• 426 引用
  • 12 h指数
1984 …2019

年単位の研究成果

Pureに変更を加えた場合、すぐここに表示されます。

研究成果

2019

Change of electrical properties of rutile- and anatase-TiO2 films by atomic layer deposited Al2O3

Nabatame, T., Yamamoto, I., Sawada, T., Ohi, A., Dao, T. D., Ohishi, T. & Nagao, T., 2019 1 1, Atomic Layer Deposition Applications 15. Roozeboom, F., De Gendt, S., Dendooven, J., Elam, J. W., van der Straten, O., Liu, C., Sundaram, G. & Illiberi, A. (版). 3 版 Electrochemical Society Inc., p. 15-21 7 p. (ECS Transactions; 巻数 92, 番号 3).

研究成果: Conference contribution

Characteristics of Al 2 O 3 /native oxide/n-GaN capacitors by post-metallization annealing

Yuge, K., Nabatame, T., Irokawa, Y., Ohi, A., Ikeda, N., Sang, L., Koide, Y. & Ohishi, T., 2019 1 31, : : Semiconductor Science and Technology. 34, 3, 034001.

研究成果: Article

5 引用 (Scopus)
公開
2 引用 (Scopus)

Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors

Nabatame, T., Maeda, E., Inoue, M., Yuge, K., Hirose, M., Shiozaki, K., Ikeda, N., Ohishi, T. & Ohi, A., 2019 1 1, : : Applied Physics Express. 12, 1, 011009.

研究成果: Article

9 引用 (Scopus)

Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN

Yuge, K., Nabatame, T., Irokawa, Y., Ohi, A., Ikeda, N., Uedono, A., Sang, L., Koide, Y. & Ohishi, T., 2019 3, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., p. 368-370 3 p. 8731166. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

研究成果: Conference contribution

2017

Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors

Sawada, T., Nabatame, T., Dao, T. D., Yamamoto, I., Kurishima, K., Onaya, T., Ohi, A., Ito, K., Takahashi, M., Kohama, K., Ohishi, T., Ogura, A. & Nagao, T., 2017 11 1, : : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 35, 6, 061503.

研究成果: Article

3 引用 (Scopus)
2016

Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide

Taweesup, K., Yamamoto, I., Chikyow, T., Lothongkum, G., Tsukagoshi, K., Ohishi, T., Tungasmita, S., Visuttipitukul, P., Ito, K., Takahashi, M. & Nabatame, T., 2016 1 1, : : Thin Solid Films. 598, p. 126-130 5 p.

研究成果: Article

1 引用 (Scopus)

Prospectively of carbon-doped indium-tungsten-oxide channel TFT for bias stress instability

Kurishima, K., Nabatame, T., Kizu, T., Mitoma, N., Tsukagoshi, K., Sawada, T., Ohi, A., Yamamoto, I., Ohishi, T., Chikyow, T. & Ogura, A., 2016 1 1, Thin Film Transistors 13, TFT 13. Kuo, Y. (版). 10 版 Electrochemical Society Inc., p. 149-156 8 p. (ECS Transactions; 巻数 75, 番号 10).

研究成果: Conference contribution

2 引用 (Scopus)
2014
16 引用 (Scopus)
2012

Influence of oxygen transfer in Hf-based high-k dielectrics on flatband voltage shift

Nabatame, T., Kimura, M., Yamada, H., Ohi, A., Ohishi, T. & Chikyow, T., 2012 2 1, : : Thin Solid Films. 520, 8, p. 3387-3391 5 p.

研究成果: Article

9 引用 (Scopus)

Mechanism of Vfb shift in HfO2 gate stack by Al diffusion from (TaC)1-xAlx gate electrode

T.Nabatame, T. N., M.Kimura, M. K., H.Yamada, H. Y., A.Ohi, A. O., T.Ohishi, T. O., T.Chikyow, T. C. & Oishi, T., 2012 5 6, : : 221st Electro Chemical Society Meeting, Seattle (USA).

研究成果: Article

Mechanism of Vfb shift in HfO 2 gate stack by Al diffusion from (TaC) 1-xAl x gate electrode

Nabatame, T., Kimura, M., Yamada, H., Ohi, A., Ohishi, T. & Chikyow, T., 2012 11 19, Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 版 p. 49-59 11 p. (ECS Transactions; 巻数 45, 番号 3).

