年単位の研究成果
研究成果 1987 2019
Article
1/f Noise Reduction for Microwave Self-Aligned AlGaAs/GaAs HBTs with AlGaAs Surface Passivation Layer.
N.Hayama, N. H., S.Tanaka, N. H., K.Honjo, K. H. & Tanaka, S., 1990 1 1, ： : Asia-Pacific Microwave Conference 1990. p. 1039-1041研究成果: Article
15
引用
(Scopus)
1.5-V Low Supply Voltage 43-Gb/s Delayed Flip Flop Circuit
Amamiya, Y., S.Tanaka, Y. A. S. Y. F., H.Hida, H. H. & Tanaka, S., 2003 1 1, ： : MTT-S International Microwave Symposium (2003). p. 169-172研究成果: Article
110-Gbps Multiplexing and Demultiplexing ICs
Suzuki, Y., S.Tanaka, Y. S. A. Y. W. U. K., H.Hida, H. H. & Tanaka, S., 2004 1 1, ： : IEEE International Solid-State Circuits Conference (ISSCC).研究成果: Article
47
引用
(Scopus)
120-Gb/s multiplexing and 110-Gb/s demultiplexing ICs
Suzuki, Y., Yamazaki, Z., Amamiya, Y., Wada, S., Uchida, H., Kurioka, C., Tanaka, S. & Hida, H., 2004 12, ： : IEEE Journal of Solid-State Circuits. 39, 12, p. 2397-2402 6 p.研究成果: Article
Demultiplexing
Flip flop circuits
Multiplexing
Microstrip lines
Heterojunction bipolar transistors
18
引用
(Scopus)
40-Gb/s Optical Receiver IC Cipset including a Transimpedance Amplifier a Deifferential Amplifier and a Decision Circuit Using GaAs-based HBT technology.
Amamiya, Y., T.Takeuchi, Y. A. S. K. H. Y. M., H.Hida, H. H. & Tanaka, S., 2002 1 1, ： : MTT-S International Microwave Symposium. p. 87-90研究成果: Article
50% PAE 20-mA Quiescent Current W-CDMA Power Amplifier with On-Chip Dynamic-Gain-Deviation Cancellation Circuit
Aoki, Y. & Tanaka, Y. A. Y. K. H., 2006 1 1, ： : Radio & Wireless Symposium. p. 251-254研究成果: Article
4
引用
(Scopus)
A 0.18 um CMOS Low-spurious Local Signal Generator for MB-OFDM UWB Radio
Tokairin, T. & Tanaka, T. T. M. N. M., 2007 6 1, ： : Radio Frequency Integrated Circuits Symposium. p. 215-218研究成果: Article
2
引用
(Scopus)
A 3.6W 26GHz-Band AlGaAs/GaAs HBT Power Amplifier.
Murakami, S., Goto, S. M. T. A. S., K.Honjo, K. H. & Tanaka, S., 1996 10 1, ： : IEEE GaAs IC Symposium. p. 99-102研究成果: Article
7
引用
(Scopus)
A 38-GHz Low Pahse Noise Monolithic VCO for FM MOD Using an AlGaAs HBT with p+ Regrown Base contacts.
K.Tanji, K. T., S.Tanaka, K. T. T. K. A. N. S., K.Wada, K. W. & Tanaka, S., 1998 1 1, ： : European Microwave Conference. p. 47-51研究成果: Article
25
引用
(Scopus)
A compact HBT device model based on a one-flux treatment of carrier transport
Tanaka, S. & Lundstrom, M. S., 1994, ： : Solid State Electronics. 37, 3, p. 401-410 10 p.研究成果: Article
Carrier transport
Heterojunction bipolar transistors
bipolar transistors
heterojunctions
Fluxes
25
引用
(Scopus)
A Compact HBT Device Model Based on a One-Flux Treatment of Carrier Transport.
S.Tanaka, S. T., M.S.Lundstrom, M. S. L. & Tanaka, S., 1994 3 1, ： : Solid-State Electronics. 37, p. 401-410研究成果: Article
2
引用
(Scopus)
A Flux-Based Approach to HBT Device Modeling.
S.Tanaka, S. T., M.S.Lundstrom, M. S. L. & Tanaka, S., 1993 1 1, ： : IEEE International Electron Device Meeting. p. 505-509研究成果: Article
17
引用
(Scopus)
A Flux-Based Study of Carrier Transport in Thin Base Diodes and Transistors.
S.Tanaka, S. T., M.S.Lundstrom, M. S. L. & Tanaka, S., 1995 10 1, ： : IEEE Transaction on Electron Devices. 42, p. 1806-1815研究成果: Article
2
引用
(Scopus)
A Ka-Band HBT MMIC Power Amplifier.
