1/4 miniaturized passive elements for GaAs MMICs

Makoto Hirano, Yuhki Imai, Kazuyoshi Asai

    研究成果: Conference contribution

    4 引用 (Scopus)

    抜粋

    Novel miniature structures for passive elements--inductors and capacitors--are proposed to reduce the area they consume in GaAs MMICs. The miniaturized inductors are fabricated out of thick metal micro-wire, 10 μm thick, 6 μm wide, and with 2 μm spacing. The miniaturized capacitors are constructed as a corrugated structure with an insulator layer sandwiched between electrodes on a S.I. GaAs substrate with 3-μm-deep taper holes, in a checkerboard pattern. Both elements are fabricated employing very simple technology as a result of their monolayer structures. Adopting the proposed structures, the elements have been shrunk to 1/4 the size of conventional elements.

    元の言語English
    ホスト出版物のタイトルTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
    出版者Publ by IEEE
    ページ37-40
    ページ数4
    ISBN(印刷物)078030196X
    出版物ステータスPublished - 1992 1 1
    イベント13th Annual GaAs IC Symposium Technical Digest - Monterey, CA, USA
    継続期間: 1991 10 201991 10 23

    出版物シリーズ

    名前Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

    Other

    Other13th Annual GaAs IC Symposium Technical Digest
    Monterey, CA, USA
    期間91/10/2091/10/23

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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  • これを引用

    Hirano, M., Imai, Y., & Asai, K. (1992). 1/4 miniaturized passive elements for GaAs MMICs. : Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 37-40). (Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)). Publ by IEEE.