抄録
Sidegating (backgating) effects in a planar structure with sidegate on the same side as MESFET are studied by two-dimensional simulation and the results are compared with those for a structure with a backgate on the back side of the substrate. The kink-related sidegating is reproduced in the planar structure, too. Its mechanism is discussed and is attributed to the change of EL2's role from an electron trap to a recombination center by capturing holes, which are generated by impact ionization and flow into the semi-insulating substrate including EL2 (deep donor). The dependence of shallow acceptor density in the semi-insulating substrate is also studied. It is shown that the kink-related sidegating is less remarkable in the case with lower acceptor density in the substrate. Potential dependence of sidegating effects on the sidegate (backgate) position is also discussed.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1737-1745 |
| ページ数 | 9 |
| ジャーナル | Solid-State Electronics |
| 巻 | 39 |
| 号 | 12 |
| DOI | |
| 出版ステータス | Published - 1996 12 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry