田中 愼一

研究成果

年別の研究成果 1987 1987 1995 1998 2000 2003 2004 2006 2007 2015 2021

• 924 被引用数
• 18 h-index
• 68 Article
• 17 Conference contribution
• 10 Paper
• 9 Conference article
• 4 その他
  • 2 Chapter
  • 1 Editorial
  • 1 Letter

年別の研究成果

年別の研究成果

検索結果

• 1993

  A Flux-Based Approach to HBT Device Modeling.

  S.Tanaka, S. T., M.S.Lundstrom, M. S. L. & Tanaka, S., 1993 1月 1, In: IEEE International Electron Device Meeting. p. 505-509

  研究成果: Article › 査読

  2 被引用数 (Scopus)

• Characterization of Current-Induced Degradation in Be-Doped HBT's Based in GaAs and InP

  Tanaka, S. I., Shimawaki, H., Kasahara, K. & Honjo, K., 1993 7月, In: IEEE Transactions on Electron Devices. 40, 7, p. 1194-1201 8 p.

  研究成果: Article › 査読

  • Surface Recombination 100%
  • Induced currents 82%
  • Heterojunction bipolar transistors 76%
  • Degradation 45%
  • Electronic Property 26%
  31 被引用数 (Scopus)

• Characterization of Current-Induced Degradation in Be-Doped HBTs Based on GaAs and InP.

  S.Tanaka, S. T., K.Kasahara, S. T. H. S., K.Honjo, K. H. & Tanaka, S., 1993 7月 1, In: IEEE Transaction on Electron Devices. 40, p. 1194-1201

  研究成果: Article › 査読

  31 被引用数 (Scopus)
• 1992

  Stress Current Behavior of InAlAs/InGaAs and AlGaAs/GaAs HBT’s with Polyimide Passivation

  Tanaka, S. I., Kasahara, K., Shimawaki, H. & Honjo, K., 1992 11月, In: IEEE Electron Device Letters. 13, 11, p. 560-562 3 p.

  研究成果: Article › 査読

  • Surface Recombination 100%
  • Passivation 78%
  • Heterojunction bipolar transistors 76%
  • Polyimides 76%
  • Chemical Passivation 65%
  18 被引用数 (Scopus)
• 1990

  1/f Noise Reduction for Microwave Self-Aligned AlGaAs/GaAs HBTs with AlGaAs Surface Passivation Layer.

  N.Hayama, N. H., S.Tanaka, N. H., K.Honjo, K. H. & Tanaka, S., 1990 1月 1, In: Asia-Pacific Microwave Conference 1990. p. 1039-1041

  研究成果: Article › 査読

• Low-Frequency Noise Performance of Self-Aligned Inaias/InGaAs Heterojunction Bipolar Transistors

  Tanaka, S., Hayama, H., Honjo, K., Furukawa, A., Baba, T. & Mizuta, M., 1990 1月, In: Electronics Letters. 26, 18, p. 1439-1441 3 p.

  研究成果: Article › 査読

  • Heterojunction bipolar transistors 100%
  27 被引用数 (Scopus)

• Low-Frequency Noise Performance of Self-Aligned InAlAs/InGaAs Heterojunction Bipolar Transistors.

  S.Tanaka, S. T., M.Mizuta, S. T. N. H. F. B., K.Honjo, K. H. & Tanaka, S., 1990 8月 1, In: Electronics Letters. 26, p. 1439-1441

  研究成果: Article › 査読

  27 被引用数 (Scopus)
• 1989

  Application of AlGaAs/GaAs HBT's to High-speed CML Logic Family Fabrication

  Madihian, M., Tanaka, S. I., Hayama, N., Okamoto, A. & Honjo, K., 1989 4月, In: IEEE Transactions on Electron Devices. 36, 4, p. 625-631 7 p.

  研究成果: Article › 査読

  • Logic gates 100%
  • Heterojunction bipolar transistors 99%
  • Current Gain 74%
  • Time delay 68%
  • Fabrication 61%
  2 被引用数 (Scopus)

• Extension of High fT Operation Bias Range for an AlInAs/InGaAs HBT.

