• 848 引用
  • 17 h指数
1987 …2019
Pureに変更を加えた場合、すぐここに表示されます。

研究成果 1987 2019

  • 848 引用
  • 17 h指数
  • 68 Article
  • 31 Conference contribution
  • 5 Chapter
  • 1 Editorial
フィルター
Article

1/f Noise Reduction for Microwave Self-Aligned AlGaAs/GaAs HBTs with AlGaAs Surface Passivation Layer.

N.Hayama, N. H., S.Tanaka, N. H., K.Honjo, K. H. & Tanaka, S., 1990 1 1, : : Asia-Pacific Microwave Conference 1990. p. 1039-1041

研究成果: Article

15 引用 (Scopus)

1.5-V Low Supply Voltage 43-Gb/s Delayed Flip Flop Circuit

Amamiya, Y., S.Tanaka, Y. A. S. Y. F., H.Hida, H. H. & Tanaka, S., 2003 1 1, : : MTT-S International Microwave Symposium (2003). p. 169-172

研究成果: Article

110-Gbps Multiplexing and Demultiplexing ICs

Suzuki, Y., S.Tanaka, Y. S. A. Y. W. U. K., H.Hida, H. H. & Tanaka, S., 2004 1 1, : : IEEE International Solid-State Circuits Conference (ISSCC).

研究成果: Article

47 引用 (Scopus)

120-Gb/s multiplexing and 110-Gb/s demultiplexing ICs

Suzuki, Y., Yamazaki, Z., Amamiya, Y., Wada, S., Uchida, H., Kurioka, C., Tanaka, S. & Hida, H., 2004 12, : : IEEE Journal of Solid-State Circuits. 39, 12, p. 2397-2402 6 p.

研究成果: Article

Demultiplexing
Flip flop circuits
Multiplexing
Microstrip lines
Heterojunction bipolar transistors
2 引用 (Scopus)

A 3.6W 26GHz-Band AlGaAs/GaAs HBT Power Amplifier.

Murakami, S., Goto, S. M. T. A. S., K.Honjo, K. H. & Tanaka, S., 1996 10 1, : : IEEE GaAs IC Symposium. p. 99-102

研究成果: Article

7 引用 (Scopus)

A 38-GHz Low Pahse Noise Monolithic VCO for FM MOD Using an AlGaAs HBT with p+ Regrown Base contacts.

K.Tanji, K. T., S.Tanaka, K. T. T. K. A. N. S., K.Wada, K. W. & Tanaka, S., 1998 1 1, : : European Microwave Conference. p. 47-51

研究成果: Article

25 引用 (Scopus)

A compact HBT device model based on a one-flux treatment of carrier transport

Tanaka, S. & Lundstrom, M. S., 1994, : : Solid State Electronics. 37, 3, p. 401-410 10 p.

研究成果: Article

Carrier transport
Heterojunction bipolar transistors
bipolar transistors
heterojunctions
Fluxes
25 引用 (Scopus)

A Compact HBT Device Model Based on a One-Flux Treatment of Carrier Transport.

S.Tanaka, S. T., M.S.Lundstrom, M. S. L. & Tanaka, S., 1994 3 1, : : Solid-State Electronics. 37, p. 401-410

研究成果: Article

2 引用 (Scopus)

A Flux-Based Approach to HBT Device Modeling.

S.Tanaka, S. T., M.S.Lundstrom, M. S. L. & Tanaka, S., 1993 1 1, : : IEEE International Electron Device Meeting. p. 505-509

研究成果: Article

17 引用 (Scopus)

A Flux-Based Study of Carrier Transport in Thin Base Diodes and Transistors.

S.Tanaka, S. T., M.S.Lundstrom, M. S. L. & Tanaka, S., 1995 10 1, : : IEEE Transaction on Electron Devices. 42, p. 1806-1815

研究成果: Article

2 引用 (Scopus)

A Ka-Band HBT MMIC Power Amplifier.

S.Tanaka, S. T., K.Hosoya, S. T. S. Y. A. N. S., K.Honjo, K. H. & Tanaka, S., 2000 6 1, : : MTT-S International Microwave Symposium (2000). 1, p. 553-556

研究成果: Article

AlGaAs/GaAs Heterojunction Bipolar Transistors with InGaAs Etch-Stop Layer

Y.Miyoshi, Y. M., K.Honjo, Y. M. S. T. G. & Tanaka, S., 1995 1 1, : : Int. Symp. on Compound Semiconductors (ISCS). p. 661-666

研究成果: Article

A Low Pahse Noise 18-GHz HBT Oscillator Utilizing a (λ±δ/4) Open Stubs Resonator .

K.Hosoya, K. H., H.Shimawaki, K. H. S. T. A. N., K.Honjo, K. H. & Tanaka, S., 2000 1 1, : : Asia Pasific Microwave Conference (APMC). 1, p. 64-67

研究成果: Article

23 引用 (Scopus)

A Low Pahse Noise 38-GHz HBT MMIC Oscillator utilizing a novel transmisson line resonator.

