0.21-fJ GaAs DCFL circuits using 0.2-/zm Y-shaped gate AlGaAs/InGaAs E/D-HJFETs

Shigeki Wada, Masatoshi Tokushima, Masaoki Ishikawa, Nobuhide Yoshida, Masahiro Fujii, Tadashi Maeda

研究成果: Article › 査読