  S.Tanaka, S. T., M.Mizuta, S. T. A. F. B. M., K.Honjo, K. H. & Tanaka, S., 1989 1月 1, In: IEEE Cornell Conference. p. 175-184

  研究成果: Article › 査読

  1 被引用数 (Scopus)
• 1988

  Observation of Gap Anisotropy in YBa2Cu3O7- by Tunneling

  I, J. S. T., Y.B, J. S. T. I. T. F. Y. M. T. T., K.Iijima, O., K.Yamamoto, K. Y. & Tanaka, S., 1988 1月 1, In: Phisica C. 153-155, p. 1385-1386

  研究成果: Article › 査読

  59 被引用数 (Scopus)

• Observation of gap anisotropy in YBa₂Cu₃O_7−δ by tunneling

  Tsai, J. S., Takeuchi, I., Fujita, J., Yoshitake, T., Miura, S., Tanaka, S., Terashima, T., Bando, Y., Iijima, K. & Yamamoto, K., 1988, In: Physica C: Superconductivity and its applications. 153-155, p. 1385-1386 2 p.

  研究成果: Article › 査読

  • Anisotropy 100%
  • Tunneling 98%
  • Energy gap 72%
  • anisotropy 61%
  • Band Gap 48%
  59 被引用数 (Scopus)

• Self-Aligned AlInAs/InGaAs HBTs for Digital IC Applications.

  S.Tanaka, S. T., M.Madihian, S. T. A. F. B. O., K.Honjo, K. H. & Tanaka, S., 1988 7月 1, In: Electronics Letters. 24, p. 872-873

  研究成果: Article › 査読

  4 被引用数 (Scopus)

• Self-Aligned AllnAs/GalnAs HBTs for Digital IC Applications

  Tanaka, S., Furukawa, A., Baba, T., Ohta, K., Madihian, M., Honjo, K., Furukawa, A., Baba, T. & Ohta, K., 1988 1月 1, In: Electronics Letters. 24, 14, p. 872-873 2 p.

  研究成果: Article › 査読

  • Heterojunction bipolar transistors 100%
  • Substrates 29%
  4 被引用数 (Scopus)
• 1987

  A Novel Fully Self-Aligned Closely-Spaced-Electrode HBT for SSI Logic Family Applications.

  S, M. M., N.Hayama, M. M. S. T., K.Honjo, K. H. & Tanaka, S., 1987 1月 1, In: IEEE GaAs IC Symposium. p. 113-116

  研究成果: Article › 査読

  3 被引用数 (Scopus)

• A Novel Process for Emitter-Base-Collector Self-Aligned Heterojunction Bipolar Transistors Using a Pattern-Inversion Method

  S.Tanaka, S. T., H.Toyoshima, S. T. M. M., K.Honjo, K. H. & Tanaka, S., 1987 5月 1, In: Electronics Letters. 23, p. 562-564

  研究成果: Article › 査読

  5 被引用数 (Scopus)

• Far-Infrared Magneto-Refelection Study of Band Warping in HgTe.

  S.Tanaka, S. T., Miura, S. T. S. T., S.Uchida, S. U. & Tanaka, S., 1987 1月 1, In: Journal of Physical Society of Japan. 56, p. 788-793

  研究成果: Article › 査読

• Far-Infrared Magneto-Reflection Study of the Band Warping in HgTe

  Tanaka, S., Takeyama, S., Miura, N. & Uchida, S., 1987 2月 15, In: Journal of the Physical Society of Japan. 56, 2, p. 788-793

  研究成果: Article › 査読

• Novel process for emitter-base-collector self-aligned hetero j unction bipolar transistor using a pattern-inversion method

  Tanaka, S., Madihian, M., Toyoshima, H., Hayama, N. & Honjo, K., 1987 1月 1, In: Electronics Letters. 23, 11, p. 562-564 3 p.

  研究成果: Article › 査読

  • Bipolar transistors 100%
  • Heterojunction bipolar transistors 96%
  • Dry etching 39%
  5 被引用数 (Scopus)