K.Hosoya, K. H., H.Shimawaki, K. H. S. T. A. N., K.Honjo, K. H. & Tanaka, S., 2000 1 1, : : MTT-S International Microwave Symposium (2000). 1, p. 47-50

研究成果: Article

23 引用 (Scopus)
Networks (circuits)
Inductance

An InGaP-HBT IC chipset for 40-Gbps optical transmission systems on the basis of a microwave circuit design scheme.

K.Hosoya, K. H., S.Wada, K. H. Y. S. A. Y. M. F. K., H.Hida, H. H. & Tanaka, S., 2003 1 1, : : European Microwave Conference. p. 627-630

研究成果: Article

3 引用 (Scopus)

A Novel Fully Self-Aligned Closely-Spaced-Electrode HBT for SSI Logic Family Applications.

S, M. M., N.Hayama, M. M. S. T., K.Honjo, K. H. & Tanaka, S., 1987 1 1, : : IEEE GaAs IC Symposium. p. 113-116

研究成果: Article

5 引用 (Scopus)

A Novel Process for Emitter-Base-Collector Self-Aligned Heterojunction Bipolar Transistors Using a Pattern-Inversion Method

S.Tanaka, S. T., H.Toyoshima, S. T. M. M., K.Honjo, K. H. & Tanaka, S., 1987 5 1, : : Electronics Letters. 23, p. 562-564

研究成果: Article

2 引用 (Scopus)

Application of AlGaAs/GaAs HBT's to high-speed CML logic family fabrication.

Madihian, M., Tanaka, S., Hayama, N., Okamoto, A. & Honjo, K., 1989 4, : : IEEE Transactions on Electron Devices. 36, 4 pt 1, p. 625-631 7 p.

研究成果: Article

Logic gates
Heterojunction bipolar transistors
logic
aluminum gallium arsenides
Time delay

Application of Microwave and Millimeter-wave Circuit Technologies to InGaP-HBT ICs for 40-Gbps Optical-transmission Systems

Hosoya, K., Suzuki, Y., Amamiya, Y., Yamazaki, Z., Mamada, M., Fujihara, A., Kawanaka, M., Tanaka, S., Wada, S. & Hida, H., 2007 1 1, : : IEICE Transactions on Electronic. E90-C, p. 1685-1701

研究成果: Article

9 引用 (Scopus)

A small-signal, one-flux analysis of short-base transport

Alam, M. A., Tanaka, S. I. & Lundstrom, M. S., 1995, : : Solid State Electronics. 38, 1, p. 177-182 6 p.

研究成果: Article

Fluxes
Ballistics
ballistics
Electron transport properties
Boltzmann equation
9 引用 (Scopus)

A Small-Signal One-Flux Analysis of Short-Base Transport.

A.Alam, A. A., S.Tanaka, A. A., M.S.Lundstrom, M. S. L. & Tanaka, S., 1995 1 1, : : Solid-State Electronics. 38, p. 177-182

研究成果: Article

5 引用 (Scopus)
Networks (circuits)
Printed circuit boards
Damping
Switching frequency
Signal interference
30 引用 (Scopus)

Characterization of current-induced degradation in Be-doped HBT's based in GaAs and InP

Tanaka, S., Shimawaki, H., Kasahara, K. & Honjo, K., 1993 7, : : IEEE Transactions on Electron Devices. 40, 7, p. 1194-1201 8 p.

研究成果: Article

Induced currents
Heterojunction bipolar transistors
bipolar transistors
heterojunctions
degradation
30 引用 (Scopus)

Characterization of Current-Induced Degradation in Be-Doped HBTs Based on GaAs and InP.

S.Tanaka, S. T., K.Kasahara, S. T. H. S., K.Honjo, K. H. & Tanaka, S., 1993 7 1, : : IEEE Transaction on Electron Devices. 40, p. 1194-1201

研究成果: Article

2 引用 (Scopus)
Organic chemicals
Heterojunction bipolar transistors
bipolar transistors
Molecular beam epitaxy
metalorganic chemical vapor deposition
High electron mobility transistors
Tuning
Networks (circuits)
Composite materials
Microstrip lines
3 引用 (Scopus)

Common Base HBTs for Ka-Band Applications.

S.Tanaka, S. T., Takayama, S. T. Y. A. M. S. G., K.Honjo, K. H. & Tanaka, S., 1997 1 1, : : Topical Symposium on Millimeter Waves. p. 27-30

研究成果: Article

7 引用 (Scopus)
Resonators
Electric lines
Microstrip lines
Composite materials
Insertion losses
2 引用 (Scopus)

Composite-collector InGaP/GaAs HBTs for linear power amplifiers

Niwa, T., Ishigaki, T., Kurosawa, N., Shimawaki, H. & Tanaka, S., 2005 4, : : IEICE Transactions on Electronics. E88-C, 4, p. 672-677 6 p.

