0.1-μm p⁺-GaAs gate HJFETs with f_T= 121 GHz fabricated using all dry-etching and selective MOMBE growth

Engineering & Materials Science

• Dry etching 100%
• Heterojunctions 59%
• Field effect transistors 48%
• Aspect ratio 21%
• Microwaves 20%
• Capacitance 19%
• Electrodes 17%
• Fabrication 16%
• Electric potential 11%

Chemical Compounds

• Fluorescence Maxima 90%
• Microwave 55%
• Voltage 49%
• Resistance 43%
• Reduction 31%

Physics & Astronomy

• etching 51%
• heterojunctions 24%
• field effect transistors 21%
• high aspect ratio 14%
• performance 12%
• capacitance 10%
• microwaves 9%
• electrodes 8%
• fabrication 8%
• electric potential 7%