27 GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1-μm double-deck-shaped (DDS) gate E/D-HJFETs

Shigeki Wada; Tadashi Maeda; Masatoshi Tokushima; Jin Yamazaki; Masaoki Ishikawa; Masahiro Fujii

27 GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1-μm double-deck-shaped (DDS) gate E/D-HJFETs

Shigeki Wada, Tadashi Maeda, Masatoshi Tokushima, Jin Yamazaki, Masaoki Ishikawa, Masahiro Fujii

研究成果: Paper › 査読

抄録

We have developed 0.1-μm double-deck-shaped (DDS) gate enhancement-mode (E) and depletion-mode (D) heterojunction (HJ) FET technology based upon an all-dry-etching process, which enables high current-gain cut-off frequencies (f_T) in both E- and D-mode FETs above 100 GHz. We also report the first 256/258 dual-modulus prescaler IC operating above 20 GHz with low power consumption. Obtained maximum input frequency for the prescaler was 27 GHz with power consumption of 151 mW at a supply voltage of 1.2 V. This power consumption is about 1/50 of the value extrapolated from ones reported for prescalers.

本文言語	English
ページ	125-128
ページ数	4
出版ステータス	Published - 1998 12月 1
外部発表	はい
イベント	Proceedings of the 1998 20th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Atlanta, GA, USA 継続期間: 1998 11月 1 → 1998 11月 4

Other

Other	Proceedings of the 1998 20th Annual IEEE Gallium Arsenide Integrated Circuit Symposium
City	Atlanta, GA, USA
Period	98/11/1 → 98/11/4

ASJC Scopus subject areas

電子工学および電気工学

他のファイルとリンク

引用スタイル

@conference{3ee803bc66b14d6ab81aca9e6725cda5,

title = "27 GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1-μm double-deck-shaped (DDS) gate E/D-HJFETs",

abstract = "We have developed 0.1-μm double-deck-shaped (DDS) gate enhancement-mode (E) and depletion-mode (D) heterojunction (HJ) FET technology based upon an all-dry-etching process, which enables high current-gain cut-off frequencies (fT) in both E- and D-mode FETs above 100 GHz. We also report the first 256/258 dual-modulus prescaler IC operating above 20 GHz with low power consumption. Obtained maximum input frequency for the prescaler was 27 GHz with power consumption of 151 mW at a supply voltage of 1.2 V. This power consumption is about 1/50 of the value extrapolated from ones reported for prescalers.",

author = "Shigeki Wada and Tadashi Maeda and Masatoshi Tokushima and Jin Yamazaki and Masaoki Ishikawa and Masahiro Fujii",

year = "1998",

month = dec,

day = "1",

language = "English",

pages = "125--128",

note = "Proceedings of the 1998 20th Annual IEEE Gallium Arsenide Integrated Circuit Symposium ; Conference date: 01-11-1998 Through 04-11-1998",

}

TY - CONF

T1 - 27 GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1-μm double-deck-shaped (DDS) gate E/D-HJFETs

AU - Wada, Shigeki

AU - Maeda, Tadashi

AU - Tokushima, Masatoshi

AU - Yamazaki, Jin

AU - Ishikawa, Masaoki

AU - Fujii, Masahiro

PY - 1998/12/1

Y1 - 1998/12/1

N2 - We have developed 0.1-μm double-deck-shaped (DDS) gate enhancement-mode (E) and depletion-mode (D) heterojunction (HJ) FET technology based upon an all-dry-etching process, which enables high current-gain cut-off frequencies (fT) in both E- and D-mode FETs above 100 GHz. We also report the first 256/258 dual-modulus prescaler IC operating above 20 GHz with low power consumption. Obtained maximum input frequency for the prescaler was 27 GHz with power consumption of 151 mW at a supply voltage of 1.2 V. This power consumption is about 1/50 of the value extrapolated from ones reported for prescalers.

AB - We have developed 0.1-μm double-deck-shaped (DDS) gate enhancement-mode (E) and depletion-mode (D) heterojunction (HJ) FET technology based upon an all-dry-etching process, which enables high current-gain cut-off frequencies (fT) in both E- and D-mode FETs above 100 GHz. We also report the first 256/258 dual-modulus prescaler IC operating above 20 GHz with low power consumption. Obtained maximum input frequency for the prescaler was 27 GHz with power consumption of 151 mW at a supply voltage of 1.2 V. This power consumption is about 1/50 of the value extrapolated from ones reported for prescalers.

UR - http://www.scopus.com/inward/record.url?scp=0032309693&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032309693&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0032309693

SP - 125

EP - 128

T2 - Proceedings of the 1998 20th Annual IEEE Gallium Arsenide Integrated Circuit Symposium

Y2 - 1 November 1998 through 4 November 1998

ER -

27 GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1-μm double-deck-shaped (DDS) gate E/D-HJFETs

抄録

Other

ASJC Scopus subject areas

他のファイルとリンク

フィンガープリント

引用スタイル