年単位の研究成果
研究成果 1987 2019
- 50 - 68 / 68 件中
- 出版年、タイトル （降順）
1993
2
引用
(Scopus)
A Flux-Based Approach to HBT Device Modeling.
S.Tanaka, S. T., M.S.Lundstrom, M. S. L. & Tanaka, S., 1993 1 1, ： : IEEE International Electron Device Meeting. p. 505-509研究成果: Article
30
引用
(Scopus)
Characterization of current-induced degradation in Be-doped HBT's based in GaAs and InP
Tanaka, S., Shimawaki, H., Kasahara, K. & Honjo, K., 1993 7, ： : IEEE Transactions on Electron Devices. 40, 7, p. 1194-1201 8 p.研究成果: Article
Induced currents
Heterojunction bipolar transistors
bipolar transistors
heterojunctions
degradation
30
引用
(Scopus)
Characterization of Current-Induced Degradation in Be-Doped HBTs Based on GaAs and InP.
S.Tanaka, S. T., K.Kasahara, S. T. H. S., K.Honjo, K. H. & Tanaka, S., 1993 7 1, ： : IEEE Transaction on Electron Devices. 40, p. 1194-1201研究成果: Article
1992
18
引用
(Scopus)
Stress Current Behavior of InAlAs/InGaAs and AlGaAs/GaAs HBT's with Polyimide Passivation.
Tanaka, S., Kasahara, K., Shimawaki, H. & Honjo, K., 1992 1 1, ： : IEEE Electron Device Letters. 13, 11, p. 560-562 3 p.研究成果: Article
Heterojunction bipolar transistors
Passivation
Polyimides
Current density
gallium arsenide
1990
1/f Noise Reduction for Microwave Self-Aligned AlGaAs/GaAs HBTs with AlGaAs Surface Passivation Layer.
N.Hayama, N. H., S.Tanaka, N. H., K.Honjo, K. H. & Tanaka, S., 1990 1 1, ： : Asia-Pacific Microwave Conference 1990. p. 1039-1041研究成果: Article
26
引用
(Scopus)
Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors
Tanaka, S., Hayama, H., Honjo, K., Furukawa, A., Baba, T. & Mizuta, M., 1990 1 1, ： : Electronics Letters. 26, 18, p. 1439-1441 3 p.研究成果: Article
Heterojunction bipolar transistors
26
引用
(Scopus)
Low-Frequency Noise Performance of Self-Aligned InAlAs/InGaAs Heterojunction Bipolar Transistors.
S.Tanaka, S. T., M.Mizuta, S. T. N. H. F. B., K.Honjo, K. H. & Tanaka, S., 1990 8 1, ： : Electronics Letters. 26, p. 1439-1441研究成果: Article
1989
2
引用
(Scopus)
Application of AlGaAs/GaAs HBT's to high-speed CML logic family fabrication.
Madihian, M., Tanaka, S., Hayama, N., Okamoto, A. & Honjo, K., 1989 4, ： : IEEE Transactions on Electron Devices. 36, 4 pt 1, p. 625-631 7 p.研究成果: Article
Logic gates
Heterojunction bipolar transistors
logic
aluminum gallium arsenides
Time delay
1
引用
(Scopus)
Extension of High fT Operation Bias Range for an AlInAs/InGaAs HBT.
S.Tanaka, S. T., M.Mizuta, S. T. A. F. B. M., K.Honjo, K. H. & Tanaka, S., 1989 1 1, ： : IEEE Cornell Conference. p. 175-184研究成果: Article
1988
55
引用
(Scopus)
Observation of Gap Anisotropy in YBa2Cu3O7- by Tunneling
I, J. S. T., Y.B, J. S. T. I. T. F. Y. M. T. T., K.Iijima, O., K.Yamamoto, K. Y. & Tanaka, S., 1988 1 1, ： : Phisica C. 153-155, p. 1385-1386研究成果: Article
55
引用
(Scopus)
Observation of gap anisotropy in YBa2Cu3 O7-δ by tunneling
Tsai, J. S., Takeuchi, I., Fujita, J., Yoshitake, T., Miura, S., Tanaka, S., Terashima, T., Bando, Y., Iijima, K. & Yamamoto, K., 1988 6, ： : Physica C: Superconductivity and its Applications. 153-55, 2, p. 1385-1386 2 p.研究成果: Article
Anisotropy
anisotropy
Energy gap
Cryogenics
cryogenics
4
引用
(Scopus)
SELF-ALIGNED AlInAs/GaInAs HBTs FOR DIGITAL IC APPLICATIONS.
Tanaka, S., Furukawa, A., Baba, T., Ohta, K., Madihian, M. & Honjo, K., 1988 7 7, ： : Electronics Letters. 24, 14, p. 872-873 2 p.研究成果: Article
Heterojunction bipolar transistors
Substrates
4
引用
(Scopus)
Self-Aligned AlInAs/InGaAs HBTs for Digital IC Applications.
S.Tanaka, S. T., M.Madihian, S. T. A. F. B. O., K.Honjo, K. H. & Tanaka, S., 1988 7 1, ： : Electronics Letters. 24, p. 872-873研究成果: Article
1987
3
引用
(Scopus)
A Novel Fully Self-Aligned Closely-Spaced-Electrode HBT for SSI Logic Family Applications.
S, M. M., N.Hayama, M. M. S. T., K.Honjo, K. H. & Tanaka, S., 1987 1 1, ： : IEEE GaAs IC Symposium. p. 113-116研究成果: Article
5
引用
(Scopus)
A Novel Process for Emitter-Base-Collector Self-Aligned Heterojunction Bipolar Transistors Using a Pattern-Inversion Method
S.Tanaka, S. T., H.Toyoshima, S. T. M. M., K.Honjo, K. H. & Tanaka, S., 1987 5 1, ： : Electronics Letters. 23, p. 562-564研究成果: Article
Far-Infrared Magneto-Refelection Study of Band Warping in HgTe.
S.Tanaka, S. T., Miura, S. T. S. T., S.Uchida, S. U. & Tanaka, S., 1987 1 1, ： : Journal of Physical Society of Japan. 56, p. 788-793研究成果: Article
Far-Infrared Magneto-Reflection Study of the Band Warping in HgTe
Tanaka, S., Takeyama, S., Miura, N. & Uchida, S., 1987 2 15, ： : Journal of the Physical Society of Japan. 56, 2, p. 788-793研究成果: Article
5
引用
(Scopus)
NOVEL PROCESS FOR EMITTER-BASE-COLLECTOR SELF-ALIGNED HETEROJUNCTION BIPOLAR TRANSISTOR USING A PATTERN-INVERSION METHOD.
Tanaka, S., Madihian, M., Toyoshima, H., Hayama, N. & Honjo, K., 1987 1 1, ： : Electronics Letters. 23, 11, p. 562-564 3 p.研究成果: Article
Heterojunction bipolar transistors
Dry etching