• 859 引用
  • 17 h指数
1987 …2019

年単位の研究成果

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研究成果

フィルター
Article
1993

Characterization of Current-Induced Degradation in Be-Doped HBT's Based in GaAs and InP

Tanaka, S. I., Shimawaki, H., Kasahara, K. & Honjo, K., 1993 7, : : IEEE Transactions on Electron Devices. 40, 7, p. 1194-1201 8 p.

研究成果: Article

31 引用 (Scopus)

Characterization of Current-Induced Degradation in Be-Doped HBTs Based on GaAs and InP.

S.Tanaka, S. T., K.Kasahara, S. T. H. S., K.Honjo, K. H. & Tanaka, S., 1993 7 1, : : IEEE Transaction on Electron Devices. 40, p. 1194-1201

研究成果: Article

31 引用 (Scopus)
1992

Stress Current Behavior of InAlAs/InGaAs and AlGaAs/GaAs HBT’s with Polyimide Passivation

Tanaka, S. I., Kasahara, K., Shimawaki, H. & Honjo, K., 1992 11, : : IEEE Electron Device Letters. 13, 11, p. 560-562 3 p.

研究成果: Article

18 引用 (Scopus)
1990

1/f Noise Reduction for Microwave Self-Aligned AlGaAs/GaAs HBTs with AlGaAs Surface Passivation Layer.

N.Hayama, N. H., S.Tanaka, N. H., K.Honjo, K. H. & Tanaka, S., 1990 1 1, : : Asia-Pacific Microwave Conference 1990. p. 1039-1041

研究成果: Article

Low-Frequency Noise Performance of Self-Aligned Inaias/InGaAs Heterojunction Bipolar Transistors

Tanaka, S., Hayama, H., Honjo, K., Furukawa, A., Baba, T. & Mizuta, M., 1990 1, : : Electronics Letters. 26, 18, p. 1439-1441 3 p.

研究成果: Article

26 引用 (Scopus)

Low-Frequency Noise Performance of Self-Aligned InAlAs/InGaAs Heterojunction Bipolar Transistors.

S.Tanaka, S. T., M.Mizuta, S. T. N. H. F. B., K.Honjo, K. H. & Tanaka, S., 1990 8 1, : : Electronics Letters. 26, p. 1439-1441

研究成果: Article

26 引用 (Scopus)
1989

Application of AlGaAs/GaAs HBT's to High-speed CML Logic Family Fabrication

Madihian, M., Tanaka, S. I., Hayama, N., Okamoto, A. & Honjo, K., 1989 4, : : IEEE Transactions on Electron Devices. 36, 4, p. 625-631 7 p.

研究成果: Article

2 引用 (Scopus)

Extension of High fT Operation Bias Range for an AlInAs/InGaAs HBT.

S.Tanaka, S. T., M.Mizuta, S. T. A. F. B. M., K.Honjo, K. H. & Tanaka, S., 1989 1 1, : : IEEE Cornell Conference. p. 175-184

研究成果: Article

1 引用 (Scopus)
1988

Observation of Gap Anisotropy in YBa2Cu3O7- by Tunneling

I, J. S. T., Y.B, J. S. T. I. T. F. Y. M. T. T., K.Iijima, O., K.Yamamoto, K. Y. & Tanaka, S., 1988 1 1, : : Phisica C. 153-155, p. 1385-1386

研究成果: Article

55 引用 (Scopus)

Observation of gap anisotropy in YBa2Cu3O7−δ by tunneling

Tsai, J. S., Takeuchi, I., Fujita, J., Yoshitake, T., Miura, S., Tanaka, S., Terashima, T., Bando, Y., Iijima, K. & Yamamoto, K., 1988 1 1, : : Physica C: Superconductivity and its applications. 153-155, p. 1385-1386 2 p.

研究成果: Article

55 引用 (Scopus)

Self-Aligned AlInAs/InGaAs HBTs for Digital IC Applications.

S.Tanaka, S. T., M.Madihian, S. T. A. F. B. O., K.Honjo, K. H. & Tanaka, S., 1988 7 1, : : Electronics Letters. 24, p. 872-873

研究成果: Article

4 引用 (Scopus)

Self-Aligned AllnAs/GalnAs HBTs for Digital IC Applications

Tanaka, S., Furukawa, A., Baba, T., Ohta, K., Madihian, M., Honjo, K., Furukawa, A., Baba, T. & Ohta, K., 1988 1 1, : : Electronics Letters. 24, 14, p. 872-873 2 p.

研究成果: Article

4 引用 (Scopus)
1987

A Novel Fully Self-Aligned Closely-Spaced-Electrode HBT for SSI Logic Family Applications.

S, M. M., N.Hayama, M. M. S. T., K.Honjo, K. H. & Tanaka, S., 1987 1 1, : : IEEE GaAs IC Symposium. p. 113-116

研究成果: Article

3 引用 (Scopus)

A Novel Process for Emitter-Base-Collector Self-Aligned Heterojunction Bipolar Transistors Using a Pattern-Inversion Method

S.Tanaka, S. T., H.Toyoshima, S. T. M. M., K.Honjo, K. H. & Tanaka, S., 1987 5 1, : : Electronics Letters. 23, p. 562-564

研究成果: Article

5 引用 (Scopus)

Far-Infrared Magneto-Refelection Study of Band Warping in HgTe.

S.Tanaka, S. T., Miura, S. T. S. T., S.Uchida, S. U. & Tanaka, S., 1987 1 1, : : Journal of Physical Society of Japan. 56, p. 788-793

研究成果: Article

Far-Infrared Magneto-Reflection Study of the Band Warping in HgTe

Tanaka, S., Takeyama, S., Miura, N. & Uchida, S., 1987 2 15, : : Journal of the Physical Society of Japan. 56, 2, p. 788-793

研究成果: Article

Novel process for emitter-base-collector self-aligned hetero j unction bipolar transistor using a pattern-inversion method

Tanaka, S., Madihian, M., Toyoshima, H., Hayama, N. & Honjo, K., 1987 1 1, : : Electronics Letters. 23, 11, p. 562-564 3 p.

研究成果: Article

5 引用 (Scopus)