2-D simulation of kink-related sidegating effects in GaAs MESFETs

Kasuoki Usami, Kazushige Horio

研究成果: Article

1 引用 (Scopus)

抄録

Sidegating (backgating) effects in a planar structure with sidegate on the same side as MESFET are studied by two-dimensional simulation and the results are compared with those for a structure with a backgate on the back side of the substrate. The kink-related sidegating is reproduced in the planar structure, too. Its mechanism is discussed and is attributed to the change of EL2's role from an electron trap to a recombination center by capturing holes, which are generated by impact ionization and flow into the semi-insulating substrate including EL2 (deep donor). The dependence of shallow acceptor density in the semi-insulating substrate is also studied. It is shown that the kink-related sidegating is less remarkable in the case with lower acceptor density in the substrate. Potential dependence of sidegating effects on the sidegate (backgate) position is also discussed.

元の言語English
ページ(範囲)1737-1745
ページ数9
ジャーナルSolid-State Electronics
39
発行部数12
DOI
出版物ステータスPublished - 1996 12

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field effect transistors
planar structures
Substrates
simulation
Electron traps
Impact ionization
traps
ionization
gallium arsenide
electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

これを引用

2-D simulation of kink-related sidegating effects in GaAs MESFETs. / Usami, Kasuoki; Horio, Kazushige.

:: Solid-State Electronics, 巻 39, 番号 12, 12.1996, p. 1737-1745.

研究成果: Article

@article{a98f9b6da6f8429593ecdfc21c92d39d,
title = "2-D simulation of kink-related sidegating effects in GaAs MESFETs",
abstract = "Sidegating (backgating) effects in a planar structure with sidegate on the same side as MESFET are studied by two-dimensional simulation and the results are compared with those for a structure with a backgate on the back side of the substrate. The kink-related sidegating is reproduced in the planar structure, too. Its mechanism is discussed and is attributed to the change of EL2's role from an electron trap to a recombination center by capturing holes, which are generated by impact ionization and flow into the semi-insulating substrate including EL2 (deep donor). The dependence of shallow acceptor density in the semi-insulating substrate is also studied. It is shown that the kink-related sidegating is less remarkable in the case with lower acceptor density in the substrate. Potential dependence of sidegating effects on the sidegate (backgate) position is also discussed.",
author = "Kasuoki Usami and Kazushige Horio",
year = "1996",
month = "12",
doi = "10.1016/S0038-1101(96)00116-5",
language = "English",
volume = "39",
pages = "1737--1745",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "12",

}

TY - JOUR

T1 - 2-D simulation of kink-related sidegating effects in GaAs MESFETs

AU - Usami, Kasuoki

AU - Horio, Kazushige

PY - 1996/12

Y1 - 1996/12

N2 - Sidegating (backgating) effects in a planar structure with sidegate on the same side as MESFET are studied by two-dimensional simulation and the results are compared with those for a structure with a backgate on the back side of the substrate. The kink-related sidegating is reproduced in the planar structure, too. Its mechanism is discussed and is attributed to the change of EL2's role from an electron trap to a recombination center by capturing holes, which are generated by impact ionization and flow into the semi-insulating substrate including EL2 (deep donor). The dependence of shallow acceptor density in the semi-insulating substrate is also studied. It is shown that the kink-related sidegating is less remarkable in the case with lower acceptor density in the substrate. Potential dependence of sidegating effects on the sidegate (backgate) position is also discussed.

AB - Sidegating (backgating) effects in a planar structure with sidegate on the same side as MESFET are studied by two-dimensional simulation and the results are compared with those for a structure with a backgate on the back side of the substrate. The kink-related sidegating is reproduced in the planar structure, too. Its mechanism is discussed and is attributed to the change of EL2's role from an electron trap to a recombination center by capturing holes, which are generated by impact ionization and flow into the semi-insulating substrate including EL2 (deep donor). The dependence of shallow acceptor density in the semi-insulating substrate is also studied. It is shown that the kink-related sidegating is less remarkable in the case with lower acceptor density in the substrate. Potential dependence of sidegating effects on the sidegate (backgate) position is also discussed.

UR - http://www.scopus.com/inward/record.url?scp=0030394225&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030394225&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(96)00116-5

DO - 10.1016/S0038-1101(96)00116-5

M3 - Article

AN - SCOPUS:0030394225

VL - 39

SP - 1737

EP - 1745

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 12

ER -