研究成果: Conference contribution

2011

Influence of oxygene transfer in Hf-based high-k dielectrics on flatband voltage shift

T.Nabatame, T. N., M.Kimura, M. K., A.Ohi, H. Y., T.Ohishi, T. O., T.Chikyow, T. C. & Oishi, T., 2011 5 25, : : 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI).

研究成果: Article

公開
2 引用 (Scopus)

Role of Al atoms in (TaC)1-xAlx gate electrode on Vfb for HfO2 gate stack

M.Kimura, M. K., T.Nabatame, T. N., H.Yamada, H. Y., A.Ohi, A. O., T.Chikyow, T. C., T.Ohishi, T. O. & Oishi, T., 2011 11 4, : : NIMS(物質材料研究機構)連携大学院ワークショップ、早稲田大.

研究成果: Article

The effect of redox annealing on flatband voltage in ITO/HfO2 MOS capacitors

H.Yamada, H. Y., T.Nabatame, T. N., M.Kimura, M. K., A.Ohi, A. O., T.Ohishi, T. O., T.Chikyow, T. C. & Oishi, T., 2011 11 4, : : NIMS(物質材料研究機構)連携大学院ワークショップ、早稲田大.

研究成果: Article

2009

Micro-pattering of siloxane films by proton beam writing

Nishikawa, H., Tsuchiya, R., Yasukawa, T., Kaneko, T., Furuta, Y. & Ohishi, T., 2009 10 26, : : Journal of Photopolymer Science and Technology. 22, 2, p. 239-243 5 p.

研究成果: Article

6 引用 (Scopus)

Micro-patterning of Siloxane Films by Proton Beam Writing

Nishikawa, H., Tsuchiya, R., Yasukawa, T., Kaneko, T., Furuta, Y. & Ohishi, T., 2009 6 1, : : Journal of Photopolymer Science and Technology, Vol.22, pp.239-243(2009). 22, p. 239-243

研究成果: Article

2008

Changes in Effective Work Function of HfxRu1-xAlloy Gate Electrode

T.Nabatame, T. N., Y.Nunoshige, Y. N., M.Kadoshima, M. K., H.Takaba, H. T., K.Segawa, K. S., S.Kimura, S. K., H.Satake, H. S., H.Ota, H. O., T.Ohishi, T. O., A.Toriumi, A. T. & Oishi, T., 2008 3 28, : : Microelectronics Engineering.

研究成果: Article

Changes in effective work function of HfxRu1-x alloy gate electrode

Nabatame, T., Nunoshige, Y., Kadoshima, M., Takaba, H., Segawa, K., Kimura, S., Satake, H., Ota, H., Ohishi, T. & Toriumi, A., 2008 7 1, : : Microelectronic Engineering. 85, 7, p. 1524-1528 5 p.

研究成果: Article

12 引用 (Scopus)

Effect of ultrasound sonication on electroplating of iridium

Ohsaka, T., Isaka, M., Hirano, K. & Ohishi, T., 2008 4, : : Ultrasonics Sonochemistry. 15, 4, p. 283-288 6 p.

研究成果: Article

31 引用 (Scopus)

Oxygene Vacancy-induced dipole formation at high-k/SiO2 interface by the catalytic effect of Pt-gate

K.Iwamoto, K. I., Y.Nunoshige, Y. N., Y.Kamimuta, Y. K., A.Hirano, A. H., H.Ohta, H. O., T.Nabatame, T. N., T.Ohishi, T. O., A.Toriumi, A. T. & Oishi, T., 2008 3 23, : : 2008 Materials Research Society Spring Meeting (San Francisco,USA).

研究成果: Article

Oxygen vacancy-induced dipole formation at high-k/SiO2 interface by the catalytic effect of Pt-gate

K.Iwamoto, K. I., Y.Nunoshige, Y. N., Y.Kamimuta, Y. K., A.Hirano, A. H., H.Ota, H. O., T.Nabatame, T. N., T.Ohishi, T. O., A.Toriumi, A. T. & Oishi, T., 2008 3 24, : : 2008 Materials Research Society Spring Meeting (San Francisco,USA).

研究成果: Article

2007

Effect of alcohol addition on electroplating of iridium

Ohsaka, T., Matsubara, Y., Hirano, K. & Ohishi, T., 2007 9 1, : : Transactions of the Institute of Metal Finishing. 85, 5, p. 260-264 5 p.

研究成果: Article

7 引用 (Scopus)

Effect of alcol addition on electroplating of Irudium

T.Ohsaka, T. O., Y.Matsubara, Y. M., K.Hirano, K. H., T.Ohishi, T. O. & Oishi, T., 2007 9 28, : : 58th Annual Meeting of the International Society of Electrochemistry (Canada).

