composite right-/left-handed transmission line stub resonators for X-band low phase-noise oscillators

  Tanaka, S., Nishizawa, H. & Takata, K., 2018 10月, In: IEICE Transactions on Electronics. E101C, 10, p. 734-743 10 p.

  研究成果: Article › 査読

  • Phase noise 100%
  • Resonators 87%
  • Electric lines 77%
  • Inductance 73%
  • Parasitic 57%
• 2016

  Miniaturization of double stub resonators using lumped-element capacitors for MMIC applications

  Tanaka, S., Katayose, T., Nishizawa, H., Hosoya, KI., Ishikawa, R. & Honjo, K., 2016 7月 1, In: IEICE Transactions on Electronics. E99C, 7, p. 830-836 7 p.

  研究成果: Article › 査読

  • Monolithic microwave integrated circuits 100%
  • Capacitor 90%
  • Resonators 83%
  • Capacitors 69%
  • Phase noise 31%
• 2015

  Analysis and PCB design of class D inverter for wireless power transfer systems operating at 13.56 MHz

  Trung, N. K., Ogata, T., Tanaka, S. & Akatsu, K., 2015, In: IEEJ Journal of Industry Applications. 4, 6, p. 703-713 11 p.

  研究成果: Article › 査読

  • Wireless power transfer 100%
  • Networks (circuits) 47%
  • Inductance 32%
  24 被引用数 (Scopus)

• Compact stub resonators with enhanced Q-factor using negative order resonance modes of non-uniform CRLH transmission lines

  Tanaka, S., Mukaida, K. & Takata, K., 2015 3月 1, In: IEICE Transactions on Electronics. E98C, 3, p. 252-259 8 p.

  研究成果: Article › 査読

  • Resonators 100%
  • Electric lines 88%
  • Resonance 84%
  • Composite Material 53%
  • Velocity 44%
  7 被引用数 (Scopus)
• 2007

  A 0.18 um CMOS Low-spurious Local Signal Generator for MB-OFDM UWB Radio

  Tokairin, T. & Tanaka, T. T. M. N. M., 2007 6月 1, In: Radio Frequency Integrated Circuits Symposium. p. 215-218

  研究成果: Article › 査読

  4 被引用数 (Scopus)

• A New DC Offset and I/Q Mismatch Compensation Technique for a CMOS Direct-Conversion WLAN Transmitter

  Yanagisawa, K. & Tanaka, K. Y. M. M., 2007 6月 1, In: MTT-S International Microwave Symposium. p. 85-88

  研究成果: Article › 査読

  6 被引用数 (Scopus)

• Application of Microwave and Millimeter-wave Circuit Technologies to InGaP-HBT ICs for 40-Gbps Optical-transmission Systems

  Hosoya, K., Suzuki, Y., Amamiya, Y., Yamazaki, Z., Mamada, M., Fujihara, A., Kawanaka, M., Tanaka, S., Wada, S. & Hida, H., 2007 1月 1, In: IEICE Transactions on Electronic. E90-C, p. 1685-1701

  研究成果: Article › 査読
• 2006

  50% PAE 20-mA Quiescent Current W-CDMA Power Amplifier with On-Chip Dynamic-Gain-Deviation Cancellation Circuit

  Aoki, Y. & Tanaka, Y. A. Y. K. H., 2006 1月 1, In: Radio & Wireless Symposium. p. 251-254

  研究成果: Article › 査読

• High-efficiency enhancement-mode power heterojunction FET with Buried p⁺-GaAs gate structure for low-voltage-operated mobile applications

  Bito, Y., Yamakawa, Y., Tanaka, S. & Iwata, N., 2006 8月 1, In: IEEE Electron Device Letters. 27, 8, p. 636-639 4 p.

  研究成果: Article › 査読

  • Heterojunctions 100%
  • Field effect transistors 81%
  • Drain Current 59%
  • Threshold voltage 56%
  • Voltage 55%
  1 被引用数 (Scopus)

• RF HBT oscillators with low-phase noise and high-power performance utilizing (λ/4 ± δ) open-stubs resonator

  Hosoya, K., Tanaka, S., Amamiya, Y., Niwa, T., Shimawaki, H. & Honjo, K., 2006 8月 1, In: IEEE Transactions on Circuits and Systems I: Regular Papers. 53, 8, p. 1670-1682 13 p.

