抄録
Sidegating (backgating) effects in a planar structure with sidegate on the same side as MESFET are studied by two-dimensional simulation and the results are compared with those for a structure with a backgate on the back side of the substrate. The kink-related sidegating is reproduced in the planar structure, too. Its mechanism is discussed and is attributed to the change of EL2's role from an electron trap to a recombination center by capturing holes, which are generated by impact ionization and flow into the semi-insulating substrate including EL2 (deep donor). The dependence of shallow acceptor density in the semi-insulating substrate is also studied. It is shown that the kink-related sidegating is less remarkable in the case with lower acceptor density in the substrate. Potential dependence of sidegating effects on the sidegate (backgate) position is also discussed.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 1737-1745 |
| ページ数 | 9 |
| ジャーナル | Solid-State Electronics |
| 巻 | 39 |
| 発行部数 | 12 |
| DOI | |
| 出版物ステータス | Published - 1996 12 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
これを引用
2-D simulation of kink-related sidegating effects in GaAs MESFETs. / Usami, Kasuoki; Horio, Kazushige.
：: Solid-State Electronics, 巻 39, 番号 12, 12.1996, p. 1737-1745.研究成果: Article
}
TY - JOUR
T1 - 2-D simulation of kink-related sidegating effects in GaAs MESFETs
AU - Usami, Kasuoki
AU - Horio, Kazushige
PY - 1996/12
Y1 - 1996/12
N2 - Sidegating (backgating) effects in a planar structure with sidegate on the same side as MESFET are studied by two-dimensional simulation and the results are compared with those for a structure with a backgate on the back side of the substrate. The kink-related sidegating is reproduced in the planar structure, too. Its mechanism is discussed and is attributed to the change of EL2's role from an electron trap to a recombination center by capturing holes, which are generated by impact ionization and flow into the semi-insulating substrate including EL2 (deep donor). The dependence of shallow acceptor density in the semi-insulating substrate is also studied. It is shown that the kink-related sidegating is less remarkable in the case with lower acceptor density in the substrate. Potential dependence of sidegating effects on the sidegate (backgate) position is also discussed.
AB - Sidegating (backgating) effects in a planar structure with sidegate on the same side as MESFET are studied by two-dimensional simulation and the results are compared with those for a structure with a backgate on the back side of the substrate. The kink-related sidegating is reproduced in the planar structure, too. Its mechanism is discussed and is attributed to the change of EL2's role from an electron trap to a recombination center by capturing holes, which are generated by impact ionization and flow into the semi-insulating substrate including EL2 (deep donor). The dependence of shallow acceptor density in the semi-insulating substrate is also studied. It is shown that the kink-related sidegating is less remarkable in the case with lower acceptor density in the substrate. Potential dependence of sidegating effects on the sidegate (backgate) position is also discussed.
UR - http://www.scopus.com/inward/record.url?scp=0030394225&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030394225&partnerID=8YFLogxK
U2 - 10.1016/S0038-1101(96)00116-5
DO - 10.1016/S0038-1101(96)00116-5
M3 - Article
AN - SCOPUS:0030394225
VL - 39
SP - 1737
EP - 1745
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 12
ER -