S.Tanaka, S. T., K.Hosoya, S. T. S. Y. A. N. S., K.Honjo, K. H. & Tanaka, S., 2000 6 1, ： : MTT-S International Microwave Symposium (2000). 1, p. 553-556研究成果: Article
AlGaAs/GaAs Heterojunction Bipolar Transistors with InGaAs Etch-Stop Layer
Y.Miyoshi, Y. M., K.Honjo, Y. M. S. T. G. & Tanaka, S., 1995 1 1, ： : Int. Symp. on Compound Semiconductors (ISCS). p. 661-666研究成果: Article
A Low Pahse Noise 18-GHz HBT Oscillator Utilizing a (λ±δ/4) Open Stubs Resonator .
K.Hosoya, K. H., H.Shimawaki, K. H. S. T. A. N., K.Honjo, K. H. & Tanaka, S., 2000 1 1, ： : Asia Pasific Microwave Conference (APMC). 1, p. 64-67研究成果: Article
23
引用
(Scopus)
A Low Pahse Noise 38-GHz HBT MMIC Oscillator utilizing a novel transmisson line resonator.
K.Hosoya, K. H., H.Shimawaki, K. H. S. T. A. N., K.Honjo, K. H. & Tanaka, S., 2000 1 1, ： : MTT-S International Microwave Symposium (2000). 1, p. 47-50研究成果: Article
23
引用
(Scopus)
Analysis and PCB design of class D inverter for wireless power transfer systems operating at 13.56 MHz
Trung, N. K., Ogata, T., Tanaka, S. & Akatsu, K., 2015, ： : IEEJ Journal of Industry Applications. 4, 6, p. 703-713 11 p.研究成果: Article
Networks (circuits)
Inductance
5
引用
(Scopus)
A New DC Offset and I/Q Mismatch Compensation Technique for a CMOS Direct-Conversion WLAN Transmitter
Yanagisawa, K. & Tanaka, K. Y. M. M., 2007 6 1, ： : MTT-S International Microwave Symposium. p. 85-88研究成果: Article
An InGaP-HBT IC chipset for 40-Gbps optical transmission systems on the basis of a microwave circuit design scheme.
K.Hosoya, K. H., S.Wada, K. H. Y. S. A. Y. M. F. K., H.Hida, H. H. & Tanaka, S., 2003 1 1, ： : European Microwave Conference. p. 627-630研究成果: Article
3
引用
(Scopus)
A Novel Fully Self-Aligned Closely-Spaced-Electrode HBT for SSI Logic Family Applications.
S, M. M., N.Hayama, M. M. S. T., K.Honjo, K. H. & Tanaka, S., 1987 1 1, ： : IEEE GaAs IC Symposium. p. 113-116研究成果: Article
5
引用
(Scopus)
A Novel Process for Emitter-Base-Collector Self-Aligned Heterojunction Bipolar Transistors Using a Pattern-Inversion Method
S.Tanaka, S. T., H.Toyoshima, S. T. M. M., K.Honjo, K. H. & Tanaka, S., 1987 5 1, ： : Electronics Letters. 23, p. 562-564研究成果: Article
2
引用
(Scopus)
Application of AlGaAs/GaAs HBT's to high-speed CML logic family fabrication.
Madihian, M., Tanaka, S., Hayama, N., Okamoto, A. & Honjo, K., 1989 4, ： : IEEE Transactions on Electron Devices. 36, 4 pt 1, p. 625-631 7 p.研究成果: Article
Logic gates
Heterojunction bipolar transistors
logic
aluminum gallium arsenides
Time delay
Application of Microwave and Millimeter-wave Circuit Technologies to InGaP-HBT ICs for 40-Gbps Optical-transmission Systems
Hosoya, K., Suzuki, Y., Amamiya, Y., Yamazaki, Z., Mamada, M., Fujihara, A., Kawanaka, M., Tanaka, S., Wada, S. & Hida, H., 2007 1 1, ： : IEICE Transactions on Electronic. E90-C, p. 1685-1701研究成果: Article
9
引用
(Scopus)
A small-signal, one-flux analysis of short-base transport
Alam, M. A., Tanaka, S. I. & Lundstrom, M. S., 1995, ： : Solid State Electronics. 38, 1, p. 177-182 6 p.研究成果: Article
Fluxes
Ballistics
ballistics
Electron transport properties
Boltzmann equation
9
引用
(Scopus)
A Small-Signal One-Flux Analysis of Short-Base Transport.