研究成果: Article

Heterojunction bipolar transistors
Power amplifiers
Composite materials
Electric breakdown
Current density
Phase noise
Resonators
Electric lines
Composite materials
Networks (circuits)
1 引用 (Scopus)

Design and fabrication of a millimeter-wave MMIC HBT VCO with consideration for modulation linearity and low phase noise

Kaneko, T., Tanji, K., Amamiya, Y., Niwa, T., Shimawaki, H., Tanaka, S. & Wada, K., 2000 1, : : NEC Research and Development. 41, 1, p. 44-48 5 p.

研究成果: Article

Bipolar transistors
Variable frequency oscillators
Monolithic microwave integrated circuits
Phase noise
Millimeter waves
13 引用 (Scopus)

Design considerations for millimeter-wave power HBT's based on gain performance analysis

Tanaka, SI., Amamiya, Y., Murakami, S., Shimawaki, H., Goto, N., Takayama, Y. & Honjo, K., 1998, : : IEEE Transactions on Electron Devices. 45, 1, p. 36-44 9 p.

研究成果: Article

Wave power
Heterojunction bipolar transistors
Millimeter waves
millimeter waves
emitters

Design Considerations for Millimetwer-Wave Power HBTs Based on Gain Performance Analysis.

S.Tanaka, S. T., Y.Takayama, S. T. Y. A. M. S. G., K.Honjo, K. H. & Tanaka, S., 1998 1 1, : : IEEE Transaction on Electron Devices. 45, p. 36-44

研究成果: Article

1 引用 (Scopus)

Extension of High fT Operation Bias Range for an AlInAs/InGaAs HBT.

S.Tanaka, S. T., M.Mizuta, S. T. A. F. B. M., K.Honjo, K. H. & Tanaka, S., 1989 1 1, : : IEEE Cornell Conference. p. 175-184

研究成果: Article

Far-Infrared Magneto-Refelection Study of Band Warping in HgTe.

S.Tanaka, S. T., Miura, S. T. S. T., S.Uchida, S. U. & Tanaka, S., 1987 1 1, : : Journal of Physical Society of Japan. 56, p. 788-793

研究成果: Article

Far-Infrared Magneto-Reflection Study of the Band Warping in HgTe

Tanaka, S., Takeyama, S., Miura, N. & Uchida, S., 1987 2 15, : : Journal of the Physical Society of Japan. 56, 2, p. 788-793

研究成果: Article

17 引用 (Scopus)

Flux-based study of carrier transport in thin-base diodes and transistors

Tanaka, S. & Lundstrom, M. S., 1995 10, : : IEEE Transactions on Electron Devices. 42, 10, p. 1806-1815 10 p.

研究成果: Article

Carrier transport
Backscattering
backscattering
Transistors
Diodes
1 引用 (Scopus)
Field effect transistors
Threshold voltage
Heterojunctions
Drain current
Voltage measurement
1 引用 (Scopus)

High fmax AlGaAs/InGaAs HBT and Their Application to Millimeter Wave Ranges.

K.Honjo, K. H., H.Shimawaki, K. H., S.Tanaka, S. T. & Tanaka, S., 1997 1 1, : : Asia-Pacific Microwave Conference. p. 733-736

研究成果: Article

1 引用 (Scopus)

High-Power AlGaAs/GaAs HBTs for Ka-Band Operation.

C.W.Kim, C. W. K., N.Goto, C. W. K. S. T. A. F. S. M., K.Honjo, K. H. & Tanaka, S., 1995 1 1, : : IEEE GaAs IC Symposium. p. 159-162

研究成果: Article

50 引用 (Scopus)

High Power Density 35-GHz HBT Power Amplifiers.

S.Tanaka, S. T., Madihian, M., Toyoshima, H., K.Honjo, K. H. & Tanaka, S., 1998 12 1, : : Asia Pasific Microwave Conference (APMC). p. 559-662

研究成果: Article

6 引用 (Scopus)

High-Power High-Efficiency HBT Cell Design for 26GHz Power Amplifier.r

S.Tanaka, S. T., Goto, S. T. S. M. A. S., K.Honjo, K. H. & Tanaka, S., 1996 1 1, : : MTT-S International Microwave Symposium. 2, p. 843-846

研究成果: Article

Lateral and Vertical Scaling of High-fmax InP-Based HBTs

Tanaka, S. & Fujihara, S. TY. I., 2004 6 1, : : IEICE Transactions on Electoronics. E87-C, p. 924-928

研究成果: Article

Lateral and vertical scaling of high-f max InP-based HBTs

Tanaka, S., Ikenaga, Y. & Fujihara, A., 2004 6, : : IEICE Transactions on Electronics. E87-C, 6, p. 924-928 5 p.

研究成果: Article

Heterojunction bipolar transistors
26 引用 (Scopus)

Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors

Tanaka, S., Hayama, H., Honjo, K., Furukawa, A., Baba, T. & Mizuta, M., 1990 1 1, : : Electronics Letters. 26, 18, p. 1439-1441 3 p.

研究成果: Article

Heterojunction bipolar transistors