検索結果
1993
Tanaka, S. I. ,
Shimawaki, H. ,
Kasahara, K. &
Honjo, K. ,
1993 7月 ,
In: IEEE Transactions on Electron Devices. 40 ,
7 ,
p. 1194-1201 8 p. 研究成果: Article › 査読
Surface Recombination
100%
Induced currents
82%
Heterojunction bipolar transistors
76%
Degradation
45%
Electronic Property
26%
1992
Tanaka, S. I. ,
Kasahara, K. ,
Shimawaki, H. &
Honjo, K. ,
1992 11月 ,
In: IEEE Electron Device Letters. 13 ,
11 ,
p. 560-562 3 p. 研究成果: Article › 査読
Surface Recombination
100%
Passivation
78%
Heterojunction bipolar transistors
76%
Polyimides
76%
Chemical Passivation
65%
1990
Tanaka, S. ,
Hayama, H. ,
Honjo, K. ,
Furukawa, A. ,
Baba, T. &
Mizuta, M. ,
1990 1月 ,
In: Electronics Letters. 26 ,
18 ,
p. 1439-1441 3 p. 研究成果: Article › 査読
Heterojunction bipolar transistors
100%
1989
Madihian, M. ,
Tanaka, S. I. ,
Hayama, N. ,
Okamoto, A. &
Honjo, K. ,
1989 4月 ,
In: IEEE Transactions on Electron Devices. 36 ,
4 ,
p. 625-631 7 p. 研究成果: Article › 査読
Logic gates
100%
Heterojunction bipolar transistors
99%
Current Gain
74%
Time delay
68%
Fabrication
61%
1988
I, J. S. T. ,
Y.B, J. S. T. I. T. F. Y. M. T. T. ,
K.Iijima, O. ,
K.Yamamoto, K. Y. &
Tanaka, S. ,
1988 1月 1 ,
In: Phisica C. 153-155 ,
p. 1385-1386 研究成果: Article › 査読
Tsai, J. S. ,
Takeuchi, I. ,
Fujita, J. ,
Yoshitake, T. ,
Miura, S. ,
Tanaka, S. ,
Terashima, T. ,
Bando, Y. ,
Iijima, K. &
Yamamoto, K. ,
1988 ,
In: Physica C: Superconductivity and its applications. 153-155 ,
p. 1385-1386 2 p. 研究成果: Article › 査読
Anisotropy
100%
Tunneling
98%
Energy gap
72%
anisotropy
61%
Band Gap
48%
Tanaka, S. ,
Furukawa, A. ,
Baba, T. ,
Ohta, K. ,
Madihian, M. ,
Honjo, K. ,
Furukawa, A. ,
Baba, T. &
Ohta, K. ,
1988 1月 1 ,
In: Electronics Letters. 24 ,
14 ,
p. 872-873 2 p. 研究成果: Article › 査読
Heterojunction bipolar transistors
100%
Substrates
29%
1987
Tanaka, S. ,
Takeyama, S. ,
Miura, N. &
Uchida, S. ,
1987 2月 15 ,
In: Journal of the Physical Society of Japan. 56 ,
2 ,
p. 788-793 研究成果: Article › 査読
Tanaka, S. ,
Madihian, M. ,
Toyoshima, H. ,
Hayama, N. &
Honjo, K. ,
1987 1月 1 ,
In: Electronics Letters. 23 ,
11 ,
p. 562-564 3 p. 研究成果: Article › 査読
Bipolar transistors
100%
Heterojunction bipolar transistors
96%
Dry etching
39%