• 427 引用
  • 12 h指数
1984 …2019

年単位の研究成果

Pureに変更を加えた場合、すぐここに表示されます。

研究成果

Article
21 引用 (Scopus)

Ceramic Film Using Photo-irradiation Technique

T.Ohishi, T. O. & Oishi, T., 1991 9 1, : : High Tech Ceramic News. 3, p. 3

研究成果: Article

Changes in Effective Work Function of HfxRu1-xAlloy Gate Electrode

T.Nabatame, T. N., Y.Nunoshige, Y. N., M.Kadoshima, M. K., H.Takaba, H. T., K.Segawa, K. S., S.Kimura, S. K., H.Satake, H. S., H.Ota, H. O., T.Ohishi, T. O., A.Toriumi, A. T. & Oishi, T., 2008 3 28, : : Microelectronics Engineering.

研究成果: Article

Changes in effective work function of HfxRu1-x alloy gate electrode

Nabatame, T., Nunoshige, Y., Kadoshima, M., Takaba, H., Segawa, K., Kimura, S., Satake, H., Ota, H., Ohishi, T. & Toriumi, A., 2008 7 1, : : Microelectronic Engineering. 85, 7, p. 1524-1528 5 p.

研究成果: Article

12 引用 (Scopus)

Characteristics of Al 2 O 3 /native oxide/n-GaN capacitors by post-metallization annealing

Yuge, K., Nabatame, T., Irokawa, Y., Ohi, A., Ikeda, N., Sang, L., Koide, Y. & Ohishi, T., 2019 1 31, : : Semiconductor Science and Technology. 34, 3, 034001.

研究成果: Article

6 引用 (Scopus)

Chemical Processing of Ceramics

T.Ohishi, T. O. & Oishi, T., 2005 5 1, : : CRC PRESS.

研究成果: Article

24 引用 (Scopus)

Chemical Processing of Ceramics,Second Edition

Lee, B. I., J.K.Pope, J. K. P. & Oishi, T., 2005 3 25, : : Chemical Processing of Ceramics.

研究成果: Article

公開
2 引用 (Scopus)

Effect of alcohol addition on electroplating of iridium

Ohsaka, T., Matsubara, Y., Hirano, K. & Ohishi, T., 2007 9 1, : : Transactions of the Institute of Metal Finishing. 85, 5, p. 260-264 5 p.

研究成果: Article

7 引用 (Scopus)

Effect of alcol addition on electroplating of Irudium

T.Ohsaka, T. O., Y.Matsubara, Y. M., K.Hirano, K. H., T.Ohishi, T. O. & Oishi, T., 2007 9 28, : : 58th Annual Meeting of the International Society of Electrochemistry (Canada).

研究成果: Article

Effect of residual OH impurities in ALD high-k films on interfacial SiO2 growth

S.Kimura, S. K., K.Iwamoto, K. I., M.Kadoshima, M. K., Y.Nunoshige, Y. N., A.Ogawa, A. O., T.Nabatame, T. N., H.Ohta, H. O., A.Toriumi, A. T., T.Ohishi, T. O. & Oishi, T., 2006 11 8, : : 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices-Science and Technology.

研究成果: Article

Effect of ultrasound sonication on electroplating of iridium

Ohsaka, T., Isaka, M., Hirano, K. & Ohishi, T., 2008 4, : : Ultrasonics Sonochemistry. 15, 4, p. 283-288 6 p.

研究成果: Article

31 引用 (Scopus)
16 引用 (Scopus)

Electroplating of iridium - Cobalt alloy

Ohsaka, T., Matsubara, Y., Hirano, K. & Ohishi, T., 2007 9 1, : : Transactions of the Institute of Metal Finishing. 85, 5, p. 265-269 5 p.

研究成果: Article

7 引用 (Scopus)

Electroplating of Iridium-Cobalt Alloy

Ohsaka, T., Matsubara, Y., Hirano, K., Ohshi, T. & Oishi, T., 2007 11 1, : : Transactions of the Institute of Metal Finishing. 85, p. 265

研究成果: Article

7 引用 (Scopus)
9 引用 (Scopus)

Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors

Nabatame, T., Maeda, E., Inoue, M., Yuge, K., Hirose, M., Shiozaki, K., Ikeda, N., Ohishi, T. & Ohi, A., 2019 1 1, : : Applied Physics Express. 12, 1, 011009.