  研究成果: Article › 査読

  • Heterojunction bipolar transistors 100%
  • Phase noise 90%
  • Resonators 79%
  • Microwave oscillators 26%
  • Lithography 18%
  11 被引用数 (Scopus)

• RF HBT oscillators with low-phase noise and high-power performance utilizing a /4 resonator

  Hosoya, K., Honjo, K. H. T. A. S. & Tanaka, S., 2006 8月 1, In: IEEE Transaction on Circuits and Systems. 53, p. 1670-1682

  研究成果: Article › 査読

  11 被引用数 (Scopus)
• 2005

  Characterization of InP/InGaAs heterojunction bipolar transistors with carbon-doped base layers grown by metal-organic chemical vapor deposition and molecular beam epitaxy

  Kuroda, N., Fujihara, A., Ikenaga, Y., Ishizaki, H. & Tanaka, S., 2005 9月 8, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 9 A, p. 6412-6416 5 p.

  研究成果: Article › 査読

  • Molecular beam epitaxy 100%
  • Organic chemicals 99%
  • Heterojunction bipolar transistors 76%
  • Chemical vapor deposition 75%
  • bipolar transistors 69%
  2 被引用数 (Scopus)

• Composite-collector InGaP/GaAs HBTs for linear power amplifiers

  Niwa, T., Ishigaki, T., Kurosawa, N., Shimawaki, H. & Tanaka, S., 2005 4月, In: IEICE Transactions on Electronics. E88-C, 4, p. 672-677 6 p.

  研究成果: Article › 査読

  • Breakdown Voltage 100%
  • Heterojunction bipolar transistors 79%
  • Power amplifiers 66%
  • Composite materials 38%
  • Electric breakdown 37%
  2 被引用数 (Scopus)
• 2004

  110-Gbps Multiplexing and Demultiplexing ICs

  Suzuki, Y., S.Tanaka, Y. S. A. Y. W. U. K., H.Hida, H. H. & Tanaka, S., 2004 1月 1, In: IEEE International Solid-State Circuits Conference (ISSCC).

  研究成果: Article › 査読

• 120-Gb/s multiplexing and 110-Gb/s demultiplexing ICs

  Suzuki, Y., Yamazaki, Z., Amamiya, Y., Wada, S., Uchida, H., Kurioka, C., Tanaka, S. & Hida, H., 2004 12月, In: IEEE Journal of Solid-State Circuits. 39, 12, p. 2397-2402 6 p.

  研究成果: Article › 査読

  • Demultiplexing 100%
  • Flip flop circuits 78%
  • Multiplexing 68%
  • Heterojunction bipolar transistors 39%
  • Microstrip lines 38%
  49 被引用数 (Scopus)

• Lateral and vertical scaling of high-f_max InP-based HBTs

  Tanaka, S., Ikenaga, Y. & Fujihara, A., 2004 6月, In: IEICE Transactions on Electronics. E87-C, 6, p. 924-928 5 p.

  研究成果: Article › 査読

  • Fluorescence Maxima 100%
  • Heterojunction bipolar transistors 89%
  • Resistance 15%

• Lateral and Vertical Scaling of High-fmax InP-Based HBTs

  Tanaka, S. & Fujihara, S. TY. I., 2004 6月 1, In: IEICE Transactions on Electoronics. E87-C, p. 924-928

  研究成果: Article › 査読

• Theoretical analysis of relationships between resonator coupling coefficient and phase noise in microwave negative-resistance oscillators

  Hosoya, K., Tanaka, S. & Honjo, K., 2004 12月, In: IEICE Transactions on Electronics. E87-C, 12, p. 2132-2142 11 p.

  研究成果: Article › 査読

  • Negative Resistance 100%
  • Negative resistance 81%
  • Phase noise 62%
  • Resonators 54%
  • Microwaves 51%
  3 被引用数 (Scopus)
• 2003

  1.5-V Low Supply Voltage 43-Gb/s Delayed Flip Flop Circuit

  Amamiya, Y., S.Tanaka, Y. A. S. Y. F., H.Hida, H. H. & Tanaka, S., 2003 1月 1, In: MTT-S International Microwave Symposium (2003). p. 169-172

  研究成果: Article › 査読

  15 被引用数 (Scopus)

• An InGaP-HBT IC chipset for 40-Gbps optical transmission systems on the basis of a microwave circuit design scheme.

  K.Hosoya, K. H., S.Wada, K. H. Y. S. A. Y. M. F. K., H.Hida, H. H. & Tanaka, S., 2003 1月 1, In: European Microwave Conference. p. 627-630

  研究成果: Article › 査読
• 2002

  40-Gb/s Optical Receiver IC Cipset including a Transimpedance Amplifier a Deifferential Amplifier and a Decision Circuit Using GaAs-based HBT technology.

  Amamiya, Y., T.Takeuchi, Y. A. S. K. H. Y. M., H.Hida, H. H. & Tanaka, S., 2002 1月 1, In: MTT-S International Microwave Symposium. p. 87-90

  研究成果: Article › 査読

  21 被引用数 (Scopus)

• The Effect of Emitter Size Scaling on fmax in InP/InGaAs HBTs

  Ikenaga, Y., S.Tanaka, Y. I., Fujihara, A. & Tanaka, S., 2002 1月 1, In: Int. Conf. on Solid State Device and Materials (SSDM). p. 274

  研究成果: Article › 査読
• 2001

  V-band MMIC LNAs using Superlattice-Inserted InP HJFETs.