A.Alam, A. A., S.Tanaka, A. A., M.S.Lundstrom, M. S. L. & Tanaka, S., 1995 1 1, ： : Solid-State Electronics. 38, p. 177-182研究成果: Article
5
引用
(Scopus)
Attenuate Influence of Parasitic Elements in 13.56-MHz Inverter for Wireless Power Transfer Systems
Trung, N. K., Ogata, T., Tanaka, S. & Akatsu, K., 2018 4 1, ： : IEEE Transactions on Power Electronics. 33, 4, p. 3218-3231 14 p., 7934398.研究成果: Article
Networks (circuits)
Printed circuit boards
Damping
Switching frequency
Signal interference
30
引用
(Scopus)
Characterization of current-induced degradation in Be-doped HBT's based in GaAs and InP
Tanaka, S., Shimawaki, H., Kasahara, K. & Honjo, K., 1993 7, ： : IEEE Transactions on Electron Devices. 40, 7, p. 1194-1201 8 p.研究成果: Article
Induced currents
Heterojunction bipolar transistors
bipolar transistors
heterojunctions
degradation
30
引用
(Scopus)
Characterization of Current-Induced Degradation in Be-Doped HBTs Based on GaAs and InP.
S.Tanaka, S. T., K.Kasahara, S. T. H. S., K.Honjo, K. H. & Tanaka, S., 1993 7 1, ： : IEEE Transaction on Electron Devices. 40, p. 1194-1201研究成果: Article
2
引用
(Scopus)
Characterization of InP/InGaAs heterojunction bipolar transistors with carbon-doped base layers grown by metal-organic chemical vapor deposition and molecular beam epitaxy
Kuroda, N., Fujihara, A., Ikenaga, Y., Ishizaki, H. & Tanaka, S., 2005 9 8, ： : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 9 A, p. 6412-6416 5 p.研究成果: Article
Organic chemicals
Heterojunction bipolar transistors
bipolar transistors
Molecular beam epitaxy
metalorganic chemical vapor deposition
Class-F GaN HEMT amplifiers using compact CRLH harmonic tuning stubs designed based on negative order resonance modes
Tanaka, S., Koizumi, S., Ishikawa & Honjo, K., 2019 1 1, ： : IEICE Transactions on Electronics. E102C, 10, p. 691-698 8 p.研究成果: Article
High electron mobility transistors
Tuning
Networks (circuits)
Composite materials
Microstrip lines
3
引用
(Scopus)
Common Base HBTs for Ka-Band Applications.
S.Tanaka, S. T., Takayama, S. T. Y. A. M. S. G., K.Honjo, K. H. & Tanaka, S., 1997 1 1, ： : Topical Symposium on Millimeter Waves. p. 27-30研究成果: Article
7
引用
(Scopus)
Compact stub resonators with enhanced Q-factor using negative order resonance modes of non-uniform CRLH transmission lines
Tanaka, S., Mukaida, K. & Takata, K., 2015 3 1, ： : IEICE Transactions on Electronics. E98C, 3, p. 252-259 8 p.研究成果: Article
Resonators
Electric lines
Microstrip lines
Composite materials
Insertion losses
2
引用
(Scopus)
Composite-collector InGaP/GaAs HBTs for linear power amplifiers
Niwa, T., Ishigaki, T., Kurosawa, N., Shimawaki, H. & Tanaka, S., 2005 4, ： : IEICE Transactions on Electronics. E88-C, 4, p. 672-677 6 p.研究成果: Article
Heterojunction bipolar transistors
Power amplifiers
Composite materials
Electric breakdown
Current density
Composite right-/left-handed transmission line stub resonators for X-band low phase-noise oscillators
Tanaka, S., Nishizawa, H. & Takata, K., 2018 10 1, ： : IEICE Transactions on Electronics. E101C, 10, p. 734-743 10 p.研究成果: Article
Phase noise
Resonators
Electric lines
Composite materials
Networks (circuits)
1
引用
(Scopus)
Design and fabrication of a millimeter-wave MMIC HBT VCO with consideration for modulation linearity and low phase noise
Kaneko, T., Tanji, K., Amamiya, Y., Niwa, T., Shimawaki, H., Tanaka, S. & Wada, K., 2000 1, ： : NEC Research and Development. 41, 1, p. 44-48 5 p.研究成果: Article
Bipolar transistors
Variable frequency oscillators
Monolithic microwave integrated circuits
Phase noise
Millimeter waves
13
引用
(Scopus)
Design considerations for millimeter-wave power HBT's based on gain performance analysis
Tanaka, SI., Amamiya, Y., Murakami, S., Shimawaki, H., Goto, N., Takayama, Y. & Honjo, K., 1998, ： : IEEE Transactions on Electron Devices. 45, 1, p. 36-44 9 p.研究成果: Article
Wave power
Heterojunction bipolar transistors
Millimeter waves
millimeter waves
emitters
Design Considerations for Millimetwer-Wave Power HBTs Based on Gain Performance Analysis.
