0.7μm pitch double level Al interconnection technology for DRAMs using SiO2 mask Al etching and PECVD SiOF

T.Yokoyama T.Yokoyama; Y.Yamada Y.Yamada; K.Kishimoto K.Kishimoto; T.Usami T.Usami; H H; Kasamoto Kasamoto; K.Ueno K.Ueno; H.Gomi H.Gomi; Kazuyoshi Ueno

0.7μm pitch double level Al interconnection technology for DRAMs using SiO2 mask Al etching and PECVD SiOF

T.Yokoyama T.Yokoyama, Y.Yamada Y.Yamada, K.Kishimoto K.Kishimoto, T.Usami T.Usami, H H, Kasamoto Kasamoto, K.Ueno K.Ueno, H.Gomi H.Gomi, Kazuyoshi Ueno

機能制御システム専攻

研究成果: Article › 査読

29 被引用数 (Scopus)

本文言語	English
ページ（範囲）	1440-1444
ジャーナル	Japanese Journal of Applied Physics
巻	37
出版ステータス	Published - 1998 3月 1

引用スタイル

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title = "0.7μm pitch double level Al interconnection technology for DRAMs using SiO2 mask Al etching and PECVD SiOF",

author = "T.Yokoyama T.Yokoyama and Y.Yamada Y.Yamada and K.Kishimoto K.Kishimoto and T.Usami T.Usami and H H and Kasamoto Kasamoto and K.Ueno K.Ueno and H.Gomi H.Gomi and Kazuyoshi Ueno",

year = "1998",

month = mar,

day = "1",

language = "English",

volume = "37",

pages = "1440--1444",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - 0.7μm pitch double level Al interconnection technology for DRAMs using SiO2 mask Al etching and PECVD SiOF

AU - T.Yokoyama, T.Yokoyama

AU - Y.Yamada, Y.Yamada

AU - K.Kishimoto, K.Kishimoto

AU - T.Usami, T.Usami

AU - H, H

AU - Kasamoto, Kasamoto

AU - K.Ueno, K.Ueno

AU - H.Gomi, H.Gomi

AU - Ueno, Kazuyoshi

PY - 1998/3/1

Y1 - 1998/3/1

M3 - Article

SN - 0021-4922

VL - 37

SP - 1440

EP - 1444

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

ER -