  A.Fujihara, A. F., N.Samoto, A. F. H. M. Y. M., S.Tanaka, S. T. & Tanaka, S., 2001 1月 1, In: International Conference on Indium Phosphide and Related Componds (2001).

  研究成果: Article › 査読
• 2000

  A Ka-Band HBT MMIC Power Amplifier.

  S.Tanaka, S. T., K.Hosoya, S. T. S. Y. A. N. S., K.Honjo, K. H. & Tanaka, S., 2000 6月 1, In: MTT-S International Microwave Symposium (2000). 1, p. 553-556

  研究成果: Article › 査読

  3 被引用数 (Scopus)

• A Low Pahse Noise 18-GHz HBT Oscillator Utilizing a (λ±δ/4) Open Stubs Resonator .

  K.Hosoya, K. H., H.Shimawaki, K. H. S. T. A. N., K.Honjo, K. H. & Tanaka, S., 2000 1月 1, In: Asia Pasific Microwave Conference (APMC). 1, p. 64-67

  研究成果: Article › 査読

• A Low Pahse Noise 38-GHz HBT MMIC Oscillator utilizing a novel transmisson line resonator.

  K.Hosoya, K. H., H.Shimawaki, K. H. S. T. A. N., K.Honjo, K. H. & Tanaka, S., 2000 1月 1, In: MTT-S International Microwave Symposium (2000). 1, p. 47-50

  研究成果: Article › 査読

  23 被引用数 (Scopus)

• Design and fabrication of a millimeter-wave MMIC HBT VCO with consideration for modulation linearity and low phase noise

  Kaneko, T., Tanji, K., Amamiya, Y., Niwa, T., Shimawaki, H., Tanaka, S. & Wada, K., 2000 1月 1, In: NEC Research and Development. 41, 1, p. 44-48 5 p.

  研究成果: Article › 査読

  • Bipolar transistors 100%
  • Monolithic microwave integrated circuits 92%
  • Variable frequency oscillators 90%
  • Phase noise 87%
  • Millimeter waves 80%
  1 被引用数 (Scopus)
• 1998

  A 38-GHz Low Pahse Noise Monolithic VCO for FM MOD Using an AlGaAs HBT with p+ Regrown Base contacts.

  K.Tanji, K. T., S.Tanaka, K. T. T. K. A. N. S., K.Wada, K. W. & Tanaka, S., 1998 1月 1, In: European Microwave Conference. p. 47-51

  研究成果: Article › 査読

  7 被引用数 (Scopus)

• Design considerations for millimeter-wave power HBT's based on gain performance analysis

  Tanaka, S. N. I., Amamiya, Y., Murakami, S., Shimawaki, H., Goto, N., Takayama, Y. & Honjo, K., 1998, In: IEEE Transactions on Electron Devices. 45, 1, p. 36-44 9 p.

  研究成果: Article › 査読

  • Wave power 100%
  • Parasitic 92%
  • Heterojunction bipolar transistors 89%
  • Millimeter waves 74%
  • Voltage 54%
  13 被引用数 (Scopus)

• Design Considerations for Millimetwer-Wave Power HBTs Based on Gain Performance Analysis.

  S.Tanaka, S. T., Y.Takayama, S. T. Y. A. M. S. G., K.Honjo, K. H. & Tanaka, S., 1998 1月 1, In: IEEE Transaction on Electron Devices. 45, p. 36-44

  研究成果: Article › 査読

• High Power Density 35-GHz HBT Power Amplifiers.

  S.Tanaka, S. T., Madihian, M., Toyoshima, H., K.Honjo, K. H. & Tanaka, S., 1998 12月 1, In: Asia Pasific Microwave Conference (APMC). p. 559-662

  研究成果: Article › 査読

  56 被引用数 (Scopus)

• Microwave Low Noise HBT.

  H.Dodo, H. D., H.Shimawaki, H. D. S. T. A. N., K.Honjo, K. H. & Tanaka, S., 1998 6月 1, In: MTT-S International Microwave Symposium. p. 693-696

  研究成果: Article › 査読

  8 被引用数 (Scopus)
• 1997

  Common Base HBTs for Ka-Band Applications.

  S.Tanaka, S. T., Takayama, S. T. Y. A. M. S. G., K.Honjo, K. H. & Tanaka, S., 1997 1月 1, In: Topical Symposium on Millimeter Waves. p. 27-30

  研究成果: Article › 査読

  4 被引用数 (Scopus)

• High fmax AlGaAs/InGaAs HBT and Their Application to Millimeter Wave Ranges.

