0.1 μm Au/WSiN gate GaAs MESFET with new BP-LDD structure and its applications

Masami Tokumitsu, Kazumi Nishimura, Makoto Hirano, Kimiyoshi Yamasaki

    研究成果: Article

    4 引用 (Scopus)

    抜粋

    A 0.1-μm gate-length GaAs MESFET technology is reported. A 48.3-GHz dynamic-frequency divider, and an amplifier with 20-dB gain and 17.5-GHz bandwidth are successfully fabricated by integrating over-100-GHz-cut-off frequency MESFETs using a new lightly-doped drain structure with a buried p-layer (BP-LDD) device structure.

    元の言語English
    ページ(範囲)1189-1194
    ページ数6
    ジャーナルIEICE Transactions on Electronics
    E78-C
    発行部数9
    出版物ステータスPublished - 1995 9 1

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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  • これを引用

    Tokumitsu, M., Nishimura, K., Hirano, M., & Yamasaki, K. (1995). 0.1 μm Au/WSiN gate GaAs MESFET with new BP-LDD structure and its applications. IEICE Transactions on Electronics, E78-C(9), 1189-1194.