抄録
A high-speed potential of an n** plus -Ge gate AlGaAs/GaAs MISFET has been confirmed by a ring oscillator and a frequency divider performances. The circuit was based on SCFL with 1. 0 mu m gate-length MISFET's. The delay time was 42. 4ps with a power dissipation of 8. 9mw/gate. A maximum toggle frequency of 11. 3GHz with a power dissipation of 219mw per T-F/F has been achieved at room temperature.
本文言語 | English |
---|---|
ページ | 221-223 |
ページ数 | 3 |
出版ステータス | Published - 1987 4月 1 |
イベント | Pap from the 1987 Natl Conv IEICE - Tokyo, Jpn 継続期間: 1987 3月 26 → 1987 3月 29 |
Other
Other | Pap from the 1987 Natl Conv IEICE |
---|---|
City | Tokyo, Jpn |
Period | 87/3/26 → 87/3/29 |
ASJC Scopus subject areas
- 工学(全般)