  K.Honjo, K. H., H.Shimawaki, K. H., S.Tanaka, S. T. & Tanaka, S., 1997 1月 1, In: Asia-Pacific Microwave Conference. p. 733-736

  研究成果: Article › 査読

  1 被引用数 (Scopus)
• 1996

  A 3.6W 26GHz-Band AlGaAs/GaAs HBT Power Amplifier.

  Murakami, S., Goto, S. M. T. A. S., K.Honjo, K. H. & Tanaka, S., 1996 10月 1, In: IEEE GaAs IC Symposium. p. 99-102

  研究成果: Article › 査読

  2 被引用数 (Scopus)

• High-Power High-Efficiency HBT Cell Design for 26GHz Power Amplifier.r

  S.Tanaka, S. T., Goto, S. T. S. M. A. S., K.Honjo, K. H. & Tanaka, S., 1996 1月 1, In: MTT-S International Microwave Symposium. 2, p. 843-846

  研究成果: Article › 査読

  6 被引用数 (Scopus)
• 1995

  A Flux-Based Study of Carrier Transport in Thin Base Diodes and Transistors.

  S.Tanaka, S. T., M.S.Lundstrom, M. S. L. & Tanaka, S., 1995 10月 1, In: IEEE Transaction on Electron Devices. 42, p. 1806-1815

  研究成果: Article › 査読

  19 被引用数 (Scopus)

• AlGaAs/GaAs Heterojunction Bipolar Transistors with InGaAs Etch-Stop Layer

  Y.Miyoshi, Y. M., K.Honjo, Y. M. S. T. G. & Tanaka, S., 1995 1月 1, In: Int. Symp. on Compound Semiconductors (ISCS). p. 661-666

  研究成果: Article › 査読

• A small-signal, one-flux analysis of short-base transport

  Alam, M. A., Tanaka, S. I. & Lundstrom, M. S., 1995 1月, In: Solid State Electronics. 38, 1, p. 177-182 6 p.

  研究成果: Article › 査読

  • Current Gain 100%
  • Boltzmann Equation 94%
  • Transport Property 52%
  • Fluxes 45%
  • Ballistics 41%
  9 被引用数 (Scopus)

• A Small-Signal One-Flux Analysis of Short-Base Transport.

  A.Alam, A. A., S.Tanaka, A. A., M.S.Lundstrom, M. S. L. & Tanaka, S., 1995 1月 1, In: Solid-State Electronics. 38, p. 177-182

  研究成果: Article › 査読

  9 被引用数 (Scopus)

• High-Power AlGaAs/GaAs HBTs for Ka-Band Operation.

  C.W.Kim, C. W. K., N.Goto, C. W. K. S. T. A. F. S. M., K.Honjo, K. H. & Tanaka, S., 1995 1月 1, In: IEEE GaAs IC Symposium. p. 159-162

  研究成果: Article › 査読

  2 被引用数 (Scopus)

• On the carrier mobility in forward-biased semiconductor barriers

  Lundstrom, M. & Tanaka, SI., 1995, In: Applied Physics Letters. p. 962 1 p.

  研究成果: Article › 査読

  • carrier mobility 100%
  • diffusion coefficient 79%
  • kinetic energy 51%
  • semiconductor diodes 41%
  • heterojunctions 28%
  13 被引用数 (Scopus)

• On the Carrier Mobility in Forward-Biased Semiconductor Barriers.

  M.S.Lundstrom, M. S. L., S.Tanaka, S. T. & Tanaka, S., 1995 1月 1, In: Applied Physics Letters. 66, p. 962-964

  研究成果: Article › 査読

  13 被引用数 (Scopus)
• 1994

  A compact HBT device model based on a one-flux treatment of carrier transport

  Tanaka, S. I. & Lundstrom, M. S., 1994 3月, In: Solid State Electronics. 37, 3, p. 401-410 10 p.

  研究成果: Article › 査読

  • Carrier transport 100%
  • Flux Method 91%
  • Heterojunction bipolar transistors 76%
  • bipolar transistors 69%
  • heterojunctions 56%
  29 被引用数 (Scopus)

• A Compact HBT Device Model Based on a One-Flux Treatment of Carrier Transport.

  S.Tanaka, S. T., M.S.Lundstrom, M. S. L. & Tanaka, S., 1994 3月 1, In: Solid-State Electronics. 37, p. 401-410

  研究成果: Article › 査読

  29 被引用数 (Scopus)

• Microwave/Millimeter-Wave Power HBTs with Regrown Extrinsic Base Layers.

  Y.Amamiya, Y. A., H.Shimawaki, Y. A. C. W. K. G. T. F., K.Honjo, K. H. & Tanaka, S., 1994 1月 1, In: IEEE International Electron Device Meeting. p. 199-202

  研究成果: Article › 査読

  5 被引用数 (Scopus)