S.Tanaka, S. T., Y.Takayama, S. T. Y. A. M. S. G., K.Honjo, K. H. & Tanaka, S., 1998 1 1, ： : IEEE Transaction on Electron Devices. 45, p. 36-44研究成果: Article
1
引用
(Scopus)
Extension of High fT Operation Bias Range for an AlInAs/InGaAs HBT.
S.Tanaka, S. T., M.Mizuta, S. T. A. F. B. M., K.Honjo, K. H. & Tanaka, S., 1989 1 1, ： : IEEE Cornell Conference. p. 175-184研究成果: Article
Far-Infrared Magneto-Refelection Study of Band Warping in HgTe.
S.Tanaka, S. T., Miura, S. T. S. T., S.Uchida, S. U. & Tanaka, S., 1987 1 1, ： : Journal of Physical Society of Japan. 56, p. 788-793研究成果: Article
Far-Infrared Magneto-Reflection Study of the Band Warping in HgTe
Tanaka, S., Takeyama, S., Miura, N. & Uchida, S., 1987 2 15, ： : Journal of the Physical Society of Japan. 56, 2, p. 788-793研究成果: Article
17
引用
(Scopus)
Flux-based study of carrier transport in thin-base diodes and transistors
Tanaka, S. & Lundstrom, M. S., 1995 10, ： : IEEE Transactions on Electron Devices. 42, 10, p. 1806-1815 10 p.研究成果: Article
Carrier transport
Backscattering
backscattering
Transistors
Diodes
1
引用
(Scopus)
High-efficiency enhancement-mode power heterojunction FET with Buried p+-GaAs gate structure for low-voltage-operated mobile applications
Bito, Y., Yamakawa, Y., Tanaka, S. & Iwata, N., 2006 8, ： : IEEE Electron Device Letters. 27, 8, p. 636-639 4 p.研究成果: Article
Field effect transistors
Threshold voltage
Heterojunctions
Drain current
Voltage measurement
1
引用
(Scopus)
High fmax AlGaAs/InGaAs HBT and Their Application to Millimeter Wave Ranges.
K.Honjo, K. H., H.Shimawaki, K. H., S.Tanaka, S. T. & Tanaka, S., 1997 1 1, ： : Asia-Pacific Microwave Conference. p. 733-736研究成果: Article
1
引用
(Scopus)
High-Power AlGaAs/GaAs HBTs for Ka-Band Operation.
C.W.Kim, C. W. K., N.Goto, C. W. K. S. T. A. F. S. M., K.Honjo, K. H. & Tanaka, S., 1995 1 1, ： : IEEE GaAs IC Symposium. p. 159-162研究成果: Article
50
引用
(Scopus)
High Power Density 35-GHz HBT Power Amplifiers.
S.Tanaka, S. T., Madihian, M., Toyoshima, H., K.Honjo, K. H. & Tanaka, S., 1998 12 1, ： : Asia Pasific Microwave Conference (APMC). p. 559-662研究成果: Article
6
引用
(Scopus)
High-Power High-Efficiency HBT Cell Design for 26GHz Power Amplifier.r
S.Tanaka, S. T., Goto, S. T. S. M. A. S., K.Honjo, K. H. & Tanaka, S., 1996 1 1, ： : MTT-S International Microwave Symposium. 2, p. 843-846研究成果: Article
Lateral and Vertical Scaling of High-fmax InP-Based HBTs
Tanaka, S. & Fujihara, S. TY. I., 2004 6 1, ： : IEICE Transactions on Electoronics. E87-C, p. 924-928研究成果: Article
Lateral and vertical scaling of high-f max InP-based HBTs
Tanaka, S., Ikenaga, Y. & Fujihara, A., 2004 6, ： : IEICE Transactions on Electronics. E87-C, 6, p. 924-928 5 p.研究成果: Article
Heterojunction bipolar transistors
26
引用
(Scopus)
Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors
Tanaka, S., Hayama, H., Honjo, K., Furukawa, A., Baba, T. & Mizuta, M., 1990 1 1, ： : Electronics Letters. 26, 18, p. 1439-1441 3 p.研究成果: Article
Heterojunction bipolar transistors