研究成果: Article

Electroplating of iridium - Cobalt alloy

Ohsaka, T., Matsubara, Y., Hirano, K. & Ohishi, T., 2007 9 1, : : Transactions of the Institute of Metal Finishing. 85, 5, p. 265-269 5 p.

研究成果: Article

7 引用 (Scopus)

Electroplating of Iridium-Cobalt Alloy

Ohsaka, T., Matsubara, Y., Hirano, K., Ohshi, T. & Oishi, T., 2007 11 1, : : Transactions of the Institute of Metal Finishing. 85, p. 265

研究成果: Article

7 引用 (Scopus)

What is the essence of vFB shifts in high-k gate stack?

Nabatame, T., Iwamoto, K., Akiyama, K., Nunoshige, Y., Ota, H., Ohishi, T. & Toriumi, A., 2007 12 1, ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. 4 版 p. 543-555 13 p. (ECS Transactions; 巻数 11, 番号 4).

研究成果: Conference contribution

11 引用 (Scopus)

What is the essence of Vfb shifts in high-k gate stack?

T.Nabatame, T. N., K.Iwamoto, K. I., K.Akiyama, K. A., Y.Nunoshige, Y. N., H.Nunoshige, H. N., H.Ota, H. O., A.Toriumi, A. T., T.Ohishi, T. O. & Oishi, T., 2007 10 7, : : Electrochemical Society (ECS) Transactions. 11, p. 543

研究成果: Article

11 引用 (Scopus)
2006

Effect of residual OH impurities in ALD high-k films on interfacial SiO2 growth

S.Kimura, S. K., K.Iwamoto, K. I., M.Kadoshima, M. K., Y.Nunoshige, Y. N., A.Ogawa, A. O., T.Nabatame, T. N., H.Ohta, H. O., A.Toriumi, A. T., T.Ohishi, T. O. & Oishi, T., 2006 11 8, : : 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices-Science and Technology.

研究成果: Article

The effect of oxygene in Ru gate electrode on effctive work function of Ru/HfO2 stack structure

T.Nabatame, T. N., K.Segawa, K. S., M.Kadoshima, M. K., H.Takaba, H. T., K.Iwamoto, K. I., S.Kimura, S. K., Y.Nunoshige, Y. N., H.Satake, H. S., T.Ohishi, T. O., A.Toriumi, A. T. & Oishi, T., 2006 12 17, : : Materials Science in Semiconductor Orocessing. 9, p. 975-979

研究成果: Article

12 引用 (Scopus)

The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure

Nabatame, T., Segawa, K., Kadoshima, M., Takaba, H., Iwamoto, K., Kimura, S., Nunoshige, Y., Satake, H., Ohishi, T. & Toriumi, A., 2006 12 1, : : Materials Science in Semiconductor Processing. 9, 6, p. 975-979 5 p.

研究成果: Article

12 引用 (Scopus)

The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure

T.Nabatame, T. N., K.Segawa, K. S., M.Kadoshima, M. K., H.Tanabe, H. T., K.Iwamoto, K. I., S.Kimura, S. K., Y.Nunoshige, Y. N., H.Satake, H. S., A.Toriumi, A. T., Ohishi, T. & Oishi, T., 2006 6 10, : : 2006 European Materials Research Society Spring Meeting (Nice,France).

研究成果: Article

12 引用 (Scopus)

Thermal stability of ALD-grown Ru/HfON/Si capacitors

H.Tabata, H. T., K.Segawa, K. S., M.Kadoshima, M. K., Y.Nunoshige, Y. N., A.Ogawa, A. O., T.Nabatame, T. N., H.Satake, H. S., T.Ohishi, T. O., A.Toroumi, A. T. & Oishi, T., 2006 7 25, : : 6th International Coference on Atomic Layer Deposition (Seoul, Korea).

研究成果: Article

2005

Chemical Processing of Ceramics

T.Ohishi, T. O. & Oishi, T., 2005 5 1, : : CRC PRESS.

研究成果: Article

24 引用 (Scopus)

Chemical Processing of Ceramics,Second Edition

Lee, B. I., J.K.Pope, J. K. P. & Oishi, T., 2005 3 25, : : Chemical Processing of Ceramics.

研究成果: Article

1 引用 (Scopus)
2003
21 引用 (Scopus)