0.1 μm GaAs MESFET technology for ultra-high-speed digital and analog ICs

Masami Tokumitsu, Makoto Hirano, Koichi Murata, Yuhki Imai, Kimiyoshi Yamasaki

    研究成果: Conference contribution

    9 引用 (Scopus)

    抜粋

    A 0.1 μm gate-length GaAs IC technology is reported. A 48.3 GHz dynamic-frequency divider, and an amplifier with 20 dB gain and 17.5 GHz bandwidth are successfully fabricated by integrating over 100 GHz cut-off frequency MESFETs by using a new BP-LDD device structure.

    元の言語English
    ホスト出版物のタイトルIEEE MTT-S International Microwave Symposium Digest
    出版者Publ by IEEE
    ページ1629-1632
    ページ数4
    ISBN(印刷物)0780317793
    出版物ステータスPublished - 1994 1 1
    イベントProceedings of the IEEE MTT-S International Microwave Symposium - San Diego, CA, USA
    継続期間: 1994 5 231994 5 27

    出版物シリーズ

    名前IEEE MTT-S International Microwave Symposium Digest
    3
    ISSN(印刷物)0149-645X

    Other

    OtherProceedings of the IEEE MTT-S International Microwave Symposium
    San Diego, CA, USA
    期間94/5/2394/5/27

    ASJC Scopus subject areas

    • Radiation
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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  • これを引用

    Tokumitsu, M., Hirano, M., Murata, K., Imai, Y., & Yamasaki, K. (1994). 0.1 μm GaAs MESFET technology for ultra-high-speed digital and analog ICs. : IEEE MTT-S International Microwave Symposium Digest (pp. 1629-1632). (IEEE MTT-S International Microwave Symposium Digest; 巻数 3). Publ by IEEE.