In order to discuss stress-induced voiding (SIV) of Cu damascene interconnect structures in ultra-large-scale integrated circuits (ULSIs), 3-D elastic-plastic finite element analysis (FEA) was carried out based on stress-temperature behavior of constituent thin films measured by a wafer curvature method. Two types of Cu interconnect geometries with either p-SiN cap/p-SiON etch-stop layers on p-SiCN: H cap/p-SiC: H etch-stop layers were analyzed. The effect of the Cu line width was also investigated. It was found from the FEA results that, regardless of the geometry, the hydrostatic tensile stress of Cu in the structure with p-SiCN: H/p-SiC: H layers was generally lower than that with p-SiN/p-SiON layers. It was also expected that, for the structure with p-SiN/p-SiON layers, SIV is most likely to occur near the via center while for the structure with p-SiCN: H/p-SiC: H layers, it is most likely to occur near the via bottom. In the structure with p-SiCN: H/p-SiC: H layers, it was considered that a larger line width is susceptible to voiding in the via due to a high hydrostatic stress gradient in the via and a high magnitude of equivalent plastic strain in the line.
|ジャーナル||Nippon Kikai Gakkai Ronbunshu, A Hen/Transactions of the Japan Society of Mechanical Engineers, Part A|
|出版ステータス||Published - 2003 6月|
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