A high-speed potential of an n** plus -Ge gate AlGaAs/GaAs MISFET has been confirmed by a ring oscillator and a frequency divider performances. The circuit was based on SCFL with 1. 0 mu m gate-length MISFET's. The delay time was 42. 4ps with a power dissipation of 8. 9mw/gate. A maximum toggle frequency of 11. 3GHz with a power dissipation of 219mw per T-F/F has been achieved at room temperature.
|出版物ステータス||Published - 1987 4 1|
|イベント||Pap from the 1987 Natl Conv IEICE - Tokyo, Jpn|
継続期間: 1987 3 26 → 1987 3 29
|Other||Pap from the 1987 Natl Conv IEICE|
|期間||87/3/26 → 87/3/29|
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