We have developed 0.1-μm double-deck-shaped (DDS) gate enhancement-mode (E) and depletion-mode (D) heterojunction (HJ) FET technology based upon an all-dry-etching process, which enables high current-gain cut-off frequencies (fT) in both E- and D-mode FETs above 100 GHz. We also report the first 256/258 dual-modulus prescaler IC operating above 20 GHz with low power consumption. Obtained maximum input frequency for the prescaler was 27 GHz with power consumption of 151 mW at a supply voltage of 1.2 V. This power consumption is about 1/50 of the value extrapolated from ones reported for prescalers.
|出版ステータス||Published - 1998 12 1|
|イベント||Proceedings of the 1998 20th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Atlanta, GA, USA|
継続期間: 1998 11 1 → 1998 11 4
|Other||Proceedings of the 1998 20th Annual IEEE Gallium Arsenide Integrated Circuit Symposium|
|City||Atlanta, GA, USA|
|Period||98/11/1 → 98/11/4|
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