研究成果: Article

9 引用 (Scopus)

Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors

Sawada, T., Nabatame, T., Dao, T. D., Yamamoto, I., Kurishima, K., Onaya, T., Ohi, A., Ito, K., Takahashi, M., Kohama, K., Ohishi, T., Ogura, A. & Nagao, T., 2017 11 1, : : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 35, 6, 061503.

研究成果: Article

3 引用 (Scopus)

Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide

Taweesup, K., Yamamoto, I., Chikyow, T., Lothongkum, G., Tsukagoshi, K., Ohishi, T., Tungasmita, S., Visuttipitukul, P., Ito, K., Takahashi, M. & Nabatame, T., 2016 1 1, : : Thin Solid Films. 598, p. 126-130 5 p.

研究成果: Article

1 引用 (Scopus)

Influence of oxygene transfer in Hf-based high-k dielectrics on flatband voltage shift

T.Nabatame, T. N., M.Kimura, M. K., A.Ohi, H. Y., T.Ohishi, T. O., T.Chikyow, T. C. & Oishi, T., 2011 5 25, : : 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI).

研究成果: Article

Influence of oxygen transfer in Hf-based high-k dielectrics on flatband voltage shift

Nabatame, T., Kimura, M., Yamada, H., Ohi, A., Ohishi, T. & Chikyow, T., 2012 2 1, : : Thin Solid Films. 520, 8, p. 3387-3391 5 p.

研究成果: Article

9 引用 (Scopus)

Mechanism of Vfb shift in HfO2 gate stack by Al diffusion from (TaC)1-xAlx gate electrode

T.Nabatame, T. N., M.Kimura, M. K., H.Yamada, H. Y., A.Ohi, A. O., T.Ohishi, T. O., T.Chikyow, T. C. & Oishi, T., 2012 5 6, : : 221st Electro Chemical Society Meeting, Seattle (USA).

研究成果: Article

Micro-pattering of siloxane films by proton beam writing

Nishikawa, H., Tsuchiya, R., Yasukawa, T., Kaneko, T., Furuta, Y. & Ohishi, T., 2009 10 26, : : Journal of Photopolymer Science and Technology. 22, 2, p. 239-243 5 p.

研究成果: Article

6 引用 (Scopus)

Micro-patterning of Siloxane Films by Proton Beam Writing

Nishikawa, H., Tsuchiya, R., Yasukawa, T., Kaneko, T., Furuta, Y. & Ohishi, T., 2009 6 1, : : Journal of Photopolymer Science and Technology, Vol.22, pp.239-243(2009). 22, p. 239-243

研究成果: Article

Oxygene Vacancy-induced dipole formation at high-k/SiO2 interface by the catalytic effect of Pt-gate

K.Iwamoto, K. I., Y.Nunoshige, Y. N., Y.Kamimuta, Y. K., A.Hirano, A. H., H.Ohta, H. O., T.Nabatame, T. N., T.Ohishi, T. O., A.Toriumi, A. T. & Oishi, T., 2008 3 23, : : 2008 Materials Research Society Spring Meeting (San Francisco,USA).

研究成果: Article

Oxygen vacancy-induced dipole formation at high-k/SiO2 interface by the catalytic effect of Pt-gate

K.Iwamoto, K. I., Y.Nunoshige, Y. N., Y.Kamimuta, Y. K., A.Hirano, A. H., H.Ota, H. O., T.Nabatame, T. N., T.Ohishi, T. O., A.Toriumi, A. T. & Oishi, T., 2008 3 24, : : 2008 Materials Research Society Spring Meeting (San Francisco,USA).

研究成果: Article

Photoluminescence behavior of SiO2 prepared by sol-gel processing

Okuzaki, S., Okude, K. & Ohishi, T., 2000 3 2, : : Journal of Non-Crystalline Solids. 265, 1, p. 61-67 7 p.

研究成果: Article

27 引用 (Scopus)
10 引用 (Scopus)
18 引用 (Scopus)
7 引用 (Scopus)
4 引用 (Scopus)

Role of Al atoms in (TaC)1-xAlx gate electrode on Vfb for HfO2 gate stack

M.Kimura, M. K., T.Nabatame, T. N., H.Yamada, H. Y., A.Ohi, A. O., T.Chikyow, T. C., T.Ohishi, T. O. & Oishi, T., 2011 11 4, : : NIMS(物質材料研究機構)連携大学院ワークショップ、早稲田大.

研究成果: Article