27 GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1-μm double-deck-shaped (DDS) gate E/D-HJFETs

Shigeki Wada, Tadashi Maeda, Masatoshi Tokushima, Jin Yamazaki, Masaoki Ishikawa, Masahiro Fujii

研究成果: Paper

9 引用 (Scopus)

抜粋

We have developed 0.1-μm double-deck-shaped (DDS) gate enhancement-mode (E) and depletion-mode (D) heterojunction (HJ) FET technology based upon an all-dry-etching process, which enables high current-gain cut-off frequencies (fT) in both E- and D-mode FETs above 100 GHz. We also report the first 256/258 dual-modulus prescaler IC operating above 20 GHz with low power consumption. Obtained maximum input frequency for the prescaler was 27 GHz with power consumption of 151 mW at a supply voltage of 1.2 V. This power consumption is about 1/50 of the value extrapolated from ones reported for prescalers.

元の言語English
ページ125-128
ページ数4
出版物ステータスPublished - 1998 12 1
外部発表Yes
イベントProceedings of the 1998 20th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Atlanta, GA, USA
継続期間: 1998 11 11998 11 4

Other

OtherProceedings of the 1998 20th Annual IEEE Gallium Arsenide Integrated Circuit Symposium
Atlanta, GA, USA
期間98/11/198/11/4

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • これを引用

    Wada, S., Maeda, T., Tokushima, M., Yamazaki, J., Ishikawa, M., & Fujii, M. (1998). 27 GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1-μm double-deck-shaped (DDS) gate E/D-HJFETs. 125-128. 論文発表場所 Proceedings of the 1998 20th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, Atlanta, GA, USA, .