11. 3 GHz FREQUENCY DIVIDER EMPLOYING AlGaAs/GaAs MISFET'S.

Shuichi Fujita; Makoto Hirano; Koichi Maezawa; Takashi Mizutani

11. 3 GHz FREQUENCY DIVIDER EMPLOYING AlGaAs/GaAs MISFET'S.

Shuichi Fujita, Makoto Hirano, Koichi Maezawa, Takashi Mizutani

研究成果 › 査読

抄録

A high-speed potential of an n** plus -Ge gate AlGaAs/GaAs MISFET has been confirmed by a ring oscillator and a frequency divider performances. The circuit was based on SCFL with 1. 0 mu m gate-length MISFET's. The delay time was 42. 4ps with a power dissipation of 8. 9mw/gate. A maximum toggle frequency of 11. 3GHz with a power dissipation of 219mw per T-F/F has been achieved at room temperature.

本文言語	English
ページ	221-223
ページ数	3
出版ステータス	Published - 1987 4 1
イベント	Pap from the 1987 Natl Conv IEICE - Tokyo, Jpn 継続期間: 1987 3 26 → 1987 3 29

Other

Other	Pap from the 1987 Natl Conv IEICE
City	Tokyo, Jpn
Period	87/3/26 → 87/3/29

ASJC Scopus subject areas

工学（全般）

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引用スタイル

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abstract = "A high-speed potential of an n** plus -Ge gate AlGaAs/GaAs MISFET has been confirmed by a ring oscillator and a frequency divider performances. The circuit was based on SCFL with 1. 0 mu m gate-length MISFET's. The delay time was 42. 4ps with a power dissipation of 8. 9mw/gate. A maximum toggle frequency of 11. 3GHz with a power dissipation of 219mw per T-F/F has been achieved at room temperature.",

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AU - Fujita, Shuichi

AU - Hirano, Makoto

AU - Maezawa, Koichi

AU - Mizutani, Takashi

PY - 1987/4/1

Y1 - 1987/4/1

N2 - A high-speed potential of an n** plus -Ge gate AlGaAs/GaAs MISFET has been confirmed by a ring oscillator and a frequency divider performances. The circuit was based on SCFL with 1. 0 mu m gate-length MISFET's. The delay time was 42. 4ps with a power dissipation of 8. 9mw/gate. A maximum toggle frequency of 11. 3GHz with a power dissipation of 219mw per T-F/F has been achieved at room temperature.

AB - A high-speed potential of an n** plus -Ge gate AlGaAs/GaAs MISFET has been confirmed by a ring oscillator and a frequency divider performances. The circuit was based on SCFL with 1. 0 mu m gate-length MISFET's. The delay time was 42. 4ps with a power dissipation of 8. 9mw/gate. A maximum toggle frequency of 11. 3GHz with a power dissipation of 219mw per T-F/F has been achieved at room temperature.

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T2 - Pap from the 1987 Natl Conv IEICE

Y2 - 26 March 1987 through 29 March 1987

ER -

11. 3 GHz FREQUENCY DIVIDER EMPLOYING AlGaAs/GaAs MISFET